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Part : ACNL-X2-160X150-TA2-SK59L Supplier : SMC Manufacturer : Allied Electronics & Automation Stock : - Best Price : $1,026.2860 Price Each : $1,026.2860
Part : 2SK596S-A Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 23,000 Best Price : $0.09 Price Each : $0.09
Part : 2SK596S-C Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 4,843,990 Best Price : $0.09 Price Each : $0.09
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2SK59 Datasheet

Part Manufacturer Description PDF Type
2SK59 InterFET N-Channel silicon junction field-effect transistor Original
2SK59 N/A FET Data Book Scan
2SK59 N/A Shortform Datasheet & Cross References Data Scan
2SK590 N/A FET Data Book Scan
2SK591 NEC Semiconductor Selection Guide 1995 Original
2SK591 N/A FET Data Book Scan
2SK591 NEC N-channel MOS feild effect power transistor. Scan
2SK593 N/A GaAs N-Channel MES FET Scan
2SK593 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SK593 N/A FET Data Book Scan
2SK595 N/A General Purpose Transistors Scan
2SK595 N/A Scan
2SK595 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SK595 N/A FET Data Book Scan
2SK595 Sanyo Semiconductor N-Channel Junction Silicon FET, Capacitor Microphone Apps Scan
2SK595 Sanyo Semiconductor Scan
2SK596 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SK596 N/A Scan
2SK596 N/A FET Data Book Scan
2SK596 Sanyo Semiconductor Scan
Showing first 20 results.

2SK59

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: E2 9-97 Japanese Equivalent JFET Types_ SILICON JUNCTION FIELD-EFFECT TRANSISTORS Japanese 2SK17 2SK40 2SK59 2SK105 InterFET IFN17 IFN40 IFN59 IFNI 05 Process NJ16 NJ16 N J16 NJ16 Unit Limit N N N N Channel Channel Channel Channel -2 0 -5 0 -3 0 -5 0 1.0 Parameters Conditions BVg sS I g = - 1 .0 (JA V M in IG S S Vgs = ( ) , V ds = 0 nA Max 0.10 ( - 1 0 V) (- 30 V -
OCR Scan

2SK105 Datasheet

Abstract: 2SK105 Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions Unit Limit N Channel N Channel N Channel N Channel N Channel BVGSS IG = ­ 1.0 µA V Min ­ 20 ­ 50 ­ 30 ­ 50 ­ 50 IGSS VGS = ( ), VDS = Ø
InterFET
Original
2SK105 Datasheet to-226aa 2sk105 jfet TO226AA INTERFET NJ16

2SK68A

Abstract: 2SK44 D » G 270m -lOn -6 lm 16. 5» 10 -0.45 -4. 95 10 30« 2. 7» 10 IDSS 2SK59 h 2 C-MIC N D -30 GDS -30 , 2SK59 190 -15 0 VON=10Vmax. í¿=4typ 2SJ18 45 GS 2SK60 0. 1 2.5 3.5 100M PG=18dBtyp f
-
OCR Scan
2SK44 2SK45 2SK46 2SK63 2SK66 2SK163 2SK68A 2SK44 D 2SK70 2SK79 2SK43 2SK47 2SK48

2SK105 DGS

Abstract: 2SK105 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process Parameters Conditions Unit Limit 2SK17 IFN17 NJ16 N Channel 2SK40 IFN40 NJ16 N Channel 2SK59 IFN59 NJ16 N Channel 2SK105 IFN105 NJ16 N Channel BVGSS IGSS VGS(off) IDSS gfs Ciss Crss IG = ­ 1.0 µA VGS = ( ), VDS = Ø VDS = ( ), ID = 1.0 nA VDS = ( ), VGS = Ø VDS = ( ), VGS = Ø VGS = ( ), VDS = ( ) VGS = ( ), VDS = ( ) V Min nA Max V Min/Max mA Min/Max mS Typ pF Typ
InterFET
Original
2SK105 DGS V6010 2sj44 2SK152 IFN152 NJ132L 2SK363 IFN363 NJ450

2SK105

Abstract: 2SK105 F E2 Ja g a n e s ^ tju iv a le rv U F F T ^ g e ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ SILICON JUNCTION FIELD-EFFECT TRANSISTORS 9-97 Japanese InterFET Process Parameters BVg ss 2SK17 IFN17 NJ16 2SK40 IFN40 NJ16 2SK59 IFN59 NJ16 2SK105 IFN105 NJ16 Conditions Unit Limit V Min nA Max N Channel -2 0 N Channel -5 0 1.0 N Channel -3 0 1.0 ( - i o V) N Channel -5 0 Iq = Vgs - 1.0 [ik IGS S V GS (off) I DSS g fs C ¡ss C rss = 0, Vds = 0 ( - 10 V) 0.10 (- 30
-
OCR Scan
2SK105 F 2SK105 E aX 010

2SK105

Abstract: 2SK59 SGD E 2 9_g7 SILICON JUNCTION FIELD-EFFECT TRANSISTORS Japanese 2SK17 2SK40 2SK59 2SK105 InterFET IFN17 IFN40 IFN59 IFN105 Process NJ16 NJ16 NJ16 NJ16 Parameters Conditions Unit Limit N Channel N Channel N Channel N Channel BVgss ig = - 1.0 ma V Min -20 -50 -30 -50 'gss Vgs = (),Vds = 0 nA Max 0.10 (-10V) 1.0 (- 30 V) 1.0 (-10V) 1.0 (â'" 30 V) VGS(off) Vos = 0, Id = 1-OnA V Min/Max -0.5/-6.0 (10 V) - 0.4/- 5.0 (15 V) - 0.4/- 5.0 (10V) -0.25/-4.5 (5.0 V) Idss Vds = (),Vgs = 0 mA Min/Max 0.3/6.5 (10V
-
OCR Scan
2SK59 SGD 2SK40 SGD 2SK17 SGD

J555

Abstract: 2SK40 Datasheet 2SK17, 2SK40 2SK59, 2SK105 IFN17, IFN40 IFN59, IFN105 J201, J202 J203, J204 J230, J231 J232 J500
InterFET
Original
J555 j556 2N4221 transistor J231 transistor j557 2N3954 2N3955 2N3956 2N3957 2N3958 2N4220

2SK68A

Abstract: 2SK44 . 5» 10 -0.45 -4. 95 10 30« 2. 7» 10 IDSS 2SK59 h 2 C-MIC N D -30 GDS -30 s 10m G 50m -ln -10 , 49 Dual PET 2SK58 0.5 3 120 100k 50 SGD 2SK59 190 -15 0 VON=10Vmax. í¿=4typ
-
OCR Scan
2SK68 2SJ20 2sK30 fet 2SK34 2SK30 FET 2SK23A 2SK44SP 2SJ299 2SJ300 2SJ317 2SK11 2SK12 2SK13

2SK146

Abstract: 2SK147 equivalent Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions Unit Limit N Channel N Channel N Channel N Channel N Channel BVGSS IG = ­ 1.0 µA V Min ­ 20 ­ 50 ­ 30 ­ 50 ­ 50 IGSS VGS = ( ), VDS = Ø
InterFET
Original
2SK147 2SK146 2SK147 equivalent 2sk146 equivalent transistor sdg 2sk146 datasheet IFN147

2sk82

Abstract: 2SK68A GDS 2SK60 24 24 1.6 5.5 -10 GDO 2SK59 IDSS " 6.5 3.5 2SK54 2SK55
-
Original
FD1840 2SK22 2SK37 2SK95 2SK97 2sk82 2SK76 2sk77 datasheet 2sk97 2SK41 Equivalent E-400 2N4392 2N4393 2SK15 2SK16H

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SC906 125 0 .0 6 - 3 .0 /1 0 2 /1 0 - 2SK331 C ap ac ito r M icrophone 2SK597 2026 S , N
-
OCR Scan
Transistor 2SA 2SB 2SC 2SD 2SC906 2SA1281 bup 3130 C3885A 2sd103 PA63H MPA68H BD241

NT101

Abstract: Kt606 2SK596 2037 N-Chanoel Junction Silicon Field-Effect Transistor Capacitor Microphone Applications Features . Especially suited for use In audio, telephone capacitor aloropbones â'¢ Excellent voltage characteristic â'¢ Excellent transient characteristic . Adoption of PBET process Absolute Maximum Ratings at Ta=25°C Gate to Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature ;GD0 TJ Tstg -20 10 1 100 125 -55 to +125 K1iQtrical
-
OCR Scan
NT101 Kt606 SEMICON INDEXES bf503 KT-934 ss120a T0226 T0237

IGBT M16 100-44

Abstract: Kt606 01# 01" 125 - - 60 to 800 fiA§§ 10| - - - - 2SK595 CP3 Electrostatic microphone impedance
-
OCR Scan
IGBT M16 100-44 transistor 8BB smd Transistor B0243C ASEA HAFO AB GM378 Ericsson SPO 1410 VV276

STK411-230E

Abstract: STK411-220E c c Q 2 SK 2 4 2 2SK283 2SK303 2SK334 2SK436 2SK443 2SK536 2SK543 2SK545 2SK595 2SK771 2SK848
Dalbani Catalog
Original
STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 TLF14712F TLF14718F TLF14731F TLF14531FV TLF14731F1A TLF14731F3A
Showing first 20 results.