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Part : 2SK3569(S5Q,J) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 100 Best Price : $11.40 Price Each : $14.60
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2SK3569 Datasheet

Part Manufacturer Description PDF Type
2SK3569 Toshiba FETs - Nch 500V<VDSS=700V; ; Package: TO-220SIS; R DS On (max 0.75); P D (W): (max 10) Original
2SK3569 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original

2SK3569

Catalog Datasheet MFG & Type PDF Document Tags

k3569

Abstract: 2SK3569 2SK3569 NMOS (-MOSVI) 2SK3569 : mm : RDS (ON) = 0.54 () : |Yfs| = 8.5 S , 2SK3569 (Ta = 25 , (RoHS) 2003 1 27 (EU 2002/95/EC) 2 2010-01-29 2SK3569 ID ­ VDS ID ­ VDS 5.3 , 100 (A) VGS = 10 V15V 1 3 10 ID 100 (A) 2010-01-29 2SK3569 RDS , 2SK3569 rth ­ tw () rth (t)/Rth (ch-c) 10 1 Duty=0.5 0.2 0.1 0.1 0.05 PDM
Toshiba
Original
2-10U1B k3569 K3569 DATASHEET K3569 equivalent compatible k3569 2SK3569+equivalent SC-67 25IAR

k3569

Abstract: 2SK3569 2SK3569 NMOS (-MOSVI) 2SK3569 : mm : RDS (ON) = 0.54 () : |Yfs| = 8.5 S , 2SK3569 (Ta = 25 , RoHS RoHS (RoHS) 2003 1 27 (EU 2002/95/EC) 2 2009-09-29 2SK3569 ID ­ VDS , 2SK3569 RDS (ON) ­ Tc IDR ­ VDS 2.5 100 Tc = 25°C (A) 2.0 VGS = 10 V IDR , ) 2009-09-29 2SK3569 rth ­ tw () rth (t)/Rth (ch-c) 10 1 Duty=0.5 0.2 0.1 0.1 0.05
Toshiba
Original

RG4 DIODE

Abstract: TK10A60D V 2SK3569 vs TK10A60D 90% - - Vth VDS = 10 V, ID = 1 mA 2.0 - , TO-220SIS + ­ 600 V/10 A 600 V/10 A + ­ 2SK3569 , - - -1.7 - - -1.7 V 2SK3569 TK10A60D 78% 76% 0 20 TK10A60D : VGS = ± 30 V, 2SK3569 : VGS = ± 25 V 40 60 80 Pout (W) 100 120 140 MOSFET DTMOS
-
Original
TK40J60T TK20A60U TK20J60U 2SK3911 RG4 DIODE RG-47 2SK3569 equivalent AC450-650V 600VDTMOS

k3569

Abstract: 2SK3569 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3569 Switching , 2SK3569 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-source , 2SK3569 ID ­ VDS 10 COMMON SOURCE Tc = 25°C PULSE TEST 10,8 6 4.6 4 4.4 2 4.2 5 4.8 6 5.3 20 10 5.1 , ID (A) DRAIN CURRENT ID (A) 3 2006-11-08 2SK3569 RDS (ON) ­ Tc 2.5 100 IDR , TEMPERATURE Tc (°C) TOTAL GATE CHARGE Qg (nC) 4 2006-11-08 2SK3569 rth ­ tw
Toshiba
Original
K3569 data transistor k3569 transistor 2SK3569 k3569 transistor k3569 Silicon N Channel MOS Type 2SK3569 application

K3569

Abstract: transistor k3569 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3569 Switching , transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-08 2SK3569 , finish. 2 2006-11-08 2SK3569 ID ­ VDS ID ­ VDS 5.3 6 5 10,8 4.8 6 4.6 4 , 10 DRAIN CURRENT ID 3 100 (A) 2006-11-08 2SK3569 RDS (ON) ­ Tc IDR ­ VDS , ) ( ) 2.5 (nC) 2006-11-08 2SK3569 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c
Toshiba
Original
toshiba k3569 k356

K3569

Abstract: K3569 equivalent 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3569 Switching , 2SK3569 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ , 2005-01-24 2SK3569 ID ­ VDS ID ­ VDS 8 COMMON SOURCE 20 5.3 6 5.1 5 10,8 , DRAIN CURRENT ID 3 100 (A) 2005-01-24 2SK3569 RDS (ON) ­ Tc IDR ­ VDS 100 , (nC) 2005-01-24 2SK3569 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth ­
Toshiba
Original

transistor k3569

Abstract: K3569 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3569 Switching , 2004-03-04 2SK3569 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , TYPE Lot Number 2 2004-03-04 2SK3569 ID ­ VDS ID ­ VDS 5.3 6 ID DRAIN , ) 2004-03-04 2SK3569 RDS (ON) ­ Tc IDR ­ VDS 100 PULSE TEST 2.0 ID = 12A 1.5 6 1.0 3 VGS , DRAIN-SOURCE ON RESISTANCE RDS (ON) ( ) 2.5 (nC) 2004-03-04 2SK3569 NORMALIZED TRANSIENT
Toshiba
Original

k3569

Abstract: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ï'-MOSVI) 2SK3569 , handle with caution. 3 1 2004-07-01 2SK3569 Electrical Characteristics (Ta = 25Â , lead (Pb)-free finish. 2 2004-07-01 2SK3569 ID â'" VDS ID â'" VDS 8 COMMON SOURCE , (A) 2004-07-01 2SK3569 RDS (ON) â'" Tc IDR â'" VDS 100 COMMON SOURCE DRAIN REVERSE , 2SK3569 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth â'" tw 10 1 Duty
Toshiba
Original

transistor compatible k3569

Abstract: K3569 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3569 Switching , transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 2SK3569 , hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SK3569 ID ­ VDS , ) 2009-09-29 2SK3569 RDS (ON) ­ Tc IDR ­ VDS 100 COMMON SOURCE DRAIN REVERSE CURRENT IDR (A , ON RESISTANCE RDS (ON) ( ) 2.5 (nC) 2009-09-29 2SK3569 NORMALIZED TRANSIENT THERMAL
Toshiba
Original
transistor compatible k3569 transistor compatible 2SK3569

2sk3569

Abstract: transistor compatible k3569 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3569 Switching , 2SK3569 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ , electronic equipment. 2 2010-01-29 2SK3569 ID ­ VDS ID ­ VDS 5.3 6 5 DRAIN CURRENT , = 10 V15V 1 10 DRAIN CURRENT ID 3 100 (A) 2010-01-29 2SK3569 RDS (ON) ­ , ) ( ) 2.5 (nC) 2010-01-29 2SK3569 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c
Toshiba
Original

2sk3569

Abstract: 2SK3569 equivalent TENTATIVE 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) 2SK3569 unit Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k) VDGR 600 V Gate-source voltage , device. Please handle with caution. 3 1 2003-04-08 TENTATIVE 2SK3569 Electrical , recovery charge Qrr dIDR/dt = 100 A/µs 1.63 µC 2 2003-04-08 2SK3569
Toshiba
Original
lw015f84

YAGEO DATE CODE

Abstract: UM10440 Lamp2 Q2 2SK3569 GLHB 1 X3 150 nF C12 T5A 127 uH 2 R13 140 kΩ WB2 R24 , 1 Q3 2SK3569 GHHB 4 3 T4B C9 220 nF 3 T6B 2 3 2.2 nF WB1 4 uH 1 , 2SK3767 2SK3767(Q) Toshiba Q2 2SK3569 2SK3569 Toshiba Q3 2SK3569 2SK3569
NXP Semiconductors
Original
UM10440 YAGEO DATE CODE CC0805KRX7R9BB104 UBA2015AT

2SK3562

Abstract: 2SK3568 toff10% 3 VDSS(V) 2SK3563 2SK3561 2SK3568 2SK3567 2SK3562 2SK3667 2SK3569
Toshiba
Original
2SK2545 2SK2996 220SIS TC7MTX01 TO220-NIS SDMINI 03-3457-3405FAX 2002MRAM TMP1962C10BXB/ TMP1962F10AXB ROM40 TMP1962C10BXB

TK10A60D

Abstract: TB6817WBG TK10A60D 2SK3569 600 V/10 A 600 V/10 A -MOSVI TO-220SIS TO , - - ­1.7 V TK10A60D : VGS = ± 30 V, 2SK3569 : VGS = ± 25 V 120 W(20 V/6 A , =4.7 Efficiency 86% VOUT PFC + ­ VIN + ­ MAIN 84% RG=47 RG=47 82% 80% 2SK3569 vs TK10A60D 2SK3569 TK10A60D 78% 76% 0 20 60 80 Pout (W) 40 100 120 , -220SIS TO-220SIS TK10A60D 10 1 0.75 2SK3667 2SK3569 TO-220SIS TK11A60D 11 0.65
Toshiba
Original
TK60A08J1 TK15A50D TK13A60D TB6817WBG 4614 mosfet TCV7102F TPCA8030-H TPC8A03 TLP285/TLP781 TB6818FG/TB6819FG TLP181/TLP283/TLP285/TLP781

2SK3569 equivalent

Abstract: UBA2021P 2SK3569 G 1 2 R2 0 1 X115 header 2 socket 13 1 2 47 k 2 2 Y5 , insertion of daughterboard 1 Cdc X114 header 2 S socket 3 43 k 1 V3 2SK3569 G , placed in X2 and X14. The supplied NMOST's are Toshiba 2SK3569 (VDS = 600 V; ID = 10 A; RDSon = 0.54 ). , GBU8K BRIDGE 800 V, 8 A TH V3, V6 2SK3569 MOSFET N-ch 600 V 10 A 0.54 V15 Terminal
NXP Semiconductors
Original
UM10412 UBA2014 UBA2021P MKP x2 SH 275 RC12H transistor x112 TPX-54 UBA2021

2SK3562 equivalent

Abstract: 2SK3561 2SK3767 2SK3567 2SK3562 2SK3667 2SK3569 500 500 600 600 600 600 600 8 12 2 3.5 6 7.5
Toshiba
Original
2SK2543 2SK3562 equivalent 2SK3759 2SK3566 2SK3561 equivalent to220sis 2SK3568 equivalent DP0540007

2SK3567 equivalent

Abstract: 2SK3569 equivalent Package Test Conditions -MOSVI -MOSVII 2SK3569 TK10A60D 600 V/10 A 600 V/10 A TO-220SIS TO , : TK10A60D : VGS = ± 30 V, 2SK3569 : VGS = ± 25 V Efficiency Test Circuit 120W (20V/6A) Flyback , 86% 84% RG=47 RG=47 82% 80% 2SK3569 vs TK10A60D 2SK3569 TK10A60D 78% 76% 0 , -220SIS 1.25 - 2SK3562 TO-220SIS 10 1 0.75 2SK3667 2SK3569 TO-220SIS 3.5 4 6 600 , 2SK3561 2SK2842 2SK2698 2SK3132 2SK3907 2SK3562 2SK3569 2SK3797 2SK3911 Characteristics of
Toshiba
Original
2SK3567 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent 2SK941 equivalent BCE0017F E-28831 BCE0017G

2SK3569 equivalent

Abstract: Y2W zener 1 1 V6 2SK3569 G 3 1 2 47 k 2 1 X115 header 2 PCS_2021 13 1 , insertion of daughter board 1 Cdc X114 header 2 S socket 3 43 k 1 V3 2SK3569 G , 2SK3569 (VDS = 600 V; ID = 10 A; RDSon = 0.54 ). When using different NMOS types, the values of gate , V3, V6 2SK3569 FET MOS N-ch 600 V, 10 A 0,54E V15 not mounted X1, X3, X68 MKDS 2,5
NXP Semiconductors
Original
Y2W zener zener diode y2w Y2w TRANSISTOR TRAFO CT 350 mA Y2P TRANSISTOR capacitor MKP X2 SH UM10395

Power MOSFET, toshiba

Abstract: 2sk3561 Up Conventional Part Number 2SK3563 2SK3561 2SK3568 2SK3567 2SK3562 2SK3667 2SK3569 2SK3566
Toshiba
Original
Power MOSFET, toshiba 4502 mosfet HIGH POWER MOSFET TOSHIBA 2SK3742 2sk3131 MOSFET TOSHIBA VDSS100V DP0530019 2SK3310 2SK3126

transistor compatible 2SK3569

Abstract: TK12A65D 330 0.22 F VCC C7 0.1 F 50 V Q1 2SK3569 10 DRIVER F R12 R21 n.a , 10 A; 600 V (0.75 ) MOSFET, 2SK3569/Toshiba, 15p-typical TO-220F U1 TEA1733(L)T
Toshiba
Original
TK12A65D tk6a65d equivalent TPCA8019-H TPCA8023-H TB-7005 p 181 Photocoupler SCE0024B SCE0024C
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