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Part : 2SK3501-01 Supplier : Fuji Electric Manufacturer : Allied Electronics & Automation Stock : - Best Price : $1.50 Price Each : $2.08
Part : 2SK3504-01 Supplier : Fuji Electric Manufacturer : Allied Electronics & Automation Stock : - Best Price : $1.65 Price Each : $1.65
Part : 2SK350 Supplier : Hitachi Manufacturer : Bristol Electronics Stock : 70 Best Price : $4.8530 Price Each : $11.20
Part : 2SK3505-01MR-F82-S12RR Supplier : Fuji Electric Manufacturer : Chip One Exchange Stock : 1,000 Best Price : - Price Each : -
Part : 2SK3501-01SC Supplier : Fuji Electric Manufacturer : Chip1Stop Stock : 240 Best Price : $14.90 Price Each : $14.90
Part : 2SK3502-01MRSC Supplier : Fuji Electric Manufacturer : Chip1Stop Stock : 50 Best Price : $14.90 Price Each : $14.90
Part : 2SK3504-01SC Supplier : Fuji Electric Manufacturer : Chip1Stop Stock : 90 Best Price : $17.7000 Price Each : $17.7000
Part : 2SK3505-01MRSC Supplier : Fuji Electric Manufacturer : Chip1Stop Stock : 275 Best Price : $14.00 Price Each : $14.00
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2SK350 Datasheet

Part Manufacturer Description PDF Type
2SK350 Hitachi Semiconductor Silicon N-Channel MOS FET, High Speed Power Switching Scan
2SK350 Hitachi Semiconductor Silicon N-Channel MOSFET Scan
2SK350 N/A FET Data Book Scan
2SK350 N/A Shortform Datasheet & Cross References Data Scan
2SK350 N/A Semiconductor Master Cross Reference Guide Scan
2SK3501-01 Fuji Electric Power MOSFET, 600V 10A, MOS-FET N-Channel enhanced Original
2SK3501-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original
2SK3502 Fuji Electric N CHANNEL SILICON POWER MOSET Original
2SK3502-01MR Fuji Electric Power MOSFET, 600V 10A, MOS-FET N-Channel enhanced Original
2SK3502-01MR Fuji Electric N-CHANNEL SILICON POWER MOSFET Original
2SK3503 NEC N Channel enhancement MOS FET Original
2SK3503-T1 NEC N Channel enhancement MOS FET Original
2SK3503-T2 NEC N Channel enhancement MOS FET Original
2SK3504-01 Fuji Electric Power MOSFET, 500V 14A, MOS-FET N-Channel enhanced Original
2SK3504-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original
2SK3505 Sanyo Semiconductor N CHANNEL SILICON POWER MOSFET Original
2SK3505-01 Sanyo Semiconductor N CHANNEL SILICON POWER MOSFET Original
2SK3505-01MR Fuji Electric N-CHANNEL SILICON POWER MOSFET 500V/±14A Original
2SK3505-01MR Fuji Electric N-Channel Silicon Power MOSFET Original
2SK3505-01MR Fuji Electric Power MOSFET, 500V 14A, MOS-FET N-Channel enhanced Original
Showing first 20 results.

2SK350

Catalog Datasheet MFG & Type PDF Document Tags

ko332

Abstract: 2SK350 !(UPlÃhLhÃIRÃNIUS; 2SK349, 2SK350- TYPICAL CAPACITANCE VS. DRAIN-SOURCE VOLTAGE â r 300 8. ¿3 100 Vcs=0 - , RATINGS (Ta=25 °C) (TO-3P) Item Symbol Rating Unit 2SK349 2SK350 Drain-Source Voltage Voss 400 450 V , Breakdown 2SK349 Viäxiass 7o=10mA, Vos=0 400 â'" â'" V Voltage 2SK350 450 - - V Gate-Source Leak Current , 2SK350 W=360V. Vas=0 Gate-Source Cutoff Voltage Vos off) /o=lmA, VDJ=10V 1.0 - 5.0 V Static , (A) 73 4 4e] (â¡ 505 DGlGOai 4 73C 10021 D T-'bl-^ -2SK349, 2SK350 TYPICAL OUTPUT CHARACTERISTICS to
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OCR Scan
ko332 ko33

2SK350

Abstract: 2Sk350 HITACHI HITACHI/-COPTOELECTROIMICS} ^äb^Ub Hl lÃ"UHlMüHlÃbLLCTRüNlUä; 2SK349, 2SK350â'"- TYPICAL , 2SK350 Drain-Source Voltage Voss 400 450 V Gate-Source Voltage Vass ±20 V Drain Current h 10 A , 400 â'" â'" V 2SK350 Id- 10mA, Vasâ'"0 450 â'" â'" V Gate-Source Leak Current less VCS=±20V, Km=0 â'" â'" ±1 fA Zero Gate Voltage Drain Current 2SK349 loss Koi=320V. Vos=0 - - 1 mA 2SK350 W , D T-^t'^ -2SK349, 2SK350 TYPICAL OUTPUT CHARACTERISTICS to 15V *10\ 18V \ j r \ V
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OCR Scan
2Sk350 HITACHI P73C m12g 7v25 Hitachi Scans-001 VARO

2SJ99

Abstract: 2SK354 10 5 2SK350 Bit HS PS» MOS N E 450 DSS ±20 s 10 D 100 ±1« ±20 lm 360 5 10 1» 1.3 2.5 10 5 , ) 1500 35 0 10 0.9 15 5 149 GDS 2SK349 1500 35 0 10 0.9 15 5 149 GDS 2SK350 1900 40 0 10
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OCR Scan
2SK331 2SK332 2SK333 2SK334 2SK336 2SK337 2SJ99 2SK354 2SK356 2sk3542 2SK347

2sk350 hitachi

Abstract: 2SK350 ->U=3> N^ï^MOS FET mm) SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING 3.2 + 0.2 5.0m ax. 1.5 1.6 typ 0.6 ±0.2 1. Y - h : Gate 2. K u A > : Drain (7 7 > ->') (Flange) 3. V â'" XI Source (Dimensions in mm) (TO-3P) IÃ*Ã*3Ãtt ABSOLUTE MAXIMUM RATINGS (7a=25°C) 1 & i 1 i . mi 1 Symbol 2SK349 2SK350 Unit K y -i y y â'¢ y - x 11± VDSS 400 450 V r - h ' - . y - x % E Vgss ±20  ,   ELECTRICAL CHARACTERISTICS (7a= 25°C) s Symbol Test Condition 2SK349 2SK350 Unit a min. typ
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OCR Scan
KDS -5a

2sk350 hitachi

Abstract: 2SK350 HI T A C H I / { O P TO ELECT RO NI CS } - 2 p re t? ? x r5 ^ H ^ } 73 D E ] M4c ib à 0 S ^ D Î0 D â Ô I 73C 10020 2SK349,2SK350 S IL IC O N N -C H A N N E L M O S FET )max 1.5 HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER FEATURES · · · · · Low O n-Resistance. High Speed Sw itching. High Cutoff Frequency. No Secondary Breakdown. Suitable for S w itching Regulator. OC-DC Con v e rte r, M o to r C ontrol, a n d U ltras o n ic P ow er Oscillators. 2. Drain
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OCR Scan

IRF740 "direct replacement"

Abstract: irf9640 REPLACEMENT GUIDE 2SK350 HITACHI 2SK382 2SK383 2SK399 2SK400 2SK402 2SK403 2SK408 2SK409 2SK412 2SK413 2SK414 2SK428
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IRF9613 IRFP333 VN0106N5 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 rca9213a IRF510 IRF511 IRF512 IRF513 IRF520 IRF521

2sk4005

Abstract: 2SK385 Absolutes maximum ratings (Ta=25ºC) PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321 2SK322 2SK323 2SK324 2SK325 2SK330 2SK331 2SK332 2SK333 2SK334 2SK336 2SK337 2SK338 2SK339 2SK343 2SK344 2SK345 2SK346 2SK347 2SK349 2SK350 2SK351 2SK352 2SK353 (V) -55 20 -30 -30
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Original
2sk4005 2SK385 2SK386 2SK357 2SK308 2Sk310 2SK311 2SK312 2SK354A

IRF732P

Abstract: IRF722P CROSS REFERENCE IN D U S TR Y S TAN D AR D 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 2SK345 2SK346 2SK349 2SK350 2SK357 2SK382 2SK383 2SK399 2SK403 2SK428 2SK440 2SK512 2SK527 2SK528 2SK532 2SK549 2SK552 2SK553 2SK554 2SK555 2SK556 2SK557 2SK560 2SK643 2SK644 2SK672 2SK673 2SK674 2SK708 2SK788 2SK789 2SK790 BUZ10 BUZ10A BU211 S G S -TH O M S O N S G S -TH O M S O N N E A R E S T SGSP351 IRF723 IRF142 IRF722 IRF833 SGSP575 IRF453 IRF730 IRF843 SGSP575 SGSP358 IRF523
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OCR Scan
SGSP321 SGSP367 IRF540FI SGSP381 BUZ71 SGSP369 IRF732P IRF722P SGSP3055 1rfp450 MTP20N10 irf522p IRFP453 SGSP317 IRF822 IRF530 SGSP461 SGSP474

TP8N10

Abstract: th15n20 CROSS REFERENCE INDUSTRY STANDARD 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 2SK345 2SK346 2SK349 2SK350 2SK357 2SK382 2SK383 2SK399 2SK403 2SK428 2SK440 2SK512 2SK527 2SK528 2SK532 2SK549 2SK552 2SK553 2SK554 2SK555 2SK556 2SK557 2SK560 2SK643 2SK644 2SK672 2SK673 2SK674 2SK708 2SK788 2SK789 2SK790 BUZ10 BUZ10A BUZ11 SGS-THOMSON SGS-THOMSON NEAREST SGSP351 IRF723 IRF142 IRF722 IRF833 SGSP575 IRF453 IRF730 IRF843 SGSP575 SGSP358 IRF523 IRFP453 IRFP453 SGSP317 IRF822 IRF530
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OCR Scan
TP3055A TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI IRF452 MTP3055AFI IRF722FI IRF842 IRF841

2SK4110

Abstract: 2SK4111 2SK551 2SK440 2SK400 2SK412 2SK350 2SK557 2SK560 (2SK561 ) 2SK401 2SK313 2SK512 2SK351 PM4 550C , 2SK414 2SJ119 2SK412 2SK346 2SJ102 2SK428 2SJ122 2SK319 2SK320 2SK554 2SK413 2SK118 2SK400 2SJ114 2SK350
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Original
2SK4110 2SK4111 2SK4106 2sk4112 2sk2671 2sk4113 2SK258 2SK259 2SK258H 2SK259H 2N5120DIE 2C5120

hitachi mosfet power amplifier audio application

Abstract: 2SK215 equivalent 2SK3505-01MR Super FAP-G Series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving , to ambient Min. Typ. Max. 2.08 62.0 Units °C/W °C/W 1 2SK3505-01MR FUJI , 2SK3505-01MR FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID , 2SK3505-01MR Zth(ch-c) [K/W] 10 1 10 FUJI POWER MOSFET Transient Thermal impedance Zth(ch-c
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OCR Scan
hitachi mosfet power amplifier audio application 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent k399 2SK375 2SK535 2SK580 RE79-24

sn76131

Abstract: tlo72cp 2SK3502-01MR Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary , channel to ambient Min. Typ. Max. 1.79 58.0 Units °C/W °C/W 1 2SK3502-01MR FUJI , 10 ID [A] 0 5 10 15 20 ID [A] 2 2SK3502-01MR FUJI POWER MOSFET , 10 0 10 1 ID [A] 3 2SK3502-01MR 1 10 Zth(ch-c) [°C/W] 10 FUJI POWER
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Original
sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510

TXD10K40

Abstract: TXD10K60 Type Name : 2SK3502-01MR Spec. No. : MS5F4981 Date : Apr.-02-2001 Fuji Electric Co , 1 / 19 H04-004-05 1.Scope This specifies Fuji Power MOSFET 2SK3502-01MR 2
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OCR Scan
TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 S3131 BLU52 1N321 BYW56 1N321A BLV97

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SA1281 Type Name : 2SK3501-01 Spec. No. : MS5F4980 Date : Apr.-02-2001 Fuji Electric Co , 1 / 19 H04-004-05 1.Scope This specifies Fuji Power MOSFET 2SK3501-01 2
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OCR Scan
Transistor 2SA 2SB 2SC 2SD 2SA1281 2SK596 bup 3130 C3885A 2SC906 PA63H MPA68H BD241
Showing first 20 results.