NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SK2789 | Toshiba | Power MOSFET Selection Guide with Cross Reference Data |
45 pages, |
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| 2SK2789 | Toshiba | N-Channel MOSFET |
6 pages, |
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| 2SK2789 | Toshiba | Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications |
5 pages, |
Scan | |
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| 2SK2789 | Toshiba | Power MOSFETs Cross Reference Guide |
67 pages, |
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| 2SK2789 | Toshiba |
9 pages, |
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| 2SK2789 | Toshiba | Field Effect Transistor Silicon N Channel MOS Type |
5 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SK2789 2 NMOS (L -MOS) 2SK2789 DC-DC : mm 4V : RDS (ON) = 66 m () : |Yfs| = 16S () : IDSS = 100A () (VDS = 100V) : Vth = 0.82.0V (VDS = 10VID 10VID = 1mA) (Ta = , g () MOS 1 2006-11-17 2SK2789 (Ta = 25 , (: : ) 2 2006-11-17 2SK2789 3 2006-11-17 2SK2789 4 2006-11-17 2SK2789 5 2006-11-17 2SK2789 20070701-JA 20070701-JA � � " " � � � RoHS RoHS ... | Original |
6 pages, |
2SK2789 K2789 2SK2789 abstract |
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| Abstract: 2SK2789 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -MOSV) 2SK2789 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low , JEDEC JEITA TOSHIBA 2-10S2B 2-10S2B Weight: 1.5 g (typ.) 1 2004-07-06 2SK2789 , 2004-07-06 2SK2789 3 2004-07-06 2SK2789 4 2004-07-06 2SK2789 RG = 25 VDD = 25 V, L = 428 uH 5 E AS = 1 B VDSS L I2 2 B VDSS - VDD 2004-07-06 2SK2789 ... | Original |
6 pages, |
2SK2789 K2789 2SK2789 abstract |
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| Abstract: 2SK2789 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -MOSV) 2SK2789 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low , JEDEC JEITA TOSHIBA 2-10S2B 2-10S2B Weight: 1.5 g (typ.) 1 2002-06-27 2SK2789 , 2SK2789 3 2002-06-27 2SK2789 4 2002-06-27 2SK2789 RG = 25 VDD = 25 V, L = 428 uH 5 E AS = 1 B VDSS æ ö Ã- L Ã- I2 Ã- ç ÷ 2 B VDSS - VDD ø è 2002-06-27 2SK2789 ... | Original |
6 pages, |
2SK2789 2SK2789 abstract |
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| Abstract: 2SK2789 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -MOSV) 2SK2789 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low , JEDEC JEITA TOSHIBA 2-10S2B 2-10S2B Weight: 1.5 g (typ.) 1 2002-06-27 2SK2789 , 2SK2789 3 2002-06-27 2SK2789 4 2002-06-27 2SK2789 RG = 25 VDD = 25 V, L = 428 uH 5 E AS = 1 B VDSS L I2 2 B VDSS - VDD 2002-06-27 2SK2789 ... | Original |
6 pages, |
2sk2789 2SK2789 2SK2789 abstract |
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| Abstract: 2SK2789 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -MOSV) 2SK2789 , device. Please handle with caution. 1 2006-11-20 2SK2789 Electrical Characteristics (Ta = 25°C , (Pb)-free package or lead (Pb)-free finish. 2 2006-11-20 2SK2789 3 2006-11-20 2SK2789 4 2006-11-20 2SK2789 RG = 25 VDD = 25 V, L = 428 H 5 EAS = B VDSS 1 L I2 B VDSS - VDD 2 2006-11-20 2SK2789 RESTRICTIONS ON PRODUCT USE ... | Original |
6 pages, |
2SK2789 K2789 2SK2789 abstract |
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| Abstract: 2SK2789 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -MOSV) 2SK2789 , 2009-09-29 2SK2789 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SK2789 3 2009-09-29 2SK2789 4 2009-09-29 2SK2789 RG = 25 VDD = 25 V, L = 428 H 5 EAS = B VDSS 1 L I2 B VDSS - VDD 2 2009-09-29 2SK2789 RESTRICTIONS ON PRODUCT USE · ... | Original |
6 pages, |
2SK2789 K2789 2SK2789 abstract |
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| Abstract: 2SK2789 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -MOSV) 2SK2789 , 2009-12-21 2SK2789 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , hazardous substances in electrical and electronic equipment. 2 2009-12-21 2SK2789 3 2009-12-21 2SK2789 4 2009-12-21 2SK2789 RG = 25 VDD = 25 V, L = 428 H 5 EAS = B VDSS 1 L I2 B VDSS - VDD 2 2009-12-21 2SK2789 RESTRICTIONS ON PRODUCT USE · ... | Original |
6 pages, |
2SK2789 K2789 2SK2789 abstract |
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| Abstract: TOSHIBA 2SK2789 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-?r-MOSV) 2SK2789 , 2SK2789 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. typ. MAX. , Alphabet A) -Year (Last Number of the Christian Era) 2000-02-02 2/5 TOSHIBA 2SK2789 id - vds COMMON , 3 5 10 30 50 DRAIN CURRENT ID (A) 100 2000-02-02 3/5 TOSHIBA 2SK2789 0.20 0.15 RDS(ON) - Te , ) 2000-02-02 4/5 TOSHIBA 2SK2789 rth - tv Duty = t/T Rth(ch-c) = 2.08oC/W SAFE OPERATING AREA 300 100 ... | OCR Scan |
5 pages, |
2SK2789 2SK2789 abstract |
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| Abstract: TOSHIBA 2SK2789 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-?r-MOSV) 2SK2789 , Handbook. 1996-12-01 1/5 TOSHIBA 2SK2789 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL , 2SK2789 ID - vds id - vds COMMON SOURCE Te = 25°C .10, Vf 3 4 _ , 3 5 10 30 50 100 DRAIN CURRENT ID (A) 1996-12-01 3/5 TOSHIBA 2SK2789 « o 2 22 ES ^ ga ¡3 , 4/5 TOSHIBA 2SK2789 rth - tv lm 10m PULSE WIDTH V 100m SAFE OPERATING AREA 300 100 50 30 ... | OCR Scan |
5 pages, |
2SK2789 2SK2789 abstract |
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| Abstract: TOSHIBA 2SK2789 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-?r-MOSV) 2SK2789 , 2SK2789 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. typ. MAX. , (Starting from Alphabet A) -Year (Last Number of the Christian Era) 1998-11-12 2/5 TOSHIBA 2SK2789 id - VDS , DRAIN CURRENT ID (A) 3 5 10 30 50 100 DRAIN CURRENT ID (A) 1998-11-12 3/5 TOSHIBA 2SK2789 0.20 0.15 RDS , 2SK2789 rth - tv safe operating area 300 100 50 30 10 lm 10m 100m PULSE WIDTH tw (s) 200 0.5 0.3 0.1 L_ ... | OCR Scan |
5 pages, |
2SK2789 2SK2789 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| + GAMMA=0 + KAPPA=0) *$ .MODEL M2SK2789 NMOS( + LEVEL=3 + L=2.0000E-6 0000E-6 0000E-6 0000E-6 + W=30 + KP=1.0223E-6 0223E-6 0223E-6 0223E-6 + RS www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/mixed part list/spice-models-collection/jpwrmos.lib |
Spice Models | 29/07/2012 | 86.34 Kb | LIB | jpwrmos.lib |
| + GAMMA=0 + KAPPA=0) *$ .MODEL M2SK2789 NMOS( + LEVEL=3 + L=2.0000E-6 0000E-6 0000E-6 0000E-6 + W=30 + KP=1.0223E-6 0223E-6 0223E-6 0223E-6 + RS www.datasheetarchive.com/files/spicemodels/misc/jpwrmos.lib |
Spice Models | 22/09/2001 | 86.36 Kb | LIB | jpwrmos.lib |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| FDB2552 | FDB2552 Buy | 2SK2789(SM) Buy | Toshiba | Close | Power MOSFET | 150V N-Channel UltraFET Trench MOSFET |
| FDB2572 | FDB2572 Buy | 2SK2789(SM) Buy | Toshiba | Close | Power MOSFET | 150V N-Channel UltraFET Trench MOSFET 29A, 0.056 Ohms @ VGS = 10V, TO-263/D2PAK Package |
| FDB3682 | FDB3682 Buy | 2SK2789(SM) Buy | Toshiba | Close | Power MOSFET | 100V N-Channel Power Trench MOSFET 32A, 0.036 ohm @ Vgs = 10V, TO-263/D2PAK Package |
| FDB42AN15A0 | FDB42AN15A0 Buy | 2SK2789(SM) Buy | Toshiba | Close | Power MOSFET | Discrete Automotive N-Channel PowerTrench MOSFET, 150V, 35A, 0.042 ohms @ Vgs = 10 V, TO-263/D2PAK Package |
| FQD13N10L | FQD13N10L Buy | 2SK2789(SM) Buy | Toshiba | Close | Power MOSFET | 100V N-Channel Logic Level QFET |
| FQD19N10L | FQD19N10L Buy | 2SK2789(SM) Buy | Toshiba | Close | Power MOSFET | 100V N-Channel Logic Level QFET |
| STMicroelectronics Part | Industry Part | Manufacturer | Type | Description |
| Part | Similar Part | Notes |
| 2SK2789 Buy | STB22NE10LT4 Buy |