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Part : 2SK1909-DL-E Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 6,000 Best Price : $1.77 Price Each : $2.17
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2SK1933 Datasheet

Part Manufacturer Description PDF Type
2SK1933 Hitachi Semiconductor Silicon N Channel MOS FET Original
2SK1933 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK1933 Hitachi Semiconductor Mosfet Guide Original
2SK1933 Hitachi Semiconductor Silicon N Channel MOS FET Original
2SK1933 Renesas Technology Silicon N Channel MOS FET Original
2SK1933 Renesas Technology Silicon N-Channel MOS FET Original
2SK1933 Hitachi Semiconductor Power Transistors Data Book Scan
2SK1933 N/A Catalog Scans - Shortform Datasheet Scan
2SK1933 N/A FET Data Book Scan

2SK1933

Catalog Datasheet MFG & Type PDF Document Tags

2SK1933

Abstract: K1933 2SK1933 Silicon N-Channel MOS FET HITACHI Application High speed power switching , regulator Outline `i TO- G o1. Gate 2. Drain (Flange) 3. Source 692 2SK1933 Absolute , 1600 - ns lF = 10 a , V gs = 0, diF / dt = 100 A / |is 694 HITACHI 2SK1933 Power , 2SK1933 1.0 c o , _, CO > 1 - 3 Drain to Source Saturation Voltage vs. G ate to Source Voltage ! . , perature Tc (°C) Drain Current I d (A) 696 HITACHI 2SK1933 Body to Drain Diode Reverse
-
OCR Scan
K1933
Abstract: 2SK1933 Silicon N-Channel MOS FET HITACHI Nov. 1, 1996 Application High speed power , 2. Drain (Flange) 3. Source 2SK1933 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol , HITACHI 2SK1933 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit , 1. Pulse T est 3 HITACHI 2SK1933 M axim um Safe O pe ra tion A rea O CO Q_ O , 6 8 G ate to S ou rce V olta ge V q s (V) 10 2SK1933 Drain to S ou rce S atu ration V -
OCR Scan

Hitachi DSA002781

Abstract: 2SK1933 Silicon N-Channel MOS FET Application High speed power switching Features · · · · , Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1933 Absolute Maximum , Tstg 2 1 Ratings 900 ±30 10 30 10 150 150 ­55 to +150 Unit V V A A A W °C °C 2 2SK1933 , 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK1933 , VDS (V) Gate to Source Voltage VGS (V) 4 2SK1933 Drain to Source Saturation Voltage vs
Hitachi
Original
Hitachi DSA002781 D-85622

HX 830

Abstract: Hitachi DSA00398 2SK1933 Silicon N-Channel MOS FET Application High speed power switching Features · · · , 2SK1933 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source , . Value at Tc = 25°C 2 2SK1933 Electrical Characteristics (Ta = 25°C) Item Symbol Min , - ns I F = 10 A, VGS = 0, diF / dt = 100 A / µs Note 1. Pulse Test 3 2SK1933 , 2SK1933 Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State
Hitachi Semiconductor
Original
HX 830 Hitachi DSA00398

2SK1933

Abstract: products contained therein. 2SK1933 Silicon N-Channel MOS FET ADE-208-1332 (Z) 1st. Edition Mar , S 3 1. Gate 2. Drain (Flange) 3. Source 2SK1933 Absolute Maximum Ratings (Ta = 25 , +150 °C Notes 1. PW 10 µs, duty cycle 1 % 2. Value at Tc = 25°C 2 2SK1933 Electrical , Test 3 2SK1933 Maximum Safe Operation Area Power vs. Temperature Derating 50 30 µs , Voltage VGS (V) 10 2SK1933 Drain to Source Saturation Voltage vs. Gate to Source Voltage
Hitachi Semiconductor
Original

2SK1933

Abstract: DSA003639 2SK1933 Silicon N-Channel MOS FET ADE-208-1332 (Z) 1st. Edition Mar. 2001 Application High , . Drain (Flange) 3. Source 2SK1933 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings , , duty cycle 1 % 2. Value at Tc = 25°C 2 2SK1933 Electrical Characteristics (Ta = 25°C) Item , 2SK1933 Maximum Safe Operation Area Power vs. Temperature Derating 50 30 µs m s lim in , VGS (V) 10 2SK1933 Drain to Source Saturation Voltage vs. Gate to Source Voltage Static
Hitachi Semiconductor
Original
DSA003639

2SK1933

Abstract: 2SK1933 Silicon N Channel MOS FET Application TO­3P High speed power switching Features , - * PW 10 µs, duty cycle 1 % * Value at Tc = 25 °C 2SK1933 Table 2 Electrical , - * Pulse Test 2SK1933 Maximum Safe Operation Area Power vs. Temperature Derating 50 , Gate to Source Voltage VGS (V) 10 2SK1933 Static Drain to Source on State Resistance vs , Current I D (A) 10 2SK1933 Body to Drain Diode Reverse Recovery Time Typical Capacitance vs
Hitachi Semiconductor
Original

Hitachi DSA002749

Abstract: 2SK1933 Silicon N-Channel MOS FET Nov. 1, 1996 Application High speed power switching , regulator Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1933 Absolute , 2SK1933 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source , 2SK1933 Power vs. Temperature Derating 150 Channel Dissipation Pch (W) Maximum Safe Operation Area 50 30 , Voltage VGS (V) 4 2SK1933 Drain to Source Saturation Voltage vs. Gate to Source Voltage 1.0 Drain
Hitachi
Original
Hitachi DSA002749
Abstract: Ordering Information Part Name 2SK1933-E Quantity 360 pcs Shipping Container Box (Tube) Note , developed or manufactured by or for Renesas Electronics. 2SK1933 Silicon N Channel MOS FET REJ03G0984 , . Drain (Flange) 3. Source G 1 Rev.3.00 Apr 27, 2006 page 1 of 6 2 S 3 2SK1933 , "¦ IF = 10 A, VGS = 0 IF = 10 A, VGS = 0, diF/dt = 100 A/µs 2SK1933 Main Characteristics , to Source on State Resistance RDS (on) (â"¦) 2SK1933 2.5 2.0 ID = 5 A Pulse Test VGS = Renesas Technology
Original
Abstract: 0.2 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1933-E Quantity 360 pcs Box , Renesas Electronics. 2SK1933 Silicon N Channel MOS FET REJ03G0984-0300 (Previous: ADE-208-1332) Rev , , 2006 page 1 of 6 2SK1933 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage , = 0, diF/dt = 100 A/µs Rev.3.00 Apr 27, 2006 page 2 of 6 2SK1933 Main Characteristics , Voltage VGS (V) Drain Current ID (A) Rev.3.00 Apr 27, 2006 page 3 of 6 2SK1933 Static Drain to Renesas Technology
Original

2SK1933

Abstract: 2SK1933-E 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1933-E , 2SK1933 Silicon N Channel MOS FET REJ03G0984-0200 (Previous: ADE-208-1332) Rev.2.00 Sep 07 , .2.00 Sep 07, 2005 page 1 of 6 2 S 3 2SK1933 Absolute Maximum Ratings (Ta = 25°C) Item , , VGS = 10 V, RL = 6 IF = 10 A, VGS = 0 IF = 10 A, VGS = 0, diF/dt = 100 A/µs 2SK1933 Main , Drain to Source on State Resistance RDS (on) () 2SK1933 2.5 2.0 ID = 5 A Pulse Test VGS =
Renesas Technology
Original
PRSS0004ZE-A SC-65

2SK1933

Abstract: 2SK1933-E 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1933-E Quantity 360 pcs Shipping , 2SK1933 Silicon N Channel MOS FET REJ03G0984-0300 (Previous: ADE-208-1332) Rev.3.00 Apr 27 , .3.00 Apr 27, 2006 page 1 of 6 2 S 3 2SK1933 Absolute Maximum Ratings (Ta = 25°C) Item , IF = 10 A, VGS = 0 IF = 10 A, VGS = 0, diF/dt = 100 A/µs 2SK1933 Main Characteristics , RDS (on) () 2SK1933 2.5 2.0 ID = 5 A Pulse Test VGS = 10 V 2A 1A 1.5 1.0 0.5 0
Renesas Technology
Original

2SK1933

Abstract: 2SK1933-E 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1933-E Quantity 360 pcs Shipping , . 2SK1933 Silicon N Channel MOS FET REJ03G0984-0300 (Previous: ADE-208-1332) Rev.3.00 Apr 27, 2006 , of 6 2 S 3 2SK1933 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage , , VGS = 0 IF = 10 A, VGS = 0, diF/dt = 100 A/µs 2SK1933 Main Characteristics Maximum Safe , RDS (on) () 2SK1933 2.5 2.0 ID = 5 A Pulse Test VGS = 10 V 2A 1A 1.5 1.0 0.5 0
Renesas Technology
Original

2SK1637

Abstract: 2SK2097 ). 689
-
OCR Scan
2SK1637 2SK2097 2SK series 2SK2203 1018 636 transistor+2sk 2SK213 2SK214 2SK215 2SK216 2SK410 2SK740

BI 370

Abstract: 2SK1878 2SK1933 "iï HS PSW.SW-Reg MOS » E 900 DSS ±30 s 10 » 150 ±10« ±25 250« 720 2 3 10 lm 4.5 7 20 5 , 0 10 1.9 10 5 ton-170ns, toff=455nstyp ID=5A. VGS=10V 149 GDS 2SK1933 2690 375 0 10 1. 6
-
OCR Scan
2SK1852 2SK1853 2SK1859 2SK1862 2SK1863 2SK1867 BI 370 2SK1878 LM9005 LM 0022 2501L BA 5810

2SK1161

Abstract: 2SK1162 100 2 3 2.7 100 225 980 2SK1342 8 1.2 1.6 5.5 160 315 1730 2SK1933 10 150 0.9 1.2 7 170
-
OCR Scan
2SK1671 2SK1401 2SK1401A 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166

HITACHI 2SJ* TO-3

Abstract: btm 330 100 2 3 2.7 100 225 980 2SK1342 8 1.2 1.6 5.5 160 315 1730 2SK1933 10 150 0.9 1.2 7 170
-
OCR Scan
2SK1167 2SK1168 2SK695 HITACHI 2SJ* TO-3 btm 330 2sk1635 2SK1169 2SK1170 2SK1515 2SK1516

2SK1778

Abstract: 2SK1776 100 2 3 2.7 100 225 980 2SK1342 8 1.2 1.6 5.5 160 315 1730 2SK1933 10 150 0.9 1.2 7 170
-
OCR Scan
2SK1776 2SK1778 2sk1518 peh 165 2SK1517 2SK1518 2SK1403 2SK1403A 2SK1968 2SK1573

2SK1778

Abstract: 2sk1299 100 2 3 2.7 100 225 980 2SK1342 8 1.2 1.6 5.5 160 315 1730 2SK1933 10 150 0.9 1.2 7 170
-
OCR Scan
2SK1919 2sk1299 2SK151 Hitachi Scans-001 2SJ236 2SK1339 2SK1340 2SK1341 2SK1773 2SK1934 2SK415

2SK2829

Abstract: Spl 740 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934
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OCR Scan
2SK2829 Spl 740 2sk1 2SK2728 28K13 TTP-80 HAT1030 TSSOP45 HAT1031TT HAT1032TT HAT2031TV
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