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Part : 2SK1403A-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 696 Best Price : $2.68 Price Each : $3.29
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2SK1403A Datasheet

Part Manufacturer Description PDF Type
2SK1403A Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK1403A Hitachi Semiconductor Silicon N Channel MOS FET Original
2SK1403A Renesas Technology Silicon N Channel MOS FET Original
2SK1403A Hitachi Semiconductor Power Transistors Data Book Scan
2SK1403A N/A Catalog Scans - Shortform Datasheet Scan
2SK1403A N/A Scan
2SK1403A N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SK1403A N/A FET Data Book Scan

2SK1403A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SK1403, 2SK1403A Silicon N-Channel MOS FET Application High speed power switching Features , for switching regulator and DC-DC converter Outline 2SK1403, 2SK1403A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1403 2SK1403A Gate to source voltage Drain current Drain , 2 2SK1403, 2SK1403A Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown , : 1. Pulse test 3 2SK1403, 2SK1403A 4 2SK1403, 2SK1403A 5 2SK1403, 2SK1403A 6 Hitachi
Original
K1403A Hitachi DSA002757 K1403
Abstract: 2SK1403,2SK1403A Silicon N-Channel MOS FET HITACHI Application High speed power switching , . Source 410 2SK1403, 2SK1403A Absolute Maximum Ratings (Ta = 25 °C) Item Drain to source voltage 2SK1403 2SK1403A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain , HITACHI 411 2SK1403, 2SK1403A Electrical Characteristics (Ta = 25°C) Item Drain to source , , dip/dt = 100 A/jis t,r HITACHI 412 2SK1403, 2SK1403A Maximum Safe Operation Area O -
OCR Scan
Abstract: 2SK1403, 2SK1403A Silicon N-Channel MOS FET Application High speed power switching Features , ) 3. Source S 2SK1403, 2SK1403A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1403 2SK1403A Gate to source voltage Drain current Drain peak current Body to drain diode , 650 ±30 8 32 8 100 150 ­55 to +150 Unit V V A A A W °C °C 2 2SK1403, 2SK1403A Electrical , Body to drain diode reverse recovery time Note: 1. Pulse test 3 2SK1403, 2SK1403A Power vs Hitachi
Original
Hitachi DSA002779 D-85622
Abstract: 2SK1403, 2SK1403A Silicon N-Channel MOS FET Nov. 1, 1996 Application High speed power , 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK1403, 2SK1403A Absolute Maximum Ratings , V 2SK1403A 650 Gate to source voltage Drain current ±30 Drain peak current I D , TC = 25°C 2SK1403, 2SK1403A Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain , , 2SK1403A Maximum Safe Operation Area Power vs. Temperature Derating ea ar ) (o n DS O is Hitachi
Original
Hitachi DSA0015
Abstract: 5.45 ± 0.5 Ordering Information Part Name 2SK1403A-E Quantity 360 pcs Shipping Container , 2SK1403A Silicon N Channel MOS FET REJ03G0943-0300 Rev.3.00 May 15, 2006 Application High , Rev.3.00 May 15, 2006 page 1 of 6 2 S 3 2SK1403A Absolute Maximum Ratings (Ta = 25 , 7.5 IF = 8 A, VGS = 0 IF = 8 A, VGS = 0, diF/dt = 100 A/us 2SK1403A Main Characteristics , PW 80 10 50 30 120 ) 2SK1403A 0.05 0 50 100 1 150 3 10 30 Renesas Technology
Original
PRSS0004ZE-A SC-65
Abstract: 2SK1403, 2SK1403A Silicon N-Channel MOS FET Application High speed power switching Features , . Gate 2. Drain (Flange) 3. Source 2SK1403, 2SK1403A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol 2SK1403 Ratings Unit VDSS 600 V 2SK1403A 650 , , 2SK1403A Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source K1403 , I F = 8 A, VGS = 0, diF/dt = 100 A/us Note: 1. Pulse test 3 2SK1403, 2SK1403A Power Hitachi Semiconductor
Original
DSA003778
Abstract: 2SK1403, 2SK1403A Silicon N-Channel MOS FET ADE-208-1283 (Z) 1st. Edition Mar. 2001 , Outline TO-3P D 1 G 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK1403, 2SK1403A , VDSS 600 V 2SK1403A 650 Gate to source voltage VGSS Drain current ±30 ID , 1% 2. Value at TC = 25°C 2 2SK1403, 2SK1403A Electrical Characteristics (Ta = 25°C) Item , 2SK1403, 2SK1403A Power vs. Temperature Derating Maximum Safe Operation Area ea ar ) (o n DS Hitachi Semiconductor
Original
DSA003639 k140
Abstract: products contained therein. 2SK1403, 2SK1403A Silicon N-Channel MOS FET ADE-208-1283 (Z) 1st , . Source 2SK1403, 2SK1403A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol 2SK1403 Ratings Unit VDSS 600 V 2SK1403A 650 Gate to source voltage , Notes: 1. PW 10 us, duty cycle 1% 2. Value at TC = 25°C 2 2SK1403, 2SK1403A Electrical , A/us Note: 1. Pulse test 3 2SK1403, 2SK1403A Power vs. Temperature Derating Maximum Hitachi Semiconductor
Original
Abstract: 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1403A-E , 2SK1403A Silicon N Channel MOS FET REJ03G0943-0200 (Previous: ADE-208-1283) Rev.2.00 Sep 07 , (Flange) 3. Source G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 S 3 2SK1403A Absolute , , VGS = 0, diF/dt = 100 A/us 2SK1403A Main Characteristics Power vs. Temperature Derating , 3 = 40 10 PW 80 10 50 30 120 25 °C Ta = 25°C 0.1 ) 2SK1403A Renesas Technology
Original
Abstract: 5.45 ± 0.5 Ordering Information Part Name 2SK1403A-E Quantity 360 pcs Shipping Container , . 2SK1403A Silicon N Channel MOS FET REJ03G0943-0300 Rev.3.00 May 15, 2006 Application High speed , Rev.3.00 May 15, 2006 page 1 of 6 2 S 3 2SK1403A Absolute Maximum Ratings (Ta = 25 , 7.5 IF = 8 A, VGS = 0 IF = 8 A, VGS = 0, diF/dt = 100 A/us 2SK1403A Main Characteristics , PW 80 10 50 30 120 ) 2SK1403A 0.05 0 50 100 1 150 3 10 30 Renesas Technology
Original
Abstract: 2SK1403, 2SK1403A Silicon N-Channel MOS FET HITACHI Nov. 1, 1996 Application High speed , Outline 2SK1403, 2SK1403A Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Drain to source voltage 2SK1403 Ratings Unit V dss 600 V 2SK1403A 650 Gate to source voltage , , 2SK1403A Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test , 0, S d iF = 100 A/|iS /dt Note: 1. Pulse test 3 HITACHI 2SK1403, 2SK1403A Power -
OCR Scan
Abstract: Ordering Information Part Name 2SK1403A-E Quantity 360 pcs Shipping Container Box (Tube) Note , developed or manufactured by or for Renesas Electronics. 2SK1403A Silicon N Channel MOS FET REJ03G0943 , 3 2SK1403A Absolute Maximum Ratings (Ta = 25°C) Item Symbol Unit VDSS VGSS ID , , VGS = 10 V, RL = 7.5 â"¦ IF = 8 A, VGS = 0 IF = 8 A, VGS = 0, diF/dt = 100 A/Âus 2SK1403A , 25°C ) 2SK1403A 1 150 25 °C e) = ls C 0.3 pu Drain Current ID (A Renesas Technology
Original
Abstract: 0.2 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1403A-E Quantity 360 pcs Box , Renesas Electronics. 2SK1403A Silicon N Channel MOS FET REJ03G0943-0300 Rev.3.00 May 15, 2006 , 2 Rev.3.00 May 15, 2006 page 1 of 6 2SK1403A Absolute Maximum Ratings (Ta = 25°C) Item , A, VGS = 0, diF/dt = 100 A/us Rev.3.00 May 15, 2006 page 2 of 6 2SK1403A Main , °C 2SK1403A 1 3 10 30 100 ) 0 50 100 150 300 1,000 e) Case Temperature TC (°C Renesas Technology
Original
Abstract: - * Pulse Test See characteristic curves of 2SK1403A 2SK2328 Power vs. Temperature Hitachi Semiconductor
Original
Abstract: d(on) tr t d(off) tf VDF t rr See characteristic curves of 2SK1403A 2 2SK2328 3 Hitachi
Original
Hitachi DSA00279
Abstract: 345 3050 2SK1518 500 0.22 0.27 2SK1403 600 8 100 0.9 1.3 6.5 65 150 1180 2SK1403A -
OCR Scan
2SK1671 2SK1401 2SK1401A 2SK1161 2SK1162 2SK1163 2SK1168 2SK1167
Abstract: SW-Reg. DDC MOS N E 600 DSS ±30 s 8 D 100 ±10/1 ±25 250« 500 2 3 10 Im 4 6. 5 10 4 2SK1403A HS , =30V 149 GDS 2SK1403 1180 50 0 10 1.4 10 4 ton=65ns. toff=150nstyp ID=4A, VDD=30V 149 GDS 2SK1403A -
OCR Scan
2SK1379 2SK1380 2SK1381 2SK1382 2SK1383 2SK1384 IM 337 2SK1388 IM617
Abstract: characteristic curves of 2SK1403A 2 2SK2328 Power vs. Temperature Derating Maximum Safe Operation -
OCR Scan
Abstract: 345 3050 2SK1518 500 0.22 0.27 2SK1403 600 8 100 0.9 1.3 6.5 65 150 1180 2SK1403A -
OCR Scan
2SK1164 2SK1165 2SK1166 2SK695 btm 330 2sk1635 2SK1169 2SK1170 2SK1515
Abstract: 345 3050 2SK1518 500 0.22 0.27 2SK1403 600 8 100 0.9 1.3 6.5 65 150 1180 2SK1403A -
OCR Scan
2SK1776 2SK1778 HITACHI 2SJ* TO-3 peh 165 2SK1516 2SK1517 2SK1968 2SK1573 2SK1339 2SK1340
Abstract: HITACHI 2SK1403,2SK1403A SILICON N-GHANNEL MOS FET HIGH SPEED POWER SWITCHING m FEATURES â'¢ Low On-Resistance â'¢ High Speed Switching â'¢ Low Drive Current â'¢ No Secondary Breakdown â'¢ Suitable for Switching Regulator and DC-DC Converter O 1.Gaie 2. Drain (FlArtfie) 3. Source (Dimensions in mm) 3.0 rrju. > â"¢ «-Ï (TO-3P) IABSOLUTE MAXIMUM RATINGS (Ta = 25t:) 1 PWiî tO/u s. duty cycle £ 1% * Value al Te = 25tü Item Symbol Kl 403 K1403A Unit Drain-Souree Voliate V OST 600 -
OCR Scan
mml 600 KI403A
Abstract: - * Pulse Test See characteristic curves of 2SK1403A 2SK2328 Power vs. Temperature -
OCR Scan
Abstract: d(on) tr t d(off) tf VDF t rr See characteristic curves of 2SK1403A 2 2SK2328 3 -
OCR Scan
2SK1919 2sk1299 Hitachi Scans-001 2SK151 2SJ236 2SK1341 2SK1342 2SK1933 2SK1773 2SK1934 2SK415
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