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Part : 2SK1365 Supplier : Toshiba Manufacturer : Bristol Electronics Stock : 3 Best Price : $5.04 Price Each : $5.04
Part : 2SK1365F Supplier : Toshiba Manufacturer : ComSIT Stock : 1,500 Best Price : - Price Each : -
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Part : 2SK1365(F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 388 Best Price : $28.90 Price Each : $28.90
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2SK1365 Datasheet

Part Manufacturer Description PDF Type
2SK1365 Toshiba TRANS MOSFET N-CH 1000V 7A 3(2-16F1B) Original
2SK1365 Toshiba Power MOSFETs Cross Reference Guide Original
2SK1365 Toshiba N-Channel MOSFET Original
2SK1365 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original
2SK1365 Toshiba Original
2SK1365 Toshiba Silicon N channel field effect transistor for high speed, high current switching applications, switching power supply applications Scan
2SK1365 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (pi-MOSII.5) Scan
2SK1365(F) Toshiba 2SK1365 - MOSFET N-CH 1KV 7A 2-16F1B Original

2SK1365

Catalog Datasheet MFG & Type PDF Document Tags

k1365

Abstract: 2SK1365 2SK1365 .5 NMOS (-MOS ) 2SK1365 : mm : RDS ( ON ) = 1.5 () : |Yfs| = 4.0S () : IDSS = 300A () (VDS = 800 V) : Vth = 1.53.5 V (VDS = 10 VID = 1 mA) (Ta = 25 , 2SK1365 (Ta = 25°C) IGSS , 2006-11-09 2SK1365 3 2006-11-09 2SK1365 4 2006-11-09 2SK1365 5 2006-11-09 2SK1365 20070701-JA · · " " · · · RoHS RoHS · 6
Toshiba
Original
k1365 416W 2-16F1B VDD400 K1365

k1365

Abstract: 2SK1365 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1365 Switching Power Supply Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.5 (typ , device. Please handle with caution. 1 2004-07-06 2SK1365 Electrical Characteristics (Ta = 25 , lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-06 2SK1365 3 2004-07-06 2SK1365 4 2004-07-06 2SK1365 5 2004-07-06 2SK1365 RESTRICTIONS ON PRODUCT USE
Toshiba
Original

k1365

Abstract: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1365 Switching Power Supply Applications z Low drain-source ON resistance z High forward transfer admittance , 2006-11-09 2SK1365 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain , No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SK1365 3 2006-11-09 2SK1365 4 2006-11-09 2SK1365 5 2006-11-09 2SK1365
Toshiba
Original

K1365

Abstract: K136 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1365 Switching Power Supply Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.5 (typ , caution. 1 2006-11-09 2SK1365 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , lead (Pb)-free finish. 2 2006-11-09 2SK1365 3 2006-11-09 2SK1365 4 2006-11-09 2SK1365 5 2006-11-09 2SK1365 RESTRICTIONS ON PRODUCT USE 20070701-EN · The information
Toshiba
Original
K136

K1365

Abstract: 2SK1365 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1365 Switching Power Supply Applications Unit: mm l Low drain-source ON resistance : RDS (ON) = 1.5 , is an electrostatic sensitive device. Please handle with caution. 1 2002-09-02 2SK1365 , 2002-09-02 2SK1365 3 2002-09-02 2SK1365 4 2002-09-02 2SK1365 5 2002-09-02 2SK1365 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the
Toshiba
Original

diode U1J

Abstract: 2SK1365 TOSHIBA 2SK1365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSII5) 2SK1365 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING POWER SUPPLY APPLICATIONS â'¢ Low , 2SK1365 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. typ. MAX , Christian Era) 1998-07-24 2/5 TOSHIBA 2SK1365 id - VDS id - VDS COMMON SOURCE Tc = 25°C 15 y Xà , 2SK1365 RDS(ON) - Te IDR - VDS £ °o M w o g iD« O W COMMON SOURCE vGS=iov
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OCR Scan
diode U1J 961001EAA2

k1365

Abstract: 2SK1365 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1365 Switching Power Supply Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.5 (typ , device. Please handle with caution. 1 2009-09-29 2SK1365 Electrical Characteristics (Ta = 25 , 2009-09-29 2SK1365 3 2009-09-29 2SK1365 4 2009-09-29 2SK1365 5 2009-09-29 2SK1365 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates
Toshiba
Original
Abstract: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR 2SK1365 SILICON N CHANNEL MOS TYPE DATA TO SH IBA TECHNICAL ( tt- M O S II .5) (2SK1365) HIGH SPEED, HIGH CURRENT SWITCHING , - 7 - 2 8 _ T O S H IB A C O RPO RA TIO N SEM ICONDUCTOR TO SH IBA 2SK1365 DATA TECHNICAL (2SK1365) ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Gate Leakage , 2SK1365 - 2* 1 9 9 4 -7 -2 8 T O S H IB A C O RPO RA TIO N -
OCR Scan
VDD-400V

k1365

Abstract: k136 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1365 Switching Power Supply Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.5 (typ , electrostatic sensitive device. Please handle with caution. 1 2002-09-02 2SK1365 Electrical , (starting from alphabet A) Year (last number of the christian era) 2 2002-09-02 2SK1365 3 2002-09-02 2SK1365 4 2002-09-02 2SK1365 5 2002-09-02 2SK1365 RESTRICTIONS ON
Toshiba
Original

k1365

Abstract: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII ) .5 2SK1365 Switching Power Supply Applications Low drain-source ON resistance High forward transfer admittance : RDS , an electrostatic sensitive device. Please handle with caution. 1 2002-06-05 2SK1365 , (last number of the christian era) 2 2002-06-05 2SK1365 3 2002-06-05 2SK1365 4 2002-06-05 2SK1365 5 2002-06-05 2SK1365 RESTRICTIONS ON PRODUCT USE 000707EAA ·
Toshiba
Original
Abstract: TOSHIBA 2SK1365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt- M O S II5 , ch a n g e w it h o u t n otice. 1998 07-24 - 1/5 TOSHIBA 2SK1365 ELECTRICAL , Era) - TOSHIBA 2SK1365 id - vos id - vos < < a a ÉH ÉH z , TOSHIBA 2SK1365 IDR - Vd S Rd s (ON) - Te H U z < H t/3 os Q E h z w tí tà , ) CASE TEMPERATURE Te (°C) 1998 07-24 - 4/5 TOSHIBA 2SK1365 rth â'" tw PULSE WIDTH -
OCR Scan

2SK1365

Abstract: TOSHIBA Discrete Semiconductors 2SK1365 Field Effect Transistor Unit in mm Silicon N Channel MOS Type (-MOS II.5) High Speed, High Current Switching Applications Features · Low Drain-Source ON Resistance - RDS(ON) = 1.5 (Typ.) · High Forward Transfer Admittance - Yfs = 4.0S (Typ.) · Low Leakage Current - IDSS = -300µA (Max.) @ VDS = 800V · Enhancement-Mode - Vth = 1.5 ~ 3.5V @ VDS , caution. TOSHIBA CORPORATION 1/2 2SK1365 Electrical Characteristics (Ta = 25°C) CHARACTERISTIC
Toshiba
Original

k1365

Abstract: 2SK1365 TOSHIBA 2SK1365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSII.5) 2SK1365 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING POWER SUPPLY APPLICATIONS â'¢ Low , /5 TOSHIBA 2SK1365 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION , Christian Era) 1997-12-11 2/5 TOSHIBA 2SK1365 ID - vds id - vds COMMON SOURCE Tc = 25°C is y , 2SK1365 RDS(ON) - Te IDR - VDS °o M w o o W COMMON SOURCE vGS=iov
-
OCR Scan
toshiba l40

k1365

Abstract: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-M OSII .5) 2SK1365 2 , contained herein is subject to change witnout notice. 1997 12-11 1/5 - TOSHIBA 2SK1365 , 2SK1365 id - vds id - vds DRAIN-SOURCE VOLTAGE V pg (V) DRAIN-SOURCE VOLTAGE VDS , (A) 1997 12-11 3/5 - TOSHIBA 2SK1365 Rds (ON) - Te iDR - vds o £ s U 3 l , TEMPERATURE Tc CC) 1997 12-11 4/5 - TOSHIBA 2SK1365 rth -W PULSE WIDTH tw (s) 100 SAFE
-
OCR Scan
Abstract: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-MOSII .5) 2SK1365 , # 1997 12-11 - 1/5 TOSHIBA 2SK1365 ELECTRICAL CHARACTERISTICS (Ta = 25 , ) 1997 12-11 - 2/5 TOSHIBA 2SK1365 id - vds id - vds < Q H £ Di Di , (V) 24 1997 12-11 - 3/5 TOSHIBA 2SK1365 R d s (o n ) - Te w o IDR - VDS c¿ Q , O z s Q o w a Pi 1997 12-11 - 4/5 TOSHIBA 2SK1365 rth - tw PULSE WIDTH tw (s -
OCR Scan

800v nmos

Abstract: TOSHIBA 2SK1365 Field Effect Transistor Silicon N Channel MOS Type (n-MOS 11.5) High Speed, High Current Switching Applications Features · Low Drain-Source ON Resistance - Rds(on ) = 1 (Typ.) · High Forward Transfer Admittance - Yfs' = 4. OS (Typ.) · Low Leakage Current - IDSS = -300|jA (Max.) @ VDS = 800V · Enhancement-Mode - Vth = 1.5 - 3.5V @ VDS = -10V, lD = 1mA Unit in mm Absolute , AMERICA ELECTRONIC COMPONENTS, INC. 265 2SK1365 Electrical Characteristics (Ta = 25 C
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OCR Scan
800v nmos

K1118

Abstract: k1118 transistor ] 2SK1363(1.4] A 2SK2078[1.2] A 2SK1358(1.4] A , 2SK1365(1.8] 2S K 1120(1.8] 2SK2038[2.2] 2SK1362(2.5] · A
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OCR Scan
2SK1723 2SK1603 K1118 k1118 transistor MOSFET transistor k1118 transistor k1118 T0-220 T0-220N 2SK1488 2SK1865SM 2SK1769

2SK2056

Abstract: 2SK1603 2SK1358 2SK1119 2SK1930 2SK1359 2SK1365 2SK1120 2SK1489 < 0 (A) 5 2.8 3 3 4 5 5 5 7 7 9 8.5 2.5 3 5 5 5 5
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OCR Scan
2SK2056 2SK2222 2SK1601 2SK1692 2sk2039 2sk2077 2sk231 2SK2274 2SK1602 2SK1600 2SK1858 2SK2089

transistor 2SK1603

Abstract: 2SK1603 2SK2038[2.2] A 2SK1362[2.5] · A 2SK1119[3.8] 2SK1359[3.8] 2SK1365[1.8] 2SK1120[1.8] A 9 TO
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OCR Scan
2SK1118 transistor 2SK1603 transistor 2sk1723 2sk16 MOSFET 2SK1358 Transistor Guide toshiba transistor smd code 2SK1531 2SK1745 2SK2057 2SK1544 2SK1805

2SK2030

Abstract: 2SJ239 MOSFET Characteristic Chart M axim u m R ating Type No. P ackag e Id |Am ps| V oss R d s (ON) TYP. [Ohm s| M AX. lO hm sI V qs [Volts] Id [Amps] Vtn (Volts] | ID - 1 mA] A p plicatio n [Volts] Pd [W atts] 2SJ147 2SJ201-Y 2SJ238(TE12L) 2SJ239 2SJ239(LB) 2SJ240 2SJ241(SM) 2SJ312(SM) 2SK1078(TE12L) 2SK1079(TE12L) 2SK1112(LB,STA1) 2SK1113 2SK1118 2SK1119 2SK1120 2SK1345 2SK1346 2SK1348 2SK1356 2SK1358 2SK1359 2SK1362 2SK1363 2SK1365 2SK1380 2SK1488 2SK1489 2SK1530-Y 2SK1531 2SK1544 2SK1641 2SK1653
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OCR Scan
2SK2030 2SJ201Y 2sk1 2SK2200TP 2SK1717 2SK1719 2SK1767 2SK1768 2SK1792 2SK1865

2n 3904 411

Abstract: 2SB 407 ] 2SK1363(1.4] A 2SK2078[1.2] A 2SK1358(1.4] A , 2SK1365(1.8] 2S K 1120(1.8] 2SK2038[2.2] 2SK1362(2.5] · A
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OCR Scan
TA4100F 2n 3904 411 2SB 407 2SK176 Toshiba 2SC3281 K 1113 TOSHIBA 2N 1SV237 1SV239 1SV257 2N4401 2N5401 TA4003F
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