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Part : 2SK1300 Supplier : Hitachi Manufacturer : Bristol Electronics Stock : 1,400 Best Price : - Price Each : -
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2SK1300 Datasheet

Part Manufacturer Description PDF Type
2SK1300 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK1300 Hitachi Semiconductor Silicon N Channel MOS FET Original
2SK1300 Hitachi Semiconductor Mosfet Guide Original
2SK1300 Renesas Technology Silicon N Channel MOS FET Original
2SK1300 Renesas Technology Silicon N-Channel MOS FET Original
2SK1300 Hitachi Semiconductor Power Transistors Data Book Scan
2SK1300 N/A Shortform Datasheet & Cross References Data Scan
2SK1300 N/A Catalog Scans - Shortform Datasheet Scan
2SK1300 N/A FET Data Book Scan
2SK1300-E Renesas Technology Silicon N Channel MOS FET Original

2SK1300

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SK1300 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features , Outline TO-220AB 1. Gate 2. Drain (Flange) 3. Source S 268 2SK1300 Absolute Maximum Ratings , HITACHI 269 2SK1300 Electrical Characteristics (Ta = 25 °C) Item Drain to source breakdown voltage , t, - - ns HITACHI 270 2SK1300 Power vs. Temperature Derating Maximum Safe , Source Voltage VGS (V) HITACHI 271 2SK1300 Drain to Source Saturation Voltage vs. Gate to Source -
OCR Scan

Hitachi DSA00279

Abstract: 2SK1300 Silicon N-Channel MOS FET Application High speed power switching Features · · · · , -220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1300 Absolute Maximum Ratings , Tstg 2 1 Ratings 100 ±20 10 40 10 40 150 ­55 to +150 Unit V V A A A W °C °C 2 2SK1300 , resistance VGS(off) RDS(on) 3 2SK1300 Power vs. Temperature Derating 60 Channel Dissipation Pch (W , ) 4 2SK1300 Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.5 Drain to Source
Hitachi
Original
Hitachi DSA00279 D-85622

2SK1300

Abstract: products contained therein. 2SK1300 Silicon N-Channel MOS FET ADE-208-1258 (Z) 1st. Edition Mar , . Gate 2. Drain (Flange) 3. Source G S 2SK1300 Absolute Maximum Ratings (Ta = 25°C) Item , °C Notes: 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2 2SK1300 Electrical , I F = 10 A, VGS = 0, diF/dt = 50 A/µs Note: 1. Pulse test 3 2SK1300 Maximum Safe , TC = 75°C 25°C ­25°C 3 1 2 4 Gate to Source Voltage VGS (V) 5 2SK1300 Drain to
Hitachi Semiconductor
Original

Hitachi DSA00279

Abstract: 2SK1300 Silicon N-Channel MOS FET Application High speed power switching Features · · · · · Low on-resistance High speed switching Low drive current 4 V gate drive device · Can be driven , Ratings 100 ±20 Unit V V 2SK1300 Drain current Drain peak current Body to drain diode reverse drain , 4.5 - - - - - - - - - 2 2SK1300 _ 2SK1300 4 2SK1300 _ 2SK1300 6 2SK1300 When using this document, keep the following in mind: 1. This document may, wholly or
Hitachi
Original
Abstract: 2SK1300 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power , ihH: 1- 1 23 1. Gate \] 2. Drain (Flange) 3. Source os 2SK1300 Absolute Maximum , 2 2SK1300 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Drain to source , = 50 A/|¿s /dt Note = 1 MHz 1. Pulse test HITACHI 3 2SK1300 Maximum Safe , lD (A) 20 50 2SK1300 Static Drain to Source on State Resistance vs. Temperature Forward -
OCR Scan

2SK1300

Abstract: DSA003638 2SK1300 Silicon N-Channel MOS FET ADE-208-1258 (Z) 1st. Edition Mar. 2001 Application High , (Flange) 3. Source G S 2SK1300 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings , , duty cycle 1% 2. Value at TC = 25°C 2 2SK1300 Electrical Characteristics (Ta = 25°C) Item , Note: 1. Pulse test 3 2SK1300 Maximum Safe Operation Area Power vs. Temperature Derating , Voltage VGS (V) 5 2SK1300 Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse
Hitachi Semiconductor
Original
DSA003638

2SK1300

Abstract: 2SK1300 Silicon N-Channel MOS FET Application TO­220AB High speed power switching , - * PW 10 µs, duty cycle 1 % * Value at TC = 25 °C 2SK1300 Table 2 Electrical , - * Pulse Test 2SK1300 Maximum Safe Operation Area Power vs. Temperature Derating 100 , 2SK1300 Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 10 A 2.0 1.5 , °C 75°C 2 1 0.5 0.1 0.2 5 0.5 2 1 Drain Current ID (A) 10 2SK1300 Body to Drain
-
Original
Abstract: 2SK1300 Silicon N-Channel MOS FET Application TOâ'"220AB High speed power switching , â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'" * PW ≤ 10 µs, duty cycle ≤ 1 % * Value at TC = 25 °C 2SK1300 Table 2 Electrical , â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'"â'" * Pulse Test 2SK1300 Maximum Safe Operation Area Power vs. Temperature Derating 100 , ) 5 2SK1300 Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 10 A , ) 10 2SK1300 Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Hitachi Semiconductor
Original

Hitachi DSA002713

Abstract: 2SK1300 Silicon N-Channel MOS FET November 1996 Application High speed power switching , Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1300 Absolute , 2SK1300 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source , = 5 A, VDS = 10 V * 1 3 2SK1300 Power vs. Temperature Derating 60 Channel Dissipation Pch , 2 5 10 20 Drain Current ID (A) 50 4 2SK1300 Static Drain to Source on State Resistance vs
Hitachi
Original
Hitachi DSA002713

Hitachi DSA003779

Abstract: DSA003779 2SK1300 Silicon N-Channel MOS FET Application High speed power switching Features · · · , Outline TO-220AB D 1 2 3 1. Gate 2. Drain (Flange) 3. Source G S 2SK1300 , 2SK1300 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test , 220 - ns I F = 10 A, VGS = 0, diF/dt = 50 A/µs Note: 1. Pulse test 3 2SK1300 , 2 0 TC = 75°C 25°C ­25°C 3 1 2 4 Gate to Source Voltage VGS (V) 5 2SK1300
Hitachi Semiconductor
Original
Hitachi DSA003779 DSA003779

2SK1300

Abstract: 2SK1300-E Name 2SK1300-E Quantity 500 pcs Shipping Container Box (Sack) Note: For some grades , 2SK1300 Silicon N Channel MOS FET REJ03G0919-0200 (Previous: ADE-208-1258) Rev.2.00 Sep 07 , . Drain (Flange) 3. Source S 3 2SK1300 Absolute Maximum Ratings (Ta = 25°C) Item Drain to , , VGS = 0, diF/dt = 50 A/µs 2SK1300 Main Characteristics Power vs. Temperature Derating , Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) () 2SK1300
Renesas Technology
Original
PRSS0004AC-A
Abstract: ± 0.1 2.54 ± 0.5 Ordering Information Part Name 2SK1300-E Quantity 500 pcs Shipping , developed or manufactured by or for Renesas Electronics. 2SK1300 Silicon N Channel MOS FET REJ03G0919 , .2.00 Sep 07, 2005 page 1 of 6 2 1. Gate 2. Drain (Flange) 3. Source S 3 2SK1300 Absolute , /dt = 50 A/µs 2SK1300 Main Characteristics Power vs. Temperature Derating Maximum Safe , ) (â"¦) 2SK1300 0.5 ID = 10 A Pulse Test 5A 2A 0.4 10 A 5A 0.3 VGS = 4 V Renesas Technology
Original

6AM12

Abstract: SP12TA 2SJI73 4AK20 100 5 28 0.25 0.35 0.2 0.25 5 40 250 2SK1300 (A) 4AK21 ±20 8 28 0.09 0.125 0.07 0.09 , 115 410 2SJ173 (A) 4AK23 100 ±20 5 32 0.25 0.4 0.2 0.3 5.5 37 245 2SK1300 (E) 4AM15 200 ±20 4 32
-
OCR Scan
4AK17 2SK972 4AK15 2SK971 4AK16 4AK18 6AM12 SP12TA 2sk970 SP12 PACKAGE TYPE 6 2SK970

2SK1778

Abstract: 2SK970 2SJI73 4AK20 100 5 28 0.25 0.35 0.2 0.25 5 40 250 2SK1300 (A) 4AK21 ±20 8 28 0.09 0.125 0.07 0.09 , 115 410 2SJ173 (A) 4AK23 100 ±20 5 32 0.25 0.4 0.2 0.3 5.5 37 245 2SK1300 (E) 4AM15 200 ±20 4 32 , 0.028 27 145 615 2250 2SK1300 10 40 0.25 0.35 0.2 0.25 7 65 240 525 2SK1301 100 15 50 0.13 0.18
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OCR Scan
2SK973 4AK25 2SK975 4AM13 2SK1778 SP-10 2SJ182
Abstract: , solenoid driver and lamp driver â'¢ Discrete packaged devices of same die: 2SK1300, 2SK1305 4AK20 , adm ittance 1. Pulse Test See characteristic curves of 2SK1300 HITACHI 3 4AK20 Maximum -
OCR Scan

2SK1300

Abstract: 2SK1300-E Name 2SK1300-E Quantity 500 pcs Shipping Container Box (Sack) Note: For some grades , . 2SK1300 Silicon N Channel MOS FET REJ03G0919-0200 (Previous: ADE-208-1258) Rev.2.00 Sep 07, 2005 , ) 3. Source S 3 2SK1300 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source , , VGS = 0, diF/dt = 50 A/µs 2SK1300 Main Characteristics Power vs. Temperature Derating , Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) () 2SK1300
Renesas Technology
Original

2SK1778

Abstract: 2sj177 2SJI73 4AK20 100 5 28 0.25 0.35 0.2 0.25 5 40 250 2SK1300 (A) 4AK21 ±20 8 28 0.09 0.125 0.07 0.09 , 115 410 2SJ173 (A) 4AK23 100 ±20 5 32 0.25 0.4 0.2 0.3 5.5 37 245 2SK1300 (E) 4AM15 200 ±20 4 32 , 615 2250 2SK1300 10 40 0.25 0.35 0.2 0.25 7 65 240 525 2SK1301 100 15 50 0.13 0.18 0.1 0.13 U
-
OCR Scan
4AM12 4AK22 2sj177 2sk1299 transistor 2sk1304 2SK1919 2SJ172 2SK1302 2SK1254 SP-12

N25A

Abstract: 2SK1300 Devices of Same Die: 2SK1300, 2SK1305 2.54 J-82 -4 0.SS 6 123H567B9I0 (SP-10) _/ DimtnMOft , 2SK1300 MAXIMUM CHANNEL DISSIPATION CURVE MAXIMUM CHANNEL DISSIPATION CURVE Conditimi Ctunn 1
-
OCR Scan
N25A opel 4AK20-

Hitachi DSA002751

Abstract: die: 2SK1300, 2SK1305 4AK20 Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 , cutoff voltage Static drain to source on state RDS(on) resistance See characteristic curves of 2SK1300
Hitachi
Original
Hitachi DSA002751

Hitachi DSA00397

Abstract: Hitachi motor driver : 2SK1300, 2SK1305 4AK20 Outline SP-10 3 D 5 D 4 G 7 D 12 34 56 78 9 10 9 D , curves of 2SK1300 3 4AK20 Maximum Channel Dissipation Curve Maximum Channel Dissipation Curve
Hitachi Semiconductor
Original
Hitachi DSA00397 Hitachi motor driver
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