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Part : 2SK1161-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 114 Best Price : $3.02 Price Each : $3.02
Part : 2SK1161(E) Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 50 Best Price : $18.10 Price Each : $18.10
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2SK1161 Datasheet

Part Manufacturer Description PDF Type
2SK1161 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK1161 Hitachi Semiconductor Silicon N Channel MOS FET Original
2SK1161 Hitachi Semiconductor Mosfet Guide Original
2SK1161 Renesas Technology Silicon N Channel MOS FET Original
2SK1161 Renesas Technology Silicon N-Channel MOS FET Original
2SK1161 Hitachi Semiconductor Power Transistors Data Book Scan
2SK1161 N/A Shortform Datasheet & Cross References Data Scan
2SK1161 N/A Catalog Scans - Shortform Datasheet Scan
2SK1161 N/A Catalog Scans - Shortform Datasheet Scan
2SK1161 N/A FET Data Book Scan

2SK1161

Catalog Datasheet MFG & Type PDF Document Tags

2SK1157

Abstract: 2SK1158 2SK1161, 2SK1162 Silicon N-Channel MOS FET ADE-208-1250 (Z) 1st. Edition Mar. 2001 , Outline TO-3P D 1 G 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK1161, 2SK1162 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol 2SK1161 Ratings Unit , 1% 2. Value at TC = 25°C 2 2SK1161, 2SK1162 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1161 V(BR)DSS 450 breakdown voltage 2SK1162 Typ Max
Hitachi Semiconductor
Original
2SK1157 2SK1158 DSA003638 D-85622

2SK1162

Abstract: Hitachi DSA00115 2SK1161, 2SK1162 Silicon N-Channel MOS FET November 1996 Application High speed power , 2 3 1. Gate S 2. Drain (Flange) 3. Source 2SK1161, 2SK1162 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SK1161 Ratings Unit VDSS 450 , TC = 25°C 2SK1161, 2SK1162 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage 2SK1161 V(BR)DSS 450 2SK1162 Typ Max Unit Test
Hitachi
Original
Hitachi DSA00115
Abstract: 2SK1161, 2SK1162 Silicon N-Channel MOS FET Application TO­3P High speed power switching , . Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1161 Symbol , , duty cycle 1 % * Value at TC = 25 °C 2SK1161, 2SK1162 Table 2 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SK1161 Symbol V(BR)DSS Min 450 Typ - Max - Unit V , drain current 2SK1161 V(BR)GSS IGSS IDSS - 500 ±30 - - V IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS Hitachi Semiconductor
Original

2SK1161

Abstract: 2SK1162 2SK1161, 2SK1162 Silicon N-Channel MOS FET Application High speed power switching Features , . Gate 2. Drain (Flange) 3. Source 2SK1161, 2SK1162 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol 2SK1161 Ratings Unit VDSS 450 V 2SK1162 500 , 2SK1161, 2SK1162 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1161 , = ±25 V, VDS = 0 Zero gate voltage 2SK1161 I DSS - - 250 µA VDS = 360 V, VGS
Hitachi Semiconductor
Original
DSA003769

2SK1162

Abstract: 2SK1161,2SK1162 Silicon N-Channel MOS FET HITACHI Application High speed power switching , 218 2SK1161, 2SK1162 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1161 , * O(pulse) *1 30 10 100 150 -5 5 t o +150 l[:>R Pch*2 Tch Tstg HITACHI 219 2SK1161,2SK1162 Electrical Characteristics Item Drain to source breakdown voltage 2SK1161 2SK1162 V(BR)C.SS (T , voltage drain current 2SK1161 2SK1162 - - - - ±10 250 V lG= ±100(iA, V ds = 0 VG S = ±25 V
-
OCR Scan

2SK1161-E

Abstract: 2SK1161 Ordering Information Part Name 2SK1161-E 2SK1162-E Quantity 360 pcs 360 pcs Shipping Container , 2SK1161, 2SK1162 Silicon N Channel MOS FET REJ03G0912-0200 (Previous: ADE-208-1250) Rev , 2SK1161, 2SK1162 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS , Storage temperature Tch Tstg 150 ­55 to +150 °C °C 2SK1161 2SK1162 Gate to source , 2SK1161 2SK1162 V(BR)DSS 450 500 - - V ID = 10 mA, VGS = 0 Gate to source
Renesas Technology
Original
PRSS0004ZE-A SC-65

2SK1157

Abstract: 2SK1158 products contained therein. 2SK1161, 2SK1162 Silicon N-Channel MOS FET ADE-208-1250 (Z) 1st , . Source 2SK1161, 2SK1162 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol 2SK1161 Ratings Unit VDSS 450 V 2SK1162 500 Gate to source voltage Drain , Notes: 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2 2SK1161, 2SK1162 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1161 V(BR)DSS 450 breakdown voltage
Hitachi Semiconductor
Original
Abstract: 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1161-E 2SK1162 , developed or manufactured by or for Renesas Electronics. 2SK1161, 2SK1162 Silicon N Channel MOS FET , , 2005 page 1 of 6 2 S 3 2SK1161, 2SK1162 Absolute Maximum Ratings (Ta = 25°C) Item , ° C ° C 2SK1161 2SK1162 Gate to source voltage Drain current Drain peak current ID 1 , = 25°C) Item Symbol Min Typ Max Unit 2SK1161 2SK1162 V(BR)DSS 450 500 Renesas Technology
Original

2SK1161

Abstract: 2SK1161-E Ordering Information Part Name 2SK1161-E 2SK1162-E Quantity 360 pcs 360 pcs Shipping Container , . 2SK1161, 2SK1162 Silicon N Channel MOS FET REJ03G0912-0200 (Previous: ADE-208-1250) Rev.2.00 Sep 07 , (Flange) 3. Source G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 S 3 2SK1161, 2SK1162 , temperature Tch Tstg 150 ­55 to +150 °C °C 2SK1161 2SK1162 Gate to source voltage Drain , °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit 2SK1161 2SK1162 V
Renesas Technology
Original
Abstract: 2SK1161, 2SK1162 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features â'¢ Low on-resistance â'¢ High speed switching â'¢ Low drive , Outline 3. Source 2SK1161, 2SK1162 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Unit , 2SK1161, 2SK1162 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Drain to source , 2SK1161, 2SK1162 Maximum Safe O peration A rea Pow er vs. Tem perature Derating 1 3 10 30 -
OCR Scan

HITACHI 2SJ* TO-3

Abstract: btm 330 2SK1161 450 10 0.6 0.8 7 75 135 1050 2SK1162 500 0.7 0.9 2SK1163 450 11 100 0.55 0.7 8 , 2SK1626 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1206 2SK1225 2SK1315 2SK1316 2SK1328 2SK1163 2SK11S4
-
OCR Scan
2SK1671 2SK1401 2SK1401A 2SK1164 2SK1165 2SK1166 HITACHI 2SJ* TO-3 btm 330 2sk1635

2SK1778

Abstract: 2sk1299 2SK1161 450 10 0.6 0.8 7 75 135 1050 2SK1162 500 0.7 0.9 2SK1163 450 11 100 0.55 0.7 8 , 2SK1626 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1206 2SK1225 2SK1315 2SK1316 2SK1328 2SK1163 2SK11S4
-
OCR Scan
2SK1167 2SK1168 2SK1919 2SK1778 2sk1299 peh 165 2SK151 Hitachi Scans-001 2SK1169 2SK1170 2SK1515 2SK1516

2sk1197

Abstract: 2SK1173 2SK1161 B iL SW-Reg, DDC MOS N E 450 DSS ±30 s 10 D 100 ±10« ±25 250« 360 2 3 10 lm 4 7 10 5 , 2SK1161 1050 40 0 10 0. 9 10 5 ton=75ns, toff=135nstyp ID=5A,VDD=30V 149 GDS 2SK1162 1150 55 0 10
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OCR Scan
2SK1153 2SK1154 2SK1155 2SK1156 2SK1173 2SK1202 2sk1197 2501L NEC 2501L 2SKU60 2SS1166

flyback 200w

Abstract: 2SK1635 2SK1161 2SK1162 2SK1163 2SK1206 2SK1225 2SK1315 2SK1316 2SK1328 2SK1163 2SK11S4 2SK1165 2SK1166 2SK1167
-
OCR Scan
2SK579 2SK580 2SK1151 2SK1152 2SK513 2SK1770 flyback 200w dc dc flyback 200w 2SK119 mosfet hitachi 2SK822 2SK1862 2SK1313

2cv1

Abstract: 2SJ113 2SK1161 2SK1162 2SK1163 2SK1206 2SK1225 2SK1315 2SK1316 2SK1328 2SK1163 2SK11S4 2SK1165 2SK1166 2SK1167
-
OCR Scan
2SJ214 2SK1094 2SK416 2SJ113 2SK414 2cv1 2SK1665 2sj119 121A-4 2SK1314 2SK1540 2SK1541 2SK1268 2SX1526 2SK1527

2SK1161

Abstract: 2SK1162 2SK1161 450 10 0.6 0.8 7 75 135 1050 2SK1162 500 0.7 0.9 2SK1163 450 11 100 0.55 0.7 8
-
OCR Scan
HITACHI 2SK* TO-3 2SK1517 2SK1518 2SK1403 2SK1403A 2SK1968 2SK1573

2sj177

Abstract: 2sk1301 2SK1161 2SK1162 2SK1163 2SK1206 2SK1225 2SK1315 2SK1316 2SK1328 2SK1163 2SK11S4 2SK1165 2SK1166 2SK1167
-
OCR Scan
2sj177 2sk1301 2SK97-2 2sj175 2SK1629 2SK1836 2SK1837 2SKS34 2SK684 2SK1199

mosfet inverter schematics

Abstract: MBN300A6 2SK1161 2SK1162 2SK1163 2SK1206 2SK1225 2SK1315 2SK1316 2SK1328 2SK1163 2SK11S4 2SK1165 2SK1166 2SK1167
-
OCR Scan
GN4530C GN6010A GN6015A GN6020C GN6030C GN6050E mosfet inverter schematics MBN300A6 UPS schematics inverter circuit schematics GN12015C GN12030E

MBN300A6

Abstract: flyback 200W 2SK1161 2SK1162 2SK1163 2SK1206 2SK1225 2SK1315 2SK1316 2SK1328 2SK1163 2SK11S4 2SK1165 2SK1166 2SK1167
-
OCR Scan
GN12050E DC MOTOR SPEED CONTROL USING IGBT Hitachi Three-Phase Motor Driver 2SK415 IGBT 900v 1kW IGBT IGBT 900v 60a GN6075E GN9060E GN17020E MBN400A6 MBN200F12

2SK1158

Abstract: 2sk1299 2SK1626 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1206 2SK1225 2SK1315 2SK1316 2SK1328 2SK1163 2SK11S4
-
OCR Scan
2SK1838 2SK1880 2SK1636 2SK1342 2SK1341 2SK1618 2SK1624 2SK1625

HITACHI Power MOSFET Arrays

Abstract: 2sk1299 2SK1157 2SK1158 2SK1313 2SK1314 2SK1540 2SK1541 2SK1626 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1206
-
OCR Scan
4AK17 2SK972 4AK15 2SK971 4AK16 2SK970 HITACHI Power MOSFET Arrays 2SK975 2sk1306
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