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2SK1159 Datasheet

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2SK1159 N/A Shortform Datasheet & Cross References Data
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1 pages,
77.02 Kb

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2SK1159 N/A Catalog Scans - Shortform Datasheet
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1 pages,
79.07 Kb

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2SK1159 N/A Catalog Scans - Shortform Datasheet
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1 pages,
80.15 Kb

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2SK1159 N/A FET Data Book
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2 pages,
103.01 Kb

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2SK1159 Hitachi Semiconductor Silicon N-Channel MOS FET
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9 pages,
49.57 Kb

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2SK1159 Hitachi Semiconductor Silicon N Channel MOS FET
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9 pages,
48.99 Kb

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2SK1159 Hitachi Semiconductor Mosfet Guide
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1147 pages,
6014.32 Kb

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2SK1159 Hitachi Semiconductor Silicon N-Channel MOS FET
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7 pages,
38.48 Kb

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2SK1159 Hitachi Semiconductor Power Transistors Data Book
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2 pages,
259.53 Kb

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2SK1159 Renesas Technology Silicon N-Channel MOS FET
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11 pages,
70.02 Kb

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2SK1159

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SK1159, 2SK1160 2SK1160 Silicon N-Channel MOS FET ADE-208-1249 ADE-208-1249 (Z) 1st. Edition Mar. 2001 , 2SK1159, 2SK1160 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol 2SK1159 , , duty cycle 1% 2. Value at TC = 25°C 2 2SK1159, 2SK1160 2SK1160 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1159 V(BR)DSS 450 breakdown voltage 2SK1160 2SK1160 Typ , current I GSS - - ±10 uA VGS = ±25 V, VDS = 0 Zero gate voltage 2SK1159 I DSS ... Hitachi Semiconductor
Original
datasheet

9 pages,
48.99 Kb

2SK1160 2SK1159 ADE-208-1249 TEXT
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Abstract: 2SK1159, 2SK1160 2SK1160 Silicon N-Channel MOS FET Application TO­220AB 220AB High speed power switching , Drain to source voltage 2SK1159 VDSS 450 - 2SK1160 2SK1160 V - 500 , - * PW 10 us, duty cycle 1 % * Value at TC = 25 °C 2SK1159, 2SK1160 2SK1160 Table 2 Electrical , - Drain to source breakdown voltage 2SK1159 V(BR)DSS 450 - 2SK1160 2SK1160 - - , - Zero gate voltage drain current 2SK1159 IDSS - - 250 uA VDS = 360 V, VGS ... Hitachi Semiconductor
Original
datasheet

7 pages,
38.48 Kb

2SK1160 2SK1159 220AB TEXT
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Abstract: 2.54 ± 0.5 2.54 ± 0.5 Ordering Information Part Name 2SK1159-E 2SK1160-E 2SK1160-E Quantity 500 pcs , 2SK1159, 2SK1160 2SK1160 Silicon N Channel MOS FET REJ03G0911-0200 REJ03G0911-0200 (Previous: ADE-208-1249 ADE-208-1249) Rev , 3 2SK1159, 2SK1160 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage , temperature Storage temperature Tch Tstg 150 ­55 to +150 °C °C 2SK1159 2SK1160 2SK1160 Gate to , Unit Drain to source breakdown 2SK1159 voltage 2SK1160 2SK1160 V(BR)DSS 450 500 - - V ... Renesas Technology
Original
datasheet

7 pages,
75.38 Kb

PRSS0004AC-A 2SK1160-E 2SK1160 2SK1159 REJ03G0911-0200 ADE-208-1249 TEXT
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Abstract: 2SK1159, 2SK1160 2SK1160 Silicon N-Channel MOS FET Application High speed power switching Features , 1. Gate 2. Drain (Flange) 3. Source S 2SK1159, 2SK1160 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1159 2SK1160 2SK1160 Gate to source voltage Drain current Drain peak current , 2SK1159, 2SK1160 2SK1160 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1159 V(BR)DSS 2SK1160 2SK1160 V(BR)GSS I GSS 450 500 ±30 - - - - - - ±10 250 V uA uA I G = ±100 ... Hitachi
Original
datasheet

8 pages,
46.14 Kb

Hitachi DSA002780 2SK1159 2SK1160 TEXT
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Abstract: 2SK1159,2SK1160 2SK1160 Silicon N-Channel MOS FET HITACHI Application H ig h sp eed p o w e r sw itch , . Source os 211 2SK1159, 2SK1160 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage , 2SK1159,2SK1160 2SK1160 Maximum Safe Operation Area (W) Channel Dissipation 0 Poh 50 100 150 Drain to , to Source Voltage VGS (V| HITACHI 214 2SK1159, 2SK1160 2SK1160 > Drain to Source Saturation Voltage , ) Drain Current lD (A) HITACHI 215 2SK1159,2SK1160 2SK1160 Body to Drain Diode Reverse Recovery Time ... OCR Scan
datasheet

7 pages,
215.9 Kb

2SK1159 2SK1160 TEXT
datasheet frame
Abstract: 2SK1159, 2SK1160 2SK1160 Silicon N-Channel MOS FET Application High speed power switching Features , 3 1. Gate 2. Drain (Flange) 3. Source G S 2SK1159, 2SK1160 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol 2SK1159 Ratings Unit VDSS 450 V , 2SK1159, 2SK1160 2SK1160 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1159 , = ±25 V, VDS = 0 Zero gate voltage 2SK1159 I DSS - - 250 uA VDS = 360 V, VGS ... Hitachi Semiconductor
Original
datasheet

9 pages,
49.57 Kb

Hitachi DSA00337 2SK1160 2SK1159 TEXT
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Abstract: 2SK1159, 2SK1160 2SK1160 Silicon N-Channel MOS FET Application High speed power switching Features , for switching regulator, DC-DC converter and motor driver Outline 2SK1159, 2SK1160 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1159 2SK1160 2SK1160 Gate to source voltage Drain , Symbol Min 2SK1159 V(BR)DSS 2SK1160 2SK1160 V(BR)GSS I GSS 450 500 ±30 - - - - - - ±10 250 V uA uA I G = , leak current Zero gate voltage drain current 2SK1159 I DSS 2SK1160 2SK1160 Gate to source cutoff voltage ... Hitachi
Original
datasheet

6 pages,
51.04 Kb

Hitachi DSA00279 2SK1159 2SK1160 TEXT
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Abstract: Information Part Name 2SK1159-E 2SK1160-E 2SK1160-E Quantity 500 pcs 500 pcs Shipping Container Box (Sack , developed or manufactured by or for Renesas Electronics. 2SK1159, 2SK1160 2SK1160 Silicon N Channel MOS FET , 1. Gate 2. Drain (Flange) 3. Source S 3 2SK1159, 2SK1160 2SK1160 Absolute Maximum Ratings (Ta , €“55 to +150 ° C ° C 2SK1159 2SK1160 2SK1160 Gate to source voltage Drain current Drain peak , Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Drain to source breakdown 2SK1159 ... Renesas Technology
Original
datasheet

9 pages,
444.06 Kb

TEXT
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Abstract: 2SK1159, 2SK1160 2SK1160 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed , motor driver Outline 2SK1159, 2SK1160 2SK1160 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol , 2SK1159, 2SK1160 2SK1160 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Drain to source , = 10 V, S Rl = 7.5 £2 1. Pulse test 3 HITACHI 2SK1159, 2SK1160 2SK1160 4 HITACHI 2SK1159, 2SK1160 2SK1160 Forward T ransfer A dm ittance S tatic Drain to S ource on State 0.1 0.2 0.5 ... OCR Scan
datasheet

6 pages,
58.7 Kb

2SK1159 2SK1160 TEXT
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Abstract: products contained therein. 2SK1159, 2SK1160 2SK1160 Silicon N-Channel MOS FET ADE-208-1249 ADE-208-1249 (Z) 1st , ) 3. Source G S 2SK1159, 2SK1160 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol 2SK1159 Ratings Unit VDSS 450 V 2SK1160 2SK1160 500 Gate to , +150 °C Notes: 1. PW 10 us, duty cycle 1% 2. Value at TC = 25°C 2 2SK1159, 2SK1160 2SK1160 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1159 V(BR)DSS 450 ... Hitachi Semiconductor
Original
datasheet

11 pages,
70.02 Kb

2SK1160 2SK1159 TEXT
datasheet frame
Abstract: 2SK1159, 2SK1160 2SK1160 Silicon N Channel MOS FET REJ03G0911-0200 REJ03G0911-0200 (Previous: ADE-208-1249 ADE-208-1249) Rev , 3 2SK1159, 2SK1160 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage , temperature Storage temperature Tch Tstg 150 ­55 to +150 °C °C 2SK1159 2SK1160 2SK1160 Gate to , Unit Drain to source breakdown 2SK1159 voltage 2SK1160 2SK1160 V(BR)DSS 450 500 - - V , - ns ns Zero gate voltage drain current 2SK1159 2SK1160 2SK1160 Gate to source cutoff voltage ... Renesas Technology
Original
datasheet

7 pages,
168.83 Kb

PRSS0004AC-A 2SK1160 2SK1159 REJ03G0911-0200 ADE-208-1249 TEXT
datasheet frame
Abstract: . 2SK1159, 2SK1160 2SK1160 Silicon N Channel MOS FET REJ03G0911-0200 REJ03G0911-0200 (Previous: ADE-208-1249 ADE-208-1249) Rev.2.00 Sep 07 , 2SK1159, 2SK1160 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS , Storage temperature Tch Tstg 150 ­55 to +150 °C °C 2SK1159 2SK1160 2SK1160 Gate to source , Drain to source breakdown 2SK1159 voltage 2SK1160 2SK1160 V(BR)DSS 450 500 - - V ID = 10 , - ns ns Zero gate voltage drain current 2SK1159 2SK1160 2SK1160 Gate to source cutoff voltage ... Renesas Technology
Original
datasheet

9 pages,
189.51 Kb

PRSS0004AC-A 2SK1160 2SK1159 TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
STP4NB50 STP4NB50 2SK1155 2SK1155 STP6NB50 STP6NB50 2SK1156 2SK1156 STP6NB50 STP6NB50 2SK1157 2SK1157 STP9NB50 STP9NB50 2SK1158 2SK1158 STP9NB50 STP9NB50 2SK1159 STP9NB50 STP9NB50 2SK1160 2SK1160
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3650-v3.htm
STMicroelectronics 25/05/2000 29.85 Kb HTM 3650-v3.htm
2SK1156 2SK1156 STP6NB50 STP6NB50 2SK1157 2SK1157 STP9NB50 STP9NB50 2SK1158 2SK1158 STP9NB50 STP9NB50 2SK1159 STP9NB50 STP9NB50 2SK1160 2SK1160 STP9NB50 STP9NB50 2SK1161 2SK1161 STP9NB50 STP9NB50
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3650.htm
STMicroelectronics 20/10/2000 31.22 Kb HTM 3650.htm
ST | POWER MOS CROSS REFERENCE POWER MOS CROSS REFERENCE Document Number: 3650 Date Update: 25/02/98 Pages: 17 The document is available in the following formats: Portable Document Format and Raw Text Format 2SK1119 2SK1119 STP4NA100 STP4NA100 2SK1120 2SK1120 STW7NA100 STW7NA100 2SK1151 2SK1151 STD2NA50 STD2NA50 2SK1152 2SK1152 STD2N52 STD2N52 2SK1153 2SK1153 STP4NB50 STP4NB50 2SK1154 2SK1154 STP4NB50 STP4NB50 2SK1155 2SK1155 STP6NB50 STP6NB50 2SK1156 2SK1156 STP6NB50 STP6NB50 2SK1157 2SK1157 STP9NB50 STP9NB50 2SK1158 2SK1158 STP9NB50 STP9NB50 2SK1159 STP9NB50 STP9NB50
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3650-v1.htm
STMicroelectronics 02/04/1999 89.26 Kb HTM 3650-v1.htm
ST | POWER MOS CROSS REFERENCE POWER MOS CROSS REFERENCE Document Number: 3650 Date Update: 25/02/98 Pages: 17 The document is available in the following formats: Portable Document Format and Raw Text Format 2SK1119 2SK1119 STP4NA100 STP4NA100 2SK1120 2SK1120 STW7NA100 STW7NA100 2SK1151 2SK1151 STD2NA50 STD2NA50 2SK1152 2SK1152 STD2N52 STD2N52 2SK1153 2SK1153 STP4NB50 STP4NB50 2SK1154 2SK1154 STP4NB50 STP4NB50 2SK1155 2SK1155 STP6NB50 STP6NB50 2SK1156 2SK1156 STP6NB50 STP6NB50 2SK1157 2SK1157 STP9NB50 STP9NB50 2SK1158 2SK1158 STP9NB50 STP9NB50 2SK1159 STP9NB50 STP9NB50
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3650-v2.htm
STMicroelectronics 14/06/1999 75.89 Kb HTM 3650-v2.htm
NSUB=0 TPG=1 UO=600 RG=74.4077 RDS=1.6MEG GDSNOI=0) * N-Channel 450V 0.7 Ohm 8A .MODEL 2SK1159 NMOS
/datasheets/files/spicemodels/misc/models/2s-jk.lib
Spice Models 04/04/2004 35.36 Kb LIB 2s-jk.lib
No abstract text available
/datasheets/files/stmicroelectronics/stonline/db/xref.txt
STMicroelectronics 30/03/1999 445.18 Kb TXT xref.txt
No abstract text available
/datasheets/files/stmicroelectronics/stonline/db/xref-v4.txt
STMicroelectronics 31/01/2001 1362.78 Kb TXT xref-v4.txt
No abstract text available
/datasheets/files/stmicroelectronics/stonline/db/xref-v1.txt
STMicroelectronics 20/10/2000 1859.39 Kb TXT xref-v1.txt
No abstract text available
/datasheets/files/stmicroelectronics/stonline/db/xref-v3.txt
STMicroelectronics 20/10/2000 1842.28 Kb TXT xref-v3.txt

STMicroelectronics Cross Reference Results

STMicroelectronics Part Industry Part Manufacturer Type Description
STP9NB50 Buy 2SK1159 Buy Hitachi Semiconductor Nearest Preferred Power MOSFETs - High Voltage

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