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Part : 2SK1155(E) Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 230 Best Price : $11.70 Price Each : $12.00
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Part : 2SK117 Supplier : Toshiba Manufacturer : New Advantage Stock : 175 Best Price : $1.20 Price Each : $1.20
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2SK1159 Datasheet

Part Manufacturer Description PDF Type
2SK1159 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK1159 Hitachi Semiconductor Silicon N Channel MOS FET Original
2SK1159 Hitachi Semiconductor Mosfet Guide Original
2SK1159 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK1159 Renesas Technology Silicon N-Channel MOS FET Original
2SK1159 Renesas Technology Silicon N Channel MOS FET Original
2SK1159 Hitachi Semiconductor Power Transistors Data Book Scan
2SK1159 N/A Shortform Datasheet & Cross References Data Scan
2SK1159 N/A Catalog Scans - Shortform Datasheet Scan
2SK1159 N/A Catalog Scans - Shortform Datasheet Scan
2SK1159 N/A FET Data Book Scan

2SK1159

Catalog Datasheet MFG & Type PDF Document Tags

2SK1159

Abstract: 2SK1160 2SK1159, 2SK1160 Silicon N-Channel MOS FET ADE-208-1249 (Z) 1st. Edition Mar. 2001 , 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol 2SK1159 , , duty cycle 1% 2. Value at TC = 25°C 2 2SK1159, 2SK1160 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1159 V(BR)DSS 450 breakdown voltage 2SK1160 Typ , current I GSS - - ±10 µA VGS = ±25 V, VDS = 0 Zero gate voltage 2SK1159 I DSS
Hitachi Semiconductor
Original
DSA003638 D-85622

2SK1159

Abstract: 2SK1160 2SK1159, 2SK1160 Silicon N-Channel MOS FET Application TO­220AB High speed power switching , Drain to source voltage 2SK1159 VDSS 450 - 2SK1160 V - 500 , - * PW 10 µs, duty cycle 1 % * Value at TC = 25 °C 2SK1159, 2SK1160 Table 2 Electrical , - Drain to source breakdown voltage 2SK1159 V(BR)DSS 450 - 2SK1160 - - , - Zero gate voltage drain current 2SK1159 IDSS - - 250 µA VDS = 360 V, VGS
Hitachi Semiconductor
Original

2SK1160-E

Abstract: 2SK1159 2.54 ± 0.5 2.54 ± 0.5 Ordering Information Part Name 2SK1159-E 2SK1160-E Quantity 500 pcs , 2SK1159, 2SK1160 Silicon N Channel MOS FET REJ03G0911-0200 (Previous: ADE-208-1249) Rev , 3 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage , temperature Storage temperature Tch Tstg 150 ­55 to +150 °C °C 2SK1159 2SK1160 Gate to , Unit Drain to source breakdown 2SK1159 voltage 2SK1160 V(BR)DSS 450 500 - - V
Renesas Technology
Original
PRSS0004AC-A

Hitachi DSA002780

Abstract: 2SK1159, 2SK1160 Silicon N-Channel MOS FET Application High speed power switching Features , 1. Gate 2. Drain (Flange) 3. Source S 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1159 2SK1160 Gate to source voltage Drain current Drain peak current , 2SK1159, 2SK1160 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1159 V(BR)DSS 2SK1160 V(BR)GSS I GSS 450 500 ±30 - - - - - - ±10 250 V µA µA I G = ±100
Hitachi
Original
Hitachi DSA002780

k1159

Abstract: K1160 2SK1159,2SK1160 Silicon N-Channel MOS FET HITACHI Application H ig h sp eed p o w e r sw itch , . Source os 211 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage , 2SK1159,2SK1160 Maximum Safe Operation Area (W) Channel Dissipation 0 Poh 50 100 150 Drain to , to Source Voltage VGS (V| HITACHI 214 2SK1159, 2SK1160 > Drain to Source Saturation Voltage , ) Drain Current lD (A) HITACHI 215 2SK1159,2SK1160 Body to Drain Diode Reverse Recovery Time
-
OCR Scan
k1159 K1160

2SK1159

Abstract: 2SK1160 2SK1159, 2SK1160 Silicon N-Channel MOS FET Application High speed power switching Features , 3 1. Gate 2. Drain (Flange) 3. Source G S 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol 2SK1159 Ratings Unit VDSS 450 V , 2SK1159, 2SK1160 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1159 , = ±25 V, VDS = 0 Zero gate voltage 2SK1159 I DSS - - 250 µA VDS = 360 V, VGS
Hitachi Semiconductor
Original
Hitachi DSA00337

Hitachi DSA00279

Abstract: 2SK1159, 2SK1160 Silicon N-Channel MOS FET Application High speed power switching Features , for switching regulator, DC-DC converter and motor driver Outline 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1159 2SK1160 Gate to source voltage Drain , Symbol Min 2SK1159 V(BR)DSS 2SK1160 V(BR)GSS I GSS 450 500 ±30 - - - - - - ±10 250 V µA µA I G = , leak current Zero gate voltage drain current 2SK1159 I DSS 2SK1160 Gate to source cutoff voltage
Hitachi
Original
Hitachi DSA00279
Abstract: Information Part Name 2SK1159-E 2SK1160-E Quantity 500 pcs 500 pcs Shipping Container Box (Sack , developed or manufactured by or for Renesas Electronics. 2SK1159, 2SK1160 Silicon N Channel MOS FET , 1. Gate 2. Drain (Flange) 3. Source S 3 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta , '"55 to +150 ° C ° C 2SK1159 2SK1160 Gate to source voltage Drain current Drain peak , Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Drain to source breakdown 2SK1159 Renesas Technology
Original
Abstract: 2SK1159, 2SK1160 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed , motor driver Outline 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol , 2SK1159, 2SK1160 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Drain to source , = 10 V, S Rl = 7.5 £2 1. Pulse test 3 HITACHI 2SK1159, 2SK1160 4 HITACHI 2SK1159, 2SK1160 Forward T ransfer A dm ittance S tatic Drain to S ource on State 0.1 0.2 0.5 -
OCR Scan

2SK1159

Abstract: 2SK1160 products contained therein. 2SK1159, 2SK1160 Silicon N-Channel MOS FET ADE-208-1249 (Z) 1st , ) 3. Source G S 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol 2SK1159 Ratings Unit VDSS 450 V 2SK1160 500 Gate to , +150 °C Notes: 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2 2SK1159, 2SK1160 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1159 V(BR)DSS 450
Hitachi Semiconductor
Original

Hitachi DSA002712

Abstract: 2SK1159, 2SK1160 Silicon N-Channel MOS FET November 1996 Application High speed power , 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1159 2SK1160 Gate to source voltage Drain current Drain , 2SK1159, 2SK1160 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1159 V(BR)DSS 2SK1160 Gate to source breakdown voltage Gate to source leak current Zero gate
Hitachi
Original
Hitachi DSA002712

2SK1159

Abstract: 2SK1160 2.54 ± 0.5 2.54 ± 0.5 Ordering Information Part Name 2SK1159-E 2SK1160-E Quantity 500 pcs , 2SK1159, 2SK1160 Silicon N Channel MOS FET REJ03G0911-0200 (Previous: ADE-208-1249) Rev , 3 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage , temperature Storage temperature Tch Tstg 150 ­55 to +150 °C °C 2SK1159 2SK1160 Gate to , Unit Drain to source breakdown 2SK1159 voltage 2SK1160 V(BR)DSS 450 500 - - V
Renesas Technology
Original

2SK1159

Abstract: 2SK1160 2.54 ± 0.5 2.54 ± 0.5 Ordering Information Part Name 2SK1159-E 2SK1160-E Quantity 500 pcs , . 2SK1159, 2SK1160 Silicon N Channel MOS FET REJ03G0911-0200 (Previous: ADE-208-1249) Rev.2.00 Sep 07 , 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS , Storage temperature Tch Tstg 150 ­55 to +150 °C °C 2SK1159 2SK1160 Gate to source , Drain to source breakdown 2SK1159 voltage 2SK1160 V(BR)DSS 450 500 - - V ID = 10
Renesas Technology
Original

2SK1158

Abstract: 2sk1299 70 135 1050 2SK1158 500 60 0.7 0.9 2SK1159 450 8 0.55 0.7 7.5 72 145 1150 2SK1160 500 , 2SK1626 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1206 2SK1225 2SK1315 2SK1316 2SK1328 2SK1163 2SK11S4
-
OCR Scan
2SK1838 2SK1151 2SK1152 2SK1880 2SK1636 2SK1313 2sk1299 2SK1341 Hitachi Scans-001
Abstract: 2SK1159 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)450 V(BR)GSS (V)30 I(D) Max. (A)8.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case Thermal Resistance Junc-Amb. V(GS)th Max. (V) V(GS)th (V) (Min) @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC American Microsemiconductor
Original

2sk1197

Abstract: 2SK1173 B ÃL SW-Reg. DDC MOS N E 500 DSS ±30 s 7 D 60 ±10« ±25 250« 400 2 3 10 lm 4 6.5 10 4 2SK1159 , =72jis, toff=145nstyp ID=4A, VDD=30V 116B GDS 2SK1159 1150 55 0 10 0.8 10 4 ton=72ns. toff=145nstyp ID
-
OCR Scan
2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1173 2sk1197 2SK1202 2501L NEC 2501L 2SKU60

2SK1159

Abstract: 2SK1160 - * Pulse Test See characteristic curves of 2SK1159, 2SK1160. 2SK1315 L , 2SK1315 S , 2SK1316
-
Original
drain body breakdown voltage

flyback 200w

Abstract: 2SK1635 2SK1154 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313 2SK1314 2SK1540 2SK1541 2SK1626 2SK1159 2SK1160
-
OCR Scan
2SK579 2SK580 2SK513 2SK1770 2SK975 2SK1094 flyback 200w 2SK1635 dc dc flyback 200w 2SK119 mosfet hitachi 2SK1165 2SK1166 2SK1167 2SK1168
Abstract: Test See characteristics curves of 2SK1159. HITACHI 3 -
OCR Scan
2SK2423

2SK1159

Abstract: 2SK2423 - * Pulse Test See characteristics curves of 2SK1159. Hitachi Semiconductor
Hitachi Semiconductor
Original
220CFM

2cv1

Abstract: 2SJ113 2SK1154 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313 2SK1314 2SK1540 2SK1541 2SK1626 2SK1159 2SK1160
-
OCR Scan
2SJ214 2SK416 2SJ113 2SK414 2cv1 2SK1665 2sj119 121A-4 2SK1268 2SK1170 2SX1526 2SK1527 2SK1629 2SK1836

Hitachi DSA002779

Abstract: recovery time Note: 1. Pulse test See characteristic curves of 2SK1159, 2SK1160. 3 2SK1315(L)(S
Hitachi
Original
Hitachi DSA002779
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