NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SK1061 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
Scan |  |
|
|||||
| 2SK1061 | N/A | FET Data Book |
2 pages, |
Scan | |
|
|||||
| 2SK1061 | Toshiba | FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE |
4 pages, |
Scan | |
|
|||||
| 2SK1061 | Toshiba | N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH, INTERFACE APPLICATIONS) |
4 pages, |
Scan | |
|
|||||
| 2SK1061 | Toshiba | N-Channel MOSFET |
4 pages, |
Scan | |
|
|||||
| 2SK1061 | Toshiba | Small-Signal MOS FETs(Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; V th (V): (min 2) (max 3.5); R DS On 0.6 (max 1); Drain-Source Voltage (V): (max 60); Drain Current (mA): (max 200) |
5 pages, |
Original | |
|
|||||
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Analog Switch Applications Interface Applications · Unit: mm Excellent , failure rate, etc). 1 2007-11-01 2SK1061 Electrical Characteristics (Ta = 25°C , with caution. 2 2007-11-01 2SK1061 3 2007-11-01 2SK1061 4 2007-11-01 2SK1061 RESTRICTIONS ON PRODUCT USE 20070701-EN 20070701-EN GENERAL · The information contained herein is ... | Original |
5 pages, |
2SK1061 2SJ167 2SK1061 abstract |
|
|||
| Abstract: STF50 2SK1061 NMOS 2SK1061 · : mm : ton = 14 ns () · : |Yfs| = 100 mS , 1 2007-11-01 2SK1061 (Ta = 25°C , ns 35 75 2007-11-01 2SK1061 ID VDS ID VDS 0.20 3.8 0.08 , 0.3 0.5 1 3 5 10 VDS 30 50 (V) 3 2007-11-01 2SK1061 IDR VDS 3 , 4 100 Ta 120 140 160 (°C) 2007-11-01 2SK1061 · · · ... | Original |
5 pages, |
2SK1061 2SJ167 2SK1061 abstract |
|
|||
| Abstract: 2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Analog Switch Applications Interface Applications · Unit: mm Excellent , 2-4E1E Weight: 0.13 g (typ.) 1 2003-03-25 2SK1061 Electrical Characteristics (Ta = 25°C , electrostatic sensitive device. Please handle with caution. 2 2003-03-25 2SK1061 3 2003-03-25 2SK1061 4 2003-03-25 2SK1061 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA is ... | Original |
5 pages, |
2SK1061 2SJ167 2SK1061 abstract |
|
|||
| Abstract: 2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Analog Switch Applications Interface Applications · Unit: mm Excellent , failure rate, etc). 1 2007-11-01 2SK1061 Electrical Characteristics (Ta = 25°C , with caution. 2 2007-11-01 2SK1061 3 2007-11-01 2SK1061 4 2007-11-01 2SK1061 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates ... | Original |
5 pages, |
2SK1061 2SJ167 2SK1061 abstract |
|
|||
| Abstract: TOSHIBA 2SK1061 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1061 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS INTERFACE APPLICATIONS Excellent Switching Times : ton = , to change without notice. 1999-10-19 1/4 TOSHIBA 2SK1061 ELECTRICAL CHARACTERISTICS (Ta = 25°C , with caution. 1999-10-19 2/4 TOSHIBA 2SK1061 0.20 g 0.16 Q H 0.12 £ H Pä « B 0.08 & S Q , 3 5 10 30 50 DRAIN-SOURCE VOLTAGE VDS (V) 1999-10-19 3/4 TOSHIBA 2SK1061 s ës t> w op 300 ... | OCR Scan |
4 pages, |
2SK1061 2SJ167 2SK1061 abstract |
|
|||
| Abstract: TOSHIBA 2SK1061 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1061 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS INTERFACE APPLICATIONS Excellent Switching Times : ton = , 2SK1061 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. , electrostatic sensitive device. Please handle with caution. 2001-03-22 2/4 TOSHIBA 2SK1061 0.20 id - vds , 3 5 10 30 50 DRAIN-SOURCE VOLTAGE VDS (V) 2001-03-22 3/4 TOSHIBA 2SK1061 S ës t> w op 300 ... | OCR Scan |
4 pages, |
2SK1061 2SJ167 2SK1061 abstract |
|
|||
| Abstract: 10 lm 4 10 3 2SK1061 ses HS SW.A-S» MOS N E 60 DS ±20 s 200m D 300m ±100n ±10 10« 60 2 3.5 10 lm , VDD=30V 2SJ167 2SJ167 70D SDG 2SK1061 55 13 0 10 1 10 50« ton=14ns, toff=75nstyp 1D=100mA, VDD=30V 2SJ168 2SJ168 ... | OCR Scan |
2 pages, |
2SK1012 2SK1051 2SK1041 2sk1040 2SK1038 2SK105 2SK1037 2SK1059 2SK1046 2SK1043 2SK1042 2SK1047 2SK1044 2sk1039 2SK1060 2SK1037 abstract |
|
|||
| Abstract: 2SJ167 2SJ167 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ167 2SJ167 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm · Excellent switching time: ton = 14 ns (typ.) · High forward transfer admittance: |Yfs| = 100 mS (min) · Low on resistance: RDS (ON) = 1.3 (typ.) · Enhancement-mode · Complementary to 2SK1061 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -60 ... | Original |
5 pages, |
2SK1061 2SJ167 2SJ167 abstract |
|
|||
| Abstract: 2SJ167 2SJ167 PMOS 2SJ167 2SJ167 · : mm : ton = 14 ns () · : |Yfs| = 100 mS () · · · 2SK1061 : RDS (ON) = 1.3 () (Ta = 25°C) VDSS -60 V VGSS ±20 V DC ID -200 IDP -800 (Ta = 25°C) PD 300 mW Tch 150 °C Tstg -55~150 °C : mA JEDEC JEITA 2-4E1E : 0.13 g () (//) (/) () () MOS ... | Original |
5 pages, |
2SK1061 2SJ167 2SJ167 abstract |
|
|||
| Abstract: TOSHIBA 2SJ167 2SJ167 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ167 2SJ167 HIGH SPPED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS INTERFACE APPLICATIONS Excellent Switching Time High Forward Transfer Admittance Low On Resistance Enhancement-Mode Complementary to 2SK1061 MAXIMUM RATINGS (Ta = 25°C) ton = 14 ns (Typ.) |Yfs| = lOOmS (Min.) RdS(ON) = 1-3 0 (Typ.) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage vdss -60 V Gate-Source Voltage vgss ±20 V Drain ... | OCR Scan |
4 pages, |
2SK1061 2SK106 2SJ167 2SJ167 abstract |
|
|||
| Abstract: 2SJ167 2SJ167 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ167 2SJ167 High Speed Switching Applications Analog Switch Applications Interface Applications · Unit: mm Excellent switching time: ton = 14 ns (typ.) · High forward transfer admittance: |Yfs| = 100 mS (min) · Low on resistance: RDS (ON) = 1.3 (typ.) · Enhancement-mode · Complementary to 2SK1061 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS ... | Original |
5 pages, |
2SK1061 2SJ167 2SJ167 abstract |
|
|||
| Part | Similar Part | Notes |