500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : 2SJ646-E Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 9,975 Best Price : $0.27 Price Each : $0.27
Part : 2SJ646-TL-E Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 73,200 Best Price : $0.27 Price Each : $0.27
Part : 2SJ646-TL-E Supplier : SANYO Electric Manufacturer : Rochester Electronics Stock : 8,400 Best Price : $0.27 Price Each : $0.27
Shipping cost not included. Currency conversions are estimated. 

2SJ646 Datasheet

Part Manufacturer Description PDF Type
2SJ646 Sanyo Semiconductor 2SJ646 Datasheet Original

2SJ646

Catalog Datasheet MFG & Type PDF Document Tags

2sc5203

Abstract: 2SK3615 2SJ636 2SD761 - 2SJ233 2SJ637 MCH6302 MCH6318 2SJ608 2SJ646 CPH6352 CPH6329 , 2SJ226 2SJ646 2SK1735 2SK3615 2SJ227 2SJ646 2SK1737 2SK3617 2SJ229 2SJ633
-
Original
CPH6405 CPH6434 TIG008SS TIG014SS TIG002SS TIG008TS 2sc5203 2sk*3615 2SK1731 TIG022TS 2SK3492 SANYO Replacement list

IT06907

Abstract: 2SJ646 2SJ646 No. N 8 2 8 2 2SJ646 P MOS 4V Absolute Maximum Ratings / Ta , -100575 No.8282-1/4 2SJ646 min Qg Qgs Qgd VDS= - 10V, VGS= - 10V , =10µs D.C.1% G P.G 50 2SJ646 S ID - VDS ID - VGS -6 VDS= -10V V .5V -3 , ) - m , RDS(on) - m 2SJ646 Tc=25°C 1 -0.1 -0.01 2 3 5 7-0.1 2 3 5 7-1.0 2 3 5 7 -10 , VDS - V 2 3 5 IT09670 No.8282-3/4 2SJ646 PD - Ta 1.5
SANYO Electric
Original
IT06907 62005PA TA-100575 IT09669 IT04498

2SJ646

Abstract: 2SJ646 Ordering number : ENN8282 P-Channel Silicon MOSFET 2SJ646 General-Purpose , , TOKYO, 110-8534 JAPAN 62005PA MS IM TA-100575 No.8282-1/4 2SJ646 Continued from preceding page , .1% G P.G 50 2SJ646 S No.8282-2/4 2SJ646 ID - VDS ID - VGS V -6 V , .8282-3/4 2SJ646 VGS - Qg -10 2 n -1.0 7 5 Operation in this area is limited by , Note on usage : Since the 2SJ646 is a MOSFET product, please avoid using this device in the vicinity
SANYO Electric
Original

2SJ646

Abstract: 2SJ646 No. N 8 2 8 2 N 2SJ646 P MOS 4V Absolute Maximum Ratings , () 370-0596 11 D0606 / 62005PA MS IM TA-100575 No.8282-1/4 2SJ646 min Qg , -10V D VIN PW=10µs D.C.1% G P.G 50 2SJ646 S ID - VDS ID - VGS -6 , = 300 , RDS(on) - m , RDS(on) - m 2SJ646 Tc=25°C 1 -0.1 -0.01 2 3 5 7-0.1 2 3 5 7-1.0 2 3 5 7 -10 , VDS - V 2 3 5 IT09670 No.8282-3/4 2SJ646 PD
-
Original
IT09667 IT09671 IT09672
Abstract: ¼ž PchMOSFET : 2SJ646 (SANYO) SBD : DE5PC3(æ°é›»åƒ) L : CDRH8D28-4R7(4.7μH,SUMIDA / fosc=1.0MHz) CDRH8D43 , ¼1A â¼2A 2SJ616 ï¼SANYO) D1FH3ï¼æ°é›»åƒï¼‰ CMS02ï¼æ±èï¼‰ â¼3A 2SJ646 ï¼SANYOï , ï¼ä½¿ç"¨éƒ¨å"ä¾'> PchMOSFET : 2SJ646 (SANYO) SBD : DE5PC3(æ°é›»åƒ) L : CDRH8D28-4R7(4.7μH,SUMIDA / fosc , /21x095xx XC9220/21x095xx Tr:2SJ646, SBD:DE5PC3, CDRH127-10uH CIN=10uF(ceramic), CL=44uF(ceramic , : EFFI (%) 100 Tr:2SJ646, SBD:DE5PC3, CDRH127-10uH CIN=10uF(ceramic), CL=44uF(ceramic), RSENSE Torex Semiconductor
Original
XC9220/XC9221 JTR0511-012 XC9220 XC9221

XA9221

Abstract: ¨™æºå›žè·¯ä¾' ï¼ä½¿ç"¨éƒ¨å"ä¾'> PchMOSFET : 2SJ646 (SANYO) SBD : DE5PC3(æ°é›»åƒ) L : CDRH8D28 , '»2 ã'·ãƒ§ãƒƒãƒã'­ãƒ¼ãƒ'ã'¤ã'ªãƒ¼ãƒ‰ã¯é'流特æ'§ã®è‰¯ã"ã''のã''ã"使ç"¨ä¸'さã"ã'' 6/21 â¼3A 2SJ646 ï¼SANYO) DE5PC3 ï¼æ°é›»åƒï , ¼ž2.5V ï¼ä½¿ç"¨éƒ¨å"ä¾'> PchMOSFET : 2SJ646 (SANYO) SBD : DE5PC3(æ°é›»åƒ) L : CDRH8D28-4R7(4.7μH,SUMIDA / fosc , ¾' ●ã''å¹ç‡ï¼å‡ºå›é›»æµç‰¹æ'§ä¾' XA9220/21x095xx XA9220/21x095xx Tr:2SJ646, SBD:DE5PC3, CDRH127-10uH CIN=10uF(ceramic , 90 Efficiency : EFFI (%) 100 Tr:2SJ646, SBD:DE5PC3, CDRH127-10uH CIN=10uF(ceramic), CL
Torex Semiconductor
Original
XA9221 XA9220/XA9221 JTR0517-001 XA9220

CDRH8D43-100

Abstract: XC9221A095MR External Components Pch MOSFET: 2SJ646 (SANYO) SBD: DE5PC3 (SHINDENGEN) L: CDRH8D28-4R7 (4.7H, SUMIDA , 2SJ616 (SANYO) CPH3308 (SANYO) 2SJ646 (SANYO) D1FH3 (SHINDENGEN) CMS02 (TOSHIBA) *1 , P-ch MOSFET: 2SJ646 (SANYO) SBD: DE5PC3 (SHINDENGEN) L: CDRH8D28-4R7 (4.7H, SUMIDA / fosc , :2SJ646, SBD:DE5PC3, CDRH127-10uH, CIN=10uF(ceramic), CL=44uF(ceramic), RSENSE=50mohm VIN=12V => VOUT=5V 100 100 90 80 80 Efficiency: EFFI (%) 90 Efficiency: EFFI (%) Tr:2SJ646, SBD:DE5PC3
Torex Semiconductor
Original
CDRH8D43-100 XC9221A095MR XC9221A DE5PC3 CDRH127-10uH ETR0511 XC9220/XC9221A XC9220/XC9221B

XC9220

Abstract: XC9221 ● External Components Pch MOSFET: 2SJ646 (SANYO) SBD: DE5PC3 (SHINDENGEN) L: CDRH8D28-4R7 (4.7Î , ) 2SJ646 (SANYO) D1FH3 (SHINDENGEN) CMS02 (TOSHIBA) *1: Recommended to use P-ch MOSFET with Ciss , ‰¦2.5V VOUT>2.5V RSENSE (mΩ) 100 50 ï¼External Components> P-ch MOSFET: 2SJ646 (SANYO) SBD: DE5PC3 , :2SJ646, SBD:DE5PC3, CDRH127-10uH, CIN=10uF(ceramic), CL=44uF(ceramic), RSENSE=50mohm VIN=12V => VOUT=5V 100 100 90 80 80 Efficiency: EFFI (%) 90 Efficiency: EFFI (%) Tr:2SJ646, SBD:DE5PC3
Torex Semiconductor
Original
ETR0511-010
Abstract: APPLICATION CIRCUITS External Components Pch MOSFET: 2SJ646 (SANYO) SBD: DE5PC3 (SHINDENGEN) L: CDRH8D28 , (TOREX) UP TO 1A UP TO 2A 2SJ616 (SANYO) UP TO 3A 2SJ646 (SANYO) DE5PC3 (SHINDENGEN) D1FH3 , below. OUTPUT VOLTAGE VOUT2.5V VOUT>2.5V RSENSE (m) 100 50 External Components P-ch MOSFET: 2SJ646 , CHARACTERISTICS (1) Efficiency vs. Output Current XC9220/21x095xx Tr:2SJ646, SBD:DE5PC3, CDRH127-10uH, CIN=10uF(ceramic), CL=44uF(ceramic), RSENSE=50mohm VIN=12V => VOUT=5V XC9220/21x095xx Tr:2SJ646, SBD:DE5PC3 Torex Semiconductor
Original
ETR0511-011
Abstract: 13 150 220 180 TYPICAL APPLICATION CIRCUIT External Components Q - P-channel MOSFET: 2SJ646 , ) 2SJ646 (SANYO) DE5PC3 (SHINDENGEN) *1: Recommended to use P-channel MOSFET with Ciss less than 1500 , IXD3220/21x095xx Q - 2SJ646, D - DE5PC3, L - CDRH127 - 10µH, CIN =10 µF(ceramic), C L= 47 µF (ceramic), RSENSE = 50 mâ"¦, VIN = 12 V, VOUT = 5 V Q -2SJ646, D - DE5PC3, L - CDRH127 â'" 10 µH, CIN = , . Output Current IXD3220/21x095xx IXD3220/21x095xx Q - 2SJ646, D - DE5PC3, L - CDRH127 - 10µH, CIN IXYS
Original
IXD3220/IXD3221 IXD3220 IXD3221 IXD3220/221 IXD3220A/221A IXD3220B/221B
Abstract: â TYPICAL APPLICATION CIRCUITS ● External Components Pch MOSFET: 2SJ646 (SANYO) SBD: DE5PC3 , XB01SB04A2BR (TOREX) UP TO 2A UP TO 3A 2SJ616 (SANYO) CPH3308 (SANYO) 2SJ646 (SANYO , (mΩ) 100 50 ï¼External Components> P-ch MOSFET: 2SJ646 (SANYO) SBD: DE5PC3 (SHINDENGEN) L , /21x095xx XC9220/21x095xx Tr:2SJ646, SBD:DE5PC3, CDRH127-10uH, CIN=10uF(ceramic), CL=44uF(ceramic , : EFFI (%) Tr:2SJ646, SBD:DE5PC3, CDRH127-10uH CIN=10uF(ceramic), CL=44uF(ceramic), RSENSE Torex Semiconductor
Original
XC9220/9221 XC9220/9221A XC9220/9221B

ta1521

Abstract: 9221 External Components Pch MOSFET: 2SJ646 (SANYO) SBD: DE5PC3 (SHINDENGEN) L: CDRH8D28-4R7 (4.7uH, SUMIDA , 2SJ616 (SANYO) CPH3308 (SANYO) 2SJ646 (SANYO) D1FH3 (SHINDENGEN) CMS02 (TOSHIBA) *1 , P-ch MOSFET: 2SJ646 (SANYO) SBD: DE5PC3 (SHINDENGEN) L: CDRH8D28-4R7 (4.7uH, SUMIDA / Fosc , . Output Current XC9220/21x095xx XC9220/21x095xx Tr:2SJ646, SBD:DE5PC3, CDRH127-10uH, CIN , : EFFI (%) 90 Efficiency: EFFI (%) Tr:2SJ646, SBD:DE5PC3, CDRH127-10uH CIN=10uF(ceramic), CL
Torex Semiconductor
Original
ta1521 9221 9221B ETR0511-007 XC922

9221 MARKING

Abstract: XC9221 XC9220/XC9221 Series TYPICAL APPLICATION CIRCUITS External Components Pch MOSFET: 2SJ646 (SANYO , 2SJ616 (SANYO) CPH3308 (SANYO) 2SJ646 (SANYO) D1FH3 (SHINDENGEN) CMS02 (TOSHIBA) *1 , P-ch MOSFET: 2SJ646 (SANYO) SBD: DE5PC3 (SHINDENGEN) L: CDRH8D28-4R7 (4.7H, SUMIDA / fosc , :2SJ646, SBD:DE5PC3, CDRH127-10uH, CIN=10uF(ceramic), CL=44uF(ceramic), RSENSE=50mohm VIN=12V => VOUT=5V 100 100 90 80 80 Efficiency: EFFI (%) 90 Efficiency: EFFI (%) Tr:2SJ646, SBD:DE5PC3
Torex Semiconductor
Original
9221 MARKING

XC9221

Abstract: Sumida External Components Pch MOSFET: 2SJ646 (SANYO) SBD: DE5PC3 (SHINDENGEN) L: CDRH8D28-4R7 (4.7H, SUMIDA , 2A UP TO 3A 2SJ616 (SANYO) CPH3308 (SANYO) 2SJ646 (SANYO) D1FH3 (SHINDENGEN) CMS02 , External Components P-ch MOSFET: 2SJ646 (SANYO) SBD: DE5PC3 (SHINDENGEN) L: CDRH8D28-4R7 (4.7H, SUMIDA , XC9220/21x095xx Tr:2SJ646, SBD:DE5PC3, CDRH127-10uH, CIN=10uF(ceramic), CL=44uF(ceramic), RSENSE , ) Tr:2SJ646, SBD:DE5PC3, CDRH127-10uH CIN=10uF(ceramic), CL=44uF(ceramic), RSENSE=50mohm VOUT
Torex Semiconductor
Original
Sumida transistor 6c x

datacheet

Abstract: XC9221A External Components Pch MOSFET: 2SJ646 (SANYO) SBD: DE5PC3 (SHINDENGEN) L: CDRH8D28-4R7 (4.7H, SUMIDA , 2SJ616 (SANYO) CPH3308 (SANYO) 2SJ646 (SANYO) D1FH3 (SHINDENGEN) CMS02 (TOSHIBA) *1 , P-ch MOSFET: 2SJ646 (SANYO) SBD: DE5PC3 (SHINDENGEN) L: CDRH8D28-4R7 (4.7H, SUMIDA / fosc , CHARACTERISTICS (Continued) (1) Efficiency vs. Output Current XC9220/21x095xx XC9220/21x095xx Tr:2SJ646 , =5V 100 100 90 80 80 Efficiency: EFFI (%) 90 Efficiency: EFFI (%) Tr:2SJ646, SBD:DE5PC3
Torex Semiconductor
Original
datacheet XC9221C
Abstract: Series â TYPICAL APPLICATION CIRCUITS ● External Components Pch MOSFET: 2SJ646 (SANYO) SBD , TO 2A UP TO 3A 2SJ616 (SANYO) CPH3308 (SANYO) 2SJ646 (SANYO) D1FH3 (SHINDENGEN , 50 ï¼External Components> P-ch MOSFET: 2SJ646 (SANYO) SBD: DE5PC3 (SHINDENGEN) L: CDRH8D28 , ) Efficiency vs. Output Current XC9220/21x095xx XC9220/21x095xx Tr:2SJ646, SBD:DE5PC3, CDRH127-10uH, CIN , : EFFI (%) 90 Efficiency: EFFI (%) Tr:2SJ646, SBD:DE5PC3, CDRH127-10uH CIN=10uF(ceramic), CL Torex Semiconductor
Original

datacheet

Abstract: Series TYPICAL APPLICATION CIRCUITS External Components Pch MOSFET: 2SJ646 (SANYO) SBD: DE5PC3 , (TOREX) UP TO 1A UP TO 2A 2SJ616 (SANYO) UP TO 3A 2SJ646 (SANYO) DE5PC3 (SHINDENGEN) D1FH3 , below. OUTPUT VOLTAGE VOUT2.5V VOUT>2.5V RSENSE (m) 100 50 External Components P-ch MOSFET: 2SJ646 , ) Efficiency vs. Output Current XC9220/21x095xx Tr:2SJ646, SBD:DE5PC3, CDRH127-10uH, CIN=10uF(ceramic), CL=44uF(ceramic), RSENSE=50mohm VIN=12V => VOUT=5V XC9220/21x095xx Tr:2SJ646, SBD:DE5PC3, CDRH127-10uH CIN
Torex Semiconductor
Original

CDRH8D43-100

Abstract: 9221 MARKING Components Pch MOSFET: 2SJ646 (SANYO) SBD: DE5PC3 (SHINDENGEN) L: CDRH8D28-4R7 (4.7uH, SUMIDA / Fosc , 2SJ616 (SANYO) CPH3308 (SANYO) 2SJ646 (SANYO) D1FH3 (SHINDENGEN) CMS02 (TOSHIBA) *1 , P-ch MOSFET: 2SJ646 (SANYO) SBD: DE5PC3 (SHINDENGEN) L: CDRH8D28-4R7 (4.7uH, SUMIDA / Fosc , ) Efficiency vs. Output Current XC9220/21x095xx XC9220/21x095xx Tr:2SJ646, SBD:DE5PC3, CDRH127-10uH, CIN , : EFFI (%) 90 Efficiency: EFFI (%) Tr:2SJ646, SBD:DE5PC3, CDRH127-10uH CIN=10uF(ceramic), CL
Torex Semiconductor
Original
TOSHIBA DIODE CATALOG Capacitor Fixed Electrolytic 10uF 100V
Abstract: XC9220/XC9221 Series â TYPICAL APPLICATION CIRCUITS ● External Components Pch MOSFET: 2SJ646 , XB01SB04A2BR (TOREX) UP TO 2A UP TO 3A 2SJ616 (SANYO) CPH3308 (SANYO) 2SJ646 (SANYO , >2.5V RSENSE (mΩ) 100 50 ï¼External Components> P-ch MOSFET: 2SJ646 (SANYO) SBD: DE5PC3 , (Continued) (1) Efficiency vs. Output Current XC9220/21x095xx XC9220/21x095xx Tr:2SJ646, SBD:DE5PC3 , 80 80 Efficiency: EFFI (%) 90 Efficiency: EFFI (%) Tr:2SJ646, SBD:DE5PC3, CDRH127 Torex Semiconductor
Original
Abstract: Series â TYPICAL APPLICATION CIRCUITS ● External Components Pch MOSFET: 2SJ646 (SANYO) SBD , XB01SB04A2BR (TOREX) UP TO 2A UP TO 3A 2SJ616 (SANYO) CPH3308 (SANYO) 2SJ646 (SANYO , >2.5V RSENSE (mΩ) 100 50 ï¼External Components> P-ch MOSFET: 2SJ646 (SANYO) SBD: DE5PC3 , CHARACTERISTICS (Continued) (1) Efficiency vs. Output Current XC9220/21x095xx XC9220/21x095xx Tr:2SJ646 , =5V 100 100 90 80 80 Efficiency: EFFI (%) 90 Efficiency: EFFI (%) Tr:2SJ646, SBD:DE5PC3 Torex Semiconductor
Original
Abstract: CIRCUIT External Components Q - P-channel MOSFET: 2SJ646 (SANYO) D - DE5PC3 (SHINDENGEN) L - CDRH8D28 , ) XB01SB04A2BR (TOREX) D1FH3 (SHINDENGEN) CMS02 (TOSHIBA) 2SJ646 (SANYO) DE5PC3 (SHINDENGEN) *1 , Current Topr = 25 C IXD3220/21x095xx IXD3220/21x095xx Q - 2SJ646, D - DE5PC3, L - CDRH127 - , -2SJ646, D - DE5PC3, L - CDRH127 â'" 10 µH, CIN = 10 µF (ceramic), CL = 47 µF (ceramic), RSENSE = 50 , Q - 2SJ646, D - DE5PC3, L - CDRH127 - 10µH, CIN =10 µF(ceramic), CL= 47 µF (ceramic), RSENSE = IXYS
Original
IXD322
Showing first 20 results.