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Part : 2SJ378(TP) Supplier : Toshiba Manufacturer : America II Electronics Stock : 7,043 Best Price : - Price Each : -
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2SJ378 Datasheet

Part Manufacturer Description PDF Type
2SJ378 Toshiba P-Channel MOSFET Original
2SJ378 Toshiba Original
2SJ378 Toshiba Power MOSFETs Cross Reference Guide Original
2SJ378 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original
2SJ378 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SJ378 Toshiba TRANS MOSFET P-CH 60V 5A 3(2-8M1B) Scan
2SJ378 Toshiba Silicon P channel field effect transistor for high speed, high current switching applications, relay drive, DC-DC converter and motor drive applications Scan
2SJ378 Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (LL-pi-MOSV) Scan
2SJ378TP Toshiba 2SJ378 - TRANSISTOR 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power Original
2SJ378TP Toshiba TRANS MOSFET P-CH 60V 5A 3(2-8M1B) Scan
2SJ378(TP,Q) Toshiba 2SJ378 - MOSFET P-CH 60V 5A TPS Original

2SJ378

Catalog Datasheet MFG & Type PDF Document Tags

j378

Abstract: 2SJ378 2SJ378 2 PMOS (L -MOS) 2SJ378 DC-DC : mm 4V : RDS (ON) = 0.16 () : |Yfs| = 4.0S () : IDSS = -100A () (VDS = -60V) : Vth = -0.8-2.0V (VDS = -10VID = -1mA , -5A 3: MOS 1 2006-11-14 2SJ378 (Ta = 25 , 2006-11-14 2SJ378 Ta = 55 Ta = 55 3 2006-11-14 2SJ378 4 2006-11-14 2SJ378 , VDS (V) 5 2006-11-14 2SJ378 20070701-JA · · " " · ·
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Original
j378 J3-78 25IAR VDD-48V

J378

Abstract: 2SJ378 2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2SJ378 Relay Drive, DC-DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain-source ON resistance : RDS (ON) = 0.16 (typ.) l High forward transfer admittance : |Yfs| = 4.0 S , device. Please handle with caution. 1 2002-09-04 2SJ378 Electrical Characteristics (Ta = 25 , 2SJ378 3 2002-09-04 2SJ378 4 2002-09-04 2SJ378 5 2002-09-04 2SJ378
Toshiba
Original
Abstract: 2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L â'Ï'â'MOSV) 2SJ378 Relay Drive, DCâ'DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low , . 1 2004-07-06 2SJ378 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , . A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-06 2SJ378 3 2004-07-06 2SJ378 4 2004-07-06 2SJ378 5 2004-07-06 2SJ378 RESTRICTIONS Toshiba
Original

j378

Abstract: 2sj378 2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2SJ378 Relay Drive, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON resistance : RDS (ON) = 0.16 (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low , device. Please handle with caution. 1 2002-09-04 2SJ378 Electrical Characteristics (Ta = 25 , 2SJ378 3 2002-09-04 2SJ378 4 2002-09-04 2SJ378 5 2002-09-04 2SJ378
Toshiba
Original
Abstract: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2 -tt- M O S V ) 2SJ378 2SJ378 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE , w itho ut notice. 1998 01-14 1/5 - TOSHIBA 2SJ378 ELECTRICAL CHARACTERISTICS (Ta = 25 , ) -Year (Last Number of the Christian Era) £ C h 1998 01-14 2/5 - TOSHIBA 2SJ378 id , -30 DRAIN CURRENT Iq (A) DRAIN CURRENT Iß (A) 1998 01-14 3/5 - TOSHIBA 2SJ378 R d -
OCR Scan

j378

Abstract: 2SJ378 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2 2SJ378 Relay , . Please handle with caution. 1 2006-11-16 2SJ378 Electrical Characteristics (Ta = 25 , indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-16 2SJ378 3 2006-11-16 2SJ378 4 2006-11-16 2SJ378 Safe Operating Area 100 ID max (pulsed) * 10 ID max , 0.01 0.1 1 VDSS max 10 100 Drain-Source Voltage VDS (V) 5 2006-11-16 2SJ378
Toshiba
Original

j378

Abstract: 2SJ378 2SJ378 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2 2SJ378 Relay Drive, DC-DC Converter and Motor Drive Applications 4 V gate drive Low drain-source ON resistance High forward transfer admittance : RDS (ON) = 0.16 (typ.) : |Yfs| = 4.0 S (typ.) Unit: mm Low leakage , electrostatic sensitive device. Please handle with caution. 1 2002-06-27 2SJ378 Electrical , 2SJ378 3 2002-06-27 2SJ378 4 2002-06-27 2SJ378 5 2002-06-27 2SJ378
Toshiba
Original

2SJ378

Abstract: J378 2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2SJ378 Relay , . 1 2006-11-16 2SJ378 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-16 2SJ378 3 2006-11-16 2SJ378 4 2006-11-16 2SJ378 Safe Operating Area 100 100 s * ID max (pulsed , 100 VDS (V) 5 2006-11-16 2SJ378 RESTRICTIONS ON PRODUCT USE 20070701-EN · The
Toshiba
Original

j378

Abstract: 2SJ378 2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2SJ378 Relay , caution. 1 2004-07-06 2SJ378 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , package or lead (Pb)-free finish. 2 2004-07-06 2SJ378 3 2004-07-06 2SJ378 4 2004-07-06 2SJ378 Safe Operating Area 100 100 µs * ID max (pulsed) * 1 ms * 10 Drain , 2SJ378 RESTRICTIONS ON PRODUCT USE 030619EAA · The information contained herein is subject to
Toshiba
Original
Abstract: T O SH IB A 2SJ378 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2- tt-M O , . 1998 10-30 1/5 - T O SH IB A 2SJ378 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL TEST , 1998 10-30 2/5 - T O SH IB A 2SJ378 id - vos id - vos < n 55 Û à D O H , (A) Rd s (o n ) - id DRAIN CURRENT Id (A) 1998 10-30 3/5 - T O SH IB A 2SJ378 , SH IB A 2SJ378 rth â' tv PULSE WIDTH tw (s) SAFE OPERATING AREA BAS - Tch < Q  -
OCR Scan

2SJ378

Abstract: TOSHIBA 2SJ378 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-tt-MOSV) 2 S J , 2SJ378 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , (Starting from Alphabet A) â'" Year (Last Number of the Christian Era) £ 1998-01-14 2/5 TOSHIBA 2SJ378 , -0.3 -1 -3 -10 -30 drain current id (a) drain current id (a) 1998-01-14 3/5 TOSHIBA 2SJ378 , 2SJ378 rth - tv 0.001 100// SAFE OPERATING AREA 10m 100m 1 PULSE WIDTH tw (s) 100 -30 -10 < n
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OCR Scan
111NUUUCW

j378

Abstract: 2SJ378 2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2SJ378 Relay Drive, DC-DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain-source ON , . 1 2009-09-29 2SJ378 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , 2009-09-29 2SJ378 3 2009-09-29 2SJ378 4 2009-09-29 2SJ378 Safe Operating Area 100 , Drain-Source Voltage 10 100 VDS (V) 5 2009-09-29 2SJ378 RESTRICTIONS ON PRODUCT USE ·
Toshiba
Original

2SJ378

Abstract: TOSHIBA 2SJ378 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 S J 3 7 8 , contained herein is subject to change without notice. 1998-10-30 1/5 TOSHIBA 2SJ378 ELECTRICAL , Christian Era) 1998-10-30 2/5 TOSHIBA 2SJ378 id - VDS common source te = 25°c / 'â'"6 4 -3.5 , -0.3 -1 -3 -10 -30 drain current id (a) drain current id (a) 1998-10-30 3/5 TOSHIBA 2SJ378 RDS(ON) - Te , 'ž (nC) 1998-10-30 4/5 TOSHIBA 2SJ378 rth - tv 0.001 100// SAFE OPERATING AREA 10m 100m 1 PULSE WIDTH tw
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OCR Scan
961001EAA2

2SJ378

Abstract: TOSHIBA 2SJ378 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 S J , /5 TOSHIBA 2SJ378 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION , (Starting from Alphabet A) â'" Year (Last Number of the Christian Era) 2000-02-01 2/5 TOSHIBA 2SJ378 , -0.1 -0.3 -10 -30 drain current id (a) drain current id (a) 2000-02-01 3/5 TOSHIBA 2SJ378 RDS , 24 32 40 TOTAL GATE CHARGE Qâ'ž (nC) 2000-02-01 4/5 TOSHIBA 2SJ378 rth - tv Duty = t/T Rth(ch-a
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OCR Scan

K2312

Abstract: j378 -10 -10 -10 -10 10 10 10 10 10 10 10 10 10 10 10 10 10 Id R d s (ON) (A) 2SJ360 "2SJ377 ·2SJ378
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OCR Scan
K2312 K2314 T0-220 2SJ349 2SJ334 2SK2229 2SK2231 2SK2232

TLSV1060

Abstract: TC7MBL3244AFK Max A VDSS V ID VGS=4V VGS=10V 0.25 0.17 -60 -5 0.25 0.17 -60 -5 2SJ377 2SJ378 3
Toshiba
Original
TLSV1060 TC7MBL3244AFK US20 2sj668 03-3457-3405FAX TLRV1060 TLRMV1060 TLOV1060 TLYV1060

2SK2056

Abstract: 2SK1603 2 - -MOSIV Non-Promotion 2 2SJ360 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 , Himeji Himeji Himeji Himeji 2SJ378 A OK OK OK OK OK OK OK OK OK OK M/P OK OK 2Q
Toshiba
Original
2SJ239 2SJ241 2SK2056 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238

2sk3625

Abstract: 2SK3566 equivalent ) 2SJ315 (0.25) 2SJ377 (0.19) 2SJ378 (0.19) 2SJ438 (0.19) 2SK2229 (0.16) 2SK2231 (0.16) NTPC8206 , 0.73 -1 0.9 LSTM 0.5 0.7 -60 -5 20 PW-MOLD 0.16 2SJ378 -60 -5
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Original
2SK2962 2sk3625 2SK3566 equivalent NTPCA8008-H 2SK3868 2SK3878 2sj618 2SK2963 2SJ508 2SJ509 2SK3670 2SJ313

2sk4110

Abstract: 2SK4106 (0.024) TPCS8208(0.017) TPCS8213(0.013) 2SJ668(0.17) 2SJ681(0.17) 2SJ378(0.19) 2SJ669(0.17 , -220NIS 0.16 0.19 ­10 ­2.5 0.24 0.28 ­4 ­2.5 22 2SJ378 ­60 ­5 1.2 TPS
Toshiba
Original
2sk4110 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent BCE0017D S-167 BCE0017E

2SK3567 equivalent

Abstract: 2SK3569 equivalent ) TPC6109-H (0.059) TPCP8301 (0.031) TPCP8302 (0.033) 5.6 2SJ668 (0.17) 2SJ681 (0.17) 2SJ378 (0.19
Toshiba
Original
2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK3878 equivalent 2SK941 equivalent BCE0017F E-28831 BCE0017G
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