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2SD2130 Datasheet

Part Manufacturer Description PDF Type Ordering
2SD2130 N/A Japanese Transistor Cross References (2S)
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1 pages,
37.9 Kb

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2SD2130 N/A Catalog Scans - Shortform Datasheet
ri

1 pages,
52.33 Kb

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2SD2130 N/A Catalog Scans - Shortform Datasheet
ri

1 pages,
33.11 Kb

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2SD2130 N/A Catalog Scans - Shortform Datasheet
ri

1 pages,
31.58 Kb

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2SD2130 N/A Catalog Scans - Shortform Datasheet
ri

1 pages,
42.25 Kb

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2SD2130 N/A Transistor Substitution Data Book 1993
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1 pages,
33.13 Kb

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2SD2130 N/A Shortform Data and Cross References (Misc Datasheets)
ri

1 pages,
44.41 Kb

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2SD2130 Toshiba Silicon NPN transistor for micro motor drive and hammer drive applications, switching and power amplifier applications
ri

5 pages,
228.93 Kb

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2SD2130 Toshiba NPN Transistor
ri

5 pages,
207.53 Kb

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2SD2130 Toshiba TRANS DARLINGTON NPN 70V 4A 3(2-8H1A)
ri

5 pages,
179.76 Kb

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2SD2130

Catalog Datasheet Results Type PDF Document Tags
Abstract: 2SD2130 NPN 2SD2130 · · : mm : hFE = 2000 () (VCE = 2 V, IC = 1 A , 200 1 2010-03-10 2SD2130 (Ta = 25°C , 2SD2130 IC ­ VCE IC ­ VBE 6 6 400 300 4 3 IC 200 IC VCE = , = 500 5 0.3 0.5 1 3 3 IC 5 10 (A) 2010-03-10 2SD2130 rth , 5 10 · 30 50 100 VCE (V) 4 2010-03-10 2SD2130 · · · ... Original
datasheet

5 pages,
248.95 Kb

2SD2130 D2130 2SD2130 abstract
datasheet frame
Abstract: 2SD2130 NPN 2SD2130 · · : mm : hFE = 2000 () (VCE = 2 V, IC = 1 A , () (//) ( / ) () () 5 k 200 1 2006-11-20 2SD2130 (Ta = 25°C , () (: : ) No. 2 2006-11-20 2SD2130 IC ­ VCE IC ­ VBE 6 6 400 300 4 3 , ) 2006-11-20 2SD2130 rth (t) ­ tw PC ­ Ta 14 (1) Tc = Ta (W) (2) 100 (2 , VCEO max 3 5 10 · 30 50 100 VCE (V) 4 2006-11-20 2SD2130 ... Original
datasheet

5 pages,
217.32 Kb

2SD2130 D2130 2SD2130 abstract
datasheet frame
Abstract: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2130 , BASE 5 k 200 EMITTER 1 2003-02-04 2SD2130 Electrical Characteristics (Ta = 25°C , 2SD2130 IC ­ VCE IC ­ VBE 6 6 Common emitter 300 4 3 IC 200 Collector , 2SD2130 rth (t) ­ tw (°C/W) (single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink , 2003-02-04 2SD2130 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA is continually working to ... Original
datasheet

5 pages,
207.53 Kb

2SD2130 D2130 2SD2130 abstract
datasheet frame
Abstract: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2130 , BASE 5 k 200 EMITTER 1 2003-02-04 2SD2130 Electrical Characteristics (Ta = 25°C , 2SD2130 IC ­ VCE IC ­ VBE 6 6 Common emitter 300 4 3 IC 200 Collector , 2SD2130 PC ­ Ta 14 Curves should be applied in thermal limited area. PC (1) Infinite heat , (V) 4 2003-02-04 2SD2130 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA is ... Original
datasheet

5 pages,
154.78 Kb

D2130 2SD2130 2SD2130 abstract
datasheet frame
Abstract: TO SH IBA TOSHIBA TRANSISTOR 2SD2130 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 2SD2130 ±(J - SILICON NPN EPITAXIAL TYPE · · · High DC , IBA 2SD2130 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector Cut-off , 0 1 0 U 1 NJ 1 I'W 2SD2130 TO SH IBA 2SD2130 Rth (t) - tw Pc - Ta w o £ , 2001 05-24 - TO SH IBA 2SD2130 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA is ... OCR Scan
datasheet

5 pages,
228.93 Kb

2SD2130 2SD2130 abstract
datasheet frame
Abstract: TO SH IBA TOSHIBA TRANSISTOR 2SD2130 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS 2SD2130 ±(J - SILICON NPN EPITAXIAL TYPE · · · High DC , 11-05 - TO SH IBA 2SD2130 ELECTRICAL CHARACTERISTICS (Tc = 25°C) SYMBOL CHARACTERISTIC , < l_ dd < o o I'W 2SD2130 o U 1 TO SH IBA 2SD2130 Rth (t) - tw w o £ < in , 2001 11-05 - TO SH IBA 2SD2130 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA is ... OCR Scan
datasheet

5 pages,
228.97 Kb

2SD2130 2SD2130 abstract
datasheet frame
Abstract: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2130 , , etc). Equivalent Circuit COLLECTOR BASE 5 k 200 EMITTER 1 2006-11-21 2SD2130 , 2006-11-21 2SD2130 IC ­ VCE 6 Common emitter 5 Tc = 25°C 500 400 300 5 6 Common emitter VCE = 2 V , current IC (A) 3 2006-11-21 2SD2130 rth (t) ­ tw (°C/W) 14 Curves should be applied in , (A) 0.03 0.3 0.5 Collector-emitter voltage VCE (V) 4 2006-11-21 2SD2130 ... Original
datasheet

5 pages,
199.3 Kb

D2130 2SD2130 2SD2130 abstract
datasheet frame
Abstract: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2130 , BASE 5 k 200 EMITTER 1 2004-07-26 2SD2130 Electrical Characteristics (Ta = 25°C , 2004-07-26 2SD2130 IC ­ VCE IC ­ VBE 6 6 300 4 5 200 3 Collector current , 0.3 0.5 1 3 5 10 Collector current IC (A) 3 2004-07-26 2SD2130 rth (t , 2004-07-26 2SD2130 RESTRICTIONS ON PRODUCT USE 030619EAA 030619EAA · The information contained herein is ... Original
datasheet

5 pages,
179.75 Kb

2SD2130 D2130 2SD2130 abstract
datasheet frame
Abstract: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2130 , EMITTER 1 2006-11-21 2SD2130 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , 2006-11-21 2SD2130 IC ­ VCE IC ­ VBE 6 6 Common emitter 300 4 200 3 Collector , 3 5 10 (A) 2006-11-21 2SD2130 PC ­ Ta 14 Curves should be applied in thermal , Collector-emitter voltage 30 50 100 VCE (V) 4 2006-11-21 2SD2130 RESTRICTIONS ON PRODUCT ... Original
datasheet

5 pages,
173.52 Kb

2SD2130 D2130 2SD2130 abstract
datasheet frame
Abstract: TOSHIBA TOSHIBA TRANSISTOR 2SD2130 MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. 2SD2130 SILICON NPN EPITAXIAL TYPE Unit in mm 5.8 (�1 �1 PO W ER AM PLIFIER APPLICATIONS. 戏 � � High DC Current Gain : hFE = 2000 (Min.) (Vce = 2V, Ic = 1A) Low Saturation , TOSHIBA 2SD2130 ELECTRICAL CHARACTERISTICS (Ta = 25癈) SYMBOL CHARACTERISTIC Collector Cut-off , > H H H fO < O r H > o < o O I o < 2SD2130 TOSHIBA 2SD2130 Rth (t) - tw O � ... OCR Scan
datasheet

4 pages,
214.79 Kb

2SD2130 toshiba tc55 2SD2130 abstract
datasheet frame
Abstract: Darlington Transistors F1 W c E O 30V 40V 2SC982TM 2SC982TM 50V 60V 80V 100V 160V 250V 300V 400V 450V 0.3A 2SD1140 2SD1140 2SD1224 2SD1224 2SD1508 2SD1508 2SD1631 2SD1631 2SD2481 2SD2481 1.SA 2A 2SB677 2SB677 2SD687 2SD687 3A 2SB907 2SB907 2SD1222 2SD1222 2SD1658 2SD1658 2SD2088 2SD2088 2SB1067 2SB1067 2SD1509 2SD1509 2SD2208 2SD2208 2SB1411 2SB1411 2SD2206 2SD2206 2SB1457 2SB1457 2SB1617 2SB1617 2SD2480 2SD2480 2SD2129 2SD2129 2SB1495 2SB1495 2SD2257 2SD2257 4A SA 6A 2SD2130 2SD2204 2SD2204 2SD2131 2SD2131 2SB908 2SB908 2SD1223 2SD1223 2SB1381 2SB1381 2SD2079 2SD2079 2S01088 2S01088 2SD1410 2SD1410 2SD798 2SD798 2SD799 2SD799 2SD1409 2SD1409 2SB675 2SB675 2SD635 2SD635 7A 2SB1022 2SB1022 2SD1417 2SD1417 10A 1SA 30A 2SB674 2SB674 ... OCR Scan
datasheet

1 pages,
29.35 Kb

2SD1509 2SD1410 2SD2449 datasheet abstract
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Shortform Datasheet Search Results

Part Manufacturer Description Shortform Datasheet Ordering
2SD2130 N/A Silicon NPN Darlington Diode

Shortform Datasheet

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2SD2130 N/A Darlington, Medium Power

Shortform Datasheet

Buy

Fairchild Cross Reference Results

Fairchild Part Orderable Industry Part Manufacturer Type Family Description
BD677A BD677ASTU Buy 2SD2130 Buy Toshiba Close PowerBJT NPN Epitaxial Silicon Transistor
BD679A BD679ASTU Buy 2SD2130 Buy Toshiba Close PowerBJT NPN Epitaxial Silicon Transistor
KSE800 KSE800STU Buy 2SD2130 Buy Toshiba Close PowerBJT NPN Epitaxial Silicon Darlington Transistor
MJE800 MJE800STU Buy 2SD2130 Buy Toshiba Close PowerBJT NPN Epitaxial Silicon Darlington Transistor

On Semiconductor Cross Reference Results

On Semiconductor Part Industry Part Manufacturer Type
2N6038G Buy 2SD2130 Buy Toshiba Close
2N6039G Buy 2SD2130 Buy Toshiba Close
BD677AG Buy 2SD2130 Buy Toshiba Close
BD677G Buy 2SD2130 Buy Toshiba Close
BD679AG Buy 2SD2130 Buy Toshiba Close
BD679G Buy 2SD2130 Buy Toshiba Close
MJE800G Buy 2SD2130 Buy Toshiba Close
MJE802G Buy 2SD2130 Buy Toshiba Close
MJE803G Buy 2SD2130 Buy Toshiba Close

Misc. Cross Reference Results

Part Similar Part Notes
2SD2130 Buy 2SC4575 Buy
2SD2130 Buy 2SD1320 Buy
2SD2130 Buy 2SD1796 Buy