NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SD2130 | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
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| 2SD2130 | N/A | Transistor Substitution Data Book 1993 |
1 pages, |
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| 2SD2130 | Toshiba | NPN Transistor |
5 pages, |
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| 2SD2130 | Toshiba | Silicon NPN transistor for micro motor drive and hammer drive applications, switching and power amplifier applications |
5 pages, |
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| 2SD2130 | Toshiba | TRANS DARLINGTON NPN 70V 4A 3(2-8H1A) |
5 pages, |
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| 2SD2130 | N/A | Japanese Transistor Cross References (2S) |
1 pages, |
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| 2SD2130 | N/A | Catalog Scans - Shortform Datasheet |
1 pages, |
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| 2SD2130 | N/A | Catalog Scans - Shortform Datasheet |
1 pages, |
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| 2SD2130 | N/A | Catalog Scans - Shortform Datasheet |
1 pages, |
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| 2SD2130 | N/A | Catalog Scans - Shortform Datasheet |
1 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SD2130 NPN 2SD2130 · · : mm : hFE = 2000 () (VCE = 2 V, IC = 1 A , 200 1 2010-03-10 2SD2130 (Ta = 25°C , 2SD2130 IC VCE IC VBE 6 6 400 300 4 3 IC 200 IC VCE = , = 500 5 0.3 0.5 1 3 3 IC 5 10 (A) 2010-03-10 2SD2130 rth , 5 10 · 30 50 100 VCE (V) 4 2010-03-10 2SD2130 · · · ... | Original |
5 pages, |
2SD2130 D2130 2SD2130 abstract |
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| Abstract: 2SD2130 NPN 2SD2130 · · : mm : hFE = 2000 () (VCE = 2 V, IC = 1 A , () (//) ( / ) () () 5 k 200 1 2006-11-20 2SD2130 (Ta = 25°C , () (: : ) No. 2 2006-11-20 2SD2130 IC VCE IC VBE 6 6 400 300 4 3 , ) 2006-11-20 2SD2130 rth (t) tw PC Ta 14 (1) Tc = Ta (W) (2) 100 (2 , VCEO max 3 5 10 · 30 50 100 VCE (V) 4 2006-11-20 2SD2130 ... | Original |
5 pages, |
2SD2130 D2130 2SD2130 abstract |
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| Abstract: TOSHIBA 2SD2130 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2130 MICRO MOTOR DRIVE, HAMMER , _I 1 2001-05-24 TOSHIBA 2SD2130 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL , Time tf - 0.5 - 2 2001-05-24 TOSHIBA 2SD2130 IC - VCE IC - Vre COMMON EMITTER Tc = 25°C , 0.3 0.5 1 3 5 COLLECTOR CURRENT IQ (A) 10 3 2001-05-24 TOSHIBA 2SD2130 Rth(t) -tw PC - Ta 100 , 2SD2130 RESTRICTIONS ON PRODUCT USE _000707E 000707E • TOSHIBA is continually working to improve the quality ... | OCR Scan |
5 pages, |
2SD2130 2SD2130 abstract |
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| Abstract: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2130 , EMITTER 1 2006-11-21 2SD2130 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , 2006-11-21 2SD2130 IC VCE IC VBE 6 6 Common emitter 300 4 200 3 Collector , 3 5 10 (A) 2006-11-21 2SD2130 PC Ta 14 Curves should be applied in thermal , Collector-emitter voltage 30 50 100 VCE (V) 4 2006-11-21 2SD2130 RESTRICTIONS ON PRODUCT ... | Original |
5 pages, |
2SD2130 D2130 2SD2130 abstract |
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| Abstract: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2130 , BASE 5 k 200 EMITTER 1 2003-02-04 2SD2130 Electrical Characteristics (Ta = 25°C , 2SD2130 IC VCE IC VBE 6 6 Common emitter 300 4 3 IC 200 Collector , 2SD2130 rth (t) tw (°C/W) (single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink , 2003-02-04 2SD2130 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA is continually working to ... | Original |
5 pages, |
2SD2130 D2130 2SD2130 abstract |
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| Abstract: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2130 , BASE 5 k 200 EMITTER 1 2003-02-04 2SD2130 Electrical Characteristics (Ta = 25°C , 2SD2130 IC VCE IC VBE 6 6 Common emitter 300 4 3 IC 200 Collector , 2SD2130 PC Ta 14 Curves should be applied in thermal limited area. PC (1) Infinite heat , (V) 4 2003-02-04 2SD2130 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA is ... | Original |
5 pages, |
D2130 2SD2130 2SD2130 abstract |
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| Abstract: TOSHIBA 2SD2130 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2130 MICRO MOTOR DRIVE, HAMMER , ° _ < 3 - 5k O - 200Í1 EMITTER _I 1 2001-11-05 TOSHIBA 2SD2130 , 2SD2130 IC - VCE IC - Vre COMMON EMITTER Tc = 25°C 500 400 * * - l / /. , 0.3 0.5 1 3 5 COLLECTOR CURRENT IQ (A) 10 3 2001-11-05 TOSHIBA 2SD2130 Rth(t) -tw PC - Ta 100 , 2SD2130 RESTRICTIONS ON PRODUCT USE _000707E 000707E • TOSHIBA is continually working to improve the quality ... | OCR Scan |
5 pages, |
2SD2130 2SD2130 abstract |
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| Abstract: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2130 , BASE 5 k 200 EMITTER 1 2004-07-26 2SD2130 Electrical Characteristics (Ta = 25°C , 2004-07-26 2SD2130 IC VCE IC VBE 6 6 300 4 5 200 3 Collector current , 0.3 0.5 1 3 5 10 Collector current IC (A) 3 2004-07-26 2SD2130 rth (t , 2004-07-26 2SD2130 RESTRICTIONS ON PRODUCT USE 030619EAA 030619EAA · The information contained herein is ... | Original |
5 pages, |
D2130 2SD2130 2SD2130 abstract |
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| Abstract: TOSHIBA 2SD2130 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2130 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. • High DC Current Gain : hFE , subject to change without notice. 1997-02-03 1/4 TOSHIBA 2SD2130 ELECTRICAL CHARACTERISTICS (Ta = 25°C , Fall Time tf - 0.5 - 1997-02-03 2/4 TOSHIBA 2SD2130 IC - VCE IC - Vre < o COMMON EMITTER Tc = , 0.3 0.5 1 3 5 COLLECTOR CURRENT Iq (A) 10 1997-02-03 3/4 TOSHIBA 2SD2130 Rth(t) -tw PC - Ta ... | OCR Scan |
4 pages, |
2SD2130 toshiba tc55 2SD2130 abstract |
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| Abstract: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2130 , EMITTER 1 2010-03-10 2SD2130 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , substances in electrical and electronic equipment. 2 2010-03-10 2SD2130 IC VCE IC VBE , 3 5 10 (A) 2010-03-10 2SD2130 PC Ta 14 Curves should be applied in thermal , Collector-emitter voltage 30 50 100 VCE (V) 4 2010-03-10 2SD2130 RESTRICTIONS ON PRODUCT USE ... | Original |
5 pages, |
D2130 2SD2130 2SD2130 abstract |
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| Abstract: 2SC4588 2SC 4575 - -A 2SD1395 2SD1395 2SD2130 2SD1326 2SD1326 2SC 4576 fâ T 2SC3183 2SC3183 2SC 4577 H # 2SC3325 2SC3325 ... | OCR Scan |
1 pages, |
4588 4550 nec 4548 4580 2SD2151 m 4558 2SD1948 2sd1594 4583 2SC3514 NEC 4559 2SC3509 2SC3425 2SD1408 2SD2076 2SC3075 2SC3748 2SC3075 abstract |
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| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2SD2130 | N/A | Silicon NPN Darlington Diode | |
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| 2SD2130 | N/A | Darlington, Medium Power | |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| BD677A | BD677ASTU Buy | 2SD2130 Buy | Toshiba | Close | PowerBJT | NPN Epitaxial Silicon Transistor |
| BD679A | BD679ASTU Buy | 2SD2130 Buy | Toshiba | Close | PowerBJT | NPN Epitaxial Silicon Transistor |
| KSE800 | KSE800STU Buy | 2SD2130 Buy | Toshiba | Close | PowerBJT | NPN Epitaxial Silicon Darlington Transistor |
| MJE800 | MJE800STU Buy | 2SD2130 Buy | Toshiba | Close | PowerBJT | NPN Epitaxial Silicon Darlington Transistor |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| 2N6038G Buy | 2SD2130 Buy | Toshiba | Close |
| 2N6039G Buy | 2SD2130 Buy | Toshiba | Close |
| BD677AG Buy | 2SD2130 Buy | Toshiba | Close |
| BD677G Buy | 2SD2130 Buy | Toshiba | Close |
| BD679AG Buy | 2SD2130 Buy | Toshiba | Close |
| BD679G Buy | 2SD2130 Buy | Toshiba | Close |
| MJE800G Buy | 2SD2130 Buy | Toshiba | Close |
| MJE802G Buy | 2SD2130 Buy | Toshiba | Close |
| MJE803G Buy | 2SD2130 Buy | Toshiba | Close |
| Part | Similar Part | Notes |