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Part : 2SD2130(Q) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 1,750 Best Price : $2.15 Price Each : $2.63
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2SD2130 Datasheet

Part Manufacturer Description PDF Type
2SD2130 Toshiba TRANS DARLINGTON NPN 70V 4A 3(2-8H1A) Original
2SD2130 Toshiba NPN Transistor Original
2SD2130 N/A Japanese Transistor Cross References (2S) Scan
2SD2130 N/A Catalog Scans - Shortform Datasheet Scan
2SD2130 N/A Catalog Scans - Shortform Datasheet Scan
2SD2130 N/A Catalog Scans - Shortform Datasheet Scan
2SD2130 N/A Catalog Scans - Shortform Datasheet Scan
2SD2130 N/A Transistor Substitution Data Book 1993 Scan
2SD2130 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SD2130 Toshiba Silicon NPN transistor for micro motor drive and hammer drive applications, switching and power amplifier applications Scan

2SD2130

Catalog Datasheet MFG & Type PDF Document Tags

2SD2130

Abstract: D2130 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2130 , 200 EMITTER 1 2003-02-04 2SD2130 Electrical Characteristics (Ta = 25°C) Characteristics , .) Year of manufacture (Last decimal digit of the year of manufacture) 2 2003-02-04 2SD2130 , 0.5 1 Collector current 3 3 IC 5 10 (A) 2003-02-04 2SD2130 PC ­ Ta , 2SD2130 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the
Toshiba
Original
D2130

2SD2130

Abstract: TO SH IBA TOSHIBA TRANSISTOR 2SD2130 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS 2SD2130 ±(J - SILICON NPN EPITAXIAL TYPE · · · High DC , 11-05 - TO SH IBA 2SD2130 ELECTRICAL CHARACTERISTICS (Tc = 25°C) SYMBOL CHARACTERISTIC , < l_ dd < o o I'W 2SD2130 o U 1 TO SH IBA 2SD2130 Rth (t) - tw w o £ , 2001 11-05 - TO SH IBA 2SD2130 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is
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OCR Scan

D2130

Abstract: 2SD2130 2SD2130 NPN 2SD2130 · · : mm : hFE = 2000 () (VCE = 2 V, IC = 1 A , 200 1 2010-03-10 2SD2130 (Ta = 25 , 2SD2130 IC ­ VCE IC ­ VBE 6 6 400 300 4 3 IC 200 IC VCE = , = 500 5 0.3 0.5 1 3 3 IC 5 10 (A) 2010-03-10 2SD2130 rth , 5 10 · 30 50 100 VCE (V) 4 2010-03-10 2SD2130 · · ·
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Original
141TC

D2130

Abstract: 2SD2130 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2130 , BASE 5 k 200 EMITTER 1 2003-02-04 2SD2130 Electrical Characteristics (Ta = 25 , .) Year of manufacture (Last decimal digit of the year of manufacture) 2 2003-02-04 2SD2130 , Collector current 3 3 IC 5 10 (A) 2003-02-04 2SD2130 rth (t) ­ tw (°C/W , max 10 Collector-emitter voltage VCE 30 50 100 (V) 4 2003-02-04 2SD2130
Toshiba
Original

D2130

Abstract: 2SD2130 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2130 , EMITTER 1 2006-11-21 2SD2130 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , . 2 2006-11-21 2SD2130 IC ­ VCE IC ­ VBE 6 6 Common emitter 300 4 200 , 2SD2130 PC ­ Ta 14 Curves should be applied in thermal limited area. PC (1) Infinite heat , 2006-11-21 2SD2130 RESTRICTIONS ON PRODUCT USE 20070701-EN · The information contained herein is
Toshiba
Original

D2130

Abstract: 2SD2130 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2130 , BASE 5 k 200 EMITTER 1 2004-07-26 2SD2130 Electrical Characteristics (Ta = 25 , . 2 2004-07-26 2SD2130 IC ­ VCE IC ­ VBE 6 6 300 4 5 200 3 , 5 0.3 0.5 1 3 5 10 Collector current IC (A) 3 2004-07-26 2SD2130 , 2004-07-26 2SD2130 RESTRICTIONS ON PRODUCT USE 030619EAA · The information contained herein is
Toshiba
Original

D2130

Abstract: 2SD2130 2SD2130 NPN 2SD2130 · · : mm : hFE = 2000 () (VCE = 2 V, IC = 1 A , () (//) ( / ) () () 5 k 200 1 2006-11-20 2SD2130 (Ta = 25 , () (: : ) No. 2 2006-11-20 2SD2130 IC ­ VCE IC ­ VBE 6 6 400 300 4 3 , ) 2006-11-20 2SD2130 rth (t) ­ tw PC ­ Ta 14 (1) Tc = Ta (W) (2) 100 (2 , VCEO max 3 5 10 · 30 50 100 VCE (V) 4 2006-11-20 2SD2130
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Original
20070701-JA
Abstract: TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2130 MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. Unit in mm .3 MAX , w itho ut notice. 1997 02-03 1/4 - TOSHIBA 2SD2130 ELECTRICAL CHARACTERISTICS (Ta = 25 , - /IS - - 1997 02-03 2/4 - TOSHIBA 2SD2130 IC - V C E IC - V , COLLECTOR CURRENT le (A) 1997 02-03 3/4 - TOSHIBA 2SD2130 100 u CURVES SHOULD BE APPLIED IN -
OCR Scan
961001EAA2

2SD2130

Abstract: TO SH IBA TOSHIBA TRANSISTOR 2SD2130 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 2SD2130 ±(J - SILICON NPN EPITAXIAL TYPE · · · High , TO SH IBA 2SD2130 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector , < dd o 0 1 0 U 1 NJ 1 I'W 2SD2130 TO SH IBA 2SD2130 Rth (t) - tw Pc - Ta , 2001 05-24 - TO SH IBA 2SD2130 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is
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OCR Scan

D2130

Abstract: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2130 , , etc). Equivalent Circuit COLLECTOR BASE 5 k 200 EMITTER 1 2006-11-21 2SD2130 , 2006-11-21 2SD2130 IC ­ VCE 6 Common emitter 5 Tc = 25°C 500 400 300 5 6 Common emitter VCE = 2 V , current IC (A) 3 2006-11-21 2SD2130 rth (t) ­ tw (°C/W) 14 Curves should be applied in , (A) 0.03 0.3 0.5 Collector-emitter voltage VCE (V) 4 2006-11-21 2SD2130
Toshiba
Original
Abstract: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2130 , Circuit COLLECTOR BASE ≠5 kâ"¦ ≠200 â"¦ EMITTER 1 2004-07-07 2SD2130 Electrical , indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SD2130 IC â'" VCE , 10 Collector current IC (A) 3 2004-07-07 2SD2130 rth (t) â'" tw (°C/W) Curves , max 10 Collector-emitter voltage 30 VCE 50 100 (V) 4 2004-07-07 2SD2130 Toshiba
Original

toshiba tc55

Abstract: 2SD2130 TOSHIBA TOSHIBA TRANSISTOR 2SD2130 MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. 2SD2130 SILICON NPN EPITAXIAL TYPE Unit in mm 5.8 (¿3.1 ±0.1 PO W ER AM PLIFIER APPLICATIONS. Ï· · · High DC Current Gain : hFE = 2000 (Min.) (Vce = 2V, Ic = 1A) Low , w ith o u t notice. 0 0 1997 02-03 1/4 - TOSHIBA 2SD2130 ELECTRICAL CHARACTERISTICS , < 2SD2130 TOSHIBA 2SD2130 Rth (t) - tw O £ < Eh W w ö P c - Ta Cd 100 CURVES SHOULD
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OCR Scan
toshiba tc55
Abstract: T O S H IB A 2SD2130 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2 S D 2 1 30 Unit in mm MICRO M O TO R DRIVE, H A M M E R DRIVE APPLICATIONS. SW ITCHING APPLICATIONS. , c t t o c h a n g e w i t h o u t n o tic e . 1997 02-03 1/4 - T O S H IB A 2SD2130 , f H > o M 0 1 < o oc 2SD2130 T O S H IB A 2SD2130 PC - Ta Rth (t) â'" kw -
OCR Scan

D2130

Abstract: 2SD2130 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2130 , EMITTER 1 2010-03-10 2SD2130 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , substances in electrical and electronic equipment. 2 2010-03-10 2SD2130 IC ­ VCE IC ­ VBE , 3 5 10 (A) 2010-03-10 2SD2130 PC ­ Ta 14 Curves should be applied in thermal , Collector-emitter voltage 30 50 100 VCE (V) 4 2010-03-10 2SD2130 RESTRICTIONS ON PRODUCT USE
Toshiba
Original
Abstract: 2SD2130 SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. . Low Saturation Voltage SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER) Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. 8.3MAX. 5.8 0 3.1 ± 0 .1 3:- . High DC Current Gain : hpE=2000(Min.)(VCE=2V, Ic=lA) : VCE(sat , ICP IB Weight : 0.82g Tstg 882 2SD2130 ELECTRICAL CHARACTERISTICS (Ta , W * . U I - CJ °° n 2 h3 H W » (V ) 2SD2130 R E S IS T A N C E © CO I c^ «5 -
OCR Scan

2SD2449

Abstract: 2SD1509 Darlington Transistors F1 W c E O 30V 40V 2SC982TM 50V 60V 80V 100V 160V 250V 300V 400V 450V 0.3A 2SD1140 2SD1224 2SD1508 2SD1631 2SD2481 1.SA 2A 2SB677 2SD687 3A 2SB907 2SD1222 2SD1658 2SD2088 2SB1067 2SD1509 2SD2208 2SB1411 2SD2206 2SB1457 2SB1617 2SD2480 2SD2129 2SB1495 2SD2257 4A SA 6A 2SD2130 2SD2204 2SD2131 2SB908 2SD1223 2SB1381 2SD2079 2S01088 2SD1410 2SD798 2SD799 2SD1409 2SB675 2SD635 7A 2SB1022 2SD1417 10A 1SA 30A 2SB674
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OCR Scan
2SD2449 2SD2088(F) 2SD634 2SB1021 2SD1416 2SB673 2SD633 2SD1415
Abstract: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2130 Unit in mm 8.3MAX. 0 3.1 ± 0 . 1 M I C R O M O T O R D RIVE, H A M M E R DRIVE A P P L I C A T I O N S . SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. . High DC Current Gain : h p E = 2 0 0 0 ( M i n . ) (V^£=2V, I c = 1A) . Low Saturation , Weight : 0.82g BASE O - £ ~ 5 k il > 200Í1 _ J Û EM IT T E R 1071 2SD2130 E L E C T , a. fO o to j_ VB E (sat) 2SD2130 2S02130 R t h ( t) T R ANS IE NT TI IK K M A L -
OCR Scan

TT 2146

Abstract: tt 2144 - 26 0 s - Type No. 2SD2127 2SD2128 2SD2129 2SD2130 2SD2131 2SD2132 zou 2SD2133 2SD2136 2SD2142 2SD2143 , 2SD2144S 2SD2144 2SD2145 2SD2146 2SD 2147 2SD 2 1 4 8 2 SD 2 1 4 9 2SD 2150 2SD 2152 2SD 2153 2SD 2154 2SD 2 1 5 5 2SD 2 1 5 9 2SD 2161 2SD 2162 2SD 2163 2SD 2164 2SD 2165 2SD 2166 2SD 2167 2SD 2168 2SD 2169 2SD 2172 »· * s tt Manuf. X 2? « .h SANYO m 2SD1825 2SD1828 2SD1838 2SD1838 K TOSHIBA S B 0 S S ÎL S 2 2SD1414 , -A f £ » T 2SC2878
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OCR Scan
2SD1589 2SD1392 2SD2005 2SC4204 2SD741 2SD1671 TT 2146 tt 2144 2sc3792 2SD1952 2sd1020 2SC2532 2SC3327 2SC3666 2SC3422 2SC3420 2SD1548

f 4558

Abstract: 4558 2SD1948 2SC4351 2SD1326 2SC 4575 â¡ â'"A 2SD1395 2SD2130 2SD1326 2SC 4576 fâ T 2SC3183
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OCR Scan
2SC3075 2SC3748 2SD1408 2SD2076 2SC3421 2SC3425 f 4558 4558 fa 4558 2SC4588 4558, 4556 4558 nec 2SD1270 2SC4596 2SC3747

S1854

Abstract: s1854 a 2SD2012 2SD2075 2SD2076 2SD2079 2SD2089 2SD2092 2SD2095 2SD2125 2SD2127 2SD2129 2SD2130 2SD2131 2SD2155
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OCR Scan
2SC519A 2SC520A MP3006 MP3009 MP4003 MP4004 S1854 s1854 a mp4002 mp4001 S2055 2SA473 2SB553 2SA656A 2SB554 2SA657A 2SB595
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