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Part : 2SD2106-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 1,417 Best Price : $1.74 Price Each : $1.74
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2SD2106 Datasheet

Part Manufacturer Description PDF Type
2SD2106 Hitachi Semiconductor Silicon NPN Epitaxial Original
2SD2106 Hitachi Semiconductor Silicon NPN Darlington Transistor Original
2SD2106 Renesas Technology Silicon NPN Epitaxial Original
2SD2106 Renesas Technology Silicon NPN Epitaxial Original
2SD2106 N/A The Transistor Manual (Japanese) 1993 Scan
2SD2106 N/A Transistor Substitution Data Book 1993 Scan
2SD2106 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SD2106 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SD2106 N/A Japanese Transistor Cross References (2S) Scan
2SD2106 N/A Catalog Scans - Shortform Datasheet Scan

2SD2106

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SD2106 Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier Outline TO -220FM k Jà II 1 2 3 2 B as0 1â  2. C ollector 3. Em itter ° I t , 2SD2106 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating Unit Collector to base , , lB = 6 m A*1 lc = 6 A, lB = 60 m A*1 2SD2106 M a x im u m C o lle c to r D is s ip a tio n C u , ^ HITACHI 2SD2106 -
OCR Scan
2SD768
Abstract: 2SD2106 Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier Outline T O -2 2 0 F M 2SD2106 Absolute Maximum Ratings (Ta = 25 °C) Item Collector to base voltage , characteristic curve of 2SD768(K). 2 HITACHI 2SD2106 O 50 100 150 C a s e T e m p e ra , 10 C o lle c to r c u rre n t lc (A) HITACHI 3 2SD2106 ° 0.1 0 .2 0 .5 , e t (s) 4 HITACHI 2SD2106 When using this document, keep the following in mind: 1 -
OCR Scan
D-85622

OP103

Abstract: DSA003645 2SD2106 Silicon NPN Epitaxial ADE-208-922 (Z) 1st. Edition Sep. 2000 Application Low , 3 k (Typ) 200 (Typ) 3 2SD2106 Absolute Maximum Ratings (Ta = 25°C) Item Symbol , 6 mA*1 I C = 6 A, IB = 60 mA*1 V I C = 3 A, IB = 6 mA*1 I C = 6 A, IB = 60 mA*1 2SD2106 , emitter saturation voltage VBE (sat) (V) 2SD2106 Saturation Voltage vs. Collector Current 10 5 200 , 1000 2SD2106 Package Dimensions 10.0 ± 0.3 2.8 ± 0.2 7.0 ± 0.3 3.2 ± 0.2 Unit: mm
Hitachi Semiconductor
Original
OP103 DSA003645

Hitachi DSA002747

Abstract: 2SD2106 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter ID 3 k (Typ) 200 (Typ) 3 12 3 2SD2106 Absolute , A, IB = 60 mA* 1 See switching characteristic curve of 2SD768(K). 2 2SD2106 Maximum , ) 10 3 2SD2106 Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation , 1.0 10 100 1000 Time t (s) 4 2SD2106 When using this document, keep the
Hitachi
Original
Hitachi DSA002747

Hitachi DSA00279

Abstract: pcw30 2SD2106 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter ID 3 k (Typ) 200 (Typ) 3 12 3 2SD2106 Absolute , )2 2 2SD2106 Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) 30 iC , ) 200 100 0.1 0.2 0.5 1.0 2 5 Collector current IC (A) 10 3 2SD2106 Collector to , t (s) 4 2SD2106 When using this document, keep the following in mind: 1. This document may
Hitachi
Original
Hitachi DSA00279 pcw30

OP103

Abstract: 2SD2106 products contained therein. 2SD2106 Silicon NPN Epitaxial ADE-208-922 (Z) 1st. Edition September , . Collector 3. Emitter ID 3 k (Typ) 200 (Typ) 3 2SD2106 Absolute Maximum Ratings (Ta = 25 , 60 mA*1 2SD2106 Maximum Collector Dissipation Curve Area of Safe Operation 30 W 4.5 4.0 , voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) 2SD2106 Saturation Voltage vs , 1.0 Time t (s) 4 10 100 1000 2SD2106 When using this document, keep the
Renesas Technology
Original
Abstract: 2SD2106 Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier Outline TO -220FM 2SD2106 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to em itter voltage Emitter to base voltage C ollector current Collector peak current Collector , characteristic curve of 2SD768(K). o HITACHI 2SD2106 ? 30 - - - , ) HITACHI 3 2SD2106 4 HITACHI 2SD2106 When using this document, keep the following in -
OCR Scan
Abstract: t HITACHI 2SD2106 - Silicon NPN Epitaxial Low Frequency Power Amplifier Absolute Maximum Ratings (Ta = 25°C) Hem Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol Rating Unit V CBO V CEO V EBO 120 120 TO-220F M V V V A A W 2 7 6 ·c 'C(peaK) 1. Base 2. Collector 3 , eminer saturation voltage V3£ísaíl (V) Saturation Voltage vs. Collector Current HITACHI 2SD2106 -
OCR Scan
SD768 2SD21

OP103

Abstract: 2SD2106 2SD2106 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 3 k (Typ) 200 (Typ) 3 2SD2106 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO , = 6 A, IB = 60 mA*1 2SD2106 Maximum Collector Dissipation Curve Area of Safe Operation 30 , saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) 2SD2106 Saturation
Hitachi Semiconductor
Original
DSA003730

2SD2103

Abstract: 2SD2102 2SD2105 BÃL LF PA 120 120 10 2 30 lu 100 1000 20000 0 5 1. i> 2 5 0. 01 2SD2106 Hí LF PA 120 120 6 2 25 , , Da/R 2SD2105 (to-220fm) BCE, Da/R 2SD2106 (T0-220FM) BCE 2 SD 2107
-
OCR Scan
2SD2091 2SD2092 2SD2093 2SD2094 2SD2096 2SD2097 2SD2103 2SD2102 TO220FM SC-63

OP103

Abstract: 2SD2106 products contained therein. 2SD2106 Silicon NPN Epitaxial ADE-208-922 (Z) 1st. Edition September , . Collector 3. Emitter ID 3 k (Typ) 200 (Typ) 3 2SD2106 Absolute Maximum Ratings (Ta = 25 , 60 mA*1 2SD2106 Maximum Collector Dissipation Curve Area of Safe Operation 30 W 4.5 4.0 , voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) 2SD2106 Saturation Voltage vs , 1.0 Time t (s) 4 10 100 1000 2SD2106 When using this document, keep the
Renesas Electronics
Original
Abstract: products contained therein. 2SD2106 Silicon NPN Epitaxial ADE-208-922 (Z) 1st. Edition September , . Emitter ID 3 k (Typ) 200 (Typ) 3 12 3 2SD2106 Absolute Maximum Ratings (Ta = 25°C) Item , saturation voltage Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 2SD2106 Maximum , Collector current IC (A) 10 2SD2106 Collector to emitter saturation voltage VCE (sat) (V) Base to , 1m 10m 100m 1.0 10 100 1000 Time t (s) 2SD2106 When using this document Renesas Electronics
Original

2SC3444

Abstract: 2sb2025 2SD1620 2SD1626 2SD863 2SD1347 2SÜ1309 2SD1309 2SD2106 ¿ ¿ U iim fö T MATSUSHITA 2SD1499 2SÜ1264A
-
OCR Scan
2SD1195 2SD1137 2SD1194 2SD1446 2SD1119 2SC2873 2SC3444 2sb2025 d1830 2SD1963 2sd1633 2SD1612 2SD1586 2SD1587 2SD1588 2SD1589 2SD1590 2SD1592

2SD2106

Abstract: 2SD2106 Thermal resistance j-c (°C/W) Transient Thermal Resistance 10 3 TC = 25°C 1.0 0.3 0.1 1m 10m 100m 1.0 Time t (s) 10 100 1000 -
-
Original

2122L

Abstract: 2SD1878 - 259 - m « Type No. 2SD2091 2SD2092 2SD2093 2SD2094 2SD2095 2SD2096 ^ 2SD2097 , 2SD2098 2SD2099 2SD2100 2SD2102 2SD2105 2SD2104 2SD2106 2SD2107 y 2SD 2108 V 2SD 2109 2SD 2110 2SD 2111 2SD 2112 2SD 2113 2SD 2114- ^ 2SD 2115L/S 2SD 2116 2SD 2117 2SD 2118 ^ 2SD 2119 2SD 2120 2SD 2121L/S 2SD 2122L/S 2SD 2123L/S 2SD 2125 ^ 2SD 2126 *t Manuf. - A * 2 = n ID h m 0 TOSHIBA NEC m SANYO 2SC4547 0 tL HITACHI 'M ± ii FUJITSU 2SD1586 2SD167Ö 2SD1830 2SD1878 2SD1913 2SD1628
-
OCR Scan
2SD1275A 2SD1273 2SD1895 2SD1773 2SD1848 2SD1221 2122L 2SD1670 RN5006 2SD1414 2SD880 2SC3671

nec 2sc3157

Abstract: 2SD1296 2SD2113 2SD2128 2SD2094 2SD2106 2SD2104 2SD 1687 2SD 1688 2SD 1689 2SD 1690 iSu 159! 2SD 1692 2SD 1693
-
OCR Scan
2SC2883 2SD1406 2SD1296 2SD999 2SD2061 2SD1832 nec 2sc3157 2SD1317 2sd2239 2SD1660 2SD1198A 2SD1622 2SD1631

transistor 2sk

Abstract: transistor sp-10 4ac14 * Package Type No. code T O -220 2SD2104 2SD2105 FM 2SD2106 2SD2108 2SD2109 2SD2111 2SD2112 2SD2113 2SD2128
-
OCR Scan
transistor 2sk transistor sp-10 4ac14 transistor 2sk 70 2SK157 2sj318 transistor 2sk 12 2SD16 2SD1603 2SD1604 2SD1605 2SD1606 2SD1756

7054F

Abstract: BC564A 2sd1113k 2sd1126k 2sd1376k 2sd1436k 2sd1521 2sd1559 2sd1606 2sd1970 2sd1976 2sd2019 2sd2101 2sd2104 2sd2106
Hitachi Semiconductor
Original
7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual AC538 2SD755/56/56A

lvc16244

Abstract: BC240 2SD1606 2SD1970 2SD1976 2SD2019 2SD2101 2SD2104 2SD2106 2SD2124L 2SD768K 2SD970K 2SB1091 2SB1103 2SB1389
Hitachi Semiconductor
Original
HA13557A lvc16244 BC240 CBT1G125 2sk3174 LV2GT14A HAT2080R HAT2080T HAT2085R HAT2085T HAT2087R HAT2088R

2SC 8550

Abstract: 6020v4 2SD2106 2SB1032(K) 2SB1079 2SB1494 2SD1436(K) 2SD1559 Ratings VCEO IC (V) (A) -60 -4.0 -60
-
Original
2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B 2SK3390 2SA2080 2SA2081 2SC4260 2SC4261 2SC4262
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