500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : 2SD1997-TD-E Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 10,000 Best Price : $0.29 Price Each : $0.29
Part : 2SD1999-TD-E Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 1,000 Best Price : $0.25 Price Each : $0.25
Part : 2SD1992A-R(TA) Supplier : Panasonic Electronic Components Manufacturer : Bristol Electronics Stock : 7,380 Best Price : $0.2438 Price Each : $0.9375
Part : 2SD1994A-R(TA) Supplier : Panasonic Electronic Components Manufacturer : Bristol Electronics Stock : 2,000 Best Price : $0.1155 Price Each : $0.4125
Shipping cost not included. Currency conversions are estimated. 

2SD1991A Datasheet

Part Manufacturer Description PDF Type
2SD1991A Panasonic NPN Transistor Original
2SD1991A Panasonic Silicon NPN epitaxial planer type Original
2SD1991A N/A The Transistor Manual (Japanese) 1993 Scan
2SD1991A N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SD1991A0A Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN GP AMP 50VCEO MT-1 Original
2SD1991AQ Panasonic Silicon NPN Epitaxial Planar Type Transistor Original
2SD1991AR Panasonic Silicon NPN Epitaxial Planar Type Transistor Original
2SD1991AR Panasonic Silicon NPN Epitaxial Planar Type Transistor Original
2SD1991ARA Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN GP AMP 50VCEO MT-1 Original
2SD1991AS Panasonic Silicon NPN Epitaxial Planar Type Transistor Original
2SD1991AS Panasonic Silicon NPN Epitaxial Planar Type Transistor Original

2SD1991A

Catalog Datasheet MFG & Type PDF Document Tags

2SB1320A

Abstract: 2SD1991A Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1320A Unit: mm 0.15 0.65 max. 14.5±0.5 q High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 1.0 , Q R S hFE1 160 ~ 260 210 ~ 340 290 ~ 460 1 Transistor 2SD1991A PC - Ta , ­1 ­3 ­10 ­30 Emitter current IE (mA) ­100 Transistor 2SD1991A Cob - VCB
Panasonic
Original
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A (0.7) Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) (1.0) 3.5±0.1 Features · High forward current transfer ratio hFE · Low , with the RoHS Directive (EU 2002/95/EC). 2SD1991A PC Ta 500 60 IC VCE Ta = 25°C IB = 160 µA , SJC00234BED This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1991A Cob VCB Panasonic
Original

2SD1991A

Abstract: 2SD1991A(NPN) TO-92 Bipolar Transistors 1. EMITTER 2. COLLECTOR 3. BASE TO-92 Features High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC , =2mA CLASSIFICATION OF Rank Range hFE(1) Q 160-260 R 210-340 S 290-460 2SD1991A(NPN) TO-92 Bipolar Transistors Typical Characteristics 2SD1991A(NPN) TO-92 Bipolar Transistors -
-
Original
200MH
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A Unit: mm â  Features â'¢ High forward current transfer ratio hFE â'¢ Low collector-emitter saturation voltage VCE , complies with the RoHS Directive (EU 2002/95/EC). 2SD1991A PC  Ta IC  VCE 60 IB  VBE 1 , (EU 2002/95/EC). 2SD1991A NV  IC VCE = 10 V Ta = 25°C Function = FLAT 80 22 kâ Panasonic
Original

2SD1991A

Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SD1991A TO-92 TRANSISTOR (NPN) 1. EMITTER FEATURES High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value , 2SD1991A Jiangsu Changjiang Electronics Technology
Jiangsu Changjiang Electronics Technology
Original

2SB1320A

Abstract: 2SD1991A Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1320A Unit: mm 0.15 0.65 max. 14.5±0.5 q High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 1.0 , Q R S hFE1 160 ~ 260 210 ~ 340 290 ~ 460 1 Transistor 2SD1991A PC - Ta , ­1 ­3 ­10 ­30 Emitter current IE (mA) ­100 Transistor 2SD1991A Cob - VCB
Panasonic
Original

2SB1320A

Abstract: 2SD1991A This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 (4.0) 2.5±0.1 (0.8) ue pl d in an c se ed , 2SD1991A PC Ta IC VCE 60 Ta = 25°C 1 000 200 100 40 120 µA 100 µA 30 80 µA , /EC). 2SD1991A NV IC 240 10 200 8 6 4 160 VCE = 5 V f = 270 Hz 10 Rg
Panasonic
Original
2SB1320
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A (0.7) Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) (1.0) 3.5±0.1 Features · High forward current transfer ratio hFE · Low , with the RoHS Directive (EU 2002/95/EC). 2SD1991A PC Ta 500 60 IC VCE Ta = 25°C IB = 160 µA , SJC00234BED This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1991A Cob VCB Panasonic
Original

2SD1991A

Abstract: 2SB1320A Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) Features · High forward current transfer ratio hFE · Low collector-emitter saturation voltage VCE(sat) · Allowing supply with the radial , . Publication date: April 2003 SJC00234BED 1 2SD1991A PC Ta IC VCE 60 Ta = 25°C 1 000 , °C 240 180 120 60 0 - 0.1 -1 -10 Emitter current IE (mA) -100 2SD1991A NV
Panasonic
Original

2SD2037

Abstract: 2SD2001 1.4 35 100 80 40 320 4 1 1.5 4 0.4 2SD1991A «TF G A 60 50 0.1 0.4 1 20 160 460 10 0. 002 0. 5 0 , 2SD1991A 200* 10 -0.01 15 2SB1321A (MM) ECB 2SD1992A 200* IO -0. 002 m Ma* 150mV Gv=80dB/Rg
-
OCR Scan
2SD1988 2SD1989 2SD1990 2SD1993 2SD1994A 2SD1995 2SD2037 2SD2001 2sd2033 2sd2039

NEC 2SD1564

Abstract: 2SC3296 T T T T T if 2SC3253 2SD526 2SD743 2SD1134 2SD1991A 2SD1992A 2SC3581 2SD1778 2SC4778
-
OCR Scan
2SD1190 2SD1558 2SD837 2SD1276 2SD1217 2SD2409 NEC 2SD1564 2SC3296 2sd2394 2012 NEC 2sd1780 2SD1991R 2SD1986 2SD1987 2SD1991 2SD1992 2SD1994 2SD1996

2SD1010

Abstract: 2SD1993 Silicon Small Signal Transistors Application Functions SS-Mini Type (D1 ) I 2SB1462 # General-use Low Frequency Amplifiers and Others Package (No.) S-Mini Type (D5) ' 2SB1218A 2SD1819A : 2SB1219/A i 2SD1820/A Mini Type (D12) ! 2SB709A I 2SD601A i 2SB710/A i 2SD602/A New S Type (034) i 2SA1309A ! 2SC3311A 2SB1030/A i 2SD1423/A TO-92 (D46) M Type (D35) i 2SB642 I 2SD637 TO-92NL (D48) TO-92 L (047) Mini -Power Type (019) V ceo MT1 Type (037) ( 2SB1320A i 2SD1991A fr (MHz
-
OCR Scan
2SD2456 2SD2458 2SD1010 2SC2632 2SC2631 2sc5335 2SB1446 2sb788 2SD2216 2SA719/720 2SC1317/1318 2SB643/644 2SD638/639 2SA1619/A

2SC3998

Abstract: 2sc4640 - 199 - M « Type No. a « Manuf. H & SANYO Ã" 2£ TOSHIBA 0 m NEC 0 iL HITACHI « ± a FUJITSU te T MATSUSHITA H S MITSUBISHI â¡ â'" A ROHM 2SC 4773 â¡ â'"A 2SC4406 2SC4244 2SC4463 2SC3932 2SC 4774 » â¡ â'"A 2SC4407 2SC4250 2SC4463 2SC4670 2SC 4775 â¡ â'"A 2SC1815 2SD637 2SC 4776 â¡ â'"A 2SC4640 2SC1815 2SD637 2SC 4777 â¡ â'"A 2SC4640 2SC1815 2SD1991A 2SC 4778 â¡ â'"A 2SC4640 2SC1815 2SD1991 2SC 4779 â¡ â'"A ZòU4b4U ZÃUZ4Sà ¿Ã"UOJiiñ
-
OCR Scan
2SC4905 2SC4453 2SC3310 2SC3998 2SC4873 2SC2759 4793 2sc2555 2SD1546 4802 C4463 2SC4405 2SC4248 2SC4225 2SC3940

2SD2458

Abstract: 2SD2434 l 2SD637 (2SB1320A I 2SD1991A 50 100 â'¢160 -460 * 2 {2SB1219/A I 2SD1820/A f 2SB710/A I
-
OCR Scan
2SB1627 2SD2432 2SD2433 2SD1199 2SD2434 2SA1310 2SD2436 2SB1600 I2SD1819A I2SD2496 12SC3311A A2SB1582

2SB1335A

Abstract: 2SB1333 « tt »1 S & ft 80* -10 0. 001 3. 5* 2SD1991A (MT-1) ECB 2SB1320A 200* -10 0.01 15
-
OCR Scan
2SB1323 2SB1324 2SB1325 2SB1326 2SB1333 2SB1334 2SB1335A 2SD2021 2SB1365 2SB1353 2sb1355 2SB132ZA

2SB1320A

Abstract: 2SD1991A Transistor 2SB1320A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1991A Unit: mm 0.15 q High foward current transfer ratio hFE. Allowing supply with the radial taping. 1.0 q 0.8 s Features 1.05 2.5±0.1 (1.45) ±0.05 0.8 4.0 3.5±0.1 6.9±0.1 0.7 0.85 14.5±0.5 0.65 max. +0.1 0.45­0.05 (Ta=25°C) Ratings Unit Collector to base voltage VCBO ­60 V Collector to emitter voltage VCEO ­50
Panasonic
Original

2SD2436

Abstract: 2SD2434 C2SA1309A [ 2SC3311A f2SB642 12SD637 C 2SB1320A I 2SD1991A 50 100 â'¢160 -460 * 2 (2SB1219/A
-
OCR Scan
I2SD2216 2SB1597 2SC3312 2SD2529 2S897 D49 transistor HOA1404-2 High Vebo 12SD601A 12SD1820/A 1A2SB1582 I25C1317/1318 2SB643/644A

2SD2529

Abstract: 2SC3312 2SB766/A 1.2SC1383/1384 I 2SD874/A f 2SB1440 12SD2185 ( 2SA777 ( 2SB1320A I 2SD1991A ! 2SB1321AA i
-
OCR Scan
2SB1601 2SB1584 2sd661 2SB1322A 12SD2216 12SD1819A 2SA1791 12SC4656 2SA1748

2SB1320A

Abstract: 2SD1991A Transistors 2SB1320A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1991A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) Features (0.8) (1.0) 3.5±0.1 (0.7) 0.65 max. 14.5±0.5 (0.85) · High forward current transfer ratio hFE · Allowing supply with the radial taping Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -60 V Collector-emitter voltage (Base
Panasonic
Original

2SB1320A

Abstract: 2SD1991A Transistors 2SB1320A Silicon PNP epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 (1.45) ±0.05 0.8 1.0 I Features 3.5±0.1 For general amplification Complementary to 2SD1991A 0.85 14.5±0.5 0.65 max. · High forward current transfer ratio hFE · Allowing supply with the radial taping +0.1 2.5±0.5 1 Symbol Rating VCBO -60 V Collector to emitter voltage VCEO -50 V Emitter to base voltage VEBO -7 V Peak
Panasonic
Original

2SB1320A

Abstract: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1320A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1991A Features · High forward current transfer ratio hFE · Allowing supply with the radial taping 0.65 max. (0.85) Unit: mm (0.7) 6.9±0.1 (4.0) (1.0) 3.5±0.1 2.5±0.1 (0.8) (0.8) Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage
Panasonic
Original

an6512n

Abstract: mn1225 2SD2066 2SD2029 2SD1975 2SD1772/A 2SD 1776/A 2SD1819A 2SD2018 2SD1991A 2SD1991A 2SD1993 2SD1995 2SD2018
-
OCR Scan
MN1201A MN1220 MN1276 MN1280 MN12C201D MN12C261D an6512n mn1225 mn6520 MN6130 MN115P MN116P MN1201M MN1201S MN1202M
Showing first 20 results.