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Part : 2SD1819AQ(TX) Supplier : Panasonic Electronic Components Manufacturer : Chip One Exchange Stock : 21,000 Best Price : - Price Each : -
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2SD1819A Datasheet

Part Manufacturer Description PDF Type
2SD1819A Kexin Silicon NPN Epitaxial Planar Type Original
2SD1819A Panasonic Silicon NPN epitaxial planer type Original
2SD1819A Panasonic Silicon NPN epitaxial planer type Original
2SD1819A Panasonic NPN Transistor Original
2SD1819A TY Semiconductor Silicon NPN Epitaxial Planar Type - SOT-323 Original
2SD1819A N/A The Transistor Manual (Japanese) 1993 Scan
2SD1819A N/A Transistor Substitution Data Book 1993 Scan
2SD1819A N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SD1819A N/A Japanese Transistor Cross References (2S) Scan
2SD1819A0L Panasonic TRANS NPN GP AMP 50VCEO SMINI 3P Original
2SD1819A0L Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN GP AMP 50VCEO SMINI 3P Original
2SD1819AQL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN GP AMP 50VCEO SMINI 3P Original
2SD1819ARL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN GP AMP 50VCEO SMINI 3P Original
2SD1819ASL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN GP AMP 50VCEO SMINI 3P Original
2SD1819AZ Panasonic Silicon NPN Epitaxial Planar Type Transistor Original
2SD1819AZQ Panasonic Silicon NPN Epitaxial Planar Type Transistor Original
2SD1819AZR Panasonic Silicon NPN Epitaxial Planar Type Transistor Original
2SD1819AZS Panasonic Silicon NPN Epitaxial Planar Type Transistor Original

2SD1819A

Catalog Datasheet MFG & Type PDF Document Tags

2SD1819A

Abstract: transistor ZR CLASSIFICATION OF hFE Product-Rank REF. 2SD1819A-Q 2SD1819A-R 2SD1819A-S Range 160~260 210~340 , 2SD1819A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente 24 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain. Low collector to emitter saturation voltage VCE(sat). Complementary to 2SB1218A A L 3 3 , individually. Page 1 of 2 2SD1819A Elektronische Bauelemente 0.1A , 60V NPN Plastic-Encapsulate
SeCoS
Original
transistor ZR 2SD1819AR 2SD1819AS 200MH

ZR 720

Abstract: D 400 transistor 2SD1819A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 Dim FEATURES A High foward current transfer ratio hFE. Max A 3 B S Top View 2.200 1.150 1.350 C Low collector to emitter saturation voltage VCE(sat). 1.800 B L Complementary to 2SB1218A Min 0.800 1.000 V 3 1 BASE C 1.400 , informed individual Page 1 of 2 2SD1819A NPN Silicon Elektronische Bauelemente General
SeCoS
Original
ZR 720 D 400 transistor

sc 4145

Abstract: NEC 4164 2SD1271 2SC4849 2SC 4154 H g 2SC4211 2SC4116 2SD1819A 2SC4081 2SC 4155 = m 2SC4211 2SC4116 2SC4177 2SD1819A 2SC4081 2SC 4157 â'"' X s 2SC2749 2SC3171 2SC 4159 J * 2SD1772
-
OCR Scan
2SC3450 2SC237 2SC3965 2SC3170 2SC4667 sc 4145 NEC 4164 2SC4145 c3503 2sc4153 2SC421 2SC3153 2SC3535 2SC4743 2SD1738 2SC4742

2SB1218A

Abstract: 2SD1819A Transistor 2SD1819A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1218A Unit: mm 2.1±0.1 s Features 0.3­0 0.65 1 0.65 1.3±0.1 +0.1 0.425 3 2 Symbol Ratings Unit VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA , 1 2SD1819A Transistor PC - Ta IC - VCE 1200 Ta=25°C 50 160 120 80 40
Panasonic
Original

marking BQ 4

Abstract: 2SB1218AW BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES High forward current transfer ratio hFE Excellent HFE Linearity. 2SB1218AW Pb Lead-free Complements the 2SD1819A. APPLICATIONS For general purpose amplification. SOT-323 ORDERING INFORMATION Type No. Marking Package Code 2SB1218AW BQ1/BR1/BS1 SOT-323 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage
BL Galaxy Electrical
Original
marking BQ 4 BL/SSSTF034 3000/T

2SB1218A

Abstract: 2SD1819A Transistor 2SD1819A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1218A (0.425) Unit: mm +0.1 0.3Ð0.0 s Features 5û 1 2 0.2±0.1 q 2.1±0.1 q 3 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through , V 2SD1819A Transistor PC - Ta IC - VCE 1200 Ta=25°C 50 160 120 80 40
Panasonic
Original

2SB1218A

Abstract: 2SD1819A This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 ­0.0 0.15+0.10 ­0.05 1.25±0.10 2.1±0.1 0.9+0.2 ­0.1 1 2 0.2±0.1 · High forward current transfer ratio hFE · Low , /EC). 2SD1819A PC Ta IC VCE 120 80 40 1 000 140 µA 40 120 µA 100 µA 30
Panasonic
Original
SC-70

2SB1218A

Abstract: 2SD1819A Transistor 2SD1819A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1218A Unit: mm 2.1±0.1 s Features 0.3­0 0.65 1 0.65 1.3±0.1 +0.1 0.425 3 2 Symbol Ratings Unit VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA , 1 2SD1819A Transistor PC - Ta IC - VCE 1200 Ta=25°C 50 160 120 80 40
Panasonic
Original
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A Features · High forward current transfer ratio hFE · Low collector-emitter saturation voltage VCE(sat) · S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape pacing and the , with the RoHS Directive (EU 2002/95/EC). 2SD1819A PC Ta 200 60 IC VCE Ta = 25°C IB = 160 µA Panasonic
Original

2SB1218A

Abstract: 2SD1819A Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A (0.425) Unit: mm 0.3+0.1 ­0.0 0.15+0.10 ­0.05 1.25±0.10 5° 2.1±0.1 0.9±0.1 · High forward current transfer ratio hFE · Low collector-emitter saturation voltage VCE(sat) · S-Mini type package, allowing downsizing of the equipment and automatic insertion , date: April 2003 SJC00226BED 1 2SD1819A PC Ta IC VCE 120 80 40 1 000 140
Panasonic
Original

2SD1812

Abstract: 2SD1818 2SD1818 BB LF PA/MS PS* 60 60 3 1. 3 10 10 60 100 400 2 0.6 0.25 1.2 1.5 0.15 2SD1819A «TF G A 60 50 0.1 , -7 0 (Sâ'"M INI) BEC 2SD1819A 200* 10 -0.05 15 2SB1219 SCâ'"70 (Sâ'"MI NI ) BEC 2SD1820 200
-
OCR Scan
2SD1812 2SD1816 2SD1817 2SD1820A 2SD1821 2SD1821A

zr smd

Abstract: hFE CLASSIFICATION Marking Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SD1819A Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Peak collector current ICP 200 mA Collector current IC 100 mA
Kexin
Original
zr smd hFE CLASSIFICATION Marking marking ZR smd ZR
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A (0.425) Unit: mm 0.3+0.1 â'"0.0 0.15+0.10 â'"0.05 5˚ 0.2±0.1 2 d pla inc Pl ea ne lud se pla m d m es vis ne ain ain foll htt it d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c , Directive (EU 2002/95/EC). 2SD1819A PC  Ta IC  VCE 1 200 Ta = 25°C VCE = 10 V Ta = 25 Panasonic
Original

te 1819

Abstract: 2SD1878 2SC4118 2SC4118 2SC4U7 2SC4210 2SD1414 2SW693 2SD1251 2SD1261 2SC2594 2SD1819A 2SC4155 2SC4155 2SD1506
-
OCR Scan
2SD1406 2SD1267 2SD1250 2SC4331 2SD1223 2SC4723 te 1819 2SD1878 2SD1649 2sd1856 2sD1413 1815 2SD1813 2SD1814 2SD1667 2SD2107 2SD2105

2SB1218A

Abstract: 2SD1819A This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A (0.425) Unit: mm 0.3+0.1 ­0.0 0.15+0.10 ­0.05 1.25±0.10 2.1±0.1 0.9±0.1 5° M Di ain sc te on na tin nc ue e/ d · High forward current transfer ratio hFE · Low collector-emitter saturation voltage , 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1819A PC Ta IC VCE
Panasonic
Original
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A Features · High forward current transfer ratio hFE · Low collector-emitter saturation voltage VCE(sat) · S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape pacing and the , with the RoHS Directive (EU 2002/95/EC). 2SD1819A PC Ta 200 60 IC VCE Ta = 25°C IB = 160 µA Panasonic
Original
Abstract: Transistors IC SMD Type Product specification 2SD1819A Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Peak collector current ICP 200 mA Collector current IC 100 mA TY Semiconductor
Original
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SD1819A TRANSISTOR (NPN) FEATURES SOTâ'"323  High DC Current Gain  Complementary to 2SB1218A  Low Collector to Emitter Saturation Voltage APPLICATIONS  General Purpose Amplification 1. BASE MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter 2. EMITTER Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 Jiangsu Changjiang Electronics Technology
Original

mn171603

Abstract: an8523S /2SD1819A, etc. 25 23- - Pianaaonle
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OCR Scan
MN1873223 AN3815K AN3452FBS AN3893FHP UN9000 mn171603 an8523S Mini servo motor UN2000T 2SB710A/2SD602A MA165 MA786 MA723 N187324

2SC3998

Abstract: 2sc4640 2SC 4790 s s 2SC1621 2SD1819A 2SC3052 2SD2114K 2SC 4791 s iL 2SC4873 2SC4095 2SC4805 2SC
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OCR Scan
2SC1815 2SC4905 2SC4453 2SC3310 2SC3998 2SC2759 2sc4640 4793 2sd637 2sc2555 2SC4406 2SC4244 2SC4463 2SC3932 2SC4407 2SC4250

A1531A

Abstract: 2sc4780 1218A (NPN)2SD1819A 22 10 10 4 .7 4 .7 4 .7 500 c ''i 2.2 4 .7 10 8P E I/E L 6 S /8 S
-
OCR Scan
A1531A 2sc4780 R A745W 2SD1819 2SC4661 2SC4670 A141K A142A A142K A141W A142W MA741
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SB1218A TRANSISTOR (PNP) FEATURES SOTâ'"323  High DC Current Gain  Complementary to 2SD1819A APPLICATIONS  General Purpose Amplification MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter 1. BASE Value Unit VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -7 2. EMITTER V IC Collector Jiangsu Changjiang Electronics Technology
Original
Abstract: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SD1819A Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Peak collector current ICP 200 mA Collector current IC 100 mA -
OCR Scan
B1218A
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