500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : 2SC5086-O(TE85L,F) Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : 2SC5086-O,LF Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : $0.0782 Price Each : $0.0956
Part : 2SC5086-Y(TE85L) Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : 2SC5086-Y,LF Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : $0.0782 Price Each : $0.0956
Part : 2SC5086-O(TE85,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 3,900 Best Price : $1.16 Price Each : $1.42
Part : 2SC5086-O,LF Supplier : Toshiba Manufacturer : Chip1Stop Stock : 9,000 Best Price : $0.1290 Price Each : $0.2120
Part : 2SC5086-Y(TE85,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 4,600 Best Price : $1.16 Price Each : $1.42
Part : 2SC5086-Y,LF Supplier : Toshiba Manufacturer : Chip1Stop Stock : 9,000 Best Price : $0.1252 Price Each : $0.2731
Shipping cost not included. Currency conversions are estimated. 

2SC5086 Datasheet

Part Manufacturer Description PDF Type
2SC5086 Toshiba 2SC5086 - TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP RF Small Signal Original
2SC5086 Toshiba Japanese - Transistors Original
2SC5086 Toshiba Transistors Original
2SC5086 N/A Japanese Transistor Cross References (2S) Scan
2SC5086 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SC5086 Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan
2SC5086 Toshiba NPN Transistor Scan
2SC5086 Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan
2SC5086F Toshiba 2SC5086 - TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ESM, 3 PIN, BIP RF Small Signal Original
2SC5086(F) N/A Silicon NPN Transistor Scan
2SC5086(F) N/A Silicon NPN Transistor Scan
2SC5086F-O Toshiba 2SC5086 - TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ESM, 3 PIN, BIP RF Small Signal Original
2SC5086FT Toshiba 2SC5086 - TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-1B1A, TESM, 3 PIN, BIP RF Small Signal Original
2SC5086FT N/A NPN Transistor Scan
2SC5086FT Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan
2SC5086FT Toshiba TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan
2SC5086FTO Toshiba 2SC5086 - TRANSISTOR RF SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP RF Small Signal Original
2SC5086FT-O Toshiba 2SC5086 - TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-1B1A, TESM, 3 PIN, BIP RF Small Signal Original
2SC5086FTY Toshiba 2SC5086 - TRANSISTOR RF SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP RF Small Signal Original
2SC5086FT-Y Toshiba 2SC5086 - TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-1B1A, TESM, 3 PIN, BIP RF Small Signal Original
Showing first 20 results.

2SC5086

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SC5086 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 VHF~UHF Band Low Noise , : Cre is measured by 3 terminal method with capacitance bridge. 1 2007-11-01 2SC5086 Marking 2 2007-11-01 2SC5086 3 2007-11-01 2SC5086 S-Parameter ZO = 50 , Ta = 25 , 0.354 146.2 2.113 55.0 0.218 68.2 0.272 -52.1 4 2007-11-01 2SC5086 5 2007-11-01 2SC5086 6 2007-11-01 2SC5086 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL Toshiba
Original
Abstract: 2SC5086 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 VHF~UHF Band Low Noise Amplifier Applications â'¢ Low noise figure, high gain. â'¢ Unit: mm NF = 1.1dB, |S21e|2 = 11dB , measured by 3 terminal method with capacitance bridge. 1 2007-11-01 2SC5086 Marking 2 2007-11-01 2SC5086 3 2007-11-01 2SC5086 S-Parameter C ZO = 50 Ω, Ta = 25° VCE = 10 V , 2SC5086 5 2007-11-01 2SC5086 6 2007-11-01 2SC5086 RESTRICTIONS ON PRODUCT USE â Toshiba
Original
Abstract: TOSHIBA 2SC5086 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 0 8 6 VHF-UHF , . 591 TOSHIBA 2SC5086 hFE - IC Cob; Cre - VQB , without notice. 592 TOSHIBA 2SC5086 |S21el2 - VCE PC - Ta , . -40.9 -37.8 -34.1 -33.3 -34.0 -36.2 -39.3 -43.4 -47.8 -52.1 593 TOSHIBA 2SC5086 Sue VCE = , 594 TOSHIBA 2SC5086 Sue VCE = 10V IC = 20mA Ta = 25°C (UNIT : Ci) S21e VCE = 10V IC = 20mA Ta = -
OCR Scan
500MH
Abstract: 2SC5086 NPN 2SC5086 VHF~UHF · : mm : NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz , (/ ) 2-2H1A : 2.4 mg () ( ) ( ) 1 2007-11-01 2SC5086 (Ta = 25 , 3 hFE 5: O 6: Y M5 1 2 2 2007-11-01 2SC5086 hFE ­ IC Cob, Cre ­ , 2SC5086 2 S21e ­ VCE PC ­ Ta 200 10 (mW) 160 8 PC 120 S21e 2 , 0.354 146.2 2.113 55.0 0.218 68.2 0.272 -52.1 4 2007-11-01 2SC5086 S21e Toshiba
Original
Abstract: TOSHIBA 2SC5086 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 0 8 6 VHF-UHF , method with capacitance bridge. 1 2001-05-31 TOSHIBA 2SC5086 hFE - IC , °C 3 5 10 30 50 100 COLLECTOR CURRENT Iq (mA) 2 2001-05-31 TOSHIBA 2SC5086 |S21el2 - VCE PC - Ta , 55.0 0.218 68.2 0.272 -52.1 3 2001-05-31 TOSHIBA 2SC5086 Sue VCE = 10V IC = 5mA Ta = 25°C (UNIT , 2001-05-31 TOSHIBA 2SC5086 Sue VCE = 10V IC = 20mA Ta = 25°C (UNIT : Ù) S21e VCE = 10V IC = 20mA Ta = -
OCR Scan
Abstract: 2SC5086 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 VHF~UHF Band Low Noise Amplifier Applications â'¢ Low noise figure, high gain. â'¢ Unit: mm NF = 1.1dB, |S21e|2 = 11dB , 2014-03-01 2SC5086 Marking 2 2014-03-01 2SC5086 3 2014-03-01 2SC5086 S-Parameter , 55.0 0.218 68.2 0.272 â'52.1 4 2014-03-01 2SC5086 5 2014-03-01 2SC5086 6 2014-03-01 2SC5086 RESTRICTIONS ON PRODUCT USE â'¢ Toshiba Corporation, and its Toshiba
Original
Abstract: TOSHIBA 2SC5086 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 0 8 6 VHF-UHF , 2SC5086 hFE - IC , °C 3 5 10 30 50 COLLECTOR CURRENT Iq (mA) 100 1998-10-28 2/5 TOSHIBA 2SC5086 |S21el2 - VCE PC - , 0.354 146.2 2.113 55.0 0.218 68.2 0.272 -52.1 1998-10-28 3/5 TOSHIBA 2SC5086 Sue VCE = 10V IC = , Œ250 â'"j250 1998-10-28 4/5 TOSHIBA 2SC5086 Sue VCE = 10V IC = 20mA Ta = 25°C (UNIT : Ù) S21e VCE = -
OCR Scan
Abstract: TOSHIBA TOSHIBA TRANSISTOR 2SC5086 VHF~~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS 2SC5Q86 , . 1997 05-09 - 1/5 TOSHIBA 2SC5086 hFE - IC 400 300 200 VCu = 10V T a = 25°C 2 3 5 7 10 , subject to change w itho ut notice. 1997 05-09 - 2/5 TOSHIBA 2SC5086 |S21el2 12 VCE , TOSHIBA 2SC5086 S i le V C E = 10V IC = 5mA Ta -25°C (U N IT : O ) j50 S21e V C E = 10V IC = , °C (U N IT : O ) ± 180` -jlO -90° -jSO 1997 05-09 - 4/5 TOSHIBA 2SC5086 V -
OCR Scan
Transistor ge 718
Abstract: T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5086 VHF-UHF BAND LOW , ) 2SC5086 Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter , T O SH IB A 2SC5086 400 300 200 hFE - IC 100 < o EH 70 50 30 20 V C E = 10V Z , ithout notice. 1997 05-09 - 2/5 T O SH IB A 2SC5086 PC - Ta 3 2 O H 0 ¿ CO W , 2SC5086 S lle VCE = 10V IC = 5mA T a = 25°C (UNIT : O ) S21e VCE = 10V 10 = 5mA T a = 25°C S l2 e -
OCR Scan
sh 604
Abstract: 2SC5086 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 VHF~UHF Band Low Noise , : Cre is measured by 3 terminal method with capacitance bridge. 1 2007-11-01 2SC5086 Marking 2 2007-11-01 2SC5086 3 2007-11-01 2SC5086 S-Parameter ZO = 50 , Ta = 25 , 0.354 146.2 2.113 55.0 0.218 68.2 0.272 -52.1 4 2007-11-01 2SC5086 5 2007-11-01 2SC5086 6 2007-11-01 2SC5086 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation Toshiba
Original
MICROWAVE TRANSISTOR
Abstract: TOSHIBA 2SC5086 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC508 6 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS â'¢ Low Noise Figure, High Gain. â'¢ Unit in , IS J un Dì 00 n O O Ï TOSHIBA 2SC5086 PC - Ta < O 2¡ O H D 5 , 0.273 0.272 - 4 7 .8 - 5 2 .1 -3 9 .3 - 4 3 .4 1998 10-28 - 3/5 TOSHIBA 2SC5086 , 10-28 - 4/5 TOSHIBA 2SC5086 S lle S21e V C E = 10V V C E = 10V IC = 20mA T a = -
OCR Scan
Abstract: 2SC5086 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 VHF~UHF Band Low Noise Amplifier Applications · Low noise figure, high gain. · Unit: mm NF = 1.1dB, |S21e|2 = 11dB (f , bridge. 1 2003-03-19 2SC5086 Marking 2 2003-03-19 2SC5086 3 2003-03-19 2SC5086 S-Parameter ZO = 50 W, Ta = 25°C VCE = 10 V, IC = 5 mA Frequency (MHz) S11 Mag , 4 2003-03-19 2SC5086 5 2003-03-19 2SC5086 6 2003-03-19 2SC5086 Toshiba
Original
Abstract: MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 MT3S06S MT3S07S 2SC5066FT 2SC5086FT 2SC5091FT , 2SC5086FT 2SC5086 2SC5086FT 2SC5464 2SC5464FT MT3S04AS MT3S04AT MT3S03AS MT3S03AT VCO (2 , 2SC5084 _ 2SC5085 2SC5086 2SC5086FT 2SC5463 2SC5464 2SC5464FT 2SC5087 _ 2SC5088 , Low-voltage Package Product no. 2SC5084 2SC5085 2SC5086 2SC5086FT 2SC5087 2SC5088 2SC5064 2SC5065 , MT3S03AU MT3S04AU MT3S07U RF Amp USM 2SC5066 2SC5086 2SC5108 2SC5111 2SC5111 2SC5086 Toshiba
Original
2SC5110 2SC5108FT 2SK3075 equivalent 10 ghz transistor 2SK3078 MT3S04T MT6P06E MT6P03AE 2SC5090 2SC5095 MT3S06U 2SC5096FT MT3S06T MT3S07T
Abstract: 2SC5086 · SILICQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r V H F -U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . U n it in mm Low N oise F ig u re , H igh G ain , | COLLECTOR CURRENT Ic (m A) 2SC5086 2SC5086 |S 2 1 e l2 - V c e PC - Ta - - , - 3 4 .1 - 3 3 .3 - 3 4 .0 - 3 6 .2 - 3 9 .3 - 4 3 .4 - 4 7 .8 - 5 2 .1 588 2SC5086 S i le , 0 j2 5 0 -)5 0 589 2SC5086 S i le V C K =10V l e = 20m A T a = 25°C (U N IT : f i -
OCR Scan
Abstract: Reliability Tests Report Product Name: 2SC5086 Package Name: SSM 1. Thermal tests Test Item Heat resistance (Reflow) Heat resistance (Iron) Temperature cycling - Test Condition Peak , . Estimated Failure Rate Product Name Estimated failure rate 2SC5086 0.20 Fit or less Above , Rights Reserved. Heat-resistant Mounting Conditions Product Name: Package Name: 2SC5086 , ) Product Name : 2SC5086 Package Name : SSM Always store the Product under moisture sensitivity level Toshiba
Original
ED-4701
Abstract: * 2SC5085 * 2SC5086 2SC5087 * 2SC5088 RF Amp. Buffer Amp. * 2SC5089 * 2SC5090 +2SC5091 ·2SC5092 * 2SC5093 , *2SC5084 * 2SC5085 * 2SC5086 - - * 2SC5087 3SK240 (GaAs) * 2SC5088 3SK274 (GaAs) TA4100F , *2SC5066 * 2SC5086 2SC5108 *2 SC 5 1 11 1SV229 * 1SV270 * 1SV276 1SV257 * 1SV273 - Tuning - * NEW -
OCR Scan
2SC491 4007F SK192A SV153A Sv153 varicap diode 1SV226 1SS242 2SC2670 2SC2715 2SC2716 1SV128 1SV271 1SV172
Abstract: 2SC3357 2SC5432 2SC3356 2SC5093 2SC5086 2SC5086FT 2SC5084 2SC4995 2SC5141 2SC4988 2SC5758 -
Original
NESG250134 2SK3079 NESG260234 NE5510279 2SC5508 BFP450 transistor 2SC5066 BFP620 2SC5067 UPC2709 2SC5066 data sheet thn6601b THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z
Abstract: TOSHIBA HN2C10FT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N2C1OFT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS â'¢ Two devices are built in to the super-thin and ultra super mini (6 pins) package : TU6 MOUNTED DEVICES Q1/Q2 Three-pins (SSM) mold products are corresponded 2SC5086 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 3 V Collector Current ic 80 mA Base Current IB 40 mA -
OCR Scan
Abstract: TOSHIBA HN3C10FT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C1OFT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS â'¢ TWO devices are built in to the super-thin and ultra super mini (6 pins) package : TU6 MOUNTED DEVICES Q1/Q2 Three-pins (SSM) mold products are corresponded 2SC5086 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 3 V Collector Current ic 80 -
OCR Scan
1000MH
Abstract: TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C10FE H N3C1OFE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm · Two devices are built in to the super-thin and extreme super mini (6pins) package : ES6 p O o o rT ? -o 6o p: MOUNTED DEVICES Three-pins (SSM) mold products are corresponded M AXIM UM RATINGS (Ta = 25°C) Q1/Q2 2SC5086 -F o ? % 1 .2 1 0 .0 5 5 1 .6 1 0 .0 5 CHARACTERISTIC Collector-Base Voltage Collector-Emitter -
OCR Scan
961001EA
Abstract: TOSHIBA TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C18FT HN9C18FT V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS Unit in mm · TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 Q1 Q2 M O U N T E D DEVICES Three-pins (SSM) mold products are corresponded. M A X IM U M RATINGS (Ta = 25°C) 2SC5086 2SC5091 Q1 12 3 80 40 Q2 20 8 1.5 40 20 UNIT V V V mA mA mW °C °C SYMBOL CHARACTERISTIC Collector-Base Voltage v -
OCR Scan
961001EAA1 CB--10V 2000MH
Showing first 20 results.