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Part : 2SC458 Supplier : - Manufacturer : basicEparts Stock : 755 Best Price : - Price Each : -
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2SC458 Datasheet

Part Manufacturer Description PDF Type
2SC458 Hitachi Semiconductor Silicon NPN Epitaxial Original
2SC458 Hitachi Semiconductor Silicon NPN Epitaxial Original
2SC458 Hitachi Semiconductor Silicon NPN Epitaxial Original
2SC458 Renesas Technology Silicon NPN Epitaxial Original
2SC458 Renesas Technology Silicon NPN Epitaxial Original
2SC458 Renesas Technology Silicon NPN Epitaxial Original
2SC458 Renesas Technology Silicon NPN Epitaxial Original
2SC458 Various Russian Datasheets Transistor Original
2SC458 Continental Device India Semiconductor Device Data Book 1996 Scan
2SC458 Continental Device India TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),TO-92 Scan
2SC458 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan
2SC458 N/A The Transistor Manual (Japanese) 1993 Scan
2SC458 N/A Shortform Transistor Datasheet Guide Scan
2SC458 N/A Transistor Substitution Data Book 1993 Scan
2SC458 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SC458 N/A Vintage Transistor Datasheets Scan
2SC458 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SC458 N/A The Japanese Transistor Manual 1981 Scan
2SC458 N/A Transistor Shortform Datasheet & Cross References Scan
2SC458 N/A Basic Transistor and Cross Reference Specification Scan
Showing first 20 results.

2SC458

Catalog Datasheet MFG & Type PDF Document Tags

2sc458

Abstract: 2SC2308 2SC458, 2SC2308 Silicon NPN Epitaxial ADE-208-1043 (Z) 1st. Edition Mar. 2001 Application · , . Emitter 2. Collector 3. Base 3 2 1 2SC458, 2SC2308 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC458 2SC2308 Unit Collector to base voltage VCBO 30 55 V Collector to , Tstg ­55 to +150 ­55 to +150 °C 2 2SC458, 2SC2308 Electrical Characteristics (Ta = 25°C) 2SC458 2SC2308 Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Hitachi Semiconductor
Original
2SA1029 2SA1030 2sc458 transistor Hitachi DSA0076 2SC2310 D-85622

2SC458

Abstract: 2sc2308 2SC458,2SC2308 Silicon NPN Epitaxial HITACHI Application · · Low frequency am plifier , 3. Base u 1 267 2SC458,2SC2308 Absolute Maximum Ratings (Ta = 25°C) Item Collector to , 2SC458 30 30 5 100 -100 200 150 -5 5 to +150 2SC2308 55 50 5 100 -100 200 150 -5 5 to +150 Unit V V V mA mA mW °C °C 268 HITACHI 2SC458, 2SC2308 Electrical Characteristics (Ta ·= 25°C) 2SC458 , signal output admittance Note: Cob NF K hre hfe - - - - 1. The 2SC458 and 2SC2308 are
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OCR Scan
2SC458 B 2SC458 C

2sc458

Abstract: 2SC458 datasheet 2SC458 (LG), 2SC2310 Silicon NPN Epitaxial Application · Low frequency low noise amplifier · , 1 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC458 (LG , ­55 to +150 ­55 to +150 °C 2 2SC458 (LG), 2SC2310 Electrical Characteristics (Ta = 25°C) 2SC458 (LG) 2SC2310 Item Symbol Min Typ Max Min Typ Max Unit Test , saturation voltage Note: 1 VCE(sat) VCE = 12 V, IC = 2 mA µS 1. The 2SC458 (LG) and 2SC2310
Hitachi Semiconductor
Original
2SA1031 2SA1032 2SC458 datasheet Hitachi DSA00396

2SC458

Abstract: 2SC458 C,D 2SC458(K) Silicon NPN Epitaxial HITACHI Application · · Low frequency amplifier Medium speed switching Outline TO-92 (1 ) 1 1 1 1. Emitter 2. Collector 3. Base 3 2 u 1 278 2SC458 (K , 2SC458 (K) is grouped by hF E as follows. C D 100 to 200 160 to 320 250 to 500 HITACHI 279 2SC458 (K) Small Signal h Parameters Item Input impedance Voltage feedback ratio Current , 2 0 mA 280 HITACHI 2SC458 (K) Collector Cutoff Current vs. Collector to Base Voltage
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OCR Scan
2SC458 C,D

2SC1815

Abstract: 2sc372 2SC2001 2SC1675 2SC1841 2SC1674 2SC458 2SC454 2SC454 2SC1921 2SC454 2SC454 2SC458(LG) 2SD667 2SD667 , 2SC2274 2SC380 2SC1815 2SC372(G) 2SC2120 2SC2120 2SC2120 2SC1815 2SC503 2SC454 2SC458 2SC458(LG) 2SC1213A 2SC1213A 2SC458(LG) 2SD667 2SC829 2SC829 2SC829 2SC2497 2SC2497 2SC2497 2SC2497 2SC2497 2SC2497
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OCR Scan
2SC944 2SC387A 2SC2410 2SC4641 2SC1215 2SC1843 2sc1741 2sc2061 2sc2381 2sc1907 2SC2284 2SC945 2SC947 2SC948 2SC1959

2SC2308

Abstract: 2sc458 products contained therein. 2SC458, 2SC2308 Silicon NPN Epitaxial ADE-208-1043 (Z) 1st. Edition , Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458, 2SC2308 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC458 2SC2308 Unit Collector to base voltage VCBO , 150 150 °C Storage temperature Tstg ­55 to +150 ­55 to +150 °C 2 2SC458, 2SC2308 Electrical Characteristics (Ta = 25°C) 2SC458 2SC2308 Item Symbol Min Typ Max
Hitachi Semiconductor
Original

2SC2308

Abstract: 2SC458D 2SC458BTZ 2SC458CTZ 2SC458DTZ 2SC2308CTZ Quantity 2500 Shipping Container Hold Box, Radial Taping , 2SC458, 2SC2308 Silicon NPN Epitaxial REJ03G0681-0200 (Previous ADE-208-1043) Rev.2.00 Aug , 2SC458 30 30 5 100 ­100 200 2SC2308 55 50 5 100 ­100 200 Unit V V V mA mA mW Tj Tstg 150 ­55 to +150 150 ­55 to +150 °C °C 2SC458, 2SC2308 Electrical Characteristics (Ta = 25°C) Collector to base breakdown voltage V(BR)CBO Min 30 2SC458 Typ -
Renesas Technology
Original
PRSS0003DA-A 2SC458D SC-43A

2sc458

Abstract: 2SC2308 HITACHI 2SC458, 2SC2308 SILICON NPN EPITAXIAL LOW FREQUENCY AMPLIFIER Complementary pair with , dissipation junction temperature Storage temperature Symbol Vl B O V ceo 2SC458 30 30 5 100 -1 0 0 200 150 -5 , =25"C) Item Collector to base breakdown voltage Symbol l e s t Condition 2SC458 min. 30 30 5 - - iypmax. - , ) to 200 C usin o 1 \ m îf l h o if l ü 1 I See characteristic curves of 2SC458 j-Q and 2SC2310 except for the followings. HITACHI 2SC458, 2SC2308 NCHSE FIGURE VS. COLLECTOR
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OCR Scan
2SC230X 2SC45 2SC23

2SC2291

Abstract: 2SC458LG B 2SC1740 2SC 1638 *±® 2SC1252 2 SC 1639 â¡ â'"A 2SC2210 2SC380TM 2SC945 2SC458 2SC1684 2SC1740 2SC 1640 Oâ'"A 2SC2210 2SC1815ÃL) 2SC1842 2SC458LG 2SC2634 2SC1740 2 SC 1641
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OCR Scan
2SC2291 2SC4453 2SC2412K 2SD1486 2SC1345 2SC1685 2SC458LG B 2SC1740 R 2SC2104 2SC891 2SC2480 2SC4911K

2SC458

Abstract: 2sc2310 2SC458 (LG), 2SC2310 Silicon NPN Epitaxial Application · Low frequency low noise amplifier · Complementary pair with 2SA1031 and 2SA1032 Outline 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = , VCEO VEBO IC IE PC Tj Tstg 2SC458 (LG) 30 30 5 100 ­100 200 150 ­55 to +150 2SC2310 55 50 5 100 ­100 200 150 ­55 to +150 Unit V V V mA mA mW °C °C 2 2SC458 (LG), 2SC2310 Electrical Characteristics (Ta = 25°C) 2SC458 (LG) Item Collector to base breakdown voltage Collector to emitter breakdown
Hitachi
Original
Hitachi DSA002755

2SC458

Abstract: Hitachi DSA002755 2SC458(K) Silicon NPN Epitaxial Application · Low frequency amplifier · Medium speed switching Outline 2SC458 (K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to , 10 V I C = IB1 = ­IB2 = 20 mA, VCC = 5 V 1. The 2SC458 (K) is grouped by hFE as follows. C 160 to 320 D 250 to 500 2 2SC458 (K) Small Signal h Parameters Item Input impedance Voltage , × 10 ­6 Test conditions VCE = 5 V, IC = 0.1 mA, f = 270 Hz 3 2SC458 (K) 4 2SC458 (K
Hitachi
Original

2SC2308

Abstract: 2sc458 2SC458, 2SC2308 Silicon NPN Epitaxial Application · Low frequency amplifier · Complementary , 2SC458, 2SC2308 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC458 2SC2308 Unit , 2SC458, 2SC2308 Electrical Characteristics (Ta = 25°C) 2SC458 2SC2308 Item Symbol Min , ) VCE = 12 V, IC = 2 mA µS 1. The 2SC458 and 2SC2308 are grouped by h FE as follows. B C D 2SC458 100 to 200 160 to 320 250 to 500 2SC2308 100 to 200 160 to 320 - See
Hitachi Semiconductor
Original
Hitachi DSA00395

2SC2310

Abstract: lg Logo products contained therein. 2SC458 (LG), 2SC2310 Silicon NPN Epitaxial ADE-208-1044A (Z) 2nd , 2. Collector 3. Base 3 2 1 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC458 (LG) 2SC2310 Unit Collector to base voltage VCBO 30 55 V , temperature Tstg ­55 to +150 ­55 to +150 °C 2 2SC458 (LG), 2SC2310 Electrical Characteristics (Ta = 25°C) 2SC458 (LG) 2SC2310 Item Symbol Min Typ Max Min Typ Max
Hitachi Semiconductor
Original
lg Logo

2SC458

Abstract: 2SC2308 2SC458, 2SC2308 Silicon NPN Epitaxial Application · Low frequency amplifier · Complementary pair with 2SA1029 and 2SA1030 Outline 2SC458, 2SC2308 Absolute Maximum Ratings (Ta = 25 , IC IE PC Tj Tstg 2SC458 30 30 5 100 ­100 200 150 ­55 to +150 2SC2308 55 50 5 100 ­100 200 150 ­55 to +150 Unit V V V mA mA mW °C °C 2 2SC458, 2SC2308 Electrical Characteristics (Ta = 25°C) 2SC458 , admittance Note: B 2SC458 2SC2308 100 to 200 100 to 200 Cob NF hie hre hfe hoe 1. The 2SC458 and 2SC2308
Hitachi
Original

2sc458

Abstract: 2SC458KB Max 1.27 2.54 Ordering Information Part Name 2SC458KBTZ-E 2SC458KCTZ-E Quantity 2500 , 2SC458(K) Silicon NPN Epitaxial REJ03G0680-0200 (Previous ADE-208-1045) Rev.2.00 Aug , 100 ­100 200 Unit V V V mA mA mW Tj Tstg 150 ­55 to +150 °C °C 2SC458(K , 10 mA, VCC = 10 V IC = IB1 = ­IB2 = 20 mA, VCC = 5 V 1. The 2SC458 (K) is grouped by hFE as , V, IC = 0.1 mA, f = 270 Hz 2SC458(K) Main Characteristics Switching Time Test Circuit ton
Renesas Technology
Original
2SC458KB

2SD428

Abstract: 2sc458 63 9 S m. 2SC4454 2SC752(G)TM 2SC 640 s m 2SC1815 2SC458 2SC828 2SC1740 2SC 641 (K) S ¡L , 2SD818 23C 643A Xi. ñ 2SC 644 - e T 2SC693 2SC1923 2SC1S42 2SC458(LG) 2SC2634 2SC1740 , 2SC1815 2SC458(LG) 2SC1740 2SC 650 S iL 2SC1570 2SC1815 2SC458(LG) 2SC1740 2SC 651 s m , / B m 2SU1923 2SC 655 / fâ T 2SC1815 2SC1840 2SC458 2SC2320 2SC1740 2SC 656 KS T 2SC2999 2SC1923 2SC458 2SC738 2SC1809 2SC 657 . V- 2SC2999 2SC1923 2SC535 2SC1047 2SC1809 2SC 658 H a
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OCR Scan
2SD428 2SC930 2SC1275 2SC382 2SC1906 2SC2926 2SC654 2SC386A 2SC4455 2SDS13 2SC1359 2SC2058 2SD1712

2SC458

Abstract: 2SC458 C,D 2SC458 (LG), 2SC2310 Silicon NPN Epitaxial HITACHI Application · · L o w frequency lo w noise , 1 1. Emitter 2. Collector 3. Base 271 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = , 2SC458 (LG), 2SC2310 Electrical Characteristics (Ta = 25°C) 2SC458 (LG) Item Collector to base , - Ks - - - - u s Note: 1. The 2SC458 (LG) and 2SC2310 are grouped by hF E as follows. B C D 160 to 320 160 to 320 250 to 500 - 2SC458 (LG) 100 to 200 2SC2310
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OCR Scan

2SC2310

Abstract: 2sc458 2SC458 (LG), 2SC2310 Silicon NPN Epitaxial ADE-208-1044A (Z) 2nd. Edition Mar. 2001 , 2 1 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC458 (LG , ­55 to +150 ­55 to +150 °C 2 2SC458 (LG), 2SC2310 Electrical Characteristics (Ta = 25°C) 2SC458 (LG) 2SC2310 Item Symbol Min Typ Max Min Typ Max Unit Test , saturation voltage Note: 1 VCE(sat) VCE = 12 V, IC = 2 mA µS 1. The 2SC458 (LG) and 2SC2310
Hitachi Semiconductor
Original

2SC1815

Abstract: 2SC410 - 81 - * » * * * * * * » * * * * ♦ * * * * * ♦ * ♦ * * * ♦ * » ♦ * S « Type No. tt « Manuf. H SANYO 36 3? TOSHIBA 0 a NEC B ÃZ HITACHI » ± a FUJITSU fâ T MATSUSHITA 3. * MITSUBISHI â¡ - A ROHM 2 SC 178 'J- 2SC1359 2SC 179 B iL 2SC458 2SC1359 2SC 180 m 2SC458 2SC1359 2SC 181 0 il 2SC458 2SC1359 2SC 182 «" 0 m 2SC1815 2SC828 2SC1740 2SC 183 > 0 m 2SC1815 2SC454 2SC829 2SC2410 2SC Ì83A B S 2SC1815 2SC454 ¿60«¿S 2SC410 2SC 184 ' B S
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OCR Scan
2SC460 2SC3311A 2SC461 2sc1815 type 2sc1856 NEC 2SC1815 2sc458 nec 2SC185 2SC730 2SC2258 2SC2960

SC-1303

Abstract: 2SC1312 2SC 1310 K ¿00404U 2SC2458 tc ver* ÇA 2SC1740S 2SC 1311 H m 2SC4640 2SC2458 2SC945 2SC458 2SC2603 2SC1740S 2 SC 1312 H m 2SC4640 2SC732TM 2SC1842 2SC458(LG) 2SC1327 2SC2320L 2SC1740LN 2SC 1313 = « 2SC4641 2SC732TM 2SC1843 2SC458(LG) 2SC1328 2SC2320L 2SC1740LN 2SC 1314 H « 2SC998 2SC2889
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OCR Scan
2SC1303 2SC555 2SC2347 2SC1476 SC-1303 2SC1312 2sc1313 2SC1335 2SC994 2SC2329 2SC2851 2SC782 2SC1678 ZSC2098

2sc458 transistor

Abstract: 2SC2310 products contained therein. 2SC458 (LG), 2SC2310 Silicon NPN Epitaxial ADE-208-1044A (Z) 2nd , 2. Collector 3. Base 3 2 1 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC458 (LG) 2SC2310 Unit Collector to base voltage VCBO 30 55 V , temperature Tstg ­55 to +150 ­55 to +150 °C 2 2SC458 (LG), 2SC2310 Electrical Characteristics (Ta = 25°C) 2SC458 (LG) 2SC2310 Item Symbol Min Typ Max Min Typ Max
Hitachi Semiconductor
Original
Abstract: developed or manufactured by or for Renesas Electronics. 2SC458, 2SC2308 Silicon NPN Epitaxial , = 25°C) Symbol 2SC458 2SC2308 Unit Collector to base voltage Item VCBO 30 , .2.00 Aug 10, 2005 page 1 of 6 2SC458, 2SC2308 Electrical Characteristics (Ta = 25°C) 2SC458 Item , â'" 11.0 hoe Small signal output admittance Note: 1. The 2SC458 is grouped by hFE as follows. B C D 2SC458 100 to 200 160 to 320 250 to 500 Rev.2.00 Aug 10, 2005 page 2 of 6 µS Renesas Technology
Original

2SC458D

Abstract: 2SC2308 2SC458, 2SC2308 Silicon NPN Epitaxial REJ03G0681-0200 (Previous ADE-208-1043) Rev.2.00 Aug , 2SC458 30 30 5 100 ­100 200 2SC2308 55 50 5 100 ­100 200 Unit V V V mA mA mW Tj Tstg 150 ­55 to +150 150 ­55 to +150 °C °C 2SC458, 2SC2308 Electrical Characteristics (Ta = 25°C) Collector to base breakdown voltage V(BR)CBO Min 30 2SC458 Typ - , capacitance Noise figure Symbol - 11.0 hoe Small signal output admittance Note: 1. The 2SC458 is
Renesas Technology
Original
2SC458 Box

2SC2308

Abstract: 2SC458 . 2SC458, 2SC2308 Silicon NPN Epitaxial REJ03G0681-0200 (Previous ADE-208-1043) Rev.2.00 Aug , 2SC458 30 30 5 100 ­100 200 2SC2308 55 50 5 100 ­100 200 Unit V V V mA mA mW Tj Tstg 150 ­55 to +150 150 ­55 to +150 °C °C 2SC458, 2SC2308 Electrical Characteristics (Ta = 25°C) Collector to base breakdown voltage V(BR)CBO Min 30 2SC458 Typ - , capacitance Noise figure Symbol - 11.0 hoe Small signal output admittance Note: 1. The 2SC458 is
Renesas Technology
Original
Showing first 20 results.