NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SC4213 | N/A | Transistor Substitution Data Book 1993 |
1 pages, |
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| 2SC4213 | N/A | The Transistor Manual (Japanese) 1993 |
2 pages, |
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| 2SC4213 | Toshiba | NPN Transistor |
5 pages, |
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| 2SC4213 | Toshiba | NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHIG APPLICATIONS) |
4 pages, |
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| 2SC4213 | Toshiba | TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) |
5 pages, |
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| 2SC4213 | N/A | Transistor Shortform Datasheet & Cross References |
1 pages, |
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| 2SC4213 | N/A | Japanese Transistor Cross References (2S) |
1 pages, |
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| 2SC4213A | Toshiba | Silicon NPN Epitaxial Type Transistor |
5 pages, |
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| 2SC4213B | Toshiba | Silicon NPN Epitaxial Type Transistor |
5 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SC4213 NPN (PCT) 2SC4213 : mm · : VEBO = 25 V () · Reverse hFE , () (//) (/) () () 1 2007-11-01 2SC4213 (Ta = 25°C , 2007-11-01 2SC4213 IC VCE () 50 Ta = 25°C (mA) 120 30 100 80 -8 IC , ) 300 0.3 1 3 3 10 IC 30 100 (mA) 2007-11-01 2SC4213 Cob VCB , 2007-11-01 2SC4213 · · · · "" · · · ... | Original |
5 pages, |
2SC4213 2SC4213 abstract |
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| Abstract: 2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications · Unit: mm High emitter-base voltage: VEBO = 25 V (min) · High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA) · Low on resistance: RON = 1 (typ.) (IB , 2SC4213 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min , : 350~1200 2 2003-03-27 2SC4213 3 2003-03-27 2SC4213 4 2003-03-27 2SC4213 ... | Original |
5 pages, |
2SC4213 2SC4213 abstract |
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| Abstract: 2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit: mm · High emitter-base voltage: VEBO = 25 V (min) · High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA) · Low on resistance: RON = 1 (typ.) (IB , 2SC4213 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min , 2SC4213 3 2007-11-01 2SC4213 4 2007-11-01 2SC4213 RESTRICTIONS ON PRODUCT USE ... | Original |
5 pages, |
2SC4213 2SC4213 abstract |
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| Abstract: TOSHIBA 2SC4213 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 SC4213 SC4213 FOR MUTING AND SWITCHING APPLICATIONS High Emitter-Base Voltage : VebO = 25V (Min.) High Reverse hjrg Low On , contained herein is subject to change without notice. 1998-12-17 1/4 TOSHIBA 2SC4213 ELECTRICAL , Classification A : 200-700, B : 350-1200 1998-12-17 2/4 TOSHIBA 2SC4213 IC - VCE 0 2 4 6 8 10 , 2SC4213 Cob - Vcb Ron - ib 50 30 f= 1MHz lE = 0 Ta = 25°C ... | OCR Scan |
4 pages, |
transistor 4213 toshiba 4213 SC4213 2SC4213 2SC4213 abstract |
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| Abstract: 2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit: mm · High emitter-base voltage: VEBO = 25 V (min) · High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA) · Low on resistance: RON = 1 (typ.) (IB , 2007-11-01 2SC4213 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , 2007-11-01 2SC4213 3 2007-11-01 2SC4213 4 2007-11-01 2SC4213 RESTRICTIONS ON PRODUCT ... | Original |
5 pages, |
2SC4213 2SC4213 abstract |
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| Abstract: TOSHIBA 2SC4213 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 SC4213 SC4213 FOR MUTING , Rank 1 2001-05-31 TOSHIBA 2SC4213 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL , TOSHIBA 2SC4213 IC - VCE 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) -10 ic - vce (reverse region , 2SC4213 Cob - Vcb Ron - ib 50 30 10 f= 1MHz lE = 0 Ta = 25°C , Ta (°C) 140 4 2001-05-31 TOSHIBA 2SC4213 RESTRICTIONS ON PRODUCT USE _000707E 000707E • TOSHIBA is ... | OCR Scan |
5 pages, |
transistor 4213 SC4213 2SC4213 2SC4213 abstract |
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| Abstract: 2SC4929 2SC3437 2SC3437 2SC1621 2SC1621 2SC3757 2SC3757 2SC3440 2SC3440 2SC 4912 - -a 2SC4443 2SC4443 2SC4213 2SC4175 2SC4175 2SC3938 2SC3938 2SC 4913 a a ... | OCR Scan |
1 pages, |
2SD1633 2SD1828 2SD2113 2SD2354 4924 4916 4907 2SD2161 2SC4453 2SC4470 4902 2SD1407 2SC4289A 2SC3997 2SD2356 2SC4453 abstract |
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| Abstract: 0 il 2SD1981 2SD1981 2SD1930 2SD1930 2SD 1979 fé T 2SC4694 2SC4694 2SC4213 2SC4181 2SC4181 2SD 1 980 ». - -A 2SC4338 2SC4338 ... | OCR Scan |
1 pages, |
2SD1119 2SD1233 2SD1261 2SC3281 2SD1624 2sd1628 2SD1692 2SD1887 2SC3266 2SD1963 2SC3225 2SD879 2SC2873 2sc3677 2SD1483 2SD879 abstract |
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| Abstract: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4213 Features High emitter-base voltage: VEBO = 25 V (min). High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA). Low on resistance: RON = 1Ù (typ.) (IB = 5 mA). High DC current gain: hFE = 200 1200. Small package. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base ... | Original |
1 pages, |
2SC4213 smd marking AA 2SC4213 abstract |
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| Abstract: 10 0.01 1 0.05 0. 005 2SC4213 ms SW/Mut 50 20 0. 3j 0.1 0.1 50 200 1200 2 0. 004 0.1 0.03 0. 003 , 2SC4213 500 3 0.001 NF max 4.5dB f=800MHz (2-3J1B) BEBC.F-AGC 2SC4214 2SC4214 260 6 0.001 0.55* NF max ... | OCR Scan |
2 pages, |
2SA1619A 2SA1623 2SC4201 2SC4204 2sc4205 2sc4206 2SC4207 2SC4208 2SC4208A 2SC4209 2SC4210 2SC4211 2sc4226 2SC4239 2SC4202 2SC4201 abstract |
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| Abstract: - 185 - M € Type No. » S Manuf. H m SANYO S S TOSHIBA a m NEC B iL HITACHI « ± fl FUJITSU fé T MATSUSHITA H « MITSUBISHI a - M, ROHM 2 SC 4210 as 2SD1935 2SD1935 2SD1328 2SD1328 2SDÌ78ÌK 2SC 4211 = n 2SC4116 2SC4116 2SC4181 2SC4181 2SD1918A 2SD1918A 2SC4155 2SC4155 2SC2412K 2SC2412K 2 SC 4212 fé T 2SC2621 2SC2621 2SC3425 2SC3425 2SC2688 2SC2688 2SC 4213 / ÏÏ. 2 2SD1820 2SD1820 2SC 4214 S 2SC4085 2SC4085 2SC4415 2SC4415 2SC2847 2SC2847 2SC 4215 ^ X S 2SC4400 2SC4400 2SC4178 2SC4178 2SC4259 2SC4259 2SC3931 2SC3931 2SC4099 2SC4099 2SC 4216 " Z HN32Ì0 UN4216 UN4216 2SC 4217 y = 2SC2688 2SC2688 2SC2258 2SC2258 2SC 4218 y H & ... | OCR Scan |
1 pages, |
2SC3077 2SC2688 2SC2621 2SC2412K 2SC4099 2SC4116 2SC4155 2SD1935 2SD1918A 2SD1820 2SD1328 2SC4212 2SC4181 25C2335 2SC3170 2SD1935 abstract |
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| * Library of Japanese Bipolar Transistor Models * Copyright Cadence Design Systems, Inc. 2002 All Rights Reserved. * * * $Revision: 1.9 $ * $Author: HIRASUNA $ * $Date: 11 May 2000 13:26:32 $ * * - * The parameters in this model library were derived from the data sheets for * each part. Each part was characterized using the Parts option. * - www.datasheetarchive.com/files/spicemodels/misc/jbipolar.lib |
Spice Models | 22/09/2001 | 165.84 Kb | LIB | jbipolar.lib |
| * Library of Japanese Bipolar Transistor Models * Copyright OrCAD, Inc. 1998 All Rights Reserved. * $Revision: 1.8 $ * $Author: rperez $ * $Date: 17 Nov 1998 10:47:02 $ * * - * The parameters in this model library were derived from the data sheets for * each part. Each part was characterized using the Parts option. * - *$ .m www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/mixed part list/spice-models-collection/jbipolar.lib |
Spice Models | 29/07/2012 | 165.82 Kb | LIB | jbipolar.lib |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2SC4213 | N/A | Silicon NPN | |
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| 2SC4213 | N/A | Low Power, General Purpose | |
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| 2SC4213A | Toshiba | Si NPN Lo-Pwr BJT | |
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| 2SC4213B | Toshiba | Si NPN Lo-Pwr BJT | |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| BC848BWT1G Buy | 2SC4213B Buy | Toshiba | Close |
| Toshiba Part | Industry Part | Manufacturer | Description | Category |
| 2SC4213 Buy | 30C01M Buy | Sanyo Semiconductor | Transistor for Low-Frequency Small-Signal Amplification - USM - SOT-323 | Transistors |
| Part | Similar Part | Notes |