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Part Manufacturer Description Last Check Distributor Ordering
2SC4213-A(TE85L) Toshiba - 2,418 from $0.22 (Sep 2016) Quest Components Buy
2SC4213-A(TE85L,F) Toshiba Trans GP BJT NPN 20V 0.3A 3-Pin USM T/R 2,500 from $1.57 (Sep 2016) Chip1Stop Buy
2SC4213-B(TE85L) Toshiba - 3,912 from $0.2275 (Sep 2016) Quest Components Buy
2SC4213-B(TE85L,F) Toshiba Trans GP BJT NPN 20V 0.3A 3-Pin USM T/R - Tape and Reel (Alt: 2SC4213-B(TE85L,F)) 9,000 from €0.0763 (Sep 2016) Avnet Buy
2SC4213BTE85LF Toshiba TRANS NPN 20V 0.3A USM 6,000 from $0.0512 (Sep 2016) Digi-Key Buy
2SC4213BTE85LF Toshiba Bipolar Transistors - BJT NPN 0.3A IC 20V Gen Purp Trans 2,783 from $0.06 (Sep 2016) Mouser Electronics Buy

2SC4213 Datasheet

Part Manufacturer Description PDF Type Ordering
2SC4213 N/A Transistor Shortform Datasheet & Cross References
ri

1 pages,
72.99 Kb

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2SC4213 N/A Japanese Transistor Cross References (2S)
ri

1 pages,
34.9 Kb

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2SC4213 N/A The Transistor Manual (Japanese) 1993
ri

2 pages,
103.51 Kb

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2SC4213 N/A Transistor Substitution Data Book 1993
ri

1 pages,
35.89 Kb

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2SC4213 Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
ri

5 pages,
204.53 Kb

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2SC4213 Toshiba NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHIG APPLICATIONS)
ri

4 pages,
176.52 Kb

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2SC4213 Toshiba NPN Transistor
ri

5 pages,
204.54 Kb

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2SC4213A Toshiba Silicon NPN Epitaxial Type Transistor
ri

5 pages,
204.52 Kb

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2SC4213B Toshiba Silicon NPN Epitaxial Type Transistor
ri

5 pages,
204.53 Kb

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2SC4213-A Toshiba 2SC4213 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal
ri

5 pages,
270.24 Kb

Original Buy
datasheet frame

2SC4213

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit: mm · High emitter-base voltage: VEBO = 25 V (min) · High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA) · Low on resistance: RON = 1 (typ.) (IB , 2007-11-01 2SC4213 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , 2007-11-01 2SC4213 3 2007-11-01 2SC4213 4 2007-11-01 2SC4213 RESTRICTIONS ON PRODUCT ... Toshiba
Original
datasheet

5 pages,
270.26 Kb

2SC4213 TEXT
datasheet frame
Abstract: 2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit: mm • High emitter-base voltage: VEBO = 25 V (min) • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON = 1 â , Start of commercial production 1987-05 1 2014-03-01 2SC4213 Electrical Characteristics (Ta , 2 2014-03-01 2SC4213 3 2014-03-01 2SC4213 4 2014-03-01 2SC4213 RESTRICTIONS ... Toshiba
Original
datasheet

5 pages,
270.84 Kb

2SC4213 TEXT
datasheet frame
Abstract: TOSHIBA 2SC4213 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 SC4213 SC4213 FOR , : 0.006g MARKING AA Type Name hjpg Rank 1 2001-05-31 TOSHIBA 2SC4213 ELECTRICAL CHARACTERISTICS (Ta , 2SC4213 IC - VCE 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) -10 ic - vce (reverse region) COMMON , 2SC4213 Cob - Vcb Ron - ib 50 30 10 f= 1MHz lE = 0 Ta = 25 , Ta (°C) 140 4 2001-05-31 TOSHIBA 2SC4213 RESTRICTIONS ON PRODUCT USE _000707E 000707E • TOSHIBA is ... OCR Scan
datasheet

5 pages,
204.52 Kb

transistor 4213 SC4213 2SC4213 TEXT
datasheet frame
Abstract: 2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications · Unit: mm High emitter-base voltage: VEBO = 25 V (min) · High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA) · Low on resistance: RON = 1 (typ.) (IB , 2SC4213 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ , : 350~1200 2 2003-03-27 2SC4213 3 2003-03-27 2SC4213 4 2003-03-27 2SC4213 ... Toshiba
Original
datasheet

5 pages,
155.67 Kb

2SC4213 TEXT
datasheet frame
Abstract: 2SC4213 NPN (PCT) 2SC4213 : mm · : VEBO = 25 V () · Reverse hFE , () (//) (/) () () 1 2007-11-01 2SC4213 (Ta = 25 , 2007-11-01 2SC4213 IC ­ VCE () 50 Ta = 25°C (mA) 120 30 100 80 -8 IC , 2SC4213 Cob ­ VCB RON ­ IB 50 f = 1 MHz 1 k 30 Ta = 25°C 10 k () IE = 0 10 , Ta 140 (°C) 4 2007-11-01 2SC4213 · · · · ... Original
datasheet

5 pages,
220.02 Kb

2SC4213 TEXT
datasheet frame
Abstract: TOSHIBA 2SC4213 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 SC4213 SC4213 FOR MUTING AND SWITCHING APPLICATIONS High Emitter-Base Voltage : VebO = 25V (Min.) High Reverse hjrg Low , 2SC4213 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , 1998-12-17 2/4 TOSHIBA 2SC4213 IC - VCE 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) -10 IC - VCE , 2SC4213 Cob - Vcb Ron - ib 50 30 f= 1MHz lE = 0 Ta = 25 ... OCR Scan
datasheet

5 pages,
176.51 Kb

transistor 4213 toshiba 4213 2SC4213 SC4213 TEXT
datasheet frame
Abstract: 2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit: mm · High emitter-base voltage: VEBO = 25 V (min) · High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA) · Low on resistance: RON = 1 (typ.) (IB , 2SC4213 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ , 2SC4213 3 2007-11-01 2SC4213 4 2007-11-01 2SC4213 RESTRICTIONS ON PRODUCT USE ... Toshiba
Original
datasheet

5 pages,
502.64 Kb

2SC4213 TEXT
datasheet frame
Abstract: Reliability Tests Report Product Name: 2SC4213 Package Name: USM 1. Thermal tests Test Item Heat resistance (Reflow) Heat resistance (Flow) Heat resistance (Iron) Temperature cycling , Failure Rate Product Name Estimated failure rate 2SC4213 0.20 Fit or less Above estimated , Rights Reserved. Heat-resistant Mounting Conditions Product Name: Package Name: 2SC4213 , ) Product Name : 2SC4213 Package Name : USM Always store the Product under moisture sensitivity level ... Toshiba
Original
datasheet

5 pages,
159.32 Kb

2SC4213 TEXT
datasheet frame
Abstract: 2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit: mm • High emitter-base voltage: VEBO = 25 V (min) • High , 2007-11-01 2SC4213 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , : hFE classification A: 200~700, B: 350~1200 2 2007-11-01 2SC4213 3 2007-11-01 2SC4213 4 2007-11-01 2SC4213 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its ... Toshiba
Original
datasheet

5 pages,
271.44 Kb

2SC4213 TEXT
datasheet frame
Abstract: 2SC4213 FOR MUTI NG AND SWITCHING APPLICATIONS. · High Emitter-Base Voltage: SILICON NPN EPITAXIAL TYPE Unit in m m VEgo= 25V(Min.) 1.2 5 ±0.1 2.1 ± 0.1 · H i g h Reverse hpg : Reve r s e h p E =150(Xyp. ) (Vc]?=-2V, Ic=-2mA) · Low on Resistance: R q n = 1^ (Typ.) (I{j=5mA) h p E=200 1200 · High DC Current Gain: · Small Package MA XI M U M RA TI N G S 0 2 RATING 50 20 25 300 , Ic (m A ) co CD 2SC4213 COLLECTOR POWER D IS S IP A T IO N P C (mW) 2501 COLLECTOR ... OCR Scan
datasheet

3 pages,
80.42 Kb

2SC4213 TEXT
datasheet frame
Abstract: 2SC4213 TO SH IB A 2SC4213 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) U nit in mm FOR MUTING AND SWITCHING APPLICATIONS • • • • • 2.1 ± 0.1 1 .2 5 Í 0.1 High Emitter-Base Voltage : V e b q = 25V (Min.) High Reverse hpg : Reverse hpj,; = , notice. 1998 12-17 1/4 - 2SC4213 TO SH IB A ELECTRICAL CHARACTERISTICS (Ta = 25 , 1 a N COLLECTOR-EMITTER ON RESISTANCE Ro n (H) - 1998 12-17 2SC4213 4/4 ... OCR Scan
datasheet

4 pages,
72.14 Kb

2SC4213 TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
No abstract text available
/download/82880807-946875ZC/surface2.xls
Toshiba 17/10/1996 15 Kb XLS surface2.xls
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NEDIS 01/03/2001 2236.65 Kb ZIP price-06.zip
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NEDIS 22/02/2001 1894.94 Kb ZIP price-04.zip
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NEDIS 27/02/2001 1644.67 Kb ZIP price-15.zip
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NEDIS 23/02/2001 1988.13 Kb ZIP price-14.zip
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NEDIS 23/02/2001 1917.46 Kb ZIP price-12.zip

Shortform Datasheet Search

Part Manufacturer Description Shortform Datasheet Ordering
2SC4213 N/A Silicon NPN

Shortform Datasheet

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2SC4213 N/A Low Power, General Purpose

Shortform Datasheet

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2SC4213A Toshiba Si NPN Lo-Pwr BJT

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2SC4213B Toshiba Si NPN Lo-Pwr BJT

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On Semiconductor Cross Reference Results

On Semiconductor Part Industry Part Manufacturer Type
BC848BWT1G Buy 2SC4213B Buy Toshiba Close

Toshiba Cross Reference Results

Toshiba Part Industry Part Manufacturer Description Category
2SC4213 Buy 30C01M Buy Sanyo Semiconductor Transistor for Low-Frequency Small-Signal Amplification - USM - SOT-323 Transistors

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