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2SC4213 Datasheet

Part Manufacturer Description PDF Type Ordering
2SC4213 N/A Transistor Shortform Datasheet & Cross References
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1 pages,
72.99 Kb

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2SC4213 N/A Japanese Transistor Cross References (2S)
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1 pages,
34.9 Kb

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2SC4213 N/A The Transistor Manual (Japanese) 1993
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2 pages,
103.51 Kb

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2SC4213 N/A Transistor Substitution Data Book 1993
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1 pages,
35.89 Kb

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2SC4213 Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
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5 pages,
204.53 Kb

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2SC4213 Toshiba NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHIG APPLICATIONS)
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4 pages,
176.52 Kb

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2SC4213 Toshiba NPN Transistor
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5 pages,
204.54 Kb

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2SC4213A Toshiba Silicon NPN Epitaxial Type Transistor
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5 pages,
204.52 Kb

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2SC4213B Toshiba Silicon NPN Epitaxial Type Transistor
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5 pages,
204.53 Kb

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2SC4213-A Toshiba 2SC4213 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal
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5 pages,
270.24 Kb

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2SC4213

Catalog Datasheet Results Type PDF Document Tags
Abstract: 2SC4213 NPN (PCT) 2SC4213 : mm · : VEBO = 25 V () · Reverse hFE , () (//) (/) () () 1 2007-11-01 2SC4213 (Ta = 25°C , 2007-11-01 2SC4213 IC ­ VCE () 50 Ta = 25°C (mA) 120 30 100 80 -8 IC , ) 300 0.3 1 3 3 10 IC 30 100 (mA) 2007-11-01 2SC4213 Cob ­ VCB , 2007-11-01 2SC4213 · · · · "" · · · ... Original
datasheet

5 pages,
220.02 Kb

2SC4213 2SC4213 abstract
datasheet frame
Abstract: 2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit: mm · High emitter-base voltage: VEBO = 25 V (min) · High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA) · Low on resistance: RON = 1 (typ.) (IB , 2SC4213 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min , 2SC4213 3 2007-11-01 2SC4213 4 2007-11-01 2SC4213 RESTRICTIONS ON PRODUCT USE ... Original
datasheet

5 pages,
502.64 Kb

2SC4213 2SC4213 abstract
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Abstract: 2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications · Unit: mm High emitter-base voltage: VEBO = 25 V (min) · High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA) · Low on resistance: RON = 1 (typ.) (IB , 2SC4213 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min , : 350~1200 2 2003-03-27 2SC4213 3 2003-03-27 2SC4213 4 2003-03-27 2SC4213 ... Original
datasheet

5 pages,
155.67 Kb

2SC4213 2SC4213 abstract
datasheet frame
Abstract: TOSHIBA 2SC4213 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 SC4213 SC4213 FOR MUTING AND SWITCHING APPLICATIONS High Emitter-Base Voltage : VebO = 25V (Min.) High Reverse hjrg Low On , contained herein is subject to change without notice. 1998-12-17 1/4 TOSHIBA 2SC4213 ELECTRICAL , Classification A : 200-700, B : 350-1200 1998-12-17 2/4 TOSHIBA 2SC4213 IC - VCE 0 2 4 6 8 10 , 2SC4213 Cob - Vcb Ron - ib 50 30 f= 1MHz lE = 0 Ta = 25°C ... OCR Scan
datasheet

5 pages,
176.51 Kb

transistor 4213 toshiba 4213 2SC4213 SC4213 2SC4213 abstract
datasheet frame
Abstract: 2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit: mm · High emitter-base voltage: VEBO = 25 V (min) · High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA) · Low on resistance: RON = 1 (typ.) (IB , 2007-11-01 2SC4213 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , 2007-11-01 2SC4213 3 2007-11-01 2SC4213 4 2007-11-01 2SC4213 RESTRICTIONS ON PRODUCT ... Original
datasheet

5 pages,
270.26 Kb

2SC4213 2SC4213 abstract
datasheet frame
Abstract: TOSHIBA 2SC4213 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 SC4213 SC4213 FOR MUTING , Rank 1 2001-05-31 TOSHIBA 2SC4213 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL , TOSHIBA 2SC4213 IC - VCE 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) -10 ic - vce (reverse region , 2SC4213 Cob - Vcb Ron - ib 50 30 10 f= 1MHz lE = 0 Ta = 25°C , Ta (°C) 140 4 2001-05-31 TOSHIBA 2SC4213 RESTRICTIONS ON PRODUCT USE _000707E 000707E • TOSHIBA is ... OCR Scan
datasheet

5 pages,
204.52 Kb

transistor 4213 SC4213 2SC4213 2SC4213 abstract
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Abstract: 2SC4213 FOR MUTI NG AND SWITCHING APPLICATIONS. · High Emitter-Base Voltage: SILICON NPN EPITAXIAL TYPE Unit in m m VEgo= 25V(Min.) 1.2 5 ±0.1 2.1 ± 0.1 · H i g h Reverse hpg : Reve r s e h p E =150(Xyp. ) (Vc]?=-2V, Ic=-2mA) · Low on Resistance: R q n = 1^ (Typ.) (I{j=5mA) h p E=200 1200 · High DC Current Gain: · Small Package MA XI M U M RA TI N G S 0 2 RATING 50 20 25 , Ic (m A ) co CD 2SC4213 COLLECTOR POWER D IS S IP A T IO N P C (mW) 2501 COLLECTOR ... OCR Scan
datasheet

3 pages,
80.42 Kb

2SC4213 2SC4213 abstract
datasheet frame
Abstract: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4213 Features High emitter-base voltage: VEBO = 25 V (min). High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA). Low on resistance: RON = 1Ù (typ.) (IB = 5 mA). High DC current gain: hFE = 200 1200. Small package. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base ... Original
datasheet

1 pages,
47.75 Kb

2SC4213 smd marking AA 2SC4213 abstract
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Abstract: 0 il 2SD1981 2SD1981 2SD1930 2SD1930 2SD 1979 fé T 2SC4694 2SC4694 2SC4213 2SC4181 2SC4181 2SD 1 980 ». - -A 2SC4338 2SC4338 ... OCR Scan
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1 pages,
34.49 Kb

2sc3677 2SD1233 2sd1628 2SD1887 2SD966 2SC2873 2SC3266 2SC4339 2SD879 2SD1963 2SD1692 2SD1624 2SD1261 2SD1119 2sd1944 datasheet abstract
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Abstract: 2SC3437 2SC3437 2SC1621 2SC1621 2SC3757 2SC3757 2SC3440 2SC3440 2SC 4912 - -a 2SC4443 2SC4443 2SC4213 2SC4175 2SC4175 2SC3938 2SC3938 2SC 4913 a a ... OCR Scan
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1 pages,
44.03 Kb

2SD1828 2SD2113 4924 2SD2354 4916 4907 2SD2330 2SC4453 2SC4470 2SC4911K 2SD2161 4902 2SD2356 2SC4289A 2SC3997 datasheet abstract
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Abstract: 2SK879 2SK879 2SK880 2SK880 2SC4213 2SC4666 2SC4666 2SC4667 2SC4667 - Application Structure '- - Single Type N-ch 2SK170 2SK170 ... OCR Scan
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1 pages,
42.62 Kb

3SK195 2SK192A 2sj74 2sc2458 2SC1815 2SA1015 2SA1049 SC-43 2SC1923 2SC2668 SC-59 2SC2714 SC-70 2SC4215 2SC4915 SC-61 SC-43 abstract
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Datasheet Content (non pdf)

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Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
No abstract text available
www.datasheetarchive.com/download/57568258-197606ZD/driv_ext-v2.xls
Toshiba 25/10/1996 12.5 Kb XLS driv_ext-v2.xls

Shortform Datasheet Search Results

Part Manufacturer Description Shortform Datasheet Ordering
2SC4213 N/A Silicon NPN

Shortform Datasheet

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2SC4213 N/A Low Power, General Purpose

Shortform Datasheet

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2SC4213A Toshiba Si NPN Lo-Pwr BJT

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2SC4213B Toshiba Si NPN Lo-Pwr BJT

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On Semiconductor Cross Reference Results

On Semiconductor Part Industry Part Manufacturer Type
BC848BWT1G Buy 2SC4213B Buy Toshiba Close

Toshiba Cross Reference Results

Toshiba Part Industry Part Manufacturer Description Category
2SC4213 Buy 30C01M Buy Sanyo Semiconductor Transistor for Low-Frequency Small-Signal Amplification - USM - SOT-323 Transistors

Misc. Cross Reference Results

Part Similar Part Notes
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2SC4213 Buy 2SD1979S/T Buy