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2SC3182 Datasheet

Part Manufacturer Description PDF Type
2SC3182 Micro Commercial Components NPN Silicon Power Transistor Original
2SC3182 N/A Japanese Transistor Cross References (2S) Scan
2SC3182 N/A Transistor Substitution Data Book 1993 Scan
2SC3182 N/A Scan
2SC3182 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SC3182 Toshiba Power Amplifier Applications Scan
2SC3182N N/A Transistor Shortform Datasheet & Cross References Scan
2SC3182N N/A Catalog Scans - Shortform Datasheet Scan
2SC3182N N/A Catalog Scans - Shortform Datasheet Scan
2SC3182N N/A Catalog Scans - Shortform Datasheet Scan
2SC3182N N/A The Transistor Manual (Japanese) 1993 Scan
2SC3182N-O N/A Transistor Shortform Datasheet & Cross References Scan
2SC3182N-R N/A Transistor Shortform Datasheet & Cross References Scan

2SC3182

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SavantIC Semiconductor Product Specification 2SC3182 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SA1265 APPLICATIONS ·Power amplifier applications , Product Specification 2SC3182 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless , dimensions(unindicated tolerance:±0.10 mm) 3 2SC3182 SavantIC Semiconductor Product Specification 2SC3182 Silicon NPN Power Transistors 4 - -
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Abstract: TOSHIBA {DISCRETE/OPTO! ~5ti DE I^DTTSSO DQQ7tiSD S 9097250 TOSHIBA , 2SC3182 _ le - VcE 10 12 COLLECTOR-EMITTER VOLTAOE VCE V ) hFE â'" IC 1000 Û03 ai. CL3 1 3 -
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A45A 251C 2-16B1A
Abstract: JMnic Product Specification 2SA1265N Silicon PNP Power Transistors DESCRIPTION With TO-3P(I) package Complement to type 2SC3182 2SA1265 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-3P(I) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -140 V JMnic
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Abstract: 2SC3182 2SD 2054 B iL 2SD1622 2SC2873 2SD1615 2SD874A 2SC3444 2SD1898 2SD 2055 â¡ â'"A 2SC3255 -
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2SD1481 2SD2027 2SD880 2SD1567 2SD1248 2SD1634 2SD1555 nec 2035 2035 HITACHI 2055 2SC3346 2SD1394 2SD1217
Abstract: TOSHIBA {DISC RE TE /O PT O} Sb DE | l G T 7 5 S D ü007t,SD 9097250 TOSHIBA /3 SILICON NPN TRIPLE DIFFUSED TYPE_ 2SC3182 Unit in mm J.& 9 M A X - POWER AM PLIFIER APPLICATIONS. FEATURES: . Complementary to 2SA1265 . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage n 2.0XÛ3 / K -e- a L0-a25 +a3o 5 .4 5 ± 0 ,2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base -
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Abstract: OU Si SILICON PNP TRIPLE DIFFUSED TYPE 2SA1265 POWER AMPLIFIER APPLICATIONS. FEATURES: . Complementary to 2SC3182 . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage vCBO -140 V Collector-Emitter Voltage VcEO -140 V Emitter-Base Voltage vebo -5 V Collector Current ic -10 A Base Current IB -1 A Collector Power Dissipation (Tc=25°C) PC 100 W Junction Temperature Ti 150 °C Storage -
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FL11T
Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1265 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -2.0V(Min) @IC= -7A ·Good Linearity of hFE ·Complement to Type 2SC3182 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage applications .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL scs .i PARAMETER ww w VALUE UNIT -140 V -140 V VCBO INCHANGE Semiconductor
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2sa1265 datasheet 2sa1265_
Abstract: Inchange Semiconductor Product Specification 2SA1265N Silicon PNP Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC3182 ·2SA1265 with short pin APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-3P(I) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -
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Abstract: SILICON NPN TRIPLE DIFFUSED TYPE 2SC3182 POWER AMPLIFIER APPLICATIONS. FEATURES: . Complementary to 2SA1265 . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage MAXIMUM RATINGS (Ta=25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 140 V Collector-Emitter Voltage VcEO 140 V Emitter-Base Voltage VEBO 5 V Collector Current ic 10 A Base Current IB 1 A Collector Power Dissipation (Tc=25°C) PC 100 W Junction Temperature Tj 150 °c Storage Temperature Range -
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70w amplifier Complementary Audio Power Amplifier L0025
Abstract: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2SA1265 Features · · · PNP Silicon Power Transistors With TO-3P(I) package Power switching applications Complementary to 2SC3182 Maximum Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 140 140 10 1.5 100 -55 to +150 -55 to Micro Commercial Components
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Abstract: TOSHIBA {DISCRETE/OPTO} 90 972 50 TOSHIB A (D ISCRETE/OPTO) 5b ß F | SOTTESO 0DD720Ì 56C 07289 o r~j3~ SILICON PNP TRIPLE DIFFUSED TYPE_ 2SA1265 Unit in mm 15.9 MAX. 0O.2±O.2 POWER AMPLIFIER APPLICATIONS. FEATURES: . Complementary to 2SC3182 . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power -
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Abstract: SavantIC Semiconductor Product Specification 2SA1265N Silicon PNP Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC3182 ·2SA1265 with short pin APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-3P(I) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -
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Abstract: , One. J.£.ii.E.u ^£.mi20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1265 Silicon PNP Power Transistor DESCRIPTION â'¢ Low Collector Saturation Voltage: VCE(sat)= -2.0V(Min) @lc= -7A â'¢ Good Linearity of hFE â'¢ Complement to Type 2SC3182 PIN 1.BASE 2. COLLECTOR 3. EMITTER TG-2.PI package APPLICATIONS â'¢ Power amplifier applications â'¢ Recommend for 70W high fidelity audio frequency amplifier output New Jersey Semiconductor
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Abstract: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2SC3182 Features · · · With TO-3P(I) package Complementary to 2S A1265 Recommended for 70W high fidelity audio frequency amplifier output stage NPN Silicon Power Transistors Maximum Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Micro Commercial Components
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sa1265
Abstract: 2SD1110 2SD2064 2SD 1334 fé T 2SD1046 2SC3181 2SC2987 2SD2065 2SD 1335 fé T 2SD1047 2SC3182 -
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2SD1196 2SD1357 2SD2025 2SD970 2SD1190 2SD1354 2SC2987A 2sD1413 1329K 2SD970CK
Abstract: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA CDISCRETE/OPTO) SILICON PNP TRIPLE DIFFUSED TYPE "sb dFI^O^VSSO â¡007S0iÌ S 56C 07 289 0 $ y 2SA1265 POWER AMPLIFIER APPLICATIONS. FEATURES: . Complementary to 2SC3182 . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage Unit in mm MAXIMUM RATINGS (Ta=25°C) 15.9 MAX. 0a.2±a2 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage VCEO -140 V Emitter-Base Voltage vebo -5 V Collector Current -
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007S0 0D07E
Abstract: â'" - - 2SC3182 2SA1265 140 100 5 5 -16 0 5 1 2 7 0.7 30 5 -
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2SD176 2SB686 2SC3180 2SA1093 2SD718 2SB688
Abstract: AOK AOK Semiconductor Silicon PNP P o w er Transistors Product Specification 2SA1265N D E S C R IP T IO N · W ith T O -3 P (l) p ackag e · C om plem ent to type 2SC3182 · 2SA1265 with short pin A P P L IC A T IO N S · P ow er am plifier applications PINNING PIN 1 o 3 DESCRIPTION Emitter Collector:conr>ected to mounting base Base A b s o lu te m a x im u m rating s(T a=25*C ) SYM BO L PARAMETER Collector-base voltage Collector-em itter voltage Emitter-base voltage C ollector -
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Abstract: 2SA1146 i 2SC3182 ! 2SA1265 _j. _ ., n co 00 m Kl a 8 O o o o o o o o o o -
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2SA1263 2SC2563 2SA1264 2SC2706 2SD1090 TSB140 TDT75SD 2SC3657
Abstract: TIP33E 2SD745 2SDl148 2SD1148N 2SC3182 IDC2706 SML7736 SML7746 SML7766 SML7Al1 SML7A05 SML85305 SML85310 Short Form Catalog
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BD141 40G120 BU124 2N5634 BDX22 2N3442 2SC410 SML85605
Abstract: OU Si SILICON PNP TRIPLE DIFFUSED TYPE 2SA1265 POWER AMPLIFIER APPLICATIONS. FEATURES: . Complementary to 2SC3182 . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage vCBO -140 V Collector-Emitter Voltage VcEO -140 V Emitter-Base Voltage vebo -5 V Collector Current ic -10 A Base Current IB -1 A Collector Power Dissipation (Tc=25°C) PC 100 W Junction Temperature Ti 150 °C Storage -
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2SC2792 2SC3322 2SC3151 2SC2790 2SC3152 2SC3344 SC3150 c2979 3171 s 2sc3153 2SC2347 2sc3180n 2SC3148 2SC2979 2SC4359 2SC3981
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