NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SC2983 | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
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| 2SC2983 | N/A | Transistor Substitution Data Book 1993 |
1 pages, |
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| 2SC2983 | N/A | The Transistor Manual (Japanese) 1993 |
2 pages, |
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| 2SC2983 | Toshiba | SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR |
3 pages, |
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| 2SC2983 | Toshiba | NPN Transistor |
4 pages, |
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| 2SC2983 | Toshiba | Silicon NPN transistor for power amplifier and driver stage amplifier applications |
3 pages, |
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| 2SC2983 | Toshiba | Silicon NPN Transistor |
4 pages, |
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| 2SC2983 | Various Russian Datasheets | Transistor |
8 pages, |
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| 2SC2983 | N/A | Cross Reference Datasheet |
1 pages, |
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| 2SC2983 | N/A | Transistor Shortform Datasheet & Cross References |
1 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SD1090 (K) 2SD 1072 m±w» 2SD1113 2SD1113 (K)- 2SD 1073 «±s« 2SD1115 2SD1115ÍK) 2SD 1074 a ± 2SC2983 2SD1033 2SD1033 2SD212L/S 2SD212L/S 2SD1733 2SD1733 2SD 1075 a i 2SC2983 2SD1033 2SD1033 2SD2121L/S 2SD2121L/S 2S0 1076 a i 2SC3073 2SC3073 2SD992 2SD992 , ocni7 7 2SD 1080 a íl 2SC2983 2SD1033 2SD1033 2SD1250 2SD1250 2S0 1080 L/S a íl 2SD2122L/S 2SD2122L/S 2SD 1081 a íl 2SC2983 2SD1033 2SD1033 2SD1250A 2SD1250A 2SD 1081L/S 1081L/S a sz 2SD2123L/S 2SD2123L/S 2SD 1082 a íl 2SC2983 ... | OCR Scan |
1 pages, |
2sc2562 2SD1051 2SD1134 2SD1137 2SD1246 2SD1580 2SD1706 2SD961 2SD812 2SD743 2SD613 2SD525 2SD1238 2sd1245 2SD987 2SD1246 abstract |
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| Abstract: 2SC2983 NPN (PCT) 2SC2983 : mm · : fT = 100 MHz () · 2SA1225 2SA1225 (Ta = 25°C) · VCBO 160 V · VCEO 160 , 2SC2983 (Ta = 25°C) ICBO VCB , (: : ) 2 2006-11-07 2SC2983 IC VCE hFE IC 500 IC Tc = 25°C 8 (A) 1.0 , 160 (°C) VCEO max 3 10 30 · 3 100 300 VCE (V) 2006-11-07 2SC2983 ... | Original |
4 pages, |
2SC2983 2SA1225 C2983 2SC2983 abstract |
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| Abstract: 1872 •_ « 2SD1801 2SD1801 2SC3076 2SC3076 2SD992 2SD992 2SD1775 2SD1775 2SD1758 2SD1758 2SD 1873 . * 2SC4027 2SC4027 2SC2983 2SD1771 2SD1771 2SD 1874 H * 2SC4027 2SC4027 2SC2983 2SD1258 2SD1258 2SD 1875 - -A 2SD1164 2SD1164 2SD1645 2SD1645 2SD 1876 , 2SD1553 2SD1553 ... | OCR Scan |
1 pages, |
2SD2404 d 1867 d 1879 2SC1645S 2SC2532 2SD1383K 2SD1478 2SD1640 2SD1994A 2SD893 2SD892 2SD1930 2SD1886 2SD1698 2SD1697 2SD1886 abstract |
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| Abstract: 2093H 2SD1760 2SD1760 2SD 2122L/S 2122L/S 0 iL 2SC4027 2SC4027 2SC2983 2SD1033 2SD1033 2SD19I8 2SD19I8 2SD 2123L/S 2123L/S 0 iL 2SC4027 2SC4027 2SC2983 2SD ... | OCR Scan |
1 pages, |
m 2120 2109 2SC4547 2sd1033 2SD1273 2SD1275A 2sd1417 2SD1586 2SD1670 2SD1773 2SD1830 2SD1848 2SD1895 2SD1913 2SD1878 2SC4547 abstract |
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| Abstract: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications · High transition frequency: fT = 100 MHz (typ.) · , g (typ.) 1 2006-11-09 2SC2983 Electrical Characteristics (Ta = 25°C) Characteristics , finish. 2 2006-11-09 2SC2983 IC VCE hFE IC 1.2 500 Collector current IC Tc , Collector-emitter voltage 3 100 300 VCE (V) 2006-11-09 2SC2983 RESTRICTIONS ON PRODUCT USE ... | Original |
4 pages, |
2SC2983 2SA1225 C2983 2SC2983 abstract |
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| Abstract: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications · High transition frequency: fT = 100 MHz (typ.) · , Weight: 0.36 g (typ.) 1 2002-07-23 2SC2983 Electrical Characteristics (Ta = 25°C , 2002-07-23 2SC2983 IC VCE hFE IC 1.2 500 IC Collector current hFE Tc = 25°C , (V) 2002-07-23 2SC2983 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA is continually ... | Original |
4 pages, |
2SC2983 2SA1225 C2983 2SC2983 abstract |
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| Abstract: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications · High transition frequency: fT = 100 MHz (typ.) · , Weight: 0.36 g (typ.) 1 2002-07-23 2SC2983 Electrical Characteristics (Ta = 25°C , 2002-07-23 2SC2983 IC VCE hFE IC 1.2 500 IC Collector current hFE Tc = 25°C , 300 (V) 2002-07-23 2SC2983 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA is ... | Original |
4 pages, |
2SC2983 2SA1225 C2983 2SC2983 abstract |
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| Abstract: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications · High transition frequency: fT = 100 MHz (typ.) · , Weight: 0.36 g (typ.) 1 2005-02-01 2SC2983 Electrical Characteristics (Ta = 25°C , finish. 2 2005-02-01 2SC2983 IC VCE hFE IC 500 1.2 Collector current IC (A , voltage 3 100 VCE 300 (V) 2005-02-01 2SC2983 RESTRICTIONS ON PRODUCT USE ... | Original |
4 pages, |
2SC2983 2SA1225 C2983 2SC2983 abstract |
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| Abstract: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications · High transition frequency: fT = 100 MHz (typ.) · , report and estimated failure rate, etc). 1 2010-02-05 2SC2983 Electrical Characteristics (Ta , hazardous substances in electrical and electronic equipment. 2 2010-02-05 2SC2983 IC VCE , 2SC2983 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates ... | Original |
4 pages, |
2SC2983 2SA1225 C2983 2SC2983 abstract |
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| Abstract: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications · · High transition frequency: fT = 100 MHz (typ. , rate, etc). 1 2010-03-10 2SC2983 Electrical Characteristics (Ta = 25°C) Characteristics , substances in electrical and electronic equipment. 2 2010-03-10 2SC2983 IC VCE 1.2 20 12 500 , ) Collector-emitter voltage VCE (V) 3 2010-03-10 2SC2983 RESTRICTIONS ON PRODUCT USE · Toshiba ... | Original |
4 pages, |
2SC2983 2SC2983 abstract |
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| Abstract: 2SD401A 2SD401A 2SD1562A 2SD1562A 2SD 1 7 70 A ® T 2SD1772A 2SD1772A 2SD 1771 y-y try 2SC2983 2SC2690A 2SC2690A 2SD 1 7 7 ... | OCR Scan |
1 pages, |
2SD1407 2SD1405 2SD1048 2SC2859 2SC1449 25c2655 2SD1653 2SD1654 2SD596 2SD2061 2SD1929 2SD1889 2sd1836 2SD1656 2SD1655 2SD1653 abstract |
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| Abstract: - 150 - m € Type No. tt S Manuf. H -M SANYO S S TOSHIBA B m. NEC 0 iL HITACHI « ± a FUJITSU « T MATSUSHITA z. m MITSUBISHI - - A ROHM 2SC 2926 ^ u-h 2SC3000 2SC3000 2SC1907 2SC1907 2SC1215 2SC1215 2SC 292? 0 ÌL 2SC2621 2SC2621 2SC2923 2SC2923 2SC3272 2SC3272 2SC 2929 2SC3038 2SC3038 2SC2518 2SC2518 2SC3971 2SC3971 2SC4205 2SC4205 2SC 2931 z m 2SC2558-KA 2SC2558-KA 2SC 2932 = s 2SC2559-KA 2SC2559-KA 2SC 2933 ' = s 2SC2850-KA 2SC2850-KA 2SC2993 2SC2993 2SC 2934 r S XL 2SC2621 2SC2621 2SC2688 2SC2688 2SC2611 2SC2611 2SC3063 2SC3063 2SC3272 2SC3272 2SC 2935 0 ÌL 2SC2S21 2SC2S21 2SC2688 2SC2688 2SC3063 2SC3063 2SC3272 2SC3272 2SC 293? o> ... | OCR Scan |
1 pages, |
2SC2518 2SC1907 2SC1870 2SC1215 2SC2923 2SC3272 2SC3000 2SC3038 2sd1033 2SC4205 2SC3971 2sc3277 2SC2926S 2SC2621 2sc3153 2SC3000 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| .001M MJC=499.948M TF=709.507P XTF=499.993M VTF=10.0001 + ITF=15.627M TR=10N) * NPN .MODEL 2SC2983 www.datasheetarchive.com/files/spicemodels/misc/models/japan.lib |
Spice Models | 01/09/2003 | 54.33 Kb | LIB | japan.lib |
| *$ model description: "awb2n1613" *b Device model created by analog_uprev for 2n1613 on Fri Feb 2 18:03:16 IST 2001 .subckt awb2n1613 C B E + params: + IC_VBE=1.10250E-36 10250E-36 10250E-36 10250E-36 + IC_VCE=1.10250E-36 10250E-36 10250E-36 10250E-36 + STATE=1 + TEMP=0 + AREA=1 + STATE_FACTOR=0 + IS=3.567E-14 567E-14 567E-14 567E-14 + BF=9.684E+01 + NF=1.000E+00 + VAF=2.150E+02 + IKF=1.000E+01 + ISE=5.191E-15 191E-15 191E-15 191E-15 + NE=1.160E+00 + BR=1.236E+01 + NR=1.000E+00 + VAR=3.923E+01 + IKR=1.474E-01 474E-01 474E-01 474E-01 + ISC=6.614E-13 614E-13 614E-13 614E-13 + NC=1.256E+00 + RB=0.000E+00 + IRB=9.463E-04 463E-04 463E-04 463E-04 + RE= www.datasheetarchive.com/files/spicemodels/misc/bjn.lib |
Spice Models | 18/06/2008 | 1165.77 Kb | LIB | bjn.lib |
| * Library of Japanese Power Bipolar Transistor Models * Copyright OrCAD, Inc. 1998 All Rights Reserved. * $Revision: 1.8 $ * $Author: rperez $ * $Date: 17 Nov 1998 10:48:24 $ * * - * The parameters in this model library were derived from the data sheets for * each part. Each part was characterized using the Parts option. * - www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/mixed part list/spice-models-collection/jpwrbjt.lib |
Spice Models | 29/07/2012 | 122.49 Kb | LIB | jpwrbjt.lib |
| * Library of Japanese Power Bipolar Transistor Models * Copyright Cadence Design Systems, Inc. 2002 All Rights Reserved. * * * $Revision: 1.9 $ * $Author: HIRASUNA $ * $Date: 11 May 2000 13:26:32 $ * * - * The parameters in this model library were derived from the data sheets for * each part. Each part was characterized using the Model Editor. * - www.datasheetarchive.com/files/spicemodels/misc/jpwrbjt.lib |
Spice Models | 22/09/2001 | 122.52 Kb | LIB | jpwrbjt.lib |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2SC2983 | N/A | Silicon NPN | |
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| 2SC2983 | N/A | AMH | |
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| 2SC2983O | N/A | Si NPN Power HF BJT | |
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| 2SC2983Y | N/A | Si NPN Power HF BJT | |
| KEC Part | Industry Part | Manufacturer | Category | Description |
| KTC2983D Buy | 2SC2983 Buy | Toshiba | BJT | General Purpose Transistor |
| KTC2983L Buy | 2SC2983 Buy | Toshiba | BJT | General Purpose Transistor |
| NTE Electronics Part | Industry Part |
| NTE2528 Buy | 2SC2983 Buy |
| NTE2528 Buy | 2SC2983O Buy |
| NTE2528 Buy | 2SC2983-O Buy |
| NTE2528 Buy | 2SC2983Y Buy |
| NTE2528 Buy | 2SC2983-Y Buy |
| Part | Similar Part | Notes |
| 2SC2983 Buy | 2SC4027 Buy | |
| 2SC2983 Buy | 2SD1033 Buy | |
| 2SC2983 Buy | 2SD1080 Buy | |
| 2SC2983 Buy | 2SD1080..82 Buy | |
| 2SC2983 Buy | 2SD1081 Buy | |
| 2SC2983 Buy | 2SD1082 Buy | |
| 2SC2983 Buy | 2SD1918 Buy | |
| 2SC2983 Buy | 2SD2004 Buy | |
| 2SC2983 Buy | 2SD2365 Buy | |
| 2SC2983 Buy | C4027 Buy |