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2SC2837 Sanken Electric Co Ltd Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P, 3 PIN visit Digikey Buy
2SC2837 DK Sanken Electric Co Ltd TRANS NPN 150V 10A TO-3P visit Digikey Buy

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2SC2837 Datasheet

Part Manufacturer Description PDF Type
2SC2837 Allegro MicroSystems TRANS GP BJT NPN 150V 3TO3P Original
2SC2837 Sanken Electric Power Transistor Selection Guide Original
2SC2837 Mospec POWER TRANSISTORS(10A,150V,100W) Scan
2SC2837 Mospec High Power NPN Silicon Power Transistor Scan
2SC2837 N/A The Transistor Manual (Japanese) 1993 Scan
2SC2837 N/A Transistor Substitution Data Book 1993 Scan
2SC2837 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SC2837 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SC2837 N/A The Japanese Transistor Manual 1981 Scan
2SC2837 N/A Transistor Shortform Datasheet & Cross References Scan
2SC2837 N/A Shortform Transistor PDF Datasheet Scan
2SC2837 N/A Japanese Transistor Cross References (2S) Scan
2SC2837O Allegro MicroSystems TRANS GP BJT NPN 150V 15A 3TO3P Original
2SC2837P Allegro MicroSystems TRANS GP BJT NPN 150V 15A 3TO3P Original
2SC2837Y Allegro MicroSystems TRANS GP BJT NPN 150V 10A 3TO3P Original

2SC2837

Catalog Datasheet MFG & Type PDF Document Tags

2sc2837

Abstract: 2SA1186 2SC2837 LAPT Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1186) sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics External Dimensions MT-100(TO3P) (Ta=25°C) Unit VCB=150V 100max µA V IEBO VEB=5V 100max µA IC=25mA 150min V V , 9.6 4.0 150 1.8 ICBO VCBO 5.0±0.2 2SC2837 Symbol Unit 2.0 Conditions 2SC2837 19.9±0.3 Symbol Application : Audio and General Purpose 3.5 0 Without Heatsink 0
Sanken Electric
Original

2SC2837

Abstract: 2SA1186 2SC2837 Inchange Semiconductor Product Specification 2SC2837 Silicon NPN Power Transistors DESCRIPTION With TO-3PN package Complement to type 2SA1186 APPLICATIONS For audio and general purpose , Product Specification 2SC2837 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise , Inchange Semiconductor Product Specification 2SC2837 Silicon NPN Power Transistors PACKAGE , tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC2837 Silicon NPN Power
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Original
2SA1186 2SC2837

2SC2837

Abstract: 2SA1186 2SC2837 ¿Z&MOSPEC HIGH POWER NPN SILICON POWER TRANSISTORS .designed for use in general-purpose amplifier and switching application. FEATURES: * Recommend for 60 W High Fidelity Audio Frequency Amplifier Output stage * Complementary to 2SA1186 MAXIMUM RATINGS Characteristic Symbol 2SC2837 Unit , \ "o 25 50 75 100 125 150 Tc , TEMPERATURE(»C) NPN 2SC2837 10 AMPERE POWER TRANASISTOR 150 , *f 0.45(typ) us (1) Pulse Test: Pulse Width =300 us,Duty Cycle ^ 2.0% 2SC2837 NPN ACTIVE REGION
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OCR Scan
2sc2837 transistor

2SC2837

Abstract: 2SA1186 2SC2837 SavantIC Semiconductor Product Specification 2SC2837 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1186 APPLICATIONS ·For audio and general purpose , ~150 TC=25 SavantIC Semiconductor Product Specification 2SC2837 Silicon NPN Power , .2 outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC2837 SavantIC Semiconductor Product Specification 2SC2837 Silicon NPN Power Transistors 4 -
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Original
Abstract: SANKEN ELECTRIC CO LT» SSE D â  7 ^ 0 7 41 GODDTHS 04fl H S A K J as-(3 Silicon N PN Epitaxial Planar 2SC2837 * LA PT ☠Complement to type 2 S A 1 1 8 6 Application Example : â'¢ Outline Drawing 2 . MT-100(T03P) Audio and General Purpose Electrical Characteristics (Ta=25â'˜C) C o n d itio n s 2SC2837 ICBO V ob= 1 50 V 100max ^A Ie b o , =25*C) U nit Vceo 2SC2837 150 V ceo 150 V V ebo 5 V U nit a A Sym -
OCR Scan
MT-25CT0220 MT-200 FM100 MT-25 T0220

transistor 2SB618

Abstract: FAX:+86-21-58341568 2SC2707 NPN E-mail: sales@thinkisemi.com ã'' 2SA1186 PNP 2SC2837 , 2SC2705 NPN 2SA1186 PNP 2SC2837 NPN 2SA1220 PNP 2SC2690 NPN 2SA1248 2SC3116
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Original
transistor 2SB618 2SA733 2SC1815 2SA970 2SC2240 2SA988 2SC1841

SA1213

Abstract: 2SC2852 2SC2837 PSW 150 150 10 100 100 150 30 4 3 2 5 0.5 2SC2839 ELì$ HF A 30 20 0. 03 0.15 0.1 10 60 320 , (MT100) BCE 2SC2837 200 6 0.001 1.3 PG typ25dB f=100MHz (SPA) ECB 2SC2839 360 6 0.004 0.8 PC
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OCR Scan
2SC2834 2SC2834A 2SC2840 2SC2841 2SC2845 2SC2847 SA1213 2SC2852 2SC2888 ka bs 89 2SC2887 2sa120

2SA1295 2SC3264

Abstract: 2SA1694 2SC4467 2SA1186/2SC2837 2SA1303/2SC3284 2SA1386/2SC3519 2SA1386A/2SC3519A 2SA1294/2SC3263 2SA1215/2SC2921 2SA1216
Allegro MicroSystems
Original
T03PF 2SA1295 2SC3264 2SA1694 2SC4467 transistor 2sa1494 2sa1492 2sc3856 2SD2493 2SA1725/2SC4511 2SA1726/2SC4512 2SA1693/2SC4466 2SA1907/2SC5099 2SA1908/2SC5100

2SA12

Abstract: 2sa11 high-frequency transistor) Type No 2SA18 6 0 / 2SC4886 2SA11 8 6 / 2SC2837 2SA13 0 3 / 2SC3284 2SA13 8 6
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OCR Scan
2SA17 2SA16 2SA12 2SC3263 2SC3264 2SD2390 C3519A c 3519a 2SC4511 2SC4512 2SC4466 2SA19

2sA1186 transistor

Abstract: transistor p100 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1186 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2837 APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w -150 V -150 V -5 V IC Collector Current-Continuous -10 A IB
INCHANGE Semiconductor
Original
2sA1186 transistor transistor p100 Y130 Y-140 Y140 Y160
Abstract: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1186 Silicon PNP Power Transistor i^ DESCRIPTION â'¢ High Collector-Emitter Breakdown VoltageV(BR)CEO=-150V(Min) â'¢ Good Linearity of hFE 'â'¢i H ?" â'¢ Complement to Type 2SC2837 1 APPLICATIONS TC-3PIN Package Collector-Base Voltage ~c+- ^\ : ' ^ I *â'¢- ABSOLUTE MAXIMUM RATINGS(Ta=25'C) VCBO 3. Emitter Aiur ^ F - - s AT'E New Jersey Semiconductor
Original

2SA1186

Abstract: transistor p100 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1186 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2837 APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC
INCHANGE Semiconductor
Original
transistor p90 transistor pnp VCEO 12V Ic 1A 5060 transistor

2SA1186

Abstract: 2SA1186 2SC2837 SavantIC Semiconductor Product Specification 2SA1186 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·High current capability ·Complement to type 2SC2837 APPLICATIONS ·Audio and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage
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Original

2sa1186

Abstract: 2SC2837 JMnic Product Specification 2SA1186 Silicon PNP Power Transistors DESCRIPTION With TO-3PN package High current capability Complement to type 2SC2837 APPLICATIONS Audio and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V
JMnic
Original

2SC2837

Abstract: cin60 2SC2837 LAPT Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1186) sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics External Dimensions MT-100(TO3P) (Ta=25°C) Unit VCB=150V 100max µA V IEBO VEB=5V 100max µA IC=25mA 150min V V VCEO 150 VEBO 5 V V(BR)CEO IC 10 A hFE VCE=4V, IC=3V 50min V A VCE(sat) IC=5A, IB=0.5A 100(Tc=25°C) W fT VCE=12V, IE=­1A 70typ MHz Tj 150
Sanken Electric
Original
cin60 DSA0016506

sanken power transistor 2SA1216

Abstract: 2SC2922 SANKEN '61 2SC2023 . -62 2SC2837 .63 2SC2921
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OCR Scan
2SC3909 2SC4138 sanken power transistor 2SA1216 2SC2922 SANKEN 2SC3855 SANKEN sanken power transistor 2sa1295 SANKEN 2sc3909 2SC3854 sanken 2SA1215 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386A

2SA1186

Abstract: 2sA1186 transistor ¿là MOS PEC HIGH POWER PNP SIUCON POWER TRANSISTORS .designed for use in general-purpose amplifier and switching application. FEATURES: * Recommend for 60 W High Fiderity Audio Frequency Amplifier Output stage * Complementary to 2SC2837 MAXIMUM RATINGS FIGURE -1 POWER DERATING 100 £ 80 I 1 60 i io i 40 a. tu I 20 25 50 75 100 125 150 Tc , TEMPERATI)RE(°C) Characteristic Symbol 2SA1186 Unit Collector-Emitter Voltage VCEO 150 V Collector-Base Voltage vCBO 150 V Emitter-Base
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OCR Scan

B205A

Abstract: 2SA1186 AOK AOK Semiconductor S ilicon PNP P o w er Transistors Product Specification 2SA1186 DESCRIPTION · W ith TO-3PN package · High current capability · Complement to type 2SC2837 APPLICATIONS · A udio and general purpose applications PINNING PIN 1 o 3 Base Collector:conr>ected to mounting base Emitter DESCRIPTION A b s o lu te m a xim u m ratings(Ta=*C) SYMBOL VcBO VcEO V eèÔ lc Ib Pc PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector
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OCR Scan
B205A

2SA1186

Abstract: 2sa1186 transistor 2SA1186 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837) sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics External Dimensions MT-100(TO3P) (Ta=25°C) 2SA1186 Unit V ICBO VCB=­150V ­100max µA V IEBO VEB=­5V ­100max µA IC=­25mA ­150min V VCBO ­150 VCEO ­150 ­5 V V(BR)CEO IC ­10 A hFE VCE=­4V, IC=­3A IB ­2 A VCE(sat) IC=­5A, IB=­0.5A PC 100(Ta=25°C) W fT Tj 150 °C
Sanken Electric
Original
IE1A transistor 1564

2SA1186

Abstract: DSA0016502 2SA1186 LAPT Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837) sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics External Dimensions MT-100(TO3P) (Ta=25°C) Unit V ICBO VCB=­150V ­100max µA V IEBO VEB=­5V ­100max µA IC=­25mA ­150min V VCBO ­150 VCEO ­150 ­5 V V(BR)CEO IC ­10 A hFE VCE=­4V, IC=­3A IB ­2 A VCE(sat) IC=­5A, IB=­0.5A PC 100(Ta=25°C) W fT Tj 150 °C
Sanken Electric
Original
DSA0016502

2SC2553

Abstract: 2SC3531 FAX:+86-21-58341568 2SC2707 NPN E-mail: sales@thinkisemi.com ã'' 2SA1186 PNP 2SC2837 , 2SC2705 NPN 2SA1186 PNP 2SC2837 NPN 2SA1220 PNP 2SC2690 NPN 2SA1248 2SC3116
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OCR Scan
2SC2829 2SC3277 2SC2553 2SC2914 2SC3531 2SC2999 2SC3536 2SC1845 2sc3040 2SC2828 2SC2830 2SC2831 2SC2139
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