NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SC2712 | Galaxy Semi-Conductor Holdings Limited | Silicon Epitaxial Planar Transistor |
4 pages, |
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| 2SC2712 | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
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| 2SC2712 | N/A | Semiconductor Master Cross Reference Guide |
1 pages, |
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| 2SC2712 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
Scan | |
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| 2SC2712 | N/A | The Japanese Transistor Manual 1981 |
2 pages, |
Scan | |
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| 2SC2712 | N/A | Transistor Substitution Data Book 1993 |
1 pages, |
Scan | |
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| 2SC2712 | N/A | The Transistor Manual (Japanese) 1993 |
2 pages, |
Scan | |
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| 2SC2712 | Toshiba | NPN Transistor |
4 pages, |
Scan | |
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| 2SC2712 | Toshiba | TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLFIER APPLICATIONS) |
3 pages, |
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| 2SC2712 | Toshiba | Transistor Silicon NPN epitaxial Type (PCT Process) |
3 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SC2712 3 1 2 SOT-23 WEITRON http://www.weitron.com.tw 2SC2712 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Unit Max ON CHARACTERISTICS DC Current Gain (IC= 2 mAdc, VCE= 6.0 Vdc) hFE 0.1 0.25 Vdc , ://www.weitron.com.tw 2SC2712 FIG2. FIG1. FIG3. FIG5. WEITRON http//www.weitron.com.tw FIG4. FIG6. 2SC2712 FIG7. FIG9. WEITRON http//www.weitron.com.tw FIG8. 2SC2712 SOT-23 ... | Original |
5 pages, |
Weitron SOT 23 LY MARKING LG j y w sot23 2SC2712 sot-23 Marking LG 2SC2712 abstract |
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| Abstract: 1 1 Product-Rank 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL Range 70~140 120 , 2SC2712 0.15A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURE Low Noise: NF=1dB , individually. Page 1 of 3 2SC2712 Elektronische Bauelemente 0.15A , 60V NPN Epitaxial Planar , specification will not be informed individually. Page 2 of 3 2SC2712 Elektronische Bauelemente 0.15A ... | Original |
3 pages, |
SOT 23 LY 2SC2712-Y 2SC2712-O 2SC2712-GR 2SA1162 2SC2712Y 2SC2712-BL 2SC2712GR 2SC2712 2SC2712 abstract |
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| Abstract: Low noiseNF=1dB (Typ.),10 dB(Max). 2SC2712 Pb Lead-free Complementary to 2SA1162 2SA1162. High , applications. SOT-23 ORDERING INFORMATION Type No. Package Code LO/LY/LG/LL 2SC2712 Marking , BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2712 , Planar Transistor 2SC2712 TYPICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Document , Silicon Epitaxial Planar Transistor 2SC2712 PACKAGE OUTLINE Plastic surface mounted package ... | Original |
4 pages, |
transistor marking LG marking LY sot-23 marking LG sot-23 2SA1162 SOT 23 LY LY SOT23 2SC2712 sot-23 Marking LG 2SA1162 abstract |
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| Abstract: 1 SOT-323 Lead-free: 2SC2712L Halogen-free:2SC2712G ORDERING INFORMATION Normal 2SC2712-x-AE3-R 2SC2712-x-AL3-R Ordering Number Lead Free Plating Halogen Free 2SC2712L-x-AE3-R 2SC2712G-x-AE3-R 2SC2712L-x-AL3-R 2SC2712G-x-AL3-R Package SOT-23 SOT-323 Pin Assignment 1 2 3 E B C E B C Packing Tape Reel Tape Reel MARKING 2SC2712-Y 2SC2712-G 14www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 2SC2712-L 1 of 4 QW-R206-029 QW-R206-029.D 2SC2712 NPN ... | Original |
4 pages, |
2SC2712Y 2SC2712L 2SC2712G 2SC2712-Y 2SC2712-G TRANSISTOR BL 100 2SC2712 2SC2712-G R 2SC2712 abstract |
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| Abstract: :2SC2712G ORDERING INFORMATION Normal 2SC2712-x-AE3-R 2SC2712-x-AL3-R Ordering Number Lead Free Halogen Free 2SC2712L-x-AE3-R 2SC2712G-x-AE3-R 2SC2712L-x-AL3-R 2SC2712G-x-AL3-R Package SOT-23 , 2SC2712-Y LY L: Lead Free G: Halogen Free 2SC2712-G LG www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd L: Lead Free G: Halogen Free 2SC2712-L LL L: Lead Free G , UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN ... | Original |
4 pages, |
sot-323 Marking LG 2SC2712L 2SC2712G 2SC2712-Y 2SC2712-G 2SC2712-G R 2SC2712 2SC2712 abstract |
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| Abstract: 2SC2712 NPN (PCT) 2SC2712 AM : mm · · : IC = 150 mA () · , g () °C JEDEC °C : (//) ( / ) () () 1 2007-11-01 2SC2712 , 2007-11-01 2SC2712 IC VCE hFE IC 240 1000 6.0 5.0 500 Ta = 25°C 3.0 200 , ) 2007-11-01 2SC2712 h IC 2000 h VCE 2000 VCE = 12 V, f = 270 Hz Ta = 25°C 1000 , 0 25 50 75 Ta 100 125 (°C) 4 2007-11-01 2SC2712 · · · ... | Original |
5 pages, |
2SA1162 2SC2712 2SC2712 abstract |
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| Abstract: 2SC2712 NPN (PCT) 2SC2712 AM : mm · · : IC = 150 mA () · , () °C JEDEC °C : (//) ( / ) () () 1 2010-06-01 2SC2712 (Ta = , 2010-06-01 2SC2712 IC VCE hFE IC 240 1000 5.0 Ta = 25°C 160 500 2.0 , ) 2010-06-01 2SC2712 h IC 2000 h VCE 2000 VCE = 12 V, f = 270 Hz Ta = 25°C 1000 , 50 75 Ta 100 125 (°C) 4 2010-06-01 2SC2712 · · · ... | Original |
5 pages, |
2SA1162 2SC2712 2SC2712 abstract |
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| Abstract: 2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712 Audio Frequency General Purpose Amplifier Applications · High voltage and high current: VCEO = 50 V, IC = 150 mA (max , (typ.) Marking 1 2003-03-27 2SC2712 Electrical Characteristics (Ta = 25°C , , GR (G): 200~400, BL (L): 350~700 ) marking symbol 2 2003-03-27 2SC2712 3 2003-03-27 2SC2712 4 2003-03-27 2SC2712 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · ... | Original |
5 pages, |
2SA1162 2SC2712 2SC2712 abstract |
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| Abstract: MCC 2SC2712 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features · NPN Plastic-Encapsulate Transistors Complementary to 2SA1162 2SA1162 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG , www.mccsemi.com Revision: 4 1 of 3 2008/01/01 MCC 2SC2712 www.mccsemi.com Revision: 4 2 of 3 ... | Original |
3 pages, |
2SC2712Y 2SC2712 2SC2712GR datasheet abstract |
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| Abstract: 2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712 Audio Frequency General Purpose Amplifier Applications · High voltage and high current: VCEO = 50 V, IC = 150 mA (max , (typ.) Marking 1 2003-03-27 2SC2712 Electrical Characteristics (Ta = 25°C , ): 120~240, GR (G): 200~400, BL (L): 350~700 ) marking symbol 2 2003-03-27 2SC2712 3 2003-03-27 2SC2712 4 2003-03-27 2SC2712 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · ... | Original |
5 pages, |
2SA1162 2SC2712 2SC2712 abstract |
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| Abstract: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN , 2SC2712-x-AE3-R 2SC2712L-x-AE3-R 2SC2712L-x-AE3-R Package SOT-23 Pin Assignment 1 2 3 E B C , MARKING LO LY LG LL 2SC2712-O 2SC2712-Y 2SC2712-G 2SC2712-L : Lead Plating 14www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-029 QW-R206-029.B 2SC2712 NPN , G 200~400 L 350~700 2 of 4 QW-R206-029 QW-R206-029.B 2SC2712 NPN SILICON TRANSISTOR TYPICAL ... | Original |
4 pages, |
TRANSISTOR BL 100 2SC2712L 2SC2712-Y 2SC2712-O 2SC2712-G R 2SC2712-G marking LG sot-23 2SC2712Y 2SC2712 2SC2712 abstract |
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| Abstract: Transistors SMD Type Silicon NPN Epitaxial Type Transistor 2SC2712 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 700 1 Low noise: NF = 1dB (typ.), 10dB (max) 0.55 High hFE: hFE = 70 +0.1 2.4-0.1 Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 , www.kexin.com.cn 1 Transistors SMD Type 2SC2712 Typlcal Characteristics Fig.1 Collector Emitter , Current Fig.4 Collector Current Fig.6 Base Emitter Voltage Transistors SMD Type 2SC2712 ... | Original |
3 pages, |
TRANSISTOR BL 100 smd ic marking LY smd transistor LL sot23 smd transistor marking LL 2SC2712 smd transistor LL smd Transistor LG smd transistor marking ly smd marking LG smd transistor NF smd marking ly smd transistor MARKING lg 2SC2712 abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2712 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURE · Low Noise: NF=1 dB (Typ),10dB(MAX) · Complementary to 2SA1162 2SA1162 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO , LO LY LG LL Typical Characteristics 2SC2712 ... | Original |
3 pages, |
2SA1162 2SC2712 2SC2712 abstract |
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| Abstract: 2SC 4633 s 2SC4576 2SC4576 2SC 4638 fé T 2sc4600 2sc3310 2SC 4639 h * 2sc2712 2SC2463 2SC2463 , 2SC2396 2SC2396 2SC1685 2SC1685 2SC1740 2SC1740 2SC 4642 0-A 2SC4168 2SC4168 2SC2712 2SC1623 2SC1623 2SD1306 2SD1306 2SC2405 2SC2405 2SC3052 2SC3052 2SC 4643 - s a ... | OCR Scan |
1 pages, |
2SC2463 2SC2749 2sc3052 2SC3447 2SC3796 2SC4576 2SC4618 2SC1674 2SC4738 4653 4638 2SC4783 2sd1314 4626 2SC2712 2SC3447 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| No abstract text available www.datasheetarchive.com/download/50900185-673967ZC/2sc2712.jpg |
User Photos | 23/05/2012 | 8.27 Kb | JPG | 2sc2712.jpg |
| - - TOSHIBA 2SC2712 CSB500J CSB500J CSB500J CSB500J 1000 470 - - MITSUBISHI www.datasheetarchive.com/files/murata/products/data/a07x/c82g0607.txt |
Murata | 14/01/1997 | 4.81 Kb | TXT | c82g0607.txt |
| - - TOSHIBA 2SC2712 CSA12 CSA12 CSA12 CSA12.5MTZ 100 47 - - TOSHIBA TMP90 TMP90 TMP90 TMP90 www.datasheetarchive.com/files/murata/products/data/a07x/c81g06d5.txt |
Murata | 17/09/1996 | 28.26 Kb | TXT | c81g06d5.txt |
| General Purpose Amplifier Transistor 2SC2712GT1/D (123.0kB) 2 100 www.datasheetarchive.com/files/on-semiconductor/taxonomy/bipolartransistors.htm |
On Semiconductor | 28/09/2007 | 122.37 Kb | HTM | bipolartransistors.htm |
| .42174P 42174P 42174P 42174P VJC=749.999M MJC=499.509M TF=713.346P XTF=500M + VTF=10 ITF=9.9976M 9976M 9976M 9976M TR=10N) * NPN .MODEL 2SC2712G NPN (IS=2.40584P 40584P 40584P 40584P BF=154.716 NF=1.00342 VAF=176.162 IKF=434.068M + ISE=51.0295F 0295F 0295F 0295F NE=1.21287 BR=1 www.datasheetarchive.com/files/spicemodels/misc/models/japan.lib |
Spice Models | 01/09/2003 | 54.33 Kb | LIB | japan.lib |
| *$ model description: "awb2n1613" *b Device model created by analog_uprev for 2n1613 on Fri Feb 2 18:03:16 IST 2001 .subckt awb2n1613 C B E + params: + IC_VBE=1.10250E-36 10250E-36 10250E-36 10250E-36 + IC_VCE=1.10250E-36 10250E-36 10250E-36 10250E-36 + STATE=1 + TEMP=0 + AREA=1 + STATE_FACTOR=0 + IS=3.567E-14 567E-14 567E-14 567E-14 + BF=9.684E+01 + NF=1.000E+00 + VAF=2.150E+02 + IKF=1.000E+01 + ISE=5.191E-15 191E-15 191E-15 191E-15 + NE=1.160E+00 + BR=1.236E+01 + NR=1.000E+00 + VAR=3.923E+01 + IKR=1.474E-01 474E-01 474E-01 474E-01 + ISC=6.614E-13 614E-13 614E-13 614E-13 + NC=1.256E+00 + RB=0.000E+00 + IRB=9.463E-04 463E-04 463E-04 463E-04 + RE= www.datasheetarchive.com/files/spicemodels/misc/bjn.lib |
Spice Models | 18/06/2008 | 1165.77 Kb | LIB | bjn.lib |
| * Library of Japanese Bipolar Transistor Models * Copyright Cadence Design Systems, Inc. 2002 All Rights Reserved. * * * $Revision: 1.9 $ * $Author: HIRASUNA $ * $Date: 11 May 2000 13:26:32 $ * * - * The parameters in this model library were derived from the data sheets for * each part. Each part was characterized using the Parts option. * - www.datasheetarchive.com/files/spicemodels/misc/jbipolar.lib |
Spice Models | 22/09/2001 | 165.84 Kb | LIB | jbipolar.lib |
| * Library of Japanese Bipolar Transistor Models * Copyright OrCAD, Inc. 1998 All Rights Reserved. * $Revision: 1.8 $ * $Author: rperez $ * $Date: 17 Nov 1998 10:47:02 $ * * - * The parameters in this model library were derived from the data sheets for * each part. Each part was characterized using the Parts option. * - *$ .m www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/mixed part list/spice-models-collection/jbipolar.lib |
Spice Models | 29/07/2012 | 165.82 Kb | LIB | jbipolar.lib |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2SC2712 | N/A | Silicon NPN | |
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| 2SC2712 | N/A | Low Power, General Purpose | |
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| 2SC2712BL | Toshiba | Si NPN Lo-Pwr BJT | |
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| 2SC2712-BL | N/A | Low Power, General Purpose | |
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| 2SC2712GR | Toshiba | Si NPN Lo-Pwr BJT | |
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| 2SC2712-GR | N/A | Low Power, General Purpose | |
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| 2SC2712O | Toshiba | Si NPN Lo-Pwr BJT | |
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| 2SC2712-O | N/A | Low Power, General Purpose | |
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| 2SC2712Y | Toshiba | Si NPN Lo-Pwr BJT | |
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| 2SC2712-Y | N/A | Low Power, General Purpose | |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| BC847 | BC847BMTF Buy | 2SC2712-GRTE85L Buy | Toshiba | Close | Small Signal | NPN Epitaxial Silicon Transistor SOT-23 |
| BCX70G | BCX70G Buy | 2SC2712 Buy | Toshiba | Close | Small Signal | NPN Epitaxial Silicon Transistor |
| BCX70G | BCX70G Buy | 2SC2712BL Buy | Jiangsu Changjiang Electronics Technology Co Ltd | Close | Small Signal | NPN Epitaxial Silicon Transistor |
| BCX70G | BCX70G Buy | 2SC2712G Buy | Unisonic Technologies Co Ltd | Close | Small Signal | NPN Epitaxial Silicon Transistor |
| BCX70G | BCX70G Buy | 2SC2712GR Buy | Jiangsu Changjiang Electronics Technology Co Ltd | Close | Small Signal | NPN Epitaxial Silicon Transistor |
| BCX70G | BCX70G Buy | 2SC2712GT1G Buy | ON Semiconductor | Close | Small Signal | NPN Epitaxial Silicon Transistor |
| BCX70G | BCX70G Buy | 2SC2712L Buy | Unisonic Technologies Co Ltd | Close | Small Signal | NPN Epitaxial Silicon Transistor |
| BCX70G | BCX70G Buy | 2SC2712O Buy | Jiangsu Changjiang Electronics Technology Co Ltd | Close | Small Signal | NPN Epitaxial Silicon Transistor |
| Infineon (Siemens) Part | Status | Industry Part | Manufacturer | Description |
| KEC Part | Industry Part | Manufacturer | Category | Description |
| Leshan Radio Company Part | Industry Part |
| LMSD601-RT1 Buy | 2SC2712 Buy |
| NTE Electronics Part | Industry Part |
| NTE2408 Buy | 2SC2712 Buy |
| NTE2408 Buy | 2SC2712G Buy |
| NTE2408 Buy | 2SC2712GR Buy |
| NTE2408 Buy | 2SC2712O Buy |
| NTE2408 Buy | 2SC2712Y Buy |
| NTE2408 Buy | 2SC2712-Y Buy |
| NTE2408 Buy | 2SC2712-YG Buy |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| MMBT3904LT1G Buy | 2SC2712 Buy | Toshiba | Close |
| MMBT3904LT1G Buy | 2SC2712BL Buy | Jiangsu Changjiang Electronics Technology | Close |
| MMBT3904LT1G Buy | 2SC2712-BL(TLSPFT) Buy | Toshiba | Close |
| MMBT3904LT1G Buy | 2SC2712G Buy | Unisonic Technologies | Close |
| MMBT3904LT1G Buy | 2SC2712GR Buy | Jiangsu Changjiang Electronics Technology | Close |
| MMBT3904LT1G Buy | 2SC2712-GR(T5L,F,T) Buy | Toshiba | Close |
| MMBT3904LT1G Buy | 2SC2712-GR(TLSPFT) Buy | Toshiba | Close |
| MMBT3904LT1G Buy | 2SC2712L Buy | Unisonic Technologies | Close |
| MMBT3904LT1G Buy | 2SC2712O Buy | Jiangsu Changjiang Electronics Technology | Close |
| MMBT3904LT1G Buy | 2SC2712Y Buy | Jiangsu Changjiang Electronics Technology | Close |
| Panasonic Part | Manufacturer | Similar Part | Manufacturer |
| Toshiba Part | Industry Part | Manufacturer | Description | Category |
| 2SC2712 Buy | 2SC1623 Buy | NEC Electronics | Transistor for Low-Frequency Small-Signal Amplification - S-Mini - SOT-346 | Transistors |
| 2SC2712 Buy | 2SC1623A Buy | NEC Electronics | Transistor for Low-Frequency Small-Signal Amplification - S-Mini - SOT-346 | Transistors |
| 2SC2712 Buy | 2SC2412K Buy | Rohm | Transistor for Low-Frequency Small-Signal Amplification - S-Mini - SOT-346 | Transistors |
| 2SC2712 Buy | 2SC2812 Buy | Sanyo Semiconductor | Transistor for Low-Frequency Small-Signal Amplification - S-Mini - SOT-346 | Transistors |
| 2SC2712 Buy | 2SC3134 Buy | Sanyo Semiconductor | Transistor for Low-Frequency Small-Signal Amplification - S-Mini - SOT-346 | Transistors |
| 2SC2712 Buy | 2SC3361 Buy | Sanyo Semiconductor | Transistor for Low-Frequency Small-Signal Amplification - S-Mini - SOT-346 | Transistors |
| 2SC2712 Buy | 2SC5845 Buy | Panasonic (Matsushita) | Transistor for Low-Frequency Small-Signal Amplification - S-Mini - SOT-346 | Transistors |
| 2SC2712 Buy | 2SD0601A Buy | Panasonic (Matsushita) | Transistor for Low-Frequency Small-Signal Amplification - S-Mini - SOT-346 | Transistors |
| 2SC2712 Buy | BC846 Buy | KEC | Transistor for Low-Frequency Small-Signal Amplification - S-Mini - SOT-346 | Transistors |
| 2SC2712 Buy | BC847 Buy | KEC | Transistor for Low-Frequency Small-Signal Amplification - S-Mini - SOT-346 | Transistors |
| Part | Similar Part | Notes |
| 2SC2712 Buy | 2N3247 Buy | |
| 2SC2712 Buy | 2SC2059 Buy | |
| 2SC2712 Buy | 2SC2462 Buy | |
| 2SC2712 Buy | 2SC2713 Buy | |
| 2SC2712 Buy | 2SC3052 Buy | Data from Sony Semiconductor Replacement Handbook 1991 |
| 2SC2712 Buy | 2SC3323 Buy | |
| 2SC2712 Buy | 2SC3340 Buy | |
| 2SC2712 Buy | 2SC3521 Buy | |
| 2SC2712 Buy | 2SC3928 Buy | |
| 2SC2712 Buy | 2SC4076 Buy |