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Part : 2SC2351-T1B Supplier : NEC Manufacturer : Bristol Electronics Stock : 1,755 Best Price : $0.2145 Price Each : $0.8250
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2SC2351 Datasheet

Part Manufacturer Description PDF Type
2SC2351 NEC HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD Original
2SC2351 NEC Semiconductor Selection Guide 1995 Original
2SC2351 NEC Semiconductor Selection Guide Original
2SC2351 N/A Japanese Transistor Cross References (2S) Scan
2SC2351 N/A Semiconductor Master Cross Reference Guide Scan
2SC2351 N/A The Transistor Manual (Japanese) 1993 Scan
2SC2351 N/A High Frequency Device Data Book (Japanese) Scan
2SC2351 N/A Transistor Substitution Data Book 1993 Scan
2SC2351 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan

2SC2351

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES â'¢ NF 1.5 dB TYP. f= 1.0 GHz * MAG 14 dB , Specification © NEC Corporation 1984 2SC2351 TYPICAL CHARACTERISTICS (T a = 25 C) DC CURRENT GAIN vs , Voltage-V 2 20 30 0.5 1 2 5 10 20 Ic-Collector Current-mA 50 70 2SC2351 CD "O c tf CO "D < D Z J 0 CD < 0 Ic-Collector Current-mA 3 2SC2351 -
OCR Scan

2SC2351

Abstract: RF TRANSISTOR 10GHZ low noise isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2351 DESCRIPTION ·Low Noise NF = 1.5 dB TYP. ; @ f = 1 GHz ·High Maximum Available Gain MAG = 14 dB TYP. ; @ f = 1 GHz APPLICATIONS ·Designed for use as UHF oscillators and a UHF mixer in a tuner of a TV , isc Silicon NPN RF Transistor 2SC2351 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise , RF Transistor isc Websitewww.iscsemi.cn isc RF Product Specification 2SC2351 INCHANGE
INCHANGE Semiconductor
Original
RF TRANSISTOR 10GHZ low noise 10GHz mixer marking r2 10GHz RF mixer RF TRANSISTOR 10GHZ UHF transistor GHz

2SC2351

Abstract: 2SC2351 High Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor PACKAGE DIMENSIONS in m illim eters (inches) 2.5 *8 ! {0 098) · Low Noise Figure: NF=1.5 dB TYP. (f= 1.0 GHz) · High Maximum Available Gain: MAG=14dB TYP. (f- 1.0 GHz) 0 5 l 8f| (0 02 ) 1.5 0 5 ABSOLUTE M A , hFE Classification M AR K h FE R2 4 0 -1 2 0 R3 1 0 0 -2 0 0 109 2SC2351 TY PIC AL , < -Collector Current -»nA 110 2SC2351 N r -Nttse Figu»! li -Coflector Coment -m A 5 111
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OCR Scan

2SC2499

Abstract: 2SC3531 2SC3098 2SC3099 2SC3429 2SC3545 2SC2759 2SC3841 2SC3841 2SC2351 2SC2351 2SC2408 2SC3544 2SC257QA 2SC3355
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OCR Scan
2SC3531 2SC3559 2SC3124 2SC3510 2SC3127 2SC3110 2SC2499 3771 3771 nec 2SC3761 2sc3355 hitachi 2SC3751 2SC3978 2SC3979 2SD1441 2SD1848
Abstract: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES · · NF MAG 1.5 dB 14 dB TYP. TYP. @ f = 1.0 GHz @ f = 1.0 GHz PACKAGE DIMENSIONS (U nits: m m) 2 .8 ± 0.2 1.5 "3- Ò ABSOLUTE MAXIMUM RATINGS (T a = 25 °C , CURRENT Vc E = 1 0 V COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 2SC2351 Iife-DC Current Gain , 2 NEC 2SC2351 Ic-Collector Current-mA 3 -
OCR Scan
P10350EJ3V1DS P10350EJ3V1DS00

2SC2351

Abstract: marking R2 DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES · NF 1.5 dB TYP. @ f = 1.0 GHz · MAG 14 dB , Published March 1997 N Printed in Japan * Old Specification / New Specification © 1984 2SC2351 , 10 20 IC-Collector Current-mA 50 70 2SC2351 NF, Ga vs. COLLECTOR CURRENT NF-Noise , 1 3 5 7 10 30 0 IC-Collector Current-mA 3 2SC2351 No part of this
NEC
Original

2SC2495

Abstract: 2SD889 2SC2820 2SC 3098 S X S ZSC3773 2SC2351 2SC2734 2SC2845 2SC3838K 2SC 3099 X S 2SC3771 2SC2351
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OCR Scan
2SC2377 2SC2636 2SC2512 2SC1215 2SC2480 2SC2841 2SC2495 2SD889 2SC1565 2SC2915 2SD1010 nec 3114 ZSC2999
Abstract: SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in millimeters M AG 14 dB TV P. · f = 1.0 GHz · NF 1.5 dB TY P. ' f = 1 .0 G H z ABSOLUTE M AXIM UM RATINGS { T ,« 2 5 ° C ) C o lle c to r to Base Voltage , 4 0 t o 1 20 200 I 235 2SC2351 TYPICAL CHARACTERISTICS (Ta - 25°C I D C C U R R E N T , 2SC2351 N F , Gb v «. C O L L E C T O R C U R R E N T 237 -
OCR Scan

PR240

Abstract: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES · * NF M AG 1.5 dB 14 dB TYP. TYP. f = 1.0 G H z f = 1.0 G H z , GAIN vs. COLLECTORCURRENT Vc E = 10 V 100 2SC2351 200 COLLECTOR CURRENT vs. BASE TO EMITTER , VcB-Collector to Base Voltage-V Ic-Collector Current-mA 2 NEC 2SC2351 Ic-Collector Current-mA 3 NEC 2SC2351 No pa rt of th is d o cu m e n t may be cop ie d o r rep ro d u ce d in any
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OCR Scan
PR240 P10350EJ3V1

2SC2407A

Abstract: 2SC2348 - 122 - m 2SC2348 2SC2349 2SC2351 2SC2352 2SC2353 2SC2356 2SC2359 2SC2360 (H) 2SC2362 2SC2362K 2SC2366 2SC2367 2SC2368 2SC2369 2SC2371 2SC2373 2SC2377 2SC2379 2SC2380 2SC2381 2SC2383 2SC2388 2SC2389 2SC2390 2SC2391 2SC2395 2SC2396 2SC2404 2SC2405 2SC2406 2SC2407 2 S C 2 4 0 7 (1) 2SC2407A 2SC2408 2SC2408(A) 2SC2410 % ft £ iÉ 11 (V) M X Ë fà VcEO (V) 30 30 25 30 30 500 45 0 30 120 , * ft TO- 92ff$ TO-920 (SC-59) n m. 2SC2348 2SC2349 2SC2351 2SC2352 2SC2353 2SC2356 2SC2359
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OCR Scan
2-10H1A 200MH 900MH 800MH 2SA1016 2SA1016K TC-19
Abstract: 2SC2351 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V)12è V(BR)CBO (V)25 I(C) Max. (A)70m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition)15 h(FE) Max. Current gain.200 @I(C) (A) (Test Condition)20m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq4.5G @I(C) (A) (Test Condition)20m @V(CE) (V) (Test Condition)10 Power Gain Min. (dB)14Ã' @I(C American Microsemiconductor
Original

2SC2553

Abstract: 2SC3531 2SC4910 2SC2586 2SC1841 9sn»4i 2SC1845 2SC1845 2SC3122 2SC2999 2SC3040 2SC2555 2SC2369 2SC2351 2SC2758
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OCR Scan
2SC2829 2SC3277 2SC2553 2SC2914 2SC3358 2SC2802 2SC3536 2SC2837 2sd1048 2SC2828 2SC2830 2SC2831 2SC2139

Toshiba 355-1

Abstract: 2SC3555 2SC2351 2SC3707 2SC 3548 S 2 2SC3547A 2SC3126 2SC3477 2SC 3549 / 2SC3150 2SC3148 2SC3531
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OCR Scan
2SC3322 2SD1431 2SC3774 2SC3170 2SC4158 Toshiba 355-1 2SC3555 3563 2SC351 2SC3556 2SC4427 2SC3657 2SC3506 2SC4428

2sc2694

Abstract: 2SC3545 2SC24Û4 2SC4771K 2SC 3126 B ÃL 2SC3302 2SC 3127/ B ÃL 2SC3774 2SC3429 2SC2351 2SC2845 2SC
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OCR Scan
2SC3770 2SC3828 2SC4229 2SC2847 2SC2736 2SC4269 2sc2694 2SC1730 2SC3360

3892A

Abstract: 2SC3435 3924 0 ÌL 2SC3559 2SC2979 2SC3979 2SC 3926 ® S 2SC3774 2SC3547B 2SC2351 2SC2734 2SC3707
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OCR Scan
2SD1849 2SC3884 2SC3885 RT1N140C DTC143TS 2SC2803 3892A 2SC3435 2SC3584 2sc3886 2SC4123 2SC4742 2SC4124 2SD1739

k 3878

Abstract: t 3866 - 175 - m s Type No. ít « Manuf. = * SANYO TOSHIBA B m NEC B ÃL HITACHI « ± a FUJITSU te t MATSUSHITA = K MITSUBISHI â¡ - A ROHM 2SC 3860 ^ = » EN1211 UN42Ì5 RTÌN140S DTC114TS 2SC 3861 te T 2SC2548 2SC2750A 2SC 3862 2SC3841 2SC3867 2SC3130 2SC 3863 = m RN1405 RT1N234C DTC123YK 2SC 3864 = £ RN1205 RT1N234S DTC123YS 2SC 3865 ^ 2SC4161 2SC3310 2SC3570 2SC2816 2SC4026 2SC4129 2SC 3866 y 2SC3150 2SC3559 2SC2979 2SC3379 2SC 3867 s il 2SC3774 2SC3862 2SC2351 2SC3707
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OCR Scan
2SC4423 2SC3759 2SC2712 2SD1847 2SC3729 2SC3497 k 3878 t 3866 2sc4291 2sc3866 ZSC4160 2SC3569 2SC3969 2SC3571 2SC3572

VCE-12V

Abstract: 2SC2351 SA 1 4 2 4 B® ffljÉ : v-f 1 njfcifHffl ¡tts : &m®tzmmLimw 7*'J 7 K IC KLT» NPN tlSii 2SC2351.
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OCR Scan
2SC3314 VCE-12V 1S21S12

2SD636

Abstract: SN1402 2SC3254 2SD553 2SD1442A 2SC 3428 2SC3255 2SC3345 2SD1443A 2SC 3429 y * S 2SC2351 2SC3513
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OCR Scan
SN1402 RT1N141C DTC114EK RT1N441S DTC144ES UN4212 2SD636 DTC114ES DTC124ES UN4211 UN2211 RN1204 UN4213

2SC3763

Abstract: 2SD1267A 2SC3130 2SC 3838 "" â¡ -A 2SC3773 2SC3120 2SC2351 2SC2734 2SC3707 2SC 3839 / â¡ â'"A 2SC3771
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OCR Scan
2SC3356 2SC3872 2SC3763 2SC3691 2SC4008 2SD1267A 3841 3843 3844 2SC4085 2SC4415 2SC3087 2SC2335 2SC3870

2SK2396

Abstract: PC2763 (V) 2SC1927(NE73440B) 2SC2148(NE73435) 2SC2149(NE02135) 2SC2351(NE02133) 2SC2954 2SC3355(NE85632 , 2SC2570A 3 4 3 4 2SC3356 2SC4093 2SC4228 2SC5013 2SC2351 2SC4092 2SC4185 2SC2351 2SC4092 2SC3356 2SC4093 2SC4226 2SC5011 2SC2351 2SC4092 2SC3545 2SC4184 2SC4185 2SC4568 2SC4570 2SC4569 2SC4571 2SC4185 3 , ) (2.0×1.25, t = 0.6) 2SC2351 2SC4225 2SC4092 2SC5004 2SC5431 2SC4536 2SC5337 2SC4568 2SC4570 2SC4703 , NE68439E NE68539E NE68430 NE68530 NE58219 NE58119 ELAJ No. 2SC1733 2SC1926 2SC1927 2SC2148 2SC2149 2SC2351
NEC
Original
PC2763 PC3210 PC2711 2SK2396 pc1658 ne27283 2SC3357 upc2713 X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA

tm 1621

Abstract: BD 811 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2351 DESCRIPTION ·Low Noise NF = 1.5 dB TYP. ; @ f = 1 GHz ·High Maximum Available Gain MAG = 14 dB TYP. ; @ f = 1 GHz APPLICATIONS ·Designed for use as UHF oscillators and a UHF mixer in a tuner of a TV , isc Silicon NPN RF Transistor 2SC2351 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise , RF Transistor isc Websitewww.iscsemi.cn isc RF Product Specification 2SC2351 INCHANGE
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OCR Scan
BF5457 BF5484 BFS88 5T2907A BT3904 tm 1621 BD 811 MBD6050 BTA 36 BT6429 1SS123 BCX17 BF554 BC2107

nf025

Abstract: NE27283 2SC24Û4 2SC4771K 2SC 3126 B ÃL 2SC3302 2SC 3127/ B ÃL 2SC3774 2SC3429 2SC2351 2SC2845 2SC
NEC
Original
nf025 upc27 x-band power transistor 100W P147D NE42484 uPG508 950MH 500MH PC2723T PC3206GR PC3211GR PC2710
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