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Part : 2SC2120-0 Supplier : Toshiba Manufacturer : Bristol Electronics Stock : 1,800 Best Price : - Price Each : -
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2SC2120 Datasheet

Part Manufacturer Description PDF Type
2SC2120 Various Russian Datasheets Transistor Original
2SC2120 Bharat Electronics Transistor Selection Guide Scan
2SC2120 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan
2SC2120 Micro Electronics Medium Power Amplifiers and Switches Scan
2SC2120 Micro Electronics Semiconductor Device Data Book Scan
2SC2120 N/A The Transistor Manual (Japanese) 1993 Scan
2SC2120 N/A Transistor Substitution Data Book 1993 Scan
2SC2120 N/A Transistor Shortform Datasheet & Cross References Scan
2SC2120 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SC2120 N/A Basic Transistor and Cross Reference Specification Scan
2SC2120 N/A The Japanese Transistor Manual 1981 Scan
2SC2120 N/A Japanese Transistor Cross References (2S) Scan
2SC2120 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SC2120 N/A Cross Reference Datasheet Scan
2SC2120 N/A Shortform Transistor PDF Datasheet Scan
2SC2120 Panasonic Medium Power Amplifiers and Switches Scan
2SC2120 Semico Medium Power Transistors Scan
2SC2120 Toshiba SILICON NPN EPITAXIAL TYPE(PCT PROCESS) Scan
2SC2120 Toshiba TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS) Scan
2SC2120 Toshiba NPN Transistor Scan
Showing first 20 results.

2SC2120

Catalog Datasheet MFG & Type PDF Document Tags

2SC2120

Abstract: 2sC2120 transistor ICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS), 2sc2120 o Audio Power Amplifier Applications W : hpE= 100~320 vomtumbtii-to 2SA950 ¿xyyjy^j'VKZbt-to 1W Output Applications Complementary to 2SA950 , to the value of hj>E(l) the 2SC2120 is classified as follows. * PCTSHilCJ; To Produced by Perfect Crystal Device Technology. 823 CLASSIFICATION MIN. MAX. 2SC2120 â'" 0 100 200 2SC2120 â'" Y 160 320 , 'tfi â'¢x.iyfiNIKE. V0E (V) ifi - VBE 824 2sc2120 hps â'" Iq vCE(eat) ~ Ic 3 5 1 0 3 0 50 1 0 0 30 0 500 1000
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OCR Scan
2sC2120 transistor Audio Power Amplifier TOSHIBA 2SC2120-Y 2SC2120-O 2SC2120 0 transistor 2sc2120

2SC2120

Abstract: 2SA950 2SC2120 NPN (PCT) 2SC2120 : mm · : hFE (1) = 100~320 · B 1 W · 2SA950 (Ta = 25°C) VCBO 35 V VCEO 30 V VEBO 5 V IC 800 mA IB 160 mA PC , ) Cob O: 100~200, Y: 160~320 1 2007-11-01 2SC2120 IC ­ VCE hFE ­ IC 1000 1000 , 80 100 120 Ta 140 160 180 (°C) 2 2007-11-01 2SC2120 · ·
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Original
SC-43

2SC2120

Abstract: 2sC2120 transistor SEMICONDUCTOR TOSHIBA TRANSISTOR. T O SH IB A 2SC2120 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TECHNICAL DATA (2SC2120) AUDIO POWER AMPLIFIER APPLICATIONS Unit in mm . 5.1 M A , ay re su lt fro m its use. 2SC2120 - 1_ 1996-09-02_ TOSHIBA , . SEMICONDUCTOR T O SH IB A 2SC2120 TECHNICAL DATA (2SC2120) le - VCE hFE - IC VCE(sat) - IC ic - vbe BASE-EMITTER VOLTAGE VBE (V) 2SC2120 - 2* 1996-09-02 TOSHIBA CORPORATION
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OCR Scan

2SC2120

Abstract: 2SA950 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications · High hFE: hFE (1) = 100~320 · 1 watts amplifier applications. · Unit: mm Complementary to 2SA950 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V , 2003-03-24 2SC2120 2 2003-03-24 2SC2120 RESTRICTIONS ON PRODUCT USE 000707EAA ·
Toshiba
Original

2SC2120

Abstract: 2sC2120 y transistor TO SH IBA TOSHIBA TRANSISTOR 2SC2120 AUDIO POWER AMPLIFIER APPLICATIONS 2SC2120 SILOCON NPN EPITAXIAL TYPE (PCT PROCESS) Unit in mm . 5.1 MAX. · High hEE : hEE (i) = 100~320 · 1 Watts Amplifier Applications. · Complementary to 2SA950 MAXIMUM RATINGS (Ta = 25°C) 0.45 0.55 MAX , 2001 05-31 - TO SH IBA 2SC2120 IC - VCE hFE - IC VCE(sat) - IC IC - VBE BASE-EMITTER VOLTAGE VBE (V) 2 2001 05-31 - TO SH IBA 2SC2120 RESTRICTIONS ON PRODUCT USE
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OCR Scan
2sC2120 y transistor

2SC2120

Abstract: 2SC2120Y 2SC2120 0.8 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES High DC Current Gain Complementary to 2SA950 G H J CLASSIFICATION OF hFE Product-Rank 2SC2120-O 1Emitter 2Collector 3Base A D 2SC2120-Y Range 100~200 Millimeter Min. Max. 4.40 , of 2 2SC2120 Elektronische Bauelemente 0.8 A , 35 V NPN Plastic Encapsulated Transistor
SeCoS
Original
2SC2120Y 2sc212 2SC2120O 2SC2120Y transistor

2SC2120

Abstract: 2sc2120 equivalent ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package , ST 2SC2120 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain , , Stock Code: 724) ® Dated : 07/12/2002 ST 2SC2120 Ta=25 SEMTECH ELECTRONICS LTD
Semtech Electronics
Original
2sc2120 equivalent

2SC2120

Abstract: 2SA950 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications · High hFE: hFE (1) = 100~320 · 1 watts amplifier applications. · Unit: mm Complementary to 2SA950 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 , 2007-11-01 2SC2120 2 2007-11-01 2SC2120 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL
Toshiba
Original

2SA950

Abstract: 2SC2120 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications · High hFE: hFE (1) = 100~320 · 1 watts amplifier applications. · Unit: mm Complementary to 2SA950 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V , ~200, Y: 160~3200 1 2003-03-24 2SC2120 2 2003-03-24 2SC2120 RESTRICTIONS ON
Toshiba
Original

2SA950

Abstract: 2SC2120 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications · High hFE: hFE (1) = 100~320 · 1 watts amplifier applications. · Unit: mm Complementary to 2SA950 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 , 2007-11-01 2SC2120 2 2007-11-01 2SC2120 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation
Toshiba
Original

2SD811 TOSHIBA

Abstract: 2SC510 fc\ "F *± a E±ä ^ ± ii s a E D ·tt-vírv tfvírv W * m TOSHIBA 2SC2120 2SD880 2SD880 2SC510 2SC510 , 2SD428 2SD867 2SD867 2SC779 2SD880 2SD880 2SD880 2SD877 2SD877 2SD877 2SC2120 2SD811 2SD867 2SD811 2SD811
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OCR Scan
2SD241 2SD1266 2SC1398 2SD1485 2SD1270 2SD2023 2SD811 TOSHIBA 2SD2061 RY 228 2SD261Y 2SD228 2SD234 2SD235 2SC236 2SD237 2SD238

2SC2120

Abstract: 2sc2120 equivalent ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package , ST 2SC2120 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain , , Stock Code: 724) R Dated : 07/12/2002 ST 2SC2120 Ta=25 SEMTECH ELECTRONICS LTD
Semtech Electronics
Original

2SC1885

Abstract: 2Sc2565 ft 0 0 fi fi fi fi a 2SD718 2SD427 2SD551 2SC2120 2SD1047 2SD1047 2SD845 2SC2565 2SD345 2SC2565 , 2SD863 2SC1195 2SPS11 2SC2832 2SD2052 2SD551 2SD551 2SD665 2SD734 i 2SC2910 2SC2910 2SC2910 2SC2120
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OCR Scan
2SD525 2SD842 2SD2256 2SC1940 2SC1885 2SCI885 2SC2565 fujitsu IL 741 736a Toshiba 2sc2565 2SD725 2SD726 2SD727 2SD823 2SD2233 2SD821

2SC1815

Abstract: 2sc372 2SC2274 2SC380 2SC1815 2SC372(G) 2SC2120 2SC2120 2SC2120 2SC1815 2SC503 2SC454 2SC458 2SC458(LG
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OCR Scan
2SC944 2SC387A 2SC2410 2SC4641 2SC1215 2SC1843 2sc1741 2sc2061 2sc2381 2sc1907 2SC2284 2SC945 2SC947 2SC948 2SC1959

2SC2120

Abstract: 2sc2120 equivalent ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package , ) Dated : 07/12/2002 ST 2SC2120 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit , 2SC2120 Ta=25 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Semtech International Holdings
Semtech Electronics
Original

2SC1006

Abstract: 2SC1885 2SC1740LN 2SC 1996 a n. 2SD438 2SC2120 2SC1852 2SC3377 2SC 1997 B n 2SD545 2SC2120 2SC1851 2SC3377 , 2SC 2000 "" a n. 2SC2210 2SC1815 2SC1890 2SC1318 2SC2410 2SC 2001 / B « 2SD734 2SC2120 2SD467
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OCR Scan
2SC1957 2SC2988 2SC2229 2SC2839 2SC710 2SC763 2SC1006 2SC3359 2sd1944 2SC2314 2SC2078 2SC2075 2SC1678 2SC2407

2SD454

Abstract: 2SC901 * 2SD 466 2SD 467 2SD 468 _ 2SD 469 - 0 a ED 2SD545 2SD400 2SC2120 2SC2120 2SD867 2SC2001 , 2SC2060 0 « m * 2SD 470 ^ 2S0 471 ^ T * 2SD400 2SC2120 2SD524 2SD524 2SD526 W2SÜ1060 2SD526
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OCR Scan
2SC1449 2SD473 2SD647 2SC901 2SC1333 2SC1667 2SD454 2SC2516 NEC 2SD400 E 2SD439 2SD457 2SD642 2SD1196 2SD635 2SD633

2SC2120

Abstract: ZZ25 TOSHIBA_2SC2120 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC2120 AUDIO POWER AMPLIFIER APPLICATIONS Unit in mm â'¢ High hFE : hFE(1) = 100-320 â'¢ 1 Watts Amplifier Applications. â'¢ Complementary to 2SA950 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power , information contained herein is subject to change without notice. 1996-09-02 1/2 TOSHIBA 2SC2120 IC - VCE
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OCR Scan
ZZ25IZI ZZ25 961001EAA2

2SC2120

Abstract: 2sC2120 y transistor ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package , ) R Dated : 07/12/2002 ST 2SC2120 Characteristics at Tamb=25 OC Symbol Min. Typ. Max , 2SC2120 Ta=25 SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a
Semtech Electronics
Original

2SC 1207

Abstract: 2SC1741A 2SD1682 2SC2274 2SC3708 2SC2120 2SC1959 2SC1627 2SC1626 2SC1626 2SC2120 2SC1626 2SC2001 2SC2002 2SC2003
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OCR Scan
2SC1906 2SC1687 2SC2926 2SC1253 2SC2889 2SC1214 2SC 1207 2SC1741A toshiba 2sc1384 2SC1185 2SC1187 2SC1188 2SC1189 2SC1190 2SC1192

b1375

Abstract: 2sk270a 2SC3423 2SC2233 2SC2120 2SC2120 2SC2120 2SC2120 2SC3421 2SC3421 2SC2242 2SC2242 2SC2242 2SC2075 2SD718
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OCR Scan
2SA1015 MG15G1AL2 S-AU15 b1375 2sk270a 2SK150A 2SA1051b MG50G2CL1 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790

2120 transistor

Abstract: 2SC2120 Range O 10 0-200 Y 16 0 -3 2 0 31 Typical Characteristics 2SC2120 Ic - Vc e hFB
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OCR Scan
2120 transistor
Showing first 20 results.