| Contextual Datasheet Results |
1 - 50 of about 102 for 2SC1815 |
 |
First line: Micro Commercial Components 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL Silicon Abstract: .. Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A .. datasheet abstract.. |
71.5 Kb |
2 Pages |
 |
 |
|
|
First line: UNISONIC TECHNOLOGIES 2SC1815 AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY TRANSISTOR FEATURES Collector-Emitter voltage Abstract: .. UNISONIC TECHNOLOGIES CO., LTD. 2SC1815 NPN SILICON TRANSISTOR. www.unisonic.com.tw 1 of 4. Copyright © 2008 Unisonic Technologies Co., Ltd QW-R201-006,E. AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY .. datasheet abstract.. |
205.32 Kb |
4 Pages 
|
|
|
|
|
First line: Features omponents Marilla Street Chatsworth 2SC1815 2SC1815 Silicon Epitaxial Transistor Designed Amplifier Abstract: .. Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A .. datasheet abstract.. |
74.93 Kb |
1 Pages |
|
|
|
|
First line: SEMICONDUCTOR Shandong Yiguang Electronic Joint stock 2SC1815LT1 EPITAXIAL SILICON TRANSISTOR Package SOT-23 TECHNICAL Abstract: .. 2SC1815. 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1.6. T A. = 100°C. 25°C. – 55°C. 50. 20. 10. 50. 2. 1. 0.5. 0.2. 0.1. 0 0.4 0.8 1.2 1.6 2.0. T A = 25°C. 100. 80. 60. 40. 20. 0. I. C. , COLLECTOR CURRENT. mA Fig.1 Grounded emitter propagation .. datasheet abstract.. |
178.4 Kb |
3 Pages |
|
|
|
|
First line: 2SC1815 TOSHIBA Transistor Silicon Epitaxial Type PCT process 2SC1815 Audio Frequency General Abstract: .. 2SC1815. 2003-03-27 1. TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC1815. Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications. High .. datasheet abstract.. |
137.9 Kb |
4 Pages |
|
|
|
|
First line: Type Transistor 2SC1815 Transistors SOT-23 2.9-0.1 0.4-0.1 Unit 2.4-0.1 Features Power dissipation Abstract: .. 2SC1815 Typlcal Characteristics Fig.1 Collector Emitter Voltage Fig.2 Collector Current Fig.3 Collector Current Fig.4Collector Current Fig.5 Ambient Temperature Fig.6 Emitter Current .. datasheet abstract.. |
138.36 Kb |
2 Pages |
|
|
|
|
First line: 2SC1815 Elektronische Bauelemente RoHS Compliant Product suffix specifies halogen lead-free Type Plastic Abstract: .. Elektronische Bauelemente. 2SC1815 NPN Type. Plastic Encapsulate Transistors. TO-92. î FEATURES . Power Dissipation PCM: 0.4 W Ta = 25 : . Collector Current ICM: 0.15 A. . Collector-Base Voltage .. datasheet abstract.. |
180.11 Kb |
2 Pages 
|
|
|
|
|
First line: 2SC1815 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into four Abstract: .. ST 2SC1815. NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. .. datasheet abstract.. |
248.28 Kb |
2 Pages |
|
|
|
|
First line: 2SC1815 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into four Abstract: .. ST 2SC1815. NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain .. datasheet abstract.. |
229.17 Kb |
2 Pages |
|
|
|
|
First line: 2SC1815 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into four Abstract: .. ST 2SC1815. NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current. gain .. datasheet abstract.. |
234.23 Kb |
2 Pages |
|
|
|
|
First line: 2SC1815 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into four Abstract: .. ST 2SC1815. NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current. gain .. datasheet abstract.. |
179.67 Kb |
2 Pages |
|
|
|
|
First line: UNISONIC TECHNOLOGIES 2SC1815 EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY TRANSISTOR Abstract: .. UNISONIC TECHNOLOGIES CO., LTD. 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR. www.unisonic.com.tw 1 of 4. Copyright © 2005 Unisonic Technologies Co., Ltd QW-R201-006,D. AUDIO FREQUENCY AMPLIFIER .. datasheet abstract.. |
158.15 Kb |
4 Pages
|
|
|
|
|
First line: 2SC1815 EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY TRANSISTOR FEATURES Collector-Emitter Abstract: .. UTC 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-006,A AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES *Collector-Emitter .. datasheet abstract.. |
59.92 Kb |
2 Pages |
|
|
|
|
First line: BL9148 General infrared Remote Control Transmitter Description BL9148 CMOS developed general infrared Abstract: .. 2SC1815. 10. TLN105 .. datasheet abstract.. |
22.44 Kb |
2 Pages |
|
|
|
|
First line: COMPONENTS LTD. 2SC1815 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS EPITAXIAL PLANAR TRANSISTOR Description Designed Abstract: .. 2SC1815. DISCRETE SEMICONDUCTORS. R. DC COMPONENTS CO., LTD.. TECHNICAL SPECIFICATIONS OF NPN .. datasheet abstract.. |
208.89 Kb |
1 Pages |
|
|
|
|
First line: 2SA1015 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into three Abstract: .. ST 2SC1815 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g. Absolute Maximum Ratings .. datasheet abstract.. |
250.07 Kb |
2 Pages |
|
|
|
|
First line: 2SA1015 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into three Abstract: .. ST 2SC1815 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g. Absolute Maximum Ratings .. datasheet abstract.. |
230.43 Kb |
2 Pages |
|
|
|
|
First line: 2SA1015 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into three Abstract: .. ST 2SC1815 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g. Absolute Maximum Ratings .. datasheet abstract.. |
199.3 Kb |
2 Pages |
|
|
|
|
First line: 2SA1015 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into three Abstract: .. ST 2SC1815 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g. Absolute Maximum Ratings .. datasheet abstract.. |
143.18 Kb |
2 Pages |
|
|
|
|
First line: MDT80P10 USB / UART Features This document specifies RS232C communication protocol Advance-Intelligent UPS. Special Abstract: .. Q3 2SC1815. Q4 2SA1015. 1 2 3 4. CN2. 1 2 3 4. CN1 USB-F. R3 510. R1 7.5K. R2 2K. C1 104 50V. C2 104 C3 1uF 25V. Q1 .. datasheet abstract.. |
38.64 Kb |
3 Pages |
|
|
|
|
First line: HONEY TO-92 Transistors Japan Type Equivalent Table Silicon Epitaxial Planar Transistor To-92 Abstract: .. 2SC1361 HN / BC 549 / 9014 2SC1641 HN / BC 547 / 9014 2SC1815 HN / BC 546 / 9014. 2SC1363 HN / BC 548 / 9014 2SC1642 HN / BC 548 / 9014 2SC1840 HN / BC 547 / 9014. 2SC1364 HN / BC 547 / 9014 2SC1643 HN / BC 547 / 9014 2SC1842 .. datasheet abstract.. |
58.1 Kb |
1 Pages |
|
|
|
|
First line: 2SA1015 EPITAXIAL SILICON TRANSISTOR FREQUENCY AMPLIFIER TRANSISTOR FEATURES Collector-Emitter Voltage BVCEO=-50V Collector Abstract: .. =-50V *Collector current up to 150mA *High hFE linearity *Complement to 2SC1815 TO-92 1 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified .. datasheet abstract.. |
66.39 Kb |
2 Pages |
|
|
|
|
First line: 2SA1015 EPITAXIAL SILICON TRANSISTOR FREQUENCY AMPLIFIER TRANSISTOR FEATURES Collector-Emitter Voltage BVCEO=-50V Collector Abstract: .. =-50V *Collector current up to 150mA *High hFE linearity *Complement to 2SC1815 TO-92 1 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified .. datasheet abstract.. |
60.34 Kb |
2 Pages |
|
|
|
|
First line: 2SA1015 L TOSHIBA Transistor Silicon Epitaxial Type PCT process 2SA1015 L Audio Frequency Amplifier Abstract: .. Complementary to 2SC1815 L Maximum Ratings Ta 25°C Characteristics Symbol Rating Unit. Collector-base voltage VCBO 50 V. Collector-emitter voltage VCEO 50 V. Emitter-base voltage VEBO .. datasheet abstract.. |
105.9 Kb |
3 Pages |
|
|
|
|
First line: 2SA1015 L TOSHIBA Transistor Silicon Epitaxial Type PCT process 2SA1015 L Audio Frequency Amplifier Abstract: .. • Complementary to 2SC1815 L Maximum Ratings Ta = = = = 25°C Characteristics Symbol Rating Unit. Collector-base voltage VCBO −50 V. Collector-emitter voltage VCEO −50 V. Emitter-base voltage .. datasheet abstract.. |
226.5 Kb |
3 Pages |
|
|
|
|
First line: 2SA1015 TOSHIBA Transistor Silicon Epitaxial Type PCT process 2SA1015 Audio Frequency General Abstract: .. • Complementary to 2SC1815. Maximum Ratings Ta = = = = 25°C Characteristics Symbol Rating Unit. Collector-base voltage VCBO −50 V. Collector-emitter voltage VCEO −50 V. Emitter-base voltage .. datasheet abstract.. |
225.06 Kb |
3 Pages |
|
|
|
|
First line: Micro Commercial Components Small Signal Transistor Cross Reference Group Package SOT-23 PACKAGE Abstract: .. 2SC1815 400 150 60 50 0.1 60 70 700 2 6 0.25 100 10 80 2SC1815 2SC945 400 150 60 50 0.1 60 70 700 1 6 0.3 100 10 150 2SC945 MMBT3904 200 200 60 40 0.1 30 100 300 10 1 0.3 50 5 300 MMBT3904LT1 MMBT3906 200 -200 .. datasheet abstract.. |
28.02 Kb |
4 Pages 
|
|
|
|
|
First line: UNISONIC TECHNOLOGIES 2SA1015 FREQUENCY AMPLIFIER TRANSISTOR FEATURES Collector-Emitter Voltage BVCEO=-50V Collector Current Abstract: .. 50V * Collector Current up to 150mA * High hFE Linearity * Complement to UTC 2SC1815. Lead-free: 2SA1015L Halogen-free: 2SA1015G. Ñ ORDERING INFORMATION. Ordering Number Pin Assignment. Normal .. datasheet abstract.. |
134.2 Kb |
4 Pages
|
|
|
|
|
First line: SEMICONDUCTOR Shandong Yiguang Electronic Joint stock 2SA1015LT1 EPITAXIAL SILICON TRANSISTOR Package SOT-23 TECHNICAL Abstract: .. * Complement to 2SC1815 * Collector Current : Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25°C Characteristic Symbol Rating Unit. Collector-Base Voltage Vcbo -60 V. Collector-Emitter Voltage Vceo .. datasheet abstract.. |
163.58 Kb |
3 Pages |
|
|
|
|
First line: TA2160FN Toshiba Bipolar Integrated Circuit Silicon Monolithic TA2160FN Consumption Current Stereo Headphone Abstract: .. 2SC1815 2SC1815. 1 F. V CC. 1 F. 4.7 F. BST. PW. A. PW. C. PW. B. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. BST SW. RF&REF. 30. 29. 28. 27. 26 .. 2SC1815 2SC1815. 1 F. V CC. 1 F. 4.7 F. BST. PW. A. PW. C. PW. B. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. BST SW. RF&REF. 30. 29. 28. 27. 26 .. datasheet abstract.. |
255.41 Kb |
17 Pages 
|
|
|
|
|
First line: SC9148 CMOS SC9148A SOP-16 Vcc=2.2 ~5.0V DIP-16 CMOS SC9148A SC9148S SC9148 DIP-16 Abstract: .. 2SC1815. 10k. 10. 100pF. 100pF. 100pF. 100pF. 100pF. 100pF. 100pF. 100pF. K1~K6. T1~T3. 47μF. TLN105 IN4148. 18 .. datasheet abstract.. |
269.49 Kb |
8 Pages |
|
|
|
|
First line: PRODUCT NUMBER DESCRIPTION ISSUE DATE REVISED DATA HML1010 L128 ELEMENT LINEARIMAGE SENSOR Abstract: .. 2SC1815. RS. output. SPL. Sample and hold circuit enable. -10-. HML1010. L128 ELEMENTS LINEAR IMAGE .. datasheet abstract.. |
177.92 Kb |
13 Pages |
|
|
|
|
First line: YOUDA INTEGRATED CIRCUIT YD2149 AM / FM CHIP TUNER IC--YD2149 FUNCTIONS YD2149 AM / FM chip Abstract: .. 2SC1815. DET OUT. 5V. 8V. 2SC1923. 3k. 100k 100k IF OUT. 330pF. 3.3k. SW7. 560. 470. SW8. 0.01uF. 400. OSC OUT. 47k .. datasheet abstract.. |
130.11 Kb |
7 Pages |
|
|
|
|
First line: TA2160FNG Toshiba Bipolar Integrated Circuit Silicon Monolithic TA2160FNG Consumption Current Stereo Headphone Abstract: .. 2SC1815 2SC1815. 1 μ F. V CC. 1 μ F. 4.7 μ F. BST. PW. A. PW. C PW. B. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. BST SW. RF&REF. 30. 29. 28. 27 .. 2SC1815 2SC1815. 1 μ F. V CC. 1 μ F. 4.7 μ F. BST. PW. A. PW. C PW. B. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. BST SW. RF&REF. 30. 29. 28. 27 .. datasheet abstract.. |
271.83 Kb |
17 Pages
|
|
|
|
|
First line: TA2160FN Toshiba Bipolar Integrated Circuit Silicon Monolithic TA2160FN Consumption Current Stereo Headphone Abstract: .. 2SC1815 2SC1815. 1 μ F. V CC. 1 μ F. 4.7 μ F. BST. PW. A PW. C PW. B. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. BST SW. RF&REF. 30. 29. 28. 27 .. 2SC1815 2SC1815. 1 μ F. V CC. 1 μ F. 4.7 μ F. BST. PW. A PW. C PW. B. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. BST SW. RF&REF. 30. 29. 28. 27 .. datasheet abstract.. |
277.18 Kb |
17 Pages
|
|
|
|
|
First line: Abstract: .. 2SA1015 -50 -5 -150 400 125 70-240 -6 -2 >80* 4 2SC1815. 2SA1016 -120 -5 -50 400 125. 160-960. -6 -1 110* 2.2 2SC2362. 2SA1017 -120 -5 -50 500 125. 100-560. -6 -1 110* 2.2 2SC2363. 2SA1018 -250 -5 -70 750 150 30 .. datasheet abstract.. |
86.73 Kb |
3 Pages |
|
|
|
|
First line: Abstract: .. 2SC1815 60 5 150 400 125 70-700 6 2 >80* 2 2SA1015. 2SC1816 100 6 4A 16W Tc=25oC 150 100 2 100 140* 45. 2SC1817 45 4 5A 25W Tc=25oC 150 60 2 100 250* 80. 2SC1818 130 5 7A. 100W. Tc=25oC 150 150 5 7A 7* 400. 2SC1819 .. datasheet abstract.. |
87.36 Kb |
3 Pages |
|
|
|
|
First line: TC90A67F Preliminary TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC90A67F Single Chip Abstract: .. 2SC1815. R21. R22. R23. 4.7 k Ω. 4.7 k Ω. 4.7 k Ω. B-Y B OUT. Y G OUT. R-Y R OUT. + 3.3 V V. SS. LQ18 LQ19. SDA. 1.5 k Ω .. 2SC1815 VIDEO C2. 10 μ F. R1. CKC. SW1 LQ12. LQ11. CKIN. BOUT. ROUT. YOUT. SW2 SW3 PH. REF. 0.1 μ F. C24. LQ7. VIDEO .. datasheet abstract.. |
321.08 Kb |
24 Pages |
|
|
|
|
First line: Type Modules Mobile Information Devices CCFLLCD Power dots 5.4-inch easy-to-see display Fits Abstract: .. Q1:2SC1815 OP-AMP:LP324 R1=R2=R4=R5=10kΩ,R3=13R1=130kΩ 1/17Bias C1=0.1μF,C2 to C6=3.3μF .. datasheet abstract.. |
161.05 Kb |
2 Pages |
|
|
|
|
First line: Type Modules Mobile Information Devices CCFLLCD Power dots 3.80.24mm1 / 4VGA Portrait 3.8-inch 0.24-mm Abstract: .. Q1:2SC1815 OP-AMP:LP324 R1=R2=R4=R5=10kΩ,R3=9R1=91kΩ 1/13Bias 注1 C1=0.1μF,C2 to C6=3.3μF 6 3 0.3 19 Pitch 1.0 .. datasheet abstract.. |
152.32 Kb |
2 Pages |
|
|
|
|
First line: Type Modules Mobile Information Devices CCFLLCD Power dots 3.6COG Portrait 3.6-inch compact Abstract: .. Q1:2SC1815 OP-AMP:LP324 R1=R2=R4=R5=10kΩ,R3=100kΩ 1/14Bias C1=0.1μF,C2~C6=3.3μF C3 .. datasheet abstract.. |
157.04 Kb |
2 Pages |
|
|
|
|
First line: Type Modules Mobile Information Devices CCFLLCD Power dots 3.80.24mm1 / 4VGA 3.8-inch 0.24-mm dot-pitch Abstract: .. Q1:2SC1815 OP-AMP:LP324 R1=R2=R4=R5=10kΩ,R3=9R1=91kΩ 1/13Bias 注1 C1=0.1μF,C2 to C6=3.3μF .. datasheet abstract.. |
148.07 Kb |
2 Pages |
|
|
|
|
First line: Type Modules Mobile Information Devices CCFLLCD Power dots 2.7TCP Portrait 2.7-inch compact Abstract: .. Q1:2SC1815 OP-AMP:LP324 R1=R2=R4=R5=10kΩ,R3=9R1=91kΩ 1/13Bias 注1 C1=0.1μF,C2 to C6=3.3μF .. datasheet abstract.. |
151.55 Kb |
2 Pages |
|
|
|
|
First line: Type Modules Mobile Information Devices CCFLLCD Power dots 2.7COG Portrait 2.7-inch compact Abstract: .. Q1:2SC1815 OP-AMP:LP324 R1=R2=R4=R5=10kΩ,R3=9R1=91k?Ω 1/13Bias 注1 C1=0.1μF,C2 to C6=3.3μF .. datasheet abstract.. |
157.45 Kb |
2 Pages |
|
|
|
|
First line: Type Modules Mobile Information Devices CCFLLCD Power dots 2.80.18mm 2.8-inch 0.18-mm dot-pitch Abstract: .. Q1:2SC1815 OP-AMP:LP324 R1=R2=R4=R5=10kΩ,R3=9R1=91kΩ 1/13Bias 注1 C1=0.1μF,C2 to C6=3.3μF .. datasheet abstract.. |
148.27 Kb |
2 Pages |
|
|
|
|
First line: Type Modules Mobile Information Devices CCFLLCD Power dots 2.7TCP 2.7-inch compact light Abstract: .. Q1:2SC1815 OP-AMP:LP324 R1=R2=R4=R5=10kΩ,R3=9R1=91kΩ 1/13Bias 注1 C1=0.1μF,C2 to C6=3.3μF .. datasheet abstract.. |
148.97 Kb |
2 Pages |
|
|
|
|
First line: Type Modules Mobile Information Devices CCFLLCD Power dots 2.7COG 2.7-inch compact light Abstract: .. Q1:2SC1815 OP-AMP:LP324 R1=R2=R4=R5=10kΩ,R3=9R1=91k?Ω 1/13Bias 注1 C1=0.1μF,C2 to C6=3.3μF .. datasheet abstract.. |
152.48 Kb |
2 Pages |
|
|
|
|
First line: NJM2252 SCREEN DISPLAY GENERAL DESCRIPTION NJM2252 that been developed application which super-impose Abstract: .. It can drive 75Ω line when connecting 2SC945 & 2SC1815 directly. No sag output can be performed by applying Y line sag correction at 12 pin. 12 Y Line Sag Correcting Pin Y SAGU In case when applying .. datasheet abstract.. |
184.27 Kb |
10 Pages |
|
|
|
|
First line: EVM-1702 EVALUATION MODULE FEATURES PRECISION BOARD WITH 20-BIT RESOLUTION STANDARD DIGITAL AUDIO Abstract: .. 2SC1815. CD 24. 0.1μF. 16. RD 5. 680kΩ CD. 28. 1.0μF. + CD 2. 0.1μF. RD 6. 1kΩ. U9. HC163. 13. 7. 9. 10. 2. 1. CD 25. 0.1μF. 16. 3, 4 .. QD1 2SC1815 NPN TR. LED LED RED U1 CS8412 DAC Receiver Crystal. U2 PMD100 DF, HDCD Pacific .. datasheet abstract.. |
307.83 Kb |
14 Pages |
|
|
|
|
First line: EVM-1702 EVALUATION MODULE FEATURES PRECISION BOARD WITH 20-BIT RESOLUTION STANDARD DIGITAL AUDIO Abstract: .. 2SC1815. CD 24. 0.1μF. 16. RD 5. 680kΩ CD. 28. 1.0μF. + CD 2. 0.1μF. RD 6. 1kΩ. U9. HC163. 13. 7. 9. 10. 2. 1. CD 25. 0.1μF. 16. 3, 4 .. QD1 2SC1815 NPN TR. LED LED RED U1 CS8412 DAC Receiver Crystal. U2 PMD100 DF, HDCD Pacific .. datasheet abstract.. |
327.47 Kb |
13 Pages |
|
|
|
| |
Datasheets per page: 50 | 250 | 500 |
Search Help
