500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : 2SB858C-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 1,262 Best Price : $1.67 Price Each : $1.67
Part : 2SB858C(E) Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 295 Best Price : $7.18 Price Each : $7.18
Shipping cost not included. Currency conversions are estimated. 

2SB858 Datasheet

Part Manufacturer Description PDF Type
2SB858 Hitachi Semiconductor Silicon PNP Transistor Original
2SB858 Hitachi Semiconductor Silicon PNP Triple Diffused Original
2SB858 Renesas Technology Silicon PNP Triple Diffused Original
2SB858 Renesas Technology Silicon PNP Triple Diffused Original
2SB858 Continental Device India Semiconductor Device Data Book 1996 Scan
2SB858 Continental Device India TO-220 PNP Power Package Transistors Scan
2SB858 N/A Transistor Shortform Datasheet & Cross References Scan
2SB858 N/A Shortform Transistor PDF Datasheet Scan
2SB858 N/A Japanese Transistor Cross References (2S) Scan
2SB858 N/A Cross Reference Datasheet Scan
2SB858 N/A The Transistor Manual (Japanese) 1993 Scan
2SB858 N/A Transistor Substitution Data Book 1993 Scan
2SB858 N/A The Japanese Transistor Manual 1981 Scan
2SB858 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SB858 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SB858B Renesas Technology Silicon PNP Triple Diffused Original
2SB858B Continental Device India Semiconductor Device Data Book 1996 Scan
2SB858B Continental Device India TO-220 PNP Power Package Transistors Scan
2SB858B N/A Transistor Shortform Datasheet & Cross References Scan
2SB858C Renesas Technology Silicon PNP Triple Diffused Original
Showing first 20 results.

2SB858

Catalog Datasheet MFG & Type PDF Document Tags

2sb857

Abstract: 2sb858 2SB857, 2SB858 Silicon PNP Triple Diffused HITACHI Application Low frequency power , 150 -4 5 to +150 2SB858 -7 0 -6 0 -5 -4 -8 40 150 - 45 to +150 Unit V V V A A W °C °C 2SB857,2SB858 Electrical Characteristics Item Collector to base breakdown voltage Collector to emitter , = 2 5 °C ) 2SB857 Symbol ^(BR)CBO 2SB858 Max - - - -1 Min -7 0 -5 0 -5 Typ - , . The 2SB857 and 2SB858 are grouped by hF E 1 as follows. 2. B 60 to 120 C Pulse test D 100 to 200 160
-
OCR Scan
2SD1133 2SD1134 D-85622

2SB857

Abstract: 2SB858 Inchange Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power Transistors , voltage Collector-emitter voltage SEM E ANG CH Open base 2SB858 VEBO IN Open , Specification 2SB857 2SB858 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise , MIN TYP. MAX UNIT -50 IC=-50mA; RBE= 2SB858 V -60 V(BR)CBO Collector-base , 15 MHz Inchange Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power
-
Original
2SD1133/1134

2SB857

Abstract: 2SB858 2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier , . Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 , Tstg ­45 to +150 ­45 to +150 °C Note: 1. Value at T C = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ , transfer ratio hFE1* Collector to emitter saturation voltage 1 Notes: 1. The 2SB857 and 2SB858
Hitachi Semiconductor
Original
Hitachi DSA00333

Hitachi DSA001650

Abstract: 2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier , . Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 , Tstg ­45 to +150 ­45 to +150 °C Note: 1. Value at TC = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ , Collector to emitter saturation voltage hFE1* 1 2 2 2 Notes: 1. The 2SB857 and 2SB858 are
Hitachi
Original
Hitachi DSA001650

2SB857

Abstract: 2SB858 JMnic Product Specification 2SB857 2SB858 Silicon PNP Power Transistors DESCRIPTION , -50 Open base 2SB858 VEBO VALUE V -60 Open collector -5 V IC Collector , =25 JMnic Product Specification 2SB857 2SB858 Silicon PNP Power Transistors CHARACTERISTICS Tj , breakdown voltage MIN TYP. MAX UNIT -50 IC=-50mA; RBE= 2SB858 V -60 V(BR)CBO , Specification 2SB857 2SB858 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions
JMnic
Original
Abstract: 2SB857,2SB858 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier , 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 Unit , Tstg â'" to +150 45 - 4 5 to +150 °C Note: 1. Value at T c = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta 25 °C) = 2SB857 Item 2SB858 Symbol Base to em itter voltage , = ^ V , E lc = -0 .5 A*2 VB E Gain bandwidth product fT Notes: 1. The 2SB857 and 2SB858 -
OCR Scan

2sb857

Abstract: 2SB857,2SB858 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier , VE B 0 lc lC (p e a k ) Pc*1 Tj Tstg 2SB857 -7 0 -5 0 -5 2SB858 -7 0 -6 0 -5 Unit V V V A A W °C °C -A -8 40 150 - 4 5 to +150 -A -8 40 150 - 4 5 to +150 2SB857, 2SB858 , ratio 2SB858 Max - Symbol ^(B R )C B O Min -7 0 Typ - Min -7 0 Typ - Max , : 1. The 2SB857 and 2SB858 are grouped by hF E 1 as follows. 2. Pulse test B 60 to 120 C D
-
OCR Scan

Hitachi DSA002787

Abstract: 2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier , (peak) PC * Tj Tstg 1 2SB857 ­70 ­50 ­5 ­4 ­8 40 150 ­45 to +150 2SB858 ­70 ­60 ­5 ­4 ­8 40 150 ­45 to +150 Unit V V V A A W °C °C 2SB857, 2SB858 Electrical Characteristics (Ta = 25 , breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SB858 Max - - - , 2SB858 are grouped by h FE1 as follows. 2. Pulse test B 60 to 120 C 100 to 200 D 160 to 320 Maximum
Hitachi
Original
Hitachi DSA002787

2SB858

Abstract: 2SB857 2SB857, 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st. Edition Sep. 2000 , °C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base voltage VCBO ­70 ­70 , : 1. Value at TC = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 , voltage 1 Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B C , power dissipation Pc (W) 60 2SB857 2SB858 ­2 ­5 ­10 ­20 ­50 ­100 Collector to emitter Voltage
Hitachi Semiconductor
Original
DSA003644

2SB557 TOSHIBA

Abstract: 2SB1314 2SB 595 St 2 2SB633 2SA1069 2SB858 2SB1293 2SB 596 S S 2SB507 2SB703 2SB858 2SB942 2SA1634 , 2SB858 2SA1634
-
OCR Scan
2SB596 2SA496 2SA683 2SA934 2SB861 2SB1186A 2SB557 TOSHIBA 2SB1314 toshiba 2sb554 2sa483 2SB546A 2SB544 2SB562 2SB1035

2sb857

Abstract: 2SB858 SavantIC Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power Transistors , UNIT -70 V -50 Open base 2SB858 VEBO VALUE V -60 Open collector -5 V , ~150 TC=25 SavantIC Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power , =-50mA; RBE=; V -60 2SB858 V(BR)CBO Collector-base breakdown voltage IC=-10µA; IE=0 -70 , 2SB858 SavantIC Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power
-
Original
2sb858 datasheet

transistor 2SB857

Abstract: 2SB857 products contained therein. 2SB857, 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st , Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base , °C Note: 1. Value at TC = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ Max Unit Test conditions , saturation voltage 1 Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B
Renesas Technology
Original
transistor 2SB857

2SD1134

Abstract: 2SB857 products contained therein. 2SB857, 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st , Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base , °C Note: 1. Value at TC = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ Max Unit Test conditions , saturation voltage 1 Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B
Renesas Technology
Original

2SB857

Abstract: 2SB858 HITACHI 2SB857, 2SB858 SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1133 AND 2SD1134 17 I 1 rO.I 153im ' -0.08 1. He« 2. Cotkiw (Flange) 3 , CHARACTERISTICS (Ta=25aC) Jiem Symlwjl Test Condition 2SB857 2SB858 Unii min, typ. max. min. ' typ , 2SB857 and 2SB858 are grouped by h rei as follows. * Pulse Test _ B C D 60 to 120 100 10 200 160 io 320 HITACHI 2SB857, 2SB858 C'ollcckw io l'initier voltige V(r: (Vj COLLECTOR TO
-
OCR Scan
25B857 2SI3B58

2SB858

Abstract: 2SD1134 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB858 DESCRIPTION ·Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -2A ·High Collector Power Dissipation ·Complement to Type 2SD1134 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE , isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB858
INCHANGE Semiconductor
Original
Abstract: products contained therein. 2SB857, 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st. Edition , ­5 ­4 ­8 40 150 ­45 to +150 2SB858 ­70 ­60 ­5 ­4 ­8 40 150 ­45 to +150 Unit V V V A A W °C °C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 Item Collector to base breakdown voltage , (BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SB858 Max - - - ­1 320 - ­1 ­1 - Min ­70 ­60 ­5 - 60 35 , bandwidth product f T Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B 60 Renesas Electronics
Original

2SA748

Abstract: 2SB927 2: 2SA659 2SA1015 2SA733 2SA844 2SA933 2SA 768 â'" â y-virv 2SB596 2SB858 2SB942 2SB1334 2SA 769 - â Ã¶-virv 2SB596 2SB858 2SB942 2SA1634 2SA 770 2SB553 2SB566AOO 2SB942 2SB1289
-
OCR Scan
2SB548 2SA715 2SB1043 2SA985 2SA748 2SB1064 2SB927 2SA757B 2sa763 2SA1705 2SA684 2SB817

2SB858

Abstract: HITACHI 2SB857, 2SB858 S IL IC O N P N P T R I P L E D IF F U S E D L O W F R E Q U E N C Y P O W E R A M P L IF IE R C O M P L E M E N T A R Y P A IR W IT H 2SD 1133 A N D 2 S D 1 134 !- Be« C o lle e n * 2 tí'Usyt i } I-m a te r i,D in ) c íís U )n » i n l i m i) ( J E O E C TO -2 20A B) A B S O L U T E M A X IM U M R A T IN G S Item Collector to base voltage Collector lo , . I) lot 120 | ' 60 to 120 j I < X) to 200 I HITACHI 2SB857, 2SB858 A R E A O F S A F E
-
OCR Scan
2S15XSS 2SBS57 2SB85S

2SB857

Abstract: 2SB858 products contained therein. 2SB857, 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st , Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base , °C Note: 1. Value at TC = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ Max Unit Test conditions , saturation voltage 1 Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B
Renesas Electronics
Original

2SA1015

Abstract: 2sa798 2SA1425 2SB549 2SB858 2SA 794A të T 2SB631K 2SA1425 2SA 795 fâ T 2SB858 2SA1111 2SA
-
OCR Scan
2SB631 2SA1339 2SA1016 2SA675 2SA836 2SA1309A 2sa798 2SA1207 2sb631 hitachi 2SA785 2SA743 2SA699A
Showing first 20 results.