500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : 2SB776D Supplier : SANYO Electric Manufacturer : Rochester Electronics Stock : 103 Best Price : - Price Each : -
Shipping cost not included. Currency conversions are estimated. 

2SB776 Datasheet

Part Manufacturer Description PDF Type
2SB776 Sanyo Semiconductor Silicon Transistor, 100V/7A, AF 40W Output Applications Original
2SB776 Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor Original
2SB776 Unisonic Technologies MEDIUM POWER LOW VOLTAGE TRANSISTOR Original
2SB776 N/A Transistor Shortform Datasheet & Cross References Scan
2SB776 N/A Shortform Transistor PDF Datasheet Scan
2SB776 N/A Japanese Transistor Cross References (2S) Scan
2SB776 N/A Cross Reference Datasheet Scan
2SB776 N/A The Transistor Manual (Japanese) 1993 Scan
2SB776 N/A Transistor Substitution Data Book 1993 Scan
2SB776 N/A The Japanese Transistor Manual 1981 Scan
2SB776 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SB776 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SB776 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan
2SB776 Sanyo Semiconductor Large Signal Transistors (for high frequency, high Voltage and general purpose use) Scan
2SB776 Sanyo Semiconductor Planar Silicon Transistor 100V 7A Scan
2SB776 Sanyo Semiconductor Transistors / Switching Transistors Scan
2SB776D N/A Transistor Shortform Datasheet & Cross References Scan
2SB776E N/A Transistor Shortform Datasheet & Cross References Scan

2SB776

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Ordering number:ENN678F 2SB776 : PNP Epitaxial Planar Silicon Transistor 2SD896 : NPN Triple Diffused Planar Silicon Transistor 2SB776/2SD896 100V/7A, AF 40W Output Applications Features , dependence of fT on current and excellent high frequency responce. unit:mm 2022A [2SB776/2SD896] 15.6 , are for the 2SB776 only ; other descriptions than those in parentheses are common to the 2SB776 and , 200* 15 VCE=(­)5V, IC=(­)1A * : The 2SB776/2SD896 are classified by 1A hFE as follows : mA SANYO Electric
Original
2SB776/2SD896
Abstract: saturation voltage * Complement to 2SD886 *Pb-free plating product number: 2SB776L ORDERING INFORMATION Ordering Number Normal Lead Free Plating 2SB776-x-T60-K 2SB776L-x-T60-K 2SB776-x-TN3-R 2SB776L-x-TN3-R 2SB776-x-TN3-T 2SB776L-x-TN3-T www.unisonic.com.tw Copyright © 2007 Unisonic , UNISONIC TECHNOLOGIES CO., LTD 2SB776 PNP PLANAR TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB776 is a medium power low voltage transistor, designed for audio power Unisonic Technologies
Original
A150D XT60 2SB776- 2SB776L- QW-R204-003
Abstract: Ordering number: EN678F 2SB776/2SD896 2SB776 : PNP Epitaxial Planar Silicon Transistor 2SD896 , and excellent high frequency responce. The descriptions in parentheses are for the 2SB776 only , tstg & : The 2SB776/2SD896 are classified by 1A hFE as follows. typ 60* 20 15 (200)140 (-0.9) 0.6 , Chome, Ueno, Taito-ku,TOKYO, 110 JAPAN 90595MO (KOTO)/4017KI/1115MW, TS 8-3416/7039 No.678-1/4 2SB776 , Collecter-to-Emitter Voltage,VCE - V lc - vBE 2SB776 -U V / / J t -
OCR Scan
transistor D896 B776 transistor D896 SD896 B776 transistor sd896
Abstract: °C Device Marking 2SB776=B776 , 2SD886=D886 ELECTORICAL CHARACTERISTICS Symbol Min Max , 2SB776 2SD886 2SB776 PNP Epitaxial Planar Transistors 2SD886 NPN Epitaxial Planar Transistors , RATINGS (Ta=25°C) Rating Symbol PNP/2SB776 NPN/2SD886 Unit Collector-Emitter Voltage , -Apr-08 2SB776 2SD886 ELECTRICAL CHARACTERISTICS (TA=25˚C unless otherwise noted) (Countinued , =10V, f=1MHz) * Pulse Test WEITRON http://www.weitron.com.tw 2/5 14-Apr-08 2SB776 2SD886 Weitron
Original
PNP/2SB776 290TYP
Abstract: Ordering number:678F 2SB776 : PNP Epitaxial Planar Silicon Transistor 2SD896 : NPN Triple Diffused Planar Silicon Transistor 2SB776/2SD896 100V/7A, AF 40W Output Applications Features , dependence of fT on current and excellent high frequency responce. unit:mm 2022A [2SB776/2SD896] The descriptions in parentheses are for the 2SB776 only ; other descriptions than those in parentheses are common to the 2SB776 and 2SD896. 1 : Base 2 : Collector 3 ; Emitter Specifications SANYO : TO SANYO Electric
Original
transistor 7089 1a60d
Abstract: JMnic Product Specification 2SB776 Silicon PNP Power Transistors DESCRIPTION With TO-3PN package Complement to type 2SD896 Wide area of safe operation APPLICATIONS 100V/7A, AF 40W output , Storage temperature -55~150 TC=25 JMnic Product Specification 2SB776 Silicon PNP , -1 Classifications D E 60-120 100-200 2 JMnic Product Specification 2SB776 Silicon PNP , 2SB776 Silicon PNP Power Transistors 4 JMnic JMnic
Original
Abstract: UTC 2SB776 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB776 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES 1 *High current output up to 3A *Low saturation voltage , -2.0 CO. LTD V V MHz pF 1 QW-R204-003,A UTC 2SB776 PNP EPITAXIAL SILICON , UTC 2SB776 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures Unisonic Technologies
Original
Abstract: Ordering number:ENN678F 2SB776 : PNP Epitaxial Planar Silicon Transistor 2SD896 : NPN Triple Diffused Planar Silicon Transistor 2SB776/2SD896 100V/7A, AF 40W Output Applications Features , dependence of fT on current and excellent high frequency responce. unit:mm 2022A [2SB776/2SD896] 15.6 , are for the 2SB776 only ; other descriptions than those in parentheses are common to the 2SB776 and , * 20 15 VCE=(­)5V, IC=(­)1A * : The 2SB776/2SD896 are classified by 1A hFE as follows : MHz SANYO Electric
Original
IC TA 7089
Abstract: Saturation Voltage * Complement to 2SD886 ORDERING INFORMATION Normal 2SB776-x-T60-K 2SB776-x-TN3-R Ordering Number Lead Free Plating 2SB776L-x-T60-K 2SB776L-x-TN3-R Halogen Free 2SB776G-x-T60-K 2SB776G-x-TN3-R www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Package TO , UNISONIC TECHNOLOGIES CO., LTD 2SB776 PNP PLANAR TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB776 is a medium power low voltage transistor, designed for audio power Unisonic Technologies
Original
2SB776G-
Abstract: Inchange Semiconductor Product Specification 2SB776 Silicon PNP Power Transistors DESCRIPTION With TO-3PN package Complement to type 2SD896 Wide area of safe operation APPLICATIONS 100V , temperature -55~150 TC=25 Inchange Semiconductor Product Specification 2SB776 Silicon , Specification 2SB776 Silicon PNP Power Transistors PACKAGE OUTLINE OND IC TOR UC , Specification 2SB776 Silicon PNP Power Transistors OND IC TOR UC SEM GE HAN -
Original
Abstract: Ordering number: EN678F i J SANYO F No.678F 2SB776/2SD896 2SB776: PNP Epitaxial Planar , the 2SB776 only ; other descriptions than those in parentheses are common to the 2SB 776 and 2SD896 , Time tstg n (1.2)6.0 us X : The 2SB776/2SD896 are classified by 1A hFE as follows. Package ,   2SB776/2SD896 lc - VCE < " I A b 9 O « 3 s 3 I TJ 10 A, JB a 1.0 1000 7 5 3 2 â C a , 2SB776 VCE -ov / / / ( / / / 0 -0.2 -oa -
OCR Scan
5d89 TJ10A
Abstract: SavantIC Semiconductor Product Specification 2SB776 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SD896 ·Wide area of safe operation APPLICATIONS , Product Specification 2SB776 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless , PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SB776 SavantIC Semiconductor Product Specification 2SB776 Silicon PNP Power Transistors 4 - -
Original
Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB776 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD896 APPLICATIONS ·Designed for 40W audio frequency output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER scs .i w w w , 2SB776 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO INCHANGE Semiconductor
Original
Abstract: UTC 2SB776 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB776 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES 1 *High current output up to 3A *Low saturation voltage *Complement to 2SD886 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta , -2.0 CO. LTD V V MHz pF 1 QW-R204-003,A UTC 2SB776 PNP EPITAXIAL SILICON Unisonic Technologies
Original
Abstract: - 64 - S â'¬ Type No. tt « Manuf. H % SANYO M S TOSHIBA 0 « NEC S iL HITACHI * ± a FUJITSU fé T MATSUSHITA = m MITSUBISHI â¡ â'" A ROHM 2S6 114« fé T 2SB1267 2SB 1149' 0 * 2SB937A 2 SB 1151 , B « 2SB1165 2SB933 2 SB 1152 fé T 2SB817 2SB863 2SA1227A 2SB 1153 fé T 2SA1302 2SB 1155' fâ T 2SB1371 2SB 1156 ' fé T 2SBÃ372 2SB 1157 fé T 2SB776 2SB1351 2SB 1158 fé T 2SB776 2SB1371 2S8 1159 fé T 2SB816 2SB 1160 J fé T -
OCR Scan
2SB1201 2SA1241 2SB1407 2SA1302 TOSHIBA Toshiba 2Sa1302 SB 1156 mitsubishi 1183 2SB1361 2SB1373 2SB1347 SB1317 2SB892 2SA1020
Abstract: 2SA1592 2SA1225 2SB768 2SB 846 B iL 2SA1241 2SB1182 2SB 848 B m 2SB776 2S8 849 B m 2SB776 2SB 850 *±W* 2SB826 2SB707 2SB 850A *±S» 2SB826 2SB708 2SB 851 o-A -
OCR Scan
2SB1155 2SB927 2SA1298 2SB694 2SB1202 2SA1243 Toshiba 2SB754 2SB837B 2Sb754 2SB754 2SA1185 2SB849 2SA1789
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB776 TRANSISTOR (PNP) TO-126 FEATURES High current output up to 3A Low saturation voltage Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted ) Symbol Parameter 3. BASE Value Units VCBO Collector-Base Voltage -50 VCEO Collector-Emitter , =1MHz 45 pF Typical Characteristics 2SB776 Jiangsu Changjiang Electronics Technology Jiangsu Changjiang Electronics Technology
Original
Abstract: 2SB1371 2SB 1056 , fé T 2SB776 2SA1146 2SB1372 2SB 1057 - fé T 2SB816 ZSA1146 2SB1361 2SB -
OCR Scan
2SB764 2SB605 2SA683 2SB793 2SA1173 2SA1384 2SB1200 2SB507 2SB1043 2SA1Q20 2SA1705
Abstract: 2SB776(PNP) TO-126 Transistor 1. EMITTER 2. COLLECTOR 3. BASE 7.400 7.800 TO-126 2.500 1.100 2.900 1.500 3.900 4.100 0.000 0.300 3.000 3.200 10.60 0 11.00 0 3 2 Features 1 2.100 2.300 1.170 1.370 15.30 0 15.70 0 High current output up to 3A Low saturation voltage Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted ) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter , =1MHz 2SB776(PNP) TO-126 Transistor Typical Characteristics - -
Original
Abstract: 2SB1H2 2SBU02 2SB1415 2SB1314 2SB1065 2SB 773 b m. 2SB776 2SB 773A 0 m 2SB776 2SB1054 -
OCR Scan
2SB824 2SB596 2SB703 2SB595 2SB703A 2SB686 2SB773A 2sb773 2SB965 2SB859 2SB942 2SB1334
Abstract: -0.002 -0.5 -0.1 -0.01 2SB775 LF PA -100 -85 -6 60 -100 -40 60 200 -5 -1 -2 -4 -0.4 2SB776 LF PA , * 2SD896 (T0-3PB) BCE 2SB776 1 1 2 2SD907 SC-65 BCE (fíjc) 2SB777 150* -10 -0.05 15 -
OCR Scan
2SB751A 2SB753 2SB757 2SB761 2SB761A 2SB762 2SD889 KT 185 2SB772 2sb788 2sb774 2SB772 R
Showing first 20 results.