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Part : 2SB561CTZ-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 14,300 Best Price : $0.16 Price Each : $0.20
Part : 2SB561B Supplier : - Manufacturer : basicEparts Stock : 1,210 Best Price : - Price Each : -
Part : 2SB561C Supplier : - Manufacturer : basicEparts Stock : 5,000 Best Price : - Price Each : -
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2SB561 Datasheet

Part Manufacturer Description PDF Type
2SB561 Hitachi Semiconductor Silicon PNP Epitaxial Original
2SB561 Renesas Technology Silicon PNP Epitaxial Transistor Original
2SB561 Renesas Technology Silicon PNP Epitaxial Original
2SB561 Various Russian Datasheets Transistor Original
2SB561 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan
2SB561 N/A The Transistor Manual (Japanese) 1993 Scan
2SB561 N/A Transistor Substitution Data Book 1993 Scan
2SB561 N/A The Japanese Transistor Manual 1981 Scan
2SB561 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SB561 N/A Scan
2SB561 N/A Shortform Transistor Datasheet Guide Scan
2SB561 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SB561 N/A Basic Transistor and Cross Reference Specification Scan
2SB561 N/A Transistor Shortform Datasheet & Cross References Scan
2SB561 N/A Japanese Transistor Cross References (2S) Scan
2SB561 N/A Cross Reference Datasheet Scan
2SB561 N/A Shortform Transistor PDF Datasheet Scan
2SB561B Hitachi Semiconductor Silicon PNP Epitaxial Transistor Original
2SB561B Renesas Technology Silicon PNP Epitaxial Transistor Original
2SB561BTZ-E Renesas Technology Silicon PNP Epitaxial Original
Showing first 20 results.

2SB561

Catalog Datasheet MFG & Type PDF Document Tags

2SA985 NEC

Abstract: 2s8834 * » * * * * * * ♦ * * ♦ * t * * * * * * * * ♦ * * S â'¬ Type No. tt « Manuf. = ft SANYO X S TOSHIBA B m NEC B îl HITACHI * ± a FUJITSU K T MATSUSHITA H S MITSUBISHI â¡ â'" A ROHM 2SB 153 0 îl 2SB561 2SB 154 S îl 2SB561 2SB 155 h îl 2SB561 2SB 176 ' fâ T 2SB56 2SB 302 0 îl 2SA836 2SB 370 a îl 2SB562 2SB 370A 0 îl 2SB562 2SB , îl 2SB561 2SB 502 ^ 3E "s. 2SB508 2SB834 2SB566AO!) 2SB 503 â'¢ 2SB508 2SB834
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OCR Scan
2SB507 2SA985 2SB1369 2SB596 2SB941 2SB1314 2SA985 NEC 2s8834 toshiba 2sb555 2SB537 ZSB834 2SB566 ZSB566

2sb561

Abstract: Hitachi DSA002754 2SB561 Silicon PNP Epitaxial Application · Low frequency power amplifier · Complementary pair with 2SD467 Outline 2SB561 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector , , IC = ­0.15 A VCE = ­1 V, IC = ­0.15 A VCB = ­10 V, IE = 0 f = 1 MHz 1. The 2SB561 is grouped by hFE as follows. C 120 to 240 2 2SB561 3 2SB561 4 2SB561 When using this
Hitachi
Original
Hitachi DSA002754

2sb561

Abstract: 2SB561 Silicon PNP Epitaxial HITACHI Application · · Low frequency power am plifier , 2SB561 Absolute Maximum Ratings (Ta = Item Collector to base voltage Collector to emitter voltage , 5 A V c8 = V be fT - - - ~ Cob f 1. The 2SB561 is grouped by hF E as follows. C 120 to 240 = -1 0 V , |E= 0 1 MHz 196 HITACHI 2SB561 Maximum Collector Dissipation , ) Collector Current lc (mA) HITACHI 19 7 2SB561 Collector to Emitter Saturation Voltage vs
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OCR Scan

2SB561

Abstract: Hitachi DSA00398 2SB561 Silicon PNP Epitaxial Application · Low frequency power amplifier · Complementary pair with 2SD467 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SB561 Absolute , VCB = ­10 V, IE = 0 f = 1 MHz Note: 1. The 2SB561 is grouped by hFE as follows. B C 85 to 170 120 to 240 2 VCE = ­1 V, I C = ­0.15 A (Pulse test) 2SB561 Maximum Collector , 10 ­1 ­3 ­10 ­30 ­100 ­300 Collector Current IC (mA) ­1,000 3 2SB561 IC = 10
Hitachi Semiconductor
Original
Hitachi DSA00398 D-85622

2SB561

Abstract: Hitachi DSA0076 2SB561 Silicon PNP Epitaxial ADE-208-1023 (Z) 1st. Edition Mar. 2001 Application · Low , . Collector 3. Base 3 2 1 2SB561 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings , . The 2SB561 is grouped by hFE as follows. B C 85 to 170 120 to 240 2 VCE = ­1 V, I C = ­0.15 A (Pulse test) 2SB561 Maximum Collector Dissipation Curve Typical Output , ­30 ­100 ­300 Collector Current IC (mA) ­1,000 3 2SB561 IC = 10 IB ­0.3 ­0.2
Hitachi Semiconductor
Original
Hitachi DSA0076

2SB56I

Abstract: HITACHI 2SB561 SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD467 £ % 1. Emitter 2. Collector 3. B&s« (Dimenswxts. in mm) (JEDEC TO-92) ABSOLUTE MAXIMUM RATINGS (T a = 2 5 X ) Item C o llecto r to b ase v o ltaee C o tIccto r to e m itte r v oltage E m itte r to b ase v o ltag e C o llecto r cu rren t C o lle cto r p eak c u rren t -tC o lle cto r p o w er , e » sal) V as fT V V M Hz pF - Co, ft 85 to i 70 HITACHI 2SB561 TYPICAL
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OCR Scan
2SB56I

2SB561

Abstract: 2SD467 products contained therein. 2SB561 Silicon PNP Epitaxial ADE-208-1023 (Z) 1st. Edition Mar. 2001 , . Emitter 2. Collector 3. Base 3 2 1 2SB561 Absolute Maximum Ratings (Ta = 25°C) Item Symbol , . The 2SB561 is grouped by hFE as follows. B C 85 to 170 120 to 240 2 VCE = ­1 V, I C = ­0.15 A (Pulse test) 2SB561 Maximum Collector Dissipation Curve Typical Output , ­30 ­100 ­300 Collector Current IC (mA) ­1,000 3 2SB561 IC = 10 IB ­0.3 ­0.2
Hitachi Semiconductor
Original

2SB561

Abstract: 2SB56J HITACHI 2SB561 SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD467 1. Emiiicr 1, Collccior Ì. Base (Dimensions in mm) (JEDEC TO-92) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Item Symbol 2SB561 Unit Collector io base voltage Veno -25 V Collector to emitter voltage Vceo -20 V Emitter to base voltage Vebo -5 V Collector current Ic -0.7 A Collector peak currcnt iCtpcak) -1.0 A Collector power dissipation PC 0.5 W Junction temperature Tj 150 °C Storage temperature Tsig -55 to
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OCR Scan
2SB56J

2SB561

Abstract: PRSS0003DA-A Max 1.27 2.54 Ordering Information Part Name 2SB561BTZ-E 2SB561CTZ-E Quantity 2500 , 2SB561 Silicon PNP Epitaxial REJ03G0645-0200 (Previous ADE-208-1023) Rev.2.00 Aug , +150 °C °C 2SB561 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown , MHz pF Note: 1. The 2SB561 is grouped by hFE as follows. B C 85 to 170 120 to 240 Rev , ­1 V, IC = ­0.15 A VCE = ­1 V, IC = ­0.15 A VCB = ­10 V, IE = 0 f = 1 MHz 2SB561 Main
Renesas Technology
Original
PRSS0003DA-A SC-43A

2SB561

Abstract: 2SB561C 2SB561 -0.7A , -25V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES TO-92 Low Frequency Power Amplifier G H Emitter Collector Base J A CLASSIFICATION OF hFE D REF. Product-Rank 2SB561-B Range 85~170 B 2SB561-C 120~240 A B C D E F G H J K K E C F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51
SeCoS
Original
transistor 2sb561

2SB737

Abstract: 2SA1015 984 = % 2SA817 2SA953 2SB561 2SA720 2SA1399 2SA854 2SA 984K H # 2SA1306 2SA 985 â'ž. 0 a , 997 «±a 2SB598 2SA966 2SA952 2SB561 2SB621 2SA1515 2SA 998 «dta 2SB764 2SB605 2SB561 2SB621A
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OCR Scan
2SA1015 2SA988 2SA1127 2SA933 2SA1142 2SB648 2SB737 2SA978 2SA933 R 2SA1030 2SA1209

2SB561

Abstract: 2SB561BTZ-E Max 1.27 2.54 Ordering Information Part Name 2SB561BTZ-E 2SB561CTZ-E Quantity 2500 , . 2SB561 Silicon PNP Epitaxial REJ03G0645-0200 (Previous ADE-208-1023) Rev.2.00 Aug , +150 °C °C 2SB561 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown , MHz pF Note: 1. The 2SB561 is grouped by hFE as follows. B C 85 to 170 120 to 240 Rev , ­1 V, IC = ­0.15 A VCE = ­1 V, IC = ­0.15 A VCB = ­10 V, IE = 0 f = 1 MHz 2SB561 Main
Renesas Technology
Original

2sa850

Abstract: 2sa1047 2SA1359 2SA1020 2SB744 2SB546A 2SB546A 2SB861 2SB861 2SA715 2SB649 2SA715 2SB561 2SB647 2SB647 2SA719 , 2SA916 2SA952 2SB561 2SA1016 2SA817 2SA1Û15 2SA966 2SA965 2SA950 2SA733 2SA953 2SA673AOO 2SB718 2SB861
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OCR Scan
2SA930 2SA872 2SA999L 2SB564A 2SA968 2SA992 2sa850 2sa1047 2sa9630 2SA931 2SA932 2SA929 2SA112Y

A933

Abstract: SA1015 2SA 869 STBÃ" 2SA984 2SA953 2SB561 2SA683 2SA854 2SA 870 2SA984 2SA953 2SB561 2SA684 2SA 871
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OCR Scan
2SA987 2SA562TM SA112 SA1015 2SA564 2SA1371 A933 2sa864 A933 S 2SA1390 2SA970 2SA1039

2SB504

Abstract: 2SB506A -0.05 2SB561 B3: LF PA -25 -20 -0. 7 0.5 -1 -20 85 240 -1 -0. 15 -0.5 -0.5 -0.05 2SB562 B iL LF PA , -0.15 20* 2SD467 TO-92B ECB 2SB561 350* -2 -0.5 38* 2SD468 (TO-92MOD) ECB 2SB562 110* -6
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OCR Scan
2SB434G 2SB435G 2SB502A 2SB503A 2SB504 2SB504A 2SB506A 2SD325 2SB511 2SB536 2sb560
Abstract: Part Name 2SB561BTZ-E 2SB561CTZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping , developed or manufactured by or for Renesas Electronics. 2SB561 Silicon PNP Epitaxial REJ03G0645 , '"0.7 â'"1.0 0.5 150 â'"55 to +150 Unit V V V A A W ° C ° C 2SB561 Electrical , pF Note: 1. The 2SB561 is grouped by hFE as follows. B C 85 to 170 120 to 240 Rev , 2SB561 Main Characteristics Typical Output Characteristics 0.6 â'"500 Collector current IC Renesas Technology
Original

2s8698

Abstract: 2SA634A 2SA1039 2SA 642 - 0 n 2SA562TM 2SB561 2SA854 2SA 643 - a a 2SB698 2SA950 2SB562 ZSA854 2SA 644
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OCR Scan
2SA699 2SA699A 2SB1187 2SA844 2SB849 2SB686 2s8698 2SA634A 2sB1064 2SB632 2SB1064 2SA473 2SB631

2SB83

Abstract: 2SB561 Pulse Test (¡rade » C Mark BB BC KM; 85 to 170 120 to 240 â  See characteristic curves of 2SB561.
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OCR Scan
2SB831 2SD1101 2SB83

761b nec

Abstract: 2SB1010 2SA950 2SA952 2SB561 2SA719 2SA854 2SB 747 fé t 2SB920 2SB595 2SB703 2SB859 2SB979 2SB1293 2SB
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OCR Scan
2SB927 2SB1010 2SB1043 2SA1031 2SA937 2SB921 761b nec 2sb1041 761a 2sa684 nec 2SB739 2SA1705 2SB740 2SB1035
Abstract: 1 ] 21) lo 2 I See characteristic curves ot 2SB561. -
OCR Scan

2SD467

Abstract: 2SD467 Silicon NPN Epitaxial HITACHI Application · · L ow frequency pow er am plifier C om plem entary pair w ith 2SB561 Outline TO-92 (1) 3 I I 1. Emitter 2. Collector 3. Base 2 1 8ó9 2SD467 Absolute Maximum Ratings (Ta = 2 5 °C ) Item Collector to base voltage Collector to em itter voltage Emitter to base voltage Collector current Collector peak current Collector pow er dissipation Junction tem perature Storage tem perature Symbol Ratings 25 20 5 0.7 1.0 0.5
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OCR Scan
Showing first 20 results.