NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SB1370 | N/A | Transistor Substitution Data Book 1993 |
1 pages, |
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| 2SB1370 | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
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| 2SB1370 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
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| 2SB1370 | N/A | The Transistor Manual (Japanese) 1993 |
2 pages, |
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| 2SB1370 | ROHM Electronics | Power Transistor |
1 pages, |
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| 2SB1370 | ROHM Electronics | 60V, 3A power transistor |
1 pages, |
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| 2SB1370 | ROHM Electronics | TO-220, TO-220FP, TO-220FN, HRT Transistors |
2 pages, |
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| 2SB1370 | Various Russian Datasheets | Transistor |
8 pages, |
Original | |
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| 2SB1370 | N/A | Japanese Transistor Cross References (2S) |
1 pages, |
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| 2SB1370E | ROHM Electronics | Power Transistor 60V 3A |
1 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SavantIC Semiconductor Product Specification 2SB1370 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·PC=2W(Ta=25 ) /30W(TC=25 ) ·Low collector saturation voltage ·Wide area of safe operation · PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 , Semiconductor Product Specification 2SB1370 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 , dimensions (unindicated tolerance: ±0.15 mm) 3 2SB1370 ... | Original |
3 pages, |
2SB1370 2SB1370 abstract |
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| Abstract: Transistors 2SB1370 2SB1655 2SB1655 / 2SB1565 2SB1565 (94L-411-B303 94L-411-B303) (94L-456-B349 94L-456-B349) 319 ... | Original |
1 pages, |
2SB1655 2SB1565 2SB1370 94L-411-B303 94L-456-B349 2SB1370 abstract |
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| Abstract: Transistors 2SB1370 I Power Transistor ( 2SB1370 1) LowVccm. (Typ. -0.3V at lot-2/-0.2A) 2 ) Excellent DC currant gain characteristics 3) Pc - 2Wrra=25X:)/30W(Tc-25'C) 4 } Wide SOA (safe operating area). Type 2S81370 2S81370 Package T0220FN T0220FN rvc EF Code - Bue ordering uM (pecM ) I 500 60V, -3A) •Absolute maximum ratings (Ta-25"C) Syrnöot Umes Coâecior-tiase vonage V« -60 V CoAedor-ernMer voltage I Vco -eo V Emeter-bate voltage V» -5 V Co«ec*or current lc -3 A(DC) -Ä 2 W pewer ... | OCR Scan |
1 pages, |
2S81370 2SB1370 T0220FN 2SB1370 abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F 2SB1370 Plastic-Encapsulate Transistors TO-220F TRANSISTOR (PNP) FEATURES Breakdown Voltage High Reverse Cut-off Current Small Saturation Voltage Low Collector Power dissipation PCM : 2 W (Tamb=25) 30 W (Tcase=25) 1. BASE 2. COLLECTOR 3. EMITTE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value , Typical Characteristics 2SB1370 ... | Original |
2 pages, |
2SB1370 2SB1370 abstract |
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| Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1370 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -0.3V(Typ.)@IC= -2A ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO , INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1370 ELECTRICAL CHARACTERISTICS TC=25 ... | Original |
2 pages, |
2sb1370 2SB1370 2SB1370 abstract |
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| Abstract: 1366 - 2SB1133 2SB1133 2SB1015 2SB1015 2SA1394 2SA1394 2SB941 2SB941 2SB1370 2SB 1367 _ »HS? 2SB1454 2SB1454 2SB1016 2SB1016 2SA1650 2SA1650 2SB1317 2SB1317 , 2SB 1375 S 2 2SB1133 2SB1133 2SB1094 2SB1094 2SB1392 2SB1392 2SB1393 2SB1393 2SB1370 2SB 1376 fé T 2SA1783 2SA1783 2SA1398 2SA1398 2 SA1561 SA1561 ... | OCR Scan |
1 pages, |
2SA1824 2SA1825 2SA1855 2SB1017 2SB1133 2SA1220 2SB1192 2SB1217 2SB1370 2SB953 2SB942 2sb941 2SA1227A 2SB596 2SB1417 2SA1S07 2SA1220 2SA1S07 abstract |
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| Abstract: - 60 - S « Type No. tt « Manuf. H !M SANYO M S TOSHIBA B a NEC B iL HITACHI « ± m FUJITSU « T MATSUSHITA H m MITSUBISHI â-¡ - A ROHM 2SB 1013 V H. 2SA1160 2SA1160 2SB1068 2SB1068 2SB976 2SB976 2SB1426 2SB1426 2SB 1014 «- S ß 2SA1020 2SA1020 2SB1116 2SB1116 2SB621 2SB621 2SB1Q44M 2SB1Q44M 2S8 1015 - M 'S 2SB1134 2SB1134 2SB1094 2SB1094 2SB941 2SB941 2SB1370 2SB 1016 , ü 2 2SB1454 2SB1454 2SB1095 2SB1095 2SB1063 2SB1063 2SB1294 2SB1294 2SB 1017 S 3E 2SB1454 2SB1454 2SB1095 2SB1095 2SB942A 2SB942A 2SA1635 2SA1635 2SB 1018 M 2 , 2SB1085A 2SB1085A 2SB 1038 „ B « 2SB824 2SB824 2SA1096 2SA1096 2SB1370 2SB 1039 B m 2SB920 2SB920 2SB1063 2SB1063 2SB1294 2SB1294 2SB 1040 ^ ... | OCR Scan |
1 pages, |
2SB1095 2SB1068 2SB1094 2SA934 2SB1116 2SB1134 2SA1160 2SB1426 2SA1020 2SB621 2SB941 2SB976 2SB1067 2S897 2SB564 2SA1160 abstract |
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| Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1370 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -0.3V(Typ.)@IC= -2A ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Designed for power switching applications .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER scs .i VALUE ww VCBO Collector-Base , Power Transistor 2SB1370 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL ... | Original |
2 pages, |
2SB1370 2SB1370 abstract |
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| Abstract: Transistors 2SB1370 2SB1655/2SB1565 2SB1655/2SB1565 I Power Transistor ( 2SB1370 •Features 1 ) Low saturation voltage, typically Vce (sat) =-0.3 Vat le / Ib= -2A / -0.2A. 2 ) Excellent DC current gain characteristics. 3 ) Pc = 2W(Ta=25*C) /30W(Tc=25°C) 4 ) Wide SOA (safe operating area). •Packaging specifications and hFE Type 2SB1370 Package TO-220FN hFE EF Code - Basic ordering unit (pieces) 500 60V, -3A) •Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VcBO ... | OCR Scan |
1 pages, |
2SB1655 2SB1565 LE50 2SB1370 2SB1655/2SB1565 2SB1370 abstract |
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| Abstract: 1052,' fé T 2SB507 2SB507 2SB1015 2SB1015 2SB1370 2SB 1053 fé T 2SA1781 2SA1781 2SA1162 2SA1162 2SA812 2SA812 2SA1235 2SA1235 2SA1037K 2SA1037K 2SB ... | OCR Scan |
1 pages, |
2sb891 25B501 2SA1173 2SA1200 2SA1384 2SA1415 2SA1705 2SA683 2SB1015 1055 2SB793 2SB1370 2SB764 2SB605 2SB507 2SB764 abstract |
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| Abstract: 2sb1506 2SB1393 2SB1393 2SB1370 2SB 1488 fé T 2SA1785 2SA1785 2SA1776 2SA1776 2SB 1489 fé T 2SA1830 2SA1830 2SB 1491 B m 2SA1753 2SA1753 ... | OCR Scan |
1 pages, |
2SB973 2SA1704 2SA1709 2SA1719 2SA1774 2SA1832 2SA1836 2SB1117 2SA1020 2SB1434 2SB1452 2SB881 2SA1692 2SB348 2SB1370 2SA1709 abstract |
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| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2SB1370 | N/A | Silicon PNP | |
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| 2SB1370 | N/A | Power, General Purpose | |
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| 2SB1370D | ROHM Electronics | Si PNP Power BJT | |
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| 2SB1370E | ROHM Electronics | Si PNP Power BJT | |
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| 2SB1370F | ROHM Electronics | Si PNP Power BJT | |
| NTE Electronics Part | Industry Part |
| Part | Similar Part | Notes |
| 2SB1370 Buy | 2N6314 Buy | |
| 2SB1370 Buy | 2SA1488 Buy | |
| 2SB1370 Buy | 2SA1635 Buy | |
| 2SB1370 Buy | 2SB1015 Buy | |
| 2SB1370 Buy | 2SB1094 Buy | |
| 2SB1370 Buy | 2SB1133 Buy | |
| 2SB1370 Buy | 2SB1135 Buy | |
| 2SB1370 Buy | 2SB1335 Buy | |
| 2SB1370 Buy | 2SB1366 Buy | |
| 2SB1370 Buy | 2SB1565 Buy |