NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SB1308 | N/A | Transistor Substitution Data Book 1993 |
1 pages, |
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| 2SB1308 | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
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| 2SB1308 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
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| 2SB1308 | ROHM Electronics | Power Transistor(50V, 3A) |
1 pages, |
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| 2SB1308 | ROHM Electronics | Power Transistor (-50V, -3A) |
2 pages, |
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| 2SB1308 | ROHM Electronics | Transistor Selection Guide |
1 pages, |
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| 2SB1308 | Transys Electronics | Plastic-Encapsulated Transistors |
1 pages, |
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| 2SB1308 | N/A | Japanese Transistor Cross References (2S) |
1 pages, |
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| 2SB1308T100P | ROHM Electronics | Power Transistor (-50 V, -3 A) |
1 pages, |
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| 2SB1308T100Q | ROHM Electronics | Power Transistor (-50 V, -3 A) |
1 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Transistors 2SB1308 2SD1963 2SD1963 (94S-166-B204 94S-166-B204) (94S-342-D204 94S-342-D204) 290 ... | Original |
1 pages, |
2SD1963 2SB1308 B204 94S-166-B204 94S-342-D204 2SB1308 abstract |
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| Abstract: 2SB1308 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: SOT-89 TRANSISTOR (PNP) 1. BASE 0.5 W (Tamb=25) -3 2. COLLECTOR 1 A -30 3. EMITTER 2 3 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-50uA ... | Original |
1 pages, |
2SB1308 2SB1308 abstract |
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| Abstract: 2SA1869 2SB968 2SB968 2SB1308 ... | OCR Scan |
1 pages, |
1866 2SA1400-Z 2sa158 2SA1588 2sa1727 2SA1745 2SA1772 2SA1832 2SB1219 2SB1308 2SB1462 2SB1475 2sb941 nec 772 UMS1 2SA1832 abstract |
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| Abstract: SPICE PARAMETER 2SB1308 by ROHM TR Div. * Q2SB1308 Q2SB1308 PNP BJT model * Date: 2006/11/14 .MODEL Q2SB1308 Q2SB1308 PNP + IS=500.00E-15 00E-15 + BF=167.27 + VAF=6.0750 + IKF=13.423 + ISE=500.00E-15 00E-15 + NE=1.8133 + BR=101.30 + VAR=100 + IKR=.95905 + ISC=2.4533E-12 4533E-12 + NC=1.2497 + NK=.74369 + RE=17.000E-3 000E-3 + RB=.4 + RC=35.569E-3 569E-3 + CJE=559.05E-12 05E-12 + MJE=.3951 + CJC=152.17E-12 17E-12 + MJC=.28029 + TF=715.49E-12 49E-12 + XTF=327.81 + VTF=51.553 + ITF=55.906 + TR=9.7739E-9 7739E-9 + XTB=1.5000 ... | Original |
1 pages, |
BJT BF 167 2SB1308 Q2SB1308 00E-15 4533E-12 000E-3 569E-3 05E-12 17E-12 49E-12 7739E-9 2SB1308 abstract |
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| Abstract: h -7 > y 7 $ /Transistors 2SB1308 2SB1308 I VZ^VTfr-fU-l-M PNP Epitaxial Planar PNP Silicon Transistor tëJii&iîMgfll/Low Freq. Power Amp. • ttft 1) VcEfsat)*?®^« VcE(sat)=-0.45V (Max.) (Ic/Ib=-1-5A/-0.15A) 2) hFE ««^ÃŽÃŽtÃŽ^ff • Features 1) LowVcE(sat) VCE (sat)=-0.45V (Max.) (IC/lB=-1-5A/-0.15A) 2) Excellent current characteristics of DC current amplification factor hFE • ftJ&Tf&BI/Dimensions (Unit : mm) I.6ÃŽ0.I -m â- mm J0.5±0.l m i^i CD (2) Collector (3) Emitter ROHM : MPT EIAJ : SC-62 SC-62 «ÉPM0* : BF • ... | OCR Scan |
2 pages, |
2SB1308 2SB1308 abstract |
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| Abstract: 2SB1308 Transistors Power transistor (-50V, -3A) 2SB1308 Features 1) Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SD1963 2SD1963. External dimensions (Unit : mm) MPT3 0.5 4.5 1.6 2.5 4.0 , -20V, IE=0A, f=1MHz Measured using pulse current. Rev.A 1/2 2SB1308 Transistors Packaging specifications and hFE Type 2SB1308 Package MPT3 hFE PQR Marking BF Code ... | Original |
3 pages, |
T100 2SD1963 2SB1308 2SB1308 abstract |
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| Abstract: Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: SOT-89 TRANSISTOR (PNP) 1. BASE 0.5 W (Tamb=25) -3 2. COLLECTOR 1 A -30 3. EMITTER 2 3 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions MIN MAX ... | Original |
1 pages, |
2SB1308 datasheet abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: SOT-89 TRANSISTOR (PNP) 1. BASE 0.5 W (Tamb=25) -3 2. COLLECTOR 1 A -30 3. EMITTER 2 3 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions ... | Original |
1 pages, |
2SB1308 2SB1308 abstract |
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| Abstract: 2SA1213 2SA1213 2SB1073 2SB1073 2SB1308 2SB 1302 J H n ZSB1571 ZSB1571 2SB1073 2SB1073 2SB1386 2SB1386 2SB 1303 = * 2SB938A 2SB938A 2SB ... | OCR Scan |
1 pages, |
2SB949A 2SB1117 2SB1131 2SB1226 2SA1431 2SB1308 2SB1402 2SB1526 2SB679 2SB884 2SB949 2SB1105 2SA1307 2SB1306 2SB747 2SB884 abstract |
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| Abstract: Transistors SMD Type Power Transistor 2SB1308 Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V IC -3 A ICP * -5 A W Collector current Collector current(Pulse) Collector power ... | Original |
1 pages, |
MARKING BF MARKING 15A 2SB1308 bf TRANSISTOR smd BF Marking SMD TRANSISTOR MARKING BF 2SB1308 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| No abstract text available www.datasheetarchive.com/download/4940951-673495ZC/2sb1308qr.jpg |
User Photos | 23/05/2012 | 8.81 Kb | JPG | 2sb1308qr.jpg |
| 5120T 5120T 5120T 5120T@pip/PBSS5120T_1.html,1 2SB1302 2SB1302 2SB1302 2SB1302 PBSS5520X PBSS5520X PBSS5520X PBSS5520X@pip/PBSS5520X_2.html,1 2SB1308 PBSS5320X PBSS5320X PBSS5320X PBSS5320X@pip/PBSS5320X_3 www.datasheetarchive.com/files/philips/xref/data/xref-v1.txt |
Philips | 15/06/2005 | 676.98 Kb | TXT | xref-v1.txt |
| 5120T 5120T 5120T 5120T@pip/PBSS5120T_1.html,1 2SB1302 2SB1302 2SB1302 2SB1302 PBSS5520X PBSS5520X PBSS5520X PBSS5520X@pip/PBSS5520X_2.html,1 2SB1308 PBSS5320X PBSS5320X PBSS5320X PBSS5320X@pip/PBSS5320X_3 www.datasheetarchive.com/download/46441519-653735ZC/xref-v1.zip (xref.txt) |
Philips | 15/06/2005 | 97.68 Kb | ZIP | xref-v1.zip |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2SB1308 | N/A | Silicon PNP | |
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| 2SB1308 | N/A | Power, General Purpose | |
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| 2SB1308P | ROHM Electronics | Si PNP Power BJT | |
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| 2SB1308Q | ROHM Electronics | Si PNP Power BJT | |
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| 2SB1308R | ROHM Electronics | Si PNP Power BJT | |
| NXP Semiconductor / Philips Part | Industry Part | Manufacturer | Type | Comments |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| NSS20200LT1G Buy | 2SB1308 Buy | Rohm | Close |
| Panasonic Part | Manufacturer | Similar Part | Manufacturer |
| Part | Similar Part | Notes |
| 2SB1308 Buy | 2N6730 Buy | |
| 2SB1308 Buy | 2SA1936 Buy | |
| 2SB1308 Buy | 2SB1073 Buy | |
| 2SB1308 Buy | 2SB1120 Buy | |
| 2SB1308 Buy | 2SB1301 Buy | |
| 2SB1308 Buy | 2SB1302 Buy | |
| 2SB1308 Buy | 2SB1365 Buy | |
| 2SB1308 Buy | 2SB1386 Buy | |
| 2SB1308 Buy | 2SB736 Buy | |
| 2SB1308 Buy | KT639E Buy |