NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SB1110 | Hitachi Semiconductor | SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
2 pages, |
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| 2SB1110 | N/A | Transistor Substitution Data Book 1993 |
1 pages, |
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| 2SB1110 | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
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| 2SB1110 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
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| 2SB1110 | N/A | The Transistor Manual (Japanese) 1993 |
2 pages, |
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| 2SB1110 | Renesas Technology / Hitachi Semiconductor | Silicon PNP Epitaxial |
5 pages, |
Original | |
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| 2SB1110 | N/A | Cross Reference Datasheet |
1 pages, |
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| 2SB1110 | N/A | Transistor Shortform Datasheet & Cross References |
1 pages, |
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| 2SB1110 | N/A | Japanese Transistor Cross References (2S) |
1 pages, |
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| 2SB1110B | N/A | Transistor Shortform Datasheet & Cross References |
1 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SB1109 2SB1109, 2SB1110 Silicon PNP Epitaxial Application Low frequency high voltage amplifier , Base 3 Absolute Maximum Ratings (Ta = 25癈) Ratings Item Symbol 2SB1109 2SB1109 2SB1110 Unit , temperature Tstg � to +150 � to +150 癈 2SB1109 2SB1109, 2SB1110 Electrical Characteristics (Ta = 25癈 , : hFE1* 1 VCE(sat) Cob Typ 2SB1110 Typ 1. The 2SB1109 2SB1109 and 2SB1110 are grouped by hFE1 , ) 2SB1109 2SB1109, 2SB1110 DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics ... | Original |
5 pages, |
2SB1109 2SB1110 2SD1609 2SD1610 2SB1109 abstract |
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| Abstract: HITACHI 2SB1109 2SB1109, 2SB1110 SILICON PNP EPITAXIAL LOW FREQUENCY HIGH VOLTAGE AMPLIFIER COMPLEMENTARY PAIR WITH 2SDI609 2SDI609 AND 2SD1610 2SD1610 tin " -I Q £ £ 11.0 ±0.5 _ 3.7 ±0.7 Vs 15.610.5 1. Ettiiiter 2. Collector X Raw [OimcisiiiiK in mm) 2.3 ±0.3 (JEDEC TO-126 MOD.) I ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Item Symbol 2SBI109 2SBI109 2SBI110 2SBI110 Unit Collector 1o base voltage Veno -160 -200 V Collccior to , 2SB1109 2SB1109, 2SB1110 TYPICAL OUTPUT CHARACTERISTICS - lM - - L'.O ... | OCR Scan |
2 pages, |
i09 b 2SD1610 2SB1110 2SB1109 2SDI609 2SB1109 abstract |
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| Abstract: 723B 2SB699 2SB700b _ B iL 2SA818 2SA818 2SB1110 2SB 719 _ B iL 2SA1011 2SA1011 2SA968 2SA968 2SB546A 2SB546A 2SB94 2SB94Û 2SB1085A 2SB1085A 2SB 720 - B ... | OCR Scan |
1 pages, |
703A 2SA1208 710a 2SA950 2SA1232 2SB 710 2SA1036K 709a 2SB817 2SB645 Toshiba 2SAB12 2SB 731 2SB756 2SA818 2SB681 2SA950 abstract |
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| Abstract: 2SA1379 2SB810 2SB810 2SB1030 2SB1030 2SA854S 2SA854S 2SA 1379 B il 2SA1413 2SA1413 2SA 1380 ^ z # 2SA1091 2SA1091 2SA1142 2SA1142 2SB1110 2SA914 2SA914 ... | OCR Scan |
1 pages, |
2SA1309A 2SA1220 2SA1142 2SA1123 2SA953 2SB1011 2SA 1383 Nec 2sb1011 K 1357 2SB942A 2SB889 2SB825 2SB596 2sb1197k K 1358 2SA953 abstract |
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| Abstract: 2SD1609 2SD1609, 2SD1610 2SD1610 SILICON NPN EPITAXIAL HITACHI LOW FREQUENCY HIGH VOLTAGE AMPLIFIER OMPLEMENTARY PAIR WITH 2SB1109 2SB1109 AND 2SB1110 ¡8 M.fl-kO/i 3.7 ± 0.7 -fa- is, s ±05 3 3 « o +1 s 2.310.3 (JEDEC TO-126 MOD.) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) 1. l-rtiiiter 2. Colfccicw 3. Base (Dimeittioiu in mm) Item Symbol 2SD1609 2SD1609 2SDI610 2SDI610 Unit Collector to base voltage Veno 160 200 V Collector lo emitter voltage Veno 160 200 V Emitter to base voltage Vebo 5 5 V Collector currcrn Ic 100 100 in A ... | OCR Scan |
2 pages, |
2SD1610 2SB1110 2SD1609 2SB1109 2SD1609 abstract |
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| Abstract: 60 320 -5 -0.01 -2 -0.03 -0. 003 2SB1110 BJC LF HV A -200 -200 -0.1 1.25 -10 -160 60 320 -5 -0.01 , 2SB1110 0.1* 0.5* 1.5* 2SD1491 2SD1491 ' (TO-126) ECBC, Da/R 2SB1111 2SB1111 180* -10 -0.05 60* 2SD1614 2SD1614 ... | OCR Scan |
2 pages, |
MP-45 2SB1072S 2SB1073 2SB1075 2SB1076M 2SB1077 2SB1078K 2SB1079 2SB1085 2SB1085A 2SB1086A 2SB1099 2SB1100 2SB1103 2sb111 2SB1072L 2SB1072S 2SB1072L abstract |
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| Abstract: -160 -160 -0. 1 1.25 -10 -140 60 320 -5 -0.01 -2 -0.03 -0. 003 2SB1110 BJC LF HV A -200 -200 -0.1 , 2SB1109 2SB1109 140* -5 -0.01 5.5* 2SD1610 2SD1610 (TO-126) ECB 2SB1110 0.1* 0.5* 1.5* 2SD1491 2SD1491 ' (TO-126 ... | OCR Scan |
4 pages, |
ecb CE 315 2sb1098 2SB1109 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974 2SB975 2SD1347 2SB984 2SB977A 2SB977 2SB976 2SB966 abstract |
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| Abstract: * 2SB1109 2SB1109 (TO-126) ECB 2SD1609 2SD1609 140* 5 0.01 3.8* 2SB1110 (TO-126) ECB 2SD1610 2SD1610 (N Type ... | OCR Scan |
2 pages, |
2SD1588 2SD1585 2SD1586 2SD1587 2SD1584 2SD1589 2SD1590 2SD1591 2SD1592 2SD1583-Z 2SB1103 2SD1595 2SD1584-Z 2SB1100 LFPA 2SD1583-Z abstract |
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| Abstract: 2SD1609 2SD1609, 2SD1610 2SD1610 Silicon NPN Epitaxial ADE-208-916 ADE-208-916 (Z) 1st. Edition Sep. 2000 Application Low frequency high voltage amplifier complementary pair with 2SB1109 2SB1109 and 2SB1110 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25癈) Ratings Item Symbol 2SD1609 2SD1609 2SD1610 2SD1610 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to base voltage VEBO 5 ... | Original |
6 pages, |
2SD1610 2SD1609 2SB1110 2SB1109 ADE-208-916 2SD1609 abstract |
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| Abstract: 2SD1609 2SD1609, 2SD1610 2SD1610 Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB1109 2SB1109 and 2SB1110 Outline TO-126 MOD 2 3 1 ID 1. Emitter 2. Collector 3. Base 2 32 k (Typ) 3 0.4 k (Typ) 1 Absolute Maximum Ratings (Ta = 25癈) Ratings Item Symbol 2SD1609 2SD1609 2SD1610 2SD1610 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to base voltage VEBO 5 ... | Original |
5 pages, |
2SD1609 2sd1609 equivalent 2SD1610 2SB1109 2SB1110 2SD1609 abstract |
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| Abstract: - 62 - m « Type No. tt « Manuf. = !M SANYO u: TOSHIBA B m NEC B XL HITACHI * ± a FUJITSU «S T MATSUSHITA 3 « MITSUBISHI - - A ROHM 2SB 1076 - -A 2SA1706 2SA1706 2SB 1077 „ a i 2SB880 2SB880 2SB676 2SB676 2SB601 2SB601 2SB950 2SB950 2SB1341 2SB1341 2SB 1078 b s 2SB886 2SB886 2SB673 2SB673 2SB1108 2SB1108 2SB1343 2SB1343 !SB 1078K 1078K B ÏZ 2SB1108 2SB1108 2SB1343 2SB1343 2SB 1080 a a 2SB632K 2SB632K 2SA962A 2SA962A 2SA699 2SA699 2SB1009 2SB1009 2SB 1085 , D-A 2SA1011 2SA1011 2SA968 2SA968 2SB536 2SB536 2SB861 2SB861 2SB940 2SB940 2SB 1086ft - -A 2SA1011 2SA1011 2SA968 2SA968 2SB536 2SB536 2SB861 2SB861 2SB94 2SB94Û 2SB 1086 - --A 2SA1249 2SA1249 2SA1021 2SA1021 2SA12 2SA12 ... | OCR Scan |
1 pages, |
2SB1370 2SB536 2SA122 2SB601 2S8834 NEC 2SA1706 2SB673 2SB676 2SB880 2SB882 2SB950 2SB975 1091 2S8834 1086a 2SA1706 abstract |
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| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2SB1110 | Hitachi Semiconductor | Si PNP Power BJT | |
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| 2SB1110 | N/A | Silicon PNP | |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| KSA1142 | KSA1142 Buy | 2SB1110 Buy | Hitachi | Close | PowerBJT | PNP Epitaxial Silicon Transistor |
| KSA1142 | KSA1142OSTU Buy | 2SB1110B Buy | Hitachi | Close | PowerBJT | PNP Epitaxial Silicon Transistor |
| KSA1142 | KSA1142 Buy | 2SB1110C Buy | Hitachi | Close | PowerBJT | PNP Epitaxial Silicon Transistor |
| Part | Similar Part | Notes |
| 2SB1110 Buy | 2N5415S Buy | |
| 2SB1110 Buy | 2SA1352 Buy | |
| 2SB1110 Buy | 2SA1352..1353 Buy | |
| 2SB1110 Buy | 2SA1353 Buy | |
| 2SB1110 Buy | 2SA1370 Buy | |
| 2SB1110 Buy | 2SA1380 Buy | |
| 2SB1110 Buy | 2SA698 Buy | |
| 2SB1110 Buy | 2SA914 Buy | |
| 2SB1110 Buy | 2SB1007 Buy | |
| 2SB1110 Buy | 2SB1109 Buy |