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2SB1068 Datasheet

Part Manufacturer Description PDF Type
2SB1068 NEC Semiconductor Selection Guide 1995 Original
2SB1068 NEC Semiconductor Selection Guide Original
2SB1068 N/A The Transistor Manual (Japanese) 1993 Scan
2SB1068 N/A Transistor Substitution Data Book 1993 Scan
2SB1068 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SB1068 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SB1068 N/A Japanese Transistor Cross References (2S) Scan
2SB1068 N/A Cross Reference Datasheet Scan
2SB1068 NEC Silicon Transistor Scan
2SB1068 NEC PNP SILICON TRANSISTOR Scan
2SB1068K NEC PNP Silicon Transistor Scan
2SB1068L NEC PNP Silicon Transistor Scan
2SB1068U NEC PNP Silicon Transistor Scan

2SB1068

Catalog Datasheet MFG & Type PDF Document Tags

2SB1068

Abstract: 2SD1513 2SB1068 -2A , -20V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES G Low Collector Saturation Voltage High DC Current Gain High Collector Power Dissipation Complementary of the 2SD1513 H Emitter Collector Base J A D REF. B A B C D E F G H J K K CLASSIFICATION OF hFE (1) Product-Rank 2SB1068-L 2SB1068-K Range 135~270 200~400 E 2SB1068-U
SeCoS
Original

2SB1068

Abstract: 2SD1513 NEC PNP SILICON TRANSISTOR 2SB1068 DESCRIPTION The 2SB1068 is designed for use in driver and output stages of audio frequency amplifiers. FEATURES â'¢ Low Collector Saturation Voltage VcE(sat) : -0.25 V TYP. (Ic =-1.0 A, lB =-10 mA) â'¢ High DC Current Gain hFE : 350 TYP. (Vce =-2.0 V, lc=-100 mA) â'¢ High Total Power Dissipation PT : 0.75 W (Ta=25 °C) â'¢ Complementary to The NEC 2SD1513 NPN , Test Conditions : Vqe = -2.0 V, Iq = -100 mA 224 NEC 2SB1068 TYPICAL CHARACTERISTICS (Ta = 25 °C
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OCR Scan

2SA933S

Abstract: 2SB737 - 27 A - 55 Type No. 2SA1285 2SA1285A 2SA1286 , 2SA1287J 2SA1288 2SA1289 , H. H H H H tt Manuf. # « SANYO 2SA1208 2SA1208 2SA1770 TOSHIBA 2SA1145 2SA1020 B NEC n B HITACHI tL M ± FUJITSU ifi & T MATSUSHITA 2SA1124 e. m - ROHM MITSUBISHI 2SA1282 2SB1212 2SB1425 2SA916 2SB1068 2SA1124 2SB819 2SA684 * 2SBT64 2SBS34 2SA1012 2SBS53 , 2SB1197K 2SA933S 2SB1426 2SB1295 2SA1782 2SA1048 2SA1174 2SB1068 2SA1302 2SB1037 2SA1258 2SA1011 2SA1606
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OCR Scan
2SA644 2SA1310 2SB873 2SB940 2SA1299 2SB1186B 2SB737 2SA1302 TOSHIBA 2SA1286H 2SA1015 2SA1328 2SB320L 2SB926 2SA1069 2SA1646

2SB1039

Abstract: 2SB1045 /PA/PD -80 -80 -2 1.5 10 -10 -80 2000 -2 -1 -1. 5 -2 -1 -0.001 2SB1068 HB LF PA -20 -16 -2 0.75 -0. , 100 -10 -0.05 60» 2SD1513 TO-92JF5 ECB 2SB1068 150* -5 -0. 5 0. 3* 0. 1* 0.4» 2SD1537
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OCR Scan
2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1039 2SB1045 2SB1038

2SA1115

Abstract: 2SA1115 E 2SA1174 2SB1068 2SA1175 2SB736 2SA953 RN2404 RN2403 RN2402 RN2204 RN22Q3 2SA1468 2SB792 2SB709
-
OCR Scan
2SA1032 2SA1309A 2SA1018 2SA879 2SA1115 2SA1624 2SA1115 E DTA124EK RT1P141C 2SA1334 2SA1318 2SAU75

2SB1013

Abstract: 2SA934 - 60 - S « Type No. tt « Manuf. H !M SANYO M S TOSHIBA B a NEC B iL HITACHI « ± m FUJITSU « T MATSUSHITA H m MITSUBISHI ⡠- A ROHM 2SB 1013 V H. 2SA1160 2SB1068 2SB976 2SB1426 2SB 1014 «- S à 2SA1020 2SB1116 2SB621 2SB1Q44M 2S8 1015 - M 'S 2SB1134 2SB1094 2SB941 2SB1370 2SB 1016 , ü 2 2SB1454 2SB1095 2SB1063 2SB1294 2SB 1017 S 3E 2SB1454 2SB1095 2SB942A 2SA1635 2SB 1018 M 2 2SB1467 2SA1742 2SB946 2SB1290 2SB 1019 _ 2SB1135 2SA1742 2SB953A 2SB 1020
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OCR Scan
2SD2238 2SB1067 2SB564 2SA934 2SA1243 2SB1013 nec 1026 2S897 2SB1228 2SB1431 2SB79KK 2SB1108 2SB1344 2SB1104

sa1306

Abstract: 2SB793 © T 2SA1784 2SB 1210 â" â¡ â'"A 2SB893 2SA1300 2SB1068 2SB738 2SB976 2SA1282 2S8 1211
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OCR Scan
2SA1306 2SB940A 2SA1203 2SB1114 2SB1085B 2SA1306A sa1306 2SB793 2sb804 SA1306 SA1606 2SBU23

2sa850

Abstract: 2sa1047 2SB861 2SA921 2SA1309A 2SA847A 2SA1111 2SB1068 2SB819 2SA95Û 2SA817 2SA817 2SA1162 2SA968 2SA968 2SA1359
-
OCR Scan
2SA930 2SA872 2SA999L 2SB564A 2SA992 2SA987 2sa850 2sa1047 2sa9630 2SA931 2SA932 2SA933 2SA929

2SA1146

Abstract: 2SB1200 1058 0 à 2SB926 2SA1160 2SB1068 2SB976 2SB1010 2SB 1059 S fi 2SB1229 2SA1315 2SB1116 2SB621
-
OCR Scan
2SB764 2SB605 2SA1200 2SA1173 2SB1200 2SB1576 2SA1146 2SA937 2SB1371 2SA1Q20 2SA683 2SA1705 2SA1415
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO â'" 92 2SD1513 TRANSISTOR (NPN) 1. EMITTER 2. COLLECTOR FEATURES Low Collector Saturation High DC Current Gain Complementary to The 2SB1068 PNP Transistor 3. BASE MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 16 V VEBO Emitter-Base Voltage 6 V IC Jiangsu Changjiang Electronics Technology
Original
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO â'" 92 2SB1068 TRANSISTOR (PNP) 1. EMITTER FEATURES Low Collector Saturation Voltage High DC Current Gain High Collector Power Dissipation Complementary To The 2SD1513 NPN Transistor 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -16 V Jiangsu Changjiang Electronics Technology
Original

2SD1557

Abstract: 2SA1152 2SB1068 (16 V/2.0 AC1[ ] (20 V/2.0 AQ1[ ] (20 V/2.0 ~3.0 1) VCES 150 2SA6751) 2SC3615 , 2SB1068 2SB1114 2SB1116 2SB1115 2SB1116A 2SB1115A 2SB804 2SB805 2SB806 2SC2001
NEC
Original
2SA1152 2SD1557 2SB1581 2SC4063 2SC4333 high hfe transistor 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 2SC1674

2SD1491

Abstract: 2SD1510 * 2SB1068 T0-92ÃÃ ECB 2SD1513 2. 5* 10 0.5 0.1* 0. 3* 2. 5* TO-22OAB0 BCE 2SD1516 25* 10 0. 5 0.1
-
OCR Scan
2SD1491 2SD1494 2SD1496 2SD1497 2SD1499 2SD1500 2SD1510 TO-22OAB0 2SD1533

TRANSISTOR BJ 033

Abstract: 2SB1068 SEC Silicon Transistor 2SB1068 i&mmwimmm PNP Silicon Epitaxial Transistor Audio Frequency Amplifier #fi/FEATURES K 7 -i T, v v / -f K K 7 j "TI?, o A; è < , hFE f, ffi^v?^ fâftl'ffiEF. Tt0 Pt = 0.75 W, hfe = 350 TYP. (VCE = -2.0 V, Ic = â'"100 mA) VcF.(sat)=-0.25 V TYP.(le = â'" 1.0 A,IB = -10 mA) o2SD15131 3>7,'J/>^1) TWmX'è ito 3ê*t«*:S:fè/ABSOLUTE MAXIMUM RATINGS (Ta=25 °C) Jl g Hg. -if- S fë # fô 3 U- ? 9 â  X Failli VcBO -20 V 3 u ? 9 â  S. ; -y 9mm!± VcEO -16 V â x Ã
-
OCR Scan
TRANSISTOR BJ 033 JAN 5751 m5ss 2SD15131 PWS10 SC-43B

uPD16305

Abstract: uPD63724A 2SA990 2SA992 2SB1068 2SB1116 2SB1116A 2SB1300 2SC1674 2SC1841 2SC1842 2SC1843 2SC1845 2SC2001 2SC2002 , 2SC3624A 2SC4177 2SC4178 2SC4179 2SC4181 2SC945 2SA1330 2SA1376 2SA952 2SA953 2SA954 2SB1068 2SB1114
NEC
Original
uPD16305 uPD63724A UPC5023 upc5024 uPD65656 UPC2710 PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016

2SB1013

Abstract: 2SB1014 2SB1061 2SB1062 2SB1063 2SB1064 2SB1065 2SB1066 2SB1067 2SB1068 2SB1069 2SB1070 2SB1071 -20
-
Original
2SB1001 2SD1367 2SB1002 2SD1368 2SB1003 2SB1004 2SB1014 2SB1074 2SB1060 2sb1099 2SB1047 2SB1100

uPD72002-11

Abstract: uPD16305 2SA1206 2SA1376 2SA1376A 2SA1544 2SA1625 2SA675 2SA733 2SA952 2SA953 2SA954 2SA988 2SA990 2SA992 2SB1068 , 2SC945 2SA1330 2SA1376 2SA952 2SA953 2SA954 2SB1068 2SB1114 2SB1115 2SB1115A 2SB1116 2SB1116A 2SB564
NEC
Original
uPD72002-11 uPC1237 upc1701 2SD1392 uPD78F0841 uPD65 PD750104 PD750106 PD750108 PD75P0116 PD750064 PD750066

pa1476h

Abstract: pa80c CDROM CDROM X13769XJ2V0CD00 08-1 s TO92 V CEO (V) ~ 15 IC (A) ~20 m 2SA1206* ~ 50 m 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SC1842 2SC1843 AA1[ ] AN1[ ] 2SC2901 * ~ 200 m 2SC3622 * (150 mA) 2SC3622A * (150 mA) 2SC3615* (300 mA) 2SA952 2SC2001 2SC3616 * (25 V/ 700 mA) AB1[ ] (25 V/ 700 mA) AP1[ ] (25 V/ 700 mA) 2SD1513 (16 V/2.0 A) 2SB1068 , 08-18 s (2/4) TO92 1/2 2SA952 2SA953 2SA954 2SA1376 2SB564 2SB605 2SB1068 2SB1116
NEC
Original
PA1456H PA1478H PA1501H PA1556AH pa1476h pa80c pa1437h PA1556A 2SD1616 2SC2003 2SD1698 2SD1616A 2SD1701 2SC2786

2SA1444 equivalent

Abstract: transistor equivalent table / 700 mA) 2SD1513 (16 V/2.0 A) 2SB1068 (16 V/2.0 A) AQ1[ ] (20 V/2.0 A) 2SB1300 (16 V/3 A) 2SB1116 , MINI MOLD 2SB624 2SB736 2SB736A 2SA1330 2SB564 2SB605 2SB1068 2SB1116 2SB1116A 2SC2001 2SC2002 2SC2003
NEC
Original
2SA1444 equivalent transistor equivalent table BA1F4M 2sd882 equivalent POWER MOS FET 2sj 2sk 2SK type 2SA1459 2SC2787 2SC2784 2SC2785 2SC3623 2SC3732

2SC5664

Abstract: 2sc5292 2SD1020 2SC2787 2SC2785 Selection Guide D18597EJ1V0SG TO-92 500 2500 2SB1116 2SB1300 2SB1068
NEC
Original
MP-25LZK 2SC5664 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR PC1093j

2SB1068

Abstract: 2SD1513 SEC Silicon Transistor 2SB1068 i&mmwimmm PNP Silicon Epitaxial Transistor Audio Frequency Amplifier #fi/FEATURES K 7 -i T, v v / -f K K 7 j "TI?, o A; è < , hFE f, ffi^v?^ fâftl'ffiEF. Tt0 Pt = 0.75 W, hfe = 350 TYP. (VCE = -2.0 V, Ic = â'"100 mA) VcF.(sat)=-0.25 V TYP.(le = â'" 1.0 A,IB = -10 mA) o2SD15131 3>7,'J/>^1) TWmX'è ito 3ê*t«*:S:fè/ABSOLUTE MAXIMUM RATINGS (Ta=25 °C) Jl g Hg. -if- S fë # fô 3 U- ? 9 â  X Failli VcBO -20 V 3 u ? 9 â  S. ; -y 9mm!± VcEO -16 V â x Ã
-
OCR Scan
PA33
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