NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SB0788 | Panasonic | PNP Transistor |
3 pages, |
Original |  |
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| 2SB0788 | Panasonic | Silicon PNP epitaxial planar type small signal transistor |
2 pages, |
Original | |
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| 2SB0788 | Panasonic | Silicon PNP epitaxial planer type |
3 pages, |
Original | |
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| 2SB0788Q | Panasonic | Silicon PNP Epitaxial Planar Type Transistor |
3 pages, |
Original | |
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| 2SB0788R | Panasonic | Silicon PNP Epitaxial Planar Type Transistor |
3 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Transistors 2SB0788 (2SB788 2SB788) Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 2SD0958 (2SD958 2SD958) Unit: mm (1.0) 4.1�2 2.0�2 4.5�1 R 0.9 R 0.7 2.4�2 � High collector-emitter voltage (Base open) VCEO � Low noise voltage NV � M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the , parenthesis shows conventional part number. Publication date: January 2003 SJC00055BED SJC00055BED 1 2SB0788 ... | Original |
3 pages, |
2SD958 2SD0958 2SB788 2SB0788 2SB0788 abstract |
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| Abstract: Transistors 2SB0788 (2SB788 2SB788) Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 2SD0958 (2SD958 2SD958) Unit: mm 2.5�1 0.55�1 Symbol Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Rating Unit VCBO -120 -120 V VEBO -7 IC Storage temperature 400 4.5�1 癈 -55 to +150 1: Base 2 , Publication date: January 2003 SJC00055BED SJC00055BED 1 2SB0788 IC VCB Collector current IC (mA) 25癈 ... | Original |
3 pages, |
2SD958 2SD0958 2SB788 2SB0788 2SB0788 abstract |
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| Abstract: Transistor 2SB0788 (2SB788 2SB788) Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD0958 2SD0958 (2SD958 2SD958) Unit: mm 2.5�1 s Absolute Maximum Ratings (1.0) 4.5�1 3.5�1 R 0.9 R 0.7 4.1�2 2.0�2 q High collector to emitter voltage VCEO. Low noise voltage NV. M type package allowing easy automatic and manual insertion as well as , the Parenthesis shows conventional part number. 197 Transistor 2SB0788 PC - Ta IC - ... | Original |
3 pages, |
2SD958 2SD0958 2SB788 2SB0788 2SB0788 abstract |
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| Abstract: Transistor 2SB0788 (2SB788 2SB788) Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD0958 2SD0958 (2SD958 2SD958) Unit: mm 6.9±0.1 1.0 0.85 (Ta=25°C) 4.5±0.1 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V , number. 1 Transistor 2SB0788 PC - Ta IC - VBE 25°C 50 400 350 300 250 200 ... | Original |
3 pages, |
2SD958 2SD0958 2SB788 2SB0788 2SB0788 abstract |
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| Abstract: Transistors 2SD0958 2SD0958 (2SD958 2SD958) Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788 2SB788) Unit: mm 2.5±0.1 Emitter-base voltage (Collector open) Collector current Rating Unit VCBO 120 120 V VEBO 7 IC -55 to +150 1: Base 2: Collector 3: Emitter M-A1 Package °C Tstg Storage temperature 1 (2.5) mW 150 2 (2.5) mA 400 3 mA 50 Tj Junction temperature 20 PC Collector power ... | Original |
3 pages, |
2SD958 2SD0958 2SB788 2SB0788 2SD0958 abstract |
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| Abstract: Transistors 2SD0958 2SD0958 (2SD958 2SD958) Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788 2SB788) Unit: mm 2.5�1 (1.0) (1.5) R 0.9 1.0�1 2.4�2 4.1�2 2.0�2 R 0.7 4.5�1 Features � High collector-emitter voltage (Base open) VCEO � Low noise voltage NV � M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (1.0) (1.5) 3.5�1 (0.4) 6.9�1 (0.85) Absolute ... | Original |
3 pages, |
2SD958 2SD0958 2SB788 2SB0788 2SD0958 abstract |
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| Abstract: Transistor 2SD0958 2SD0958 (2SD958 2SD958) Silicon NPN epitaxial planer type For high breakdown voltage and low-noise amplification Complementary to 2SB0788 (2SB788 2SB788) Unit: mm 6.9�1 1.0 0.85 4.5�1 0.55�1 0.45�05 (Ta=25癈) Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Peak collector current ICP 50 mA Collector current IC 20 mA ... | Original |
3 pages, |
2SD958 2SD0958 2SB788 2SB0788 2SD0958 abstract |
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| Abstract: Transistors 2SD0958 2SD0958 (2SD958 2SD958) Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788 2SB788) Unit: mm 2.5�1 (1.0) (1.0) (1.5) (1.5) R 0.9 2.4�2 (0.85) Absolute Maximum Ratings Ta = 25癈 Rating Unit VCBO 120 V Collector-emitter voltage (Base open) VCEO 120 V Emitter-base voltage (Collector open) VEBO 7 1.25�05 Symbol 0.45�05 V Collector current ea s ht e v tp is :// it pa fo na llo so ... | Original |
3 pages, |
2SD958 2SD0958 2SB788 2SB0788 2SD0958 abstract |
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| Abstract: Transistor 2SD0958 2SD0958 (2SD958 2SD958) Silicon NPN epitaxial planer type For high breakdown voltage and low-noise amplification Complementary to 2SB0788 (2SB788 2SB788) Unit: mm 6.9�1 1.0 0.85 4.5�1 0.55�1 0.45�05 (Ta=25癈) Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Peak collector current ICP 50 mA Collector current IC 20 mA ... | Original |
3 pages, |
2SD958 2SD0958 2SB788 2SB0788 2SD0958 abstract |
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| Abstract: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is i ... | Original |
124 pages, |
PANASONIC TRANSISTOR 2SC6073 datasheet abstract |
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| Abstract: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intende ... | Original |
140 pages, |
2PG003 smd code ml6 2pg001 2SD2363 2PG009 datasheet abstract |
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