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Part : JA2S-A8-BB-01-D-A-2,5-10 Supplier : Eaton Electrical Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
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Part : JA2S-A8-LB-01-D-A-20-10 Supplier : Eaton Electrical Manufacturer : Newark element14 Stock : 2 Best Price : $20.00 Price Each : $34.62
Part : 2SA812A-T1B-AT Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 9,411,000 Best Price : $0.10 Price Each : $0.13
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Part : 2SA812-T1B-A Supplier : Renesas Electronics Manufacturer : America II Electronics Stock : 23,300 Best Price : - Price Each : -
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Part : 2SA800 Supplier : NEC Manufacturer : Bristol Electronics Stock : 2,860 Best Price : $0.99 Price Each : $3.00
Part : 2SA812-T1B Supplier : NEC Manufacturer : Bristol Electronics Stock : 3,000 Best Price : - Price Each : -
Part : 2SA812LM6 Supplier : NEC Manufacturer : Bristol Electronics Stock : 145 Best Price : $0.60 Price Each : $1.8750
Part : 2SA812M4A Supplier : NEC Manufacturer : Bristol Electronics Stock : 640 Best Price : $0.63 Price Each : $1.80
Part : 2SA812M6A Supplier : NEC Manufacturer : Bristol Electronics Stock : 180 Best Price : $0.60 Price Each : $1.8750
Part : 2SA812M6B Supplier : NEC Manufacturer : Bristol Electronics Stock : 100 Best Price : $1.1250 Price Each : $1.80
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Part : 2SA811A-C17(T1B-A) Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 2,400 Best Price : $0.92 Price Each : $1.12
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Part : 2SA811A-T1B-A Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 2,625 Best Price : $0.0957 Price Each : $0.1710
Part : 2SA812-M4(T1B-A) Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 6,300 Best Price : $0.7980 Price Each : $0.9760
Part : 2SA812-M5(T1B-A) Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 3,300 Best Price : $0.7980 Price Each : $0.9760
Part : 2SA812-M6(T1B-A) Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 3,600 Best Price : $0.7980 Price Each : $0.9760
Part : 2SA812-M7(T1B-A) Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 6,250 Best Price : $0.7980 Price Each : $0.9760
Part : JA2S-A8-LB-01-D-A-20-10 Supplier : Eaton Electrical Manufacturer : element14 Asia-Pacific Stock : 2 Best Price : $28.91 Price Each : $33.44
Part : JA2S-A8-LB-01-D-A-20-10 Supplier : Eaton Electrical Manufacturer : Farnell element14 Stock : 2 Best Price : £23.01 Price Each : £30.40
Part : AM2S-A8-A-10-10H Supplier : Eaton Electrical Manufacturer : Master Electronics Stock : 6 Best Price : - Price Each : -
Part : AM2S-A8-A-20-10E Supplier : Eaton Electrical Manufacturer : Master Electronics Stock : 1 Best Price : $95.83 Price Each : $106.79
Part : AM2S-A8-A-40-30H Supplier : Eaton Electrical Manufacturer : Master Electronics Stock : 9 Best Price : - Price Each : -
Part : AM2S-A8-A-5-10E Supplier : Eaton Electrical Manufacturer : Master Electronics Stock : 28 Best Price : $49.78 Price Each : $51.33
Part : AM2S-A8-A-50-10 Supplier : Eaton Electrical Manufacturer : Master Electronics Stock : 24 Best Price : $49.78 Price Each : $51.33
Part : AM2S-A8-A-50-10E Supplier : Eaton Electrical Manufacturer : Master Electronics Stock : 50 Best Price : $49.78 Price Each : $51.33
Part : JA2S-A8-A-10-20 Supplier : Eaton Electrical Manufacturer : Master Electronics Stock : 26 Best Price : $31.96 Price Each : $96.84
Part : UP2SA-820-R Supplier : EATON Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : UP2SA-8R2-R Supplier : EATON Manufacturer : Sager Stock : - Best Price : - Price Each : -
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2SA836 Datasheet

Part Manufacturer Description PDF Type
2SA836 Hitachi Semiconductor Silicon PNP Epitaxial Original
2SA836 Renesas Technology Silicon PNP Epitaxial Original
2SA836 Renesas Technology Silicon PNP Epitaxial Original
2SA836 Renesas Technology Silicon PNP Epitaxial Original
2SA836 Transys Electronics Plastic-Encapsulated Transistors Original
2SA836 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan
2SA836 N/A Transistor Substitution Data Book 1993 Scan
2SA836 N/A The Japanese Transistor Manual 1981 Scan
2SA836 N/A Scan
2SA836 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SA836 N/A Shortform Transistor Datasheet Guide Scan
2SA836 N/A The Transistor Manual (Japanese) 1993 Scan
2SA836 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SA836 N/A Basic Transistor and Cross Reference Specification Scan
2SA836 N/A Transistor Shortform Datasheet & Cross References Scan
2SA836 N/A Japanese Transistor Cross References (2S) Scan
2SA836 N/A Cross Reference Datasheet Scan
2SA836C Hitachi Semiconductor Silicon PNP Epitaxial Transistor Original
2SA836C Renesas Technology Silicon PNP Epitaxial Original
2SA836C N/A Shortform Transistor PDF Datasheet Scan
Showing first 20 results.

2SA836

Catalog Datasheet MFG & Type PDF Document Tags

2SA1015

Abstract: 2sa798 ) . 0 4 2SA1339 2SA1015 2SA 782- â¡ â'"A 2SA1016 2SA1015 2SA675 2SA836 2SA1309A 2SA785 2SA 783 ^ O-A 2SA1015 2SA733 2SA836 2SA1309A 2SA937 2SA 784 â¡ -A 2SA1177 2SA1015 2SA733 2SA836 2SA1309A 2SA937 2SA 785 â¡â'"A 2SA1016 2SA1015 2SA675 2SA836 2SA1309A 2SA999 2SA 786 â¡ â'"A 2SA930 2SA1015 2SA733 2SA836 2SA1309A 2SA937 2SA 787 a-A 2SA1177 2SA1015 2SA733 2SA836 2SA1309A 2SA937 2SA 788 â¡ â'"A 2SA929 2SA990 2SA836 2SA937 2SA 789 â¡ â'"A 2SA930 2SA1015 2SA990 2SA836 2SA1018
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OCR Scan
2SB631 2SA1207 2SB814 2SA968 2sa798 2sb631 hitachi NEC k 787 2sa790 2SA743 2SA699A 2SB1064 2SA562TM 2SA719

2SA934

Abstract: 2SA970 m s Type No. tt « Manuf. s m SANYO Ã" S TOSHIBA B a NEC S iL HITACHI « ± a FUJITSU fö t MATSUSHITA H « MITSUBISHI â¡ â'" A ROHM 2SA 671â'"' 0 ÌL 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2SA 672 a a 2SA1782 2SA1015 2SA953 2SA836 2SA720 2SA854 2SA 673' B S; 2SA984 2SA950 2SA719 2SA1399 2SA854 2SA 673A B ÃZ 2SA817A 2SA 673AK B iL 2SA817A 2SA 675. B B 2SA1016 2SA970 , 2SA 701 = » 2SA930 . 2SA970 2SA733 2SA836 2SA11ZT 2SA93S 2SA 702 â'" h $ 2SA970 2SA733 2SA836
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OCR Scan
2SA934 2SA817 2SA638 2SA705 2sa952 2SA984 sanyo 2sa933 2SA77800 2SA847A 2SA1039 2SA952 2SA933 2SA499

2SA836

Abstract: Hitachi DSA0076 2SA836 Silicon PNP Epitaxial ADE-208-316 (Z) 1st. Edition Mar. 2001 Application Low , 2SA836 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base , - 0.5 1 dB I C = ­0.1mA, Rg = 10 k f = 1 kHz Note: 1. The 2SA836 is grouped by hFE as follows. C D 160 to 320 250 to 500 2 VCE = ­12 V, IC = ­2 mA 2SA836 , ­10 µ ­100 µ ­1 m ­10 m Collector Current IC (A) ­50 m 3 2SA836 Contours of Constant
Hitachi Semiconductor
Original
Hitachi DSA0076 D-85622

2SA83

Abstract: 2SA836 products contained therein. 2SA836 Silicon PNP Epitaxial ADE-208-316 (Z) 1st. Edition Mar. 2001 , 2 1 2SA836 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit , - 0.5 1 dB I C = ­0.1mA, Rg = 10 k f = 1 kHz Note: 1. The 2SA836 is grouped by hFE as follows. C D 160 to 320 250 to 500 2 VCE = ­12 V, IC = ­2 mA 2SA836 , ­10 µ ­100 µ ­1 m ­10 m Collector Current IC (A) ­50 m 3 2SA836 Contours of Constant
Hitachi Semiconductor
Original
2SA83

2SA836

Abstract: HITACHI 2SA836 SILICON PNP EPITAXIAL LOW FREQUENCY LOW NOISE AMPLIFIER S.2 Max 4.2 Max Û.S Max 1. Minuter 2. Cullccior 3. Buse (Dimensions in mm) (JEDEC TO-92) I ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Item Symbol 2SA836 Unit Collector io base voltage Vcbo -55 V Colleclor lo emitter voltage VC£ 0 -55 V Emitter to base voltage Veeo -5 V Colleclor current Ic -100 niA Emitter current II , 2SA836 is grouped by hit as foliowj. c D 160 io 320 25« io XXI HITACHI 2SA836 TYPICAL OUTPUT
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OCR Scan

2SA836

Abstract: Hitachi DSA002754 2SA836 Silicon PNP Epitaxial Application Low frequency low noise amplifier Outline 2SA836 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature , , I C = ­0.1mA, Rg = 10 k f = 10 Hz f = 1 kHz Note: C 1. The 2SA836 is grouped by hFE as follows. D 250 to 500 160 to 320 2 2SA836 3 2SA836 4 2SA836 When using this
Hitachi
Original
Hitachi DSA002754

2SA1015

Abstract: 2SB1041 S 2SA1015 2SA 539c s a 2SA1015 2SA673A 2SA1309A 2SA854 2SA 542 â'" a m 2SA1015 2SA836 2SA1309A 2SA933 2SA 543 P m 2SA1015 2SA836 2SA1127 2SA933 2SA 544 c a a 2SA984 2SA673AÃ
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OCR Scan
2SA1358 2SA1096 2SB1086 2SA748 2SA673 2SA935 2SB1041 2SA1636 2SA1755

2s8698

Abstract: 2SA634A n 2SA970 2SA821 2SA 640 x a * 2SA929 2SA970 2SA836 2SA1039 2SA 641 0 « 2SA499 2SA844 , fö T 2SA836 2SA 646 = « 2SB1314 2SB1086 2SA 646 3 * 2SB1086 2SA 647 z  , 2SB849 2SA 666 . $ T 2SA930 2SA1015 2SA990 2SA836 2SA1127 2SA933 2SA 668 H m 2SA970 2SA638
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OCR Scan
2SA715 2SA699 2SB1187 2SB686 2s8698 2SA634A 2S8834 2SA699A matsushita 2SB632 2SA473 2SB824 2SB834

s2v 92

Abstract: H ITACHI 2SA836 SILICON PNP EPITAXIAL LOW FREQUENCY LOW NOISE AMPLIFIER ¡>2 Max 4.2 Max 0 5 Max t . b n ii ic r 2. CoJJector XB a*c il» mu») {JE0EC TO-92) ABSOLUTE MAXIMUM RATINGS (Ta=23»C) Item Collector !o base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature , t>> hnb si foHowv 1 i IM! c jo H ITACH I 2SA836 TYPICAL OUTPUT CHARACTERISTICS
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OCR Scan
s2v 92 2SAS36

transistor 2SA836

Abstract: 2SA836 2SA836 2SA836 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.2 W (Tamb=25) 2. COLLECTOR Collector current ICM: -0.1 A Collector-base voltage V V(BR)CBO : -55 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -10µA , IE
WEJ Electronic
Original
transistor 2SA836 VCE-12

2SA836

Abstract: 2SA836 Silicon PNP Epitaxial HITACHI Application Low frequency low noise amplifier Outline TO-92 (1) I 1. Emitter 2. Collector 3. Base 3 2 1 97 2SA836 Absolute Maximum Ratings , , PF dB dB NF f = 10 H z i = 1 kH z - Note: Rg = 10 k ß 1. The 2SA836 is grouped by hF E as follows. C 160 to 320 D 250 to 500 98 HITACHI 2SA836 Typical Output , Voltage VBE (V) - 10 fi -1 0 0 (i -1 m -1 0 m Collector Current lc (A) -5 0 m HITACHI 99 2SA836
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OCR Scan
Abstract: Information Part Name 2SA836CTZ 2SA836DTZ 2500 Quantity Shipping Container Hold Box, Radial Taping Note , 2SA836 Silicon PNP Epitaxial REJ03G0629-0200 (Previous ADE-208-316) Rev.2.00 Aug , 10, 2005 page 1 of 5 2SA836 Electrical Characteristics (Ta = 25°C) Item Collector to base , f = 1 kHz Note: 1. The 2SA836 is grouped by hFE as follows. C D 160 to 320 250 to 500 Rev.2.00 Aug 10, 2005 page 2 of 5 2SA836 Main Characteristics Maximum Collector Dissipation Curve Renesas Technology
Original
PRSS0003DA-A

transistor 2SA836

Abstract: Hitachi DSA00396 2SA836 Silicon PNP Epitaxial Application Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA836 Absolute Maximum Ratings (Ta = 25 , , Rg = 10 k f = 1 kHz Note: 1. The 2SA836 is grouped by hFE as follows. C D 160 to 320 250 to 500 2 VCE = ­12 V, IC = ­2 mA 2SA836 Typical Output Characteristics ­10 , Current IC (A) ­50 m 3 2SA836 Contours of Constant Noise Figure (1) 100 k 50 Signal source
Hitachi Semiconductor
Original
Hitachi DSA00396

2SA985 NEC

Abstract: 2s8834 * » * * * * * * ♦ * * ♦ * t * * * * * * * * ♦ * * S â'¬ Type No. tt « Manuf. = ft SANYO X S TOSHIBA B m NEC B îl HITACHI * ± a FUJITSU K T MATSUSHITA H S MITSUBISHI â¡ â'" A ROHM 2SB 153 0 îl 2SB561 2SB 154 S îl 2SB561 2SB 155 h îl 2SB561 2SB 176 ' fâ T 2SB56 2SB 302 0 îl 2SA836 2SB 370 a îl 2SB562 2SB 370A 0 îl 2SB562 2SB , ) 2SB1369 2SB 443 0 îl 2SA836 2SB 444 0 îl 2SA836 2SB 492 = ft 2SC2270 2SB 496 0
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OCR Scan
2SB508 2SB537 2SA985 NEC toshiba 2sb555 2sb443 B 504a ZSB834 2SB566 ZSB566 2SB566AO 2SB941A

2SA836

Abstract: 2SA836CTZ 2SA836CTZ 2SA836DTZ Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some , 2SA836 Silicon PNP Epitaxial REJ03G0629-0200 (Previous ADE-208-316) Rev.2.00 Aug , ­100 100 200 150 ­55 to +150 Unit V V V mA mA mW °C °C 2SA836 Electrical , 500 ­0.5 ­0.75 - - 5 1 V nA nA 1. The 2SA836 is grouped by hFE as follows. C D 160 , VCB = ­10 V, IE = 0, f = 1MHz VCE = ­6 V, f = 10 Hz IC = ­0.1mA, Rg = 10 k f = 1 kHz 2SA836
Renesas Technology
Original
SC-43A

2SB737

Abstract: 2SA1015 - IS - a « Type No. tt « Manuf. H SANYO M 2 TOSHIBA b a NEC b iL HITACHI S ± il FUJITSU fö T MATSUSHITA H S MITSUBISHI â¡ â'" a ROHM 2SA 973 J fâ T 2SA1015 2SA988 2SA1030 2SA1127 2SA933 2SA 977 85 T 2SA1209 2SA949 2SA1142 2SB648 2SA 977A fé T 2SA1352 2SA1142 2SA 978 = m 2SA929 2SA990 2SA836 2SA933 2SA 979 X = » 2SA1240 2SA970 2SA 980 â'¢y-VÃTV 2SB816 2SB849 , '¢ 0 a 2SA929 2SA1015 2SA836 2SA1127 2SA847A 2SA933 2SA 99! 0 a 2SA1783 2SA1015 2SA1083 2SA1127
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OCR Scan
2SB737 2SA991 2SA987 2SA978 2SA933 R 2sa1306 2SA989 9SW49 2SA1306 2SA1011 2SA1111 2SB1085 2SA1306A

2SA798

Abstract: 2SA785 -0.0004 2SA830S O â'"A HG A/SW -40 -0. 3 0. 3 -1 -24 1000 -5 -0. 1 -1.5 -0. 2 -0. 0004 2SA836 Hjà , f=lKHz/Rg=10K TO-920 ECB 2SA836 150 -10 -0. 001 2 NF max 4dB f=5MHz 2SC1359 T0-92JB ECB 2SA838 200
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OCR Scan
2SA720A 2SA732 2SA743A 2SA777 2SA778AK 2SA778K 2sc1567 2SA816
Abstract: Max 1.27 2.54 Ordering Information Part Name 2SA836CTZ 2SA836DTZ Quantity 2500 , developed or manufactured by or for Renesas Electronics. 2SA836 Silicon PNP Epitaxial REJ03G0629 , Storage temperature Tstg â'"55 to +150 ° C Rev.2.00 Aug 10, 2005 page 1 of 5 2SA836 , hFE*1 VCE(sat) VBE fT Cob NF 1. The 2SA836 is grouped by hFE as follows. C D 160 to 320 250 to 500 Rev.2.00 Aug 10, 2005 page 2 of 5 V V MHz pF dB dB Test conditions 2SA836 Renesas Technology
Original

2SA934

Abstract: 2sa933 2SA1005 2SA836 2SA1309A 2SA999 2SA933 2SA 72 5 â'ž. H m 2SA929 2SA1015 2SA990 2SA1031 2SA1127 2SA999L , 2SA988 2SA1018 2SA 750 â  b c 2SA929 2SA836 2SA1309A 2SA1039 2SA 751 fö t 2SB544 2SB548
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OCR Scan
2SA1032 2SA1115 2sa726 2SA1768 2SA830 2SB946 2SB1142 2SB772 2SB1009

2SA836

Abstract: 2SA836CTZ 2SA836CTZ 2SA836DTZ Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some , . 2SA836 Silicon PNP Epitaxial REJ03G0629-0200 (Previous ADE-208-316) Rev.2.00 Aug , ­100 100 200 150 ­55 to +150 Unit V V V mA mA mW °C °C 2SA836 Electrical , 500 ­0.5 ­0.75 - - 5 1 V nA nA 1. The 2SA836 is grouped by hFE as follows. C D 160 , VCB = ­10 V, IE = 0, f = 1MHz VCE = ­6 V, f = 10 Hz IC = ­0.1mA, Rg = 10 k f = 1 kHz 2SA836
Renesas Technology
Original

2SA1015

Abstract: 2SA733 2SAS36 2SA1127 2SA1039 2SA 842 - JK S 2SA929 2SA970 2SA990 2SA836 2SA1127 2SA933 2SA 843 « T
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OCR Scan
2SA1284 2SB546 2SA823 2SA-1015 2SA1015 0 2SB647 2SA794 2SA1145 2SB717 2SB1264
Showing first 20 results.