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2SA671 Datasheet

Part Manufacturer Description PDF Type
2SA671 Wing Shing Computer Components PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) Original
2SA671 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan
2SA671 Micro Electronics Semiconductor Device Data Book Scan
2SA671 Mospec POWER TRANSISTORS(3.0A,50V,25W) Scan
2SA671 Mospec PNP Silicon Power Transistor Scan
2SA671 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2SA671 N/A Semiconductor Master Cross Reference Guide Scan
2SA671 N/A Transistor Substitution Data Book 1993 Scan
2SA671 N/A The Japanese Transistor Manual 1981 Scan
2SA671 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SA671 N/A Shortform Transistor Datasheet Guide Scan
2SA671 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SA671 N/A Basic Transistor and Cross Reference Specification Scan
2SA671 N/A Transistor Shortform Datasheet & Cross References Scan
2SA671 N/A Basic Transistor and Cross Reference Specification Scan
2SA671 N/A Transistor Replacements Scan
2SA671 N/A Transistor Replacements Scan
2SA671 N/A Shortform Transistor PDF Datasheet Scan
2SA671 N/A Japanese Transistor Cross References (2S) Scan
2SA671 N/A Cross Reference Datasheet Scan
Showing first 20 results.

2SA671

Catalog Datasheet MFG & Type PDF Document Tags

2sa671

Abstract: 2SA670 SavantIC Semiconductor Product Specification 2SA671 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC1061 ·Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS ·Designed for use in low frequency power amplifier applications , 2SA671 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SA671 -
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Original
2sa671 equivalent 2SC1061 PNP

2SA670

Abstract: 2SA671 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA671 DESCRIPTION â'¢ With T0220 package â'¢ Complement to type 2SC1061 â'¢ Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS â'¢ Designed for use in low frequency power amplifier applications PINNING , 1/3 AÃK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA671 , Product Specification Silicon PNP Power Transistors 2SA671 PACKAGE OUTLINE E-mail :aoksemic@yahoo. com.cn
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OCR Scan

2SA671

Abstract: 2SC1061 JMnic Product Specification 2SA671 Silicon PNP Power Transistors DESCRIPTION With TO-220 package Complement to type 2SC1061 Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 , PARAMETER Thermal resistance from junction to case JMnic Product Specification 2SA671 Silicon , . MAX UNIT 320 MHz JMnic Product Specification 2SA671 Silicon PNP Power
JMnic
Original
Abstract: J.S.11S.U z)ni-C,onaiLct:oi , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA671 Silicon PNP Power Transistor DESCRIPTION â'¢ Low Collector Saturation Voltage: VCE(SUS)= -1.0V(Max)@ lc= -2.0A â'¢ DC Current Gain : hFE= 35-320® lc= -0.5A â'¢ Complement to Type 2SC1061 PIN 1.BASE J. COLLECTOR TO-220C package , current before placing orders. Qualify Semi-Conductors Silicon PNP Power Transistor 2SA671 New Jersey Semiconductor
Original

2sc1060

Abstract: 2SC1061 V y =J > NPN HSîÃtSB 2SA670, 2SA671 £ 3 > * > $ V SILICON NPN TRIPLE DIFFUSED_ LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SA670 and 2SA671 2SC1060 2SC1061 -11.27 ^3.0max. 1. ^ - * .'Base 2. : Collector (7 7 > £/) (Flange) 3. x J -y ^ : Emitter (Dimensions in mm) 03.6+0. t 1.27 3.0 max. (JEDEC TO-220AA) (JEDEC T0-220AB) «g^g^SÃS ABSOLUTE MAXIMUM RATINGS (To=25°C ) m i Symbol 2SC1060, 2SC1061 Unit u U 9 ? - - x H S Vcfio 50 V V 7 ? * i ì â'¢/ 9 1 J VcÂ
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OCR Scan
2SCI061 JE1A to220aa TO-220-AA TO-220AA TC-25X VCB-20V

2SC1061

Abstract: 2SA671 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA671 DESCRIPTION ·Low Collector Saturation Voltage: VCE(SUS)= -1.0V(Max)@ IC= -2.0A ·DC Current Gain : hFE= 35-320@ IC= -0.5A ·Complement to Type 2SC1061 APPLICATIONS ·Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO , isc Silicon PNP Power Transistor 2SA671 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise
INCHANGE Semiconductor
Original
2sA671 transistor Transistor 2sC1061 2sC1061 transistor 2sc1061 equivalent

2SC1061 f

Abstract: , One. J. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA671 Silicon PNP Power Transistor DESCRIPTION â'¢ Low Collector Saturation Voltage: VCE(susr -1.0V(Max)@ lc= -2.0A â'¢ DC Current Gain : hFE= 35-320® lc= -0.5A â'¢ Complement to Type 2SC1061 PIN 1.BASE 1. COLLECTOR 3. EMITTER TO-220C package , orders. Qualify Semi-Conductors Silicon PNP Power Transistor 2SA671 ELECTRICAL
New Jersey Semiconductor
Original
2SC1061 f

60B120

Abstract: 2SA671 ¿Z&MOSPEC PNP SILICON POWER TRANSISTORS .designed for use in iow frequency power amplifier applications FEATURES: * Low Collector-Emitter Saturation Voltage VCE(satf 10V(Max> @iC=2 0A,lB=0.2A * DC Current Gain hFE= 35-320@lc= 0.5A * Complememtary to NPN 2SC1061 MAXIMUM RATINGS Characteristic Symbol 2SA671 Unit Collector-Emitter Voltage vCEO 50 V Collector-Base Voltage VCBO 50 V Emitter-Base Voltage , \ °0 25 50 75 100 125 150 Tc , TEMPERATURE^ C) PNP 2SA671 3.0 AMPERE SILICON POWER TRANASISTORS
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OCR Scan
60B120

2SC1061

Abstract: 2SA671 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA671 DESCRIPTION ·Low Collector Saturation Voltage: VCE(SUS)= -1.0V(Max)@ IC= -2.0A ·DC Current Gain : hFE= 35-320@ IC= -0.5A ·Complement to Type 2SC1061 APPLICATIONS ·Designed for use in low frequency power amplifier applications. .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO , Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA671 ELECTRICAL
INCHANGE Semiconductor
Original

2SC1061

Abstract: 2SC1060 Inchange Semiconductor Product Specification 2SC1061 Silicon NPN Power Transistors DESCRIPTION With TO-220 package Low saturation voltage Complement to type 2SA671 Note: type 2SC1060 with short pin APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25) SYMBOL PARAMETER TOR UC OND CONDITIONS EMIC VALUE UNIT
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Original
2Sc1060 equivalent 2SC1061 B 2sc1061 datasheet

2SC1061

Abstract: 2SA671 2SA671 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SC1061 ABSOLUTE MAXIMUM RATINGS (TA=25) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25) Junction Temperature Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg -50 -50 -5 -3 25 150 -50~150 V V V A W ELECTRICAL CHARACTERISTICS (TA=25) Characteristic
Wing Shing Computer Components
Original

2SC1061

Abstract: 2sc1060 SavantIC Semiconductor Product Specification 2SC1061 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Low saturation voltage ·Complement to type 2SA671 ·Note: type 2SC1060 with short pin APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25? ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage
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Original
2SC1061 C 2SC1061-C

2SA671

Abstract: 2SD526 2SD526 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SA671 ABSOLUTE MAXIMUM RATINGS (TA=25) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25) Junction Temperature Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg 80 80 5 4 30 150 -50~150 V V V A W ELECTRICAL CHARACTERISTICS (TA=25) Characteristic
Wing Shing Computer Components
Original
transistor 2SD526 NPN 80V 3A

2SC1061

Abstract: 2SC1060 Product Specification www.jmnic.com 2SC1061 Silicon NPN Power Transistors DESCRIPTION With TO-220 package Low saturation voltage Complement to type 2SA671 Note: type 2SC1060 with short pin APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open
JMnic
Original

2SC1061

Abstract: transistor 2SC1061 2SC1061 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SA671 ABSOLUTE MAXIMUM RATINGS (TA=25) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25) Junction Temperature Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg 50 50 7 3 25 150 -50~150 V V V A W ELECTRICAL CHARACTERISTICS (TA=25) Characteristic
Wing Shing Computer Components
Original
2sc1061 npn transistor datasheet 2sc1061 npn transistor

2sb526

Abstract: 2SB529 10 2 3 2SA670 2SC1061 N TO-220 25 3 50 35 320 # 0.1 4 1 2 3 2SA671 2SC1173 N TO-220 10 3 50 40 400
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OCR Scan
2SB513A 2SD366A 2SB514 2SD330 2SB515 2SD331 2sb526 2SB529 2SC789 2SA816 2SD359

2SC789

Abstract: 2sc1060 Power Transistors type no. polarity case maximum ratings min hfe vce(sat) ft min (MHz) complementary type pd IW) 'c (a) V ceo (V) max 'c (a) vce (V) max (V) â c (a) 2SC789 N TO-220 30 4 60 40 240 # 0.5 5 1.5 3 3 2SA489 2SC790 N TO-220 25 3 40 40 240 # 0.5 2 1.4 2 3 2SA490 2SC1060 N TO-220 25 3 50 35 320 # 0.1 4 10 2 3 2SA670 2SC1061 N TO-220 25 3 50 35 320 # 0.1 4 1 2 3 2SA671 2SC1173 N TO-220 10 3 50 40 400 # 0.5 2 0.8 2 10C 2SA473 2SC1626 N TO-220 10 0.75 80 70 240 #
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OCR Scan
TO-220 2sd360 250314 TO220 2SD234 2SB434 2SD235 2SB435 2SD288 2SD289

2sb526

Abstract: 2sc1060 0.1 0.5 0.15 0.5 0.5 0.5 0.5 2SD 476A K 2SA 489 2SA 490 2SA670 2SA671 2SA473 2SA 816 2SB 434 2SB435
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OCR Scan
2SB523 2SD365 2SB566AK 2SD476AK 2SB566A 2SD313 2SD314 2SD476A

2SC1061

Abstract: transistor 2SC1061 /&MOSPEC NPN SILICON POWER TRANSISTORS .designed for use in low frequency power amplifier applications FEATURES: * Low Collector-Emitter Saturation Voltage vCE(satf 10V(Max) @Ic=2.0A,Ib=0.2A * DC Current Gain hFE= 35-320@lc= 0.5A * Complememtary to PNP 2SA671 MAXIMUM RATINGS Characteristic Symbol 2SC1061 Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage vCBO 50 V Emitter-Base Voltage vEBO 4.0 V Collector Current - Continuous - Peak 'c 'cm 3.0 8.0 A Base current >B 0.5 A Total Power
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OCR Scan
L50C

2n6125

Abstract: 2N6476 2SA473 2SA490 2SA670 2SA671 2SA816 P P P P P TO-220 TO-220 TO-220 TO-220 TO
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OCR Scan
2n6125 MH8100 MH8106 MH8108 MH8700 MH0810 MH0816
Showing first 20 results.