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Part : 2SA1939-O(Q) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 160 Best Price : $8.14 Price Each : $10.10
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2SA1939 Datasheet

Part Manufacturer Description PDF Type
2SA1939 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-3P(N); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Application Scope: output(35W); Part Number: 2SC5196 Original
2SA1939 Wing Shing Computer Components PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) Original
2SA1939 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SA1939 N/A Japanese Transistor Cross References (2S) Scan
2SA1939 Toshiba TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Scan
2SA1939 Toshiba Silicon PNP transistor for power amplifier applications. Recommended for 40W high fidelity audio frequency amplifier output stage Scan
2SA1939O Toshiba Silicon PNP Triple Diffused Transistor Scan
2SA1939R Toshiba Silicon PNP Triple Diffused Transistor Scan

2SA1939

Catalog Datasheet MFG & Type PDF Document Tags

2SA1939

Abstract: 2SC5196 AÃK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA1939 DESCRIPTION â'¢With TO-3P(l) packagc â'¢ Complement to type 2SC5196 APPLICATIONS â'¢ Power amplifier applications â , Product Specification Silicon PNP Power Transistors 2SA1939 CHARACTERISTICS Tj=25T? unless otherwise , 3/4 AÃK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA1939 PACKAGE , : aoksemic@msn.coin 3/4 AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA1939 COLLECTOR
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2SA1939

Abstract: 2SC5196 TO SH IBA TOSHIBA TRANSISTOR 2SA1939 POWER AMPLIFIER APPLICATIONS 2SA1939 SYMBOL v CBO VCEO Ve b o ic :B PC SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. 03.2 ±0.2 · · Complementary to 2SC5196 Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. RATING -8 0 -8 , 2001 05-24 - TO SH IBA 2SA1939 IC - VCE IC - Vre COLLECTOR-EMITTER VOLTAGE VCE (V , ) 2 2001 05-24 - TO SH IBA 2SA1939 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA
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T10C 2-16C1A

a1939

Abstract: Toshiba transistor A1939 2SA1939 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1939 Power Amplifier Applications Unit: mm · Complementary to 2SC5196 · Recommend for 40-W high-fidelity audio , , O: 80 to 160 1 2004-07-07 2SA1939 Marking TOSHIBA A1939 Characteristics , )-free finish. 2 2004-07-07 2SA1939 IC ­ VCE IC ­ VBE -10 -10 Common emitter IC , 2004-07-07 2SA1939 RESTRICTIONS ON PRODUCT USE 030619EAA · The information contained herein is
Toshiba
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Toshiba transistor A1939

Toshiba transistor A1939

Abstract: 2SA1939 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1939 Power Amplifier Applications Unit: mm · · Complementary to 2SC5196 Recommend for 40-W high-fidelity audio frequency amplifier , 2SA1939 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off , 2SA1939 IC ­ VCE -10 Common emitter Tc = 25°C -8 -300 -8 -10 IC ­ VBE IC (A) -250 -200 -150 , Collector-emitter voltage VCE (V) 3 2006-11-09 2SA1939 RESTRICTIONS ON PRODUCT USE · The
Toshiba
Original

2SA1939

Abstract: 2SC5196 TO SH IBA TOSHIBA TRANSISTOR 2SA1939 POWER AMPLIFIER APPLICATIONS 2SA1939 SYMBOL v CBO VCEO Ve b o ic :B PC SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. 03.2 ±0.2 · · Complementary to 2SC5196 Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. RATING -8 0 -8 , 2001 10-29 - TO SH IBA 2SA1939 IC - VCE IC - Vre COLLECTOR-EMITTER VOLTAGE VCE (V , ) 2 2001 10-29 - TO SH IBA 2SA1939 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA
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2SA1939

Abstract: 2SC5196 JMnic Product Specification 2SA1939 Silicon PNP Power Transistors DESCRIPTION With TO-3P(I) package Complement to type 2SC5196 APPLICATIONS Power amplifier applications Recommend , Specification 2SA1939 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified , Product Specification 2SA1939 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic 2SA1939 Silicon PNP Power Transistors 4 JMnic
JMnic
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2SA1939

Abstract: 2SC5196 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1939 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -2.0V(Min) @IC= -5A ·Good Linearity of hFE ·Complement to Type 2SC5196 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage applications .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta , INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1939 ELECTRICAL CHARACTERISTICS TC
INCHANGE Semiconductor
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2SC519

Toshiba transistor A1939

Abstract: a1939 2SA1939 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1939 Power Amplifier Applications Unit: mm · Complementary to 2SC5196 · Recommend for 40-W high-fidelity audio , , etc). 1 2006-11-09 2SA1939 Electrical Characteristics (Tc = 25°C) Characteristics , 2006-11-09 2SA1939 IC ­ VCE IC ­ VBE -10 -10 Common emitter (A) -300 -250 -200 , Collector-emitter voltage -300 VCE (V) 3 2006-11-09 2SA1939 RESTRICTIONS ON PRODUCT USE
Toshiba
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40w amplifier

2SC5196

Abstract: 2SA1939 SavantIC Semiconductor Product Specification 2SA1939 Silicon PNP Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5196 APPLICATIONS ·Power amplifier applications , Product Specification 2SA1939 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless , PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SA1939 SavantIC Semiconductor Product Specification 2SA1939 Silicon PNP Power Transistors 4 -
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2SA1939

Abstract: 2SC5196 Inchange Semiconductor Product Specification 2SA1939 Silicon PNP Power Transistors DESCRIPTION With TO-3P(I) package Complement to type 2SC5196 APPLICATIONS Power amplifier applications , 2SA1939 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , hFE-1 classifications MIN Inchange Semiconductor Product Specification 2SA1939 Silicon , .2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SA1939 Silicon PNP
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2SA1939

Abstract: 2SC5196 TO SHIBA TOSHIBA TRANSISTOR 2SA1939 POWER AMPLIFIER APPLICATIONS 2SA1939 SYMBOL v CBO VCEO vebo SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 M A X . 0 3 .2 ± 0 .2 · · Complementary to 2SC5196 Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. RATING -8 0 -8 0 -5 -6 - % 2 ,0± 0.3 + 0.3 1 . 0 - 0 .2 5 5.45± 0.2 5.45± 0.2 MAXIMUM RATINGS (Ta = 25 , je ct t o c h a n g e w it h o u t n otice. 0 0 1997 02-03 1/2 - TO SHIBA 2SA1939
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Abstract: J. , L)nc. C/ TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 2SA1939 Silicon PNP Power Transistor DESCRIPTION â'¢ Low Collector Saturation Voltage- I1 : VCE(«t)= -2.0V(Min) @lc= -5A â'¢ Good Linearity of MFE â'¢ Complement to Type 2SC51 96 r APPLICATIONS â'¢ Power amplifier applications â , 2SA1939 Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25'C unless otherwise specified New Jersey Semiconductor
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2SA1939

Abstract: 2SC5196 TOSHIBA TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS 2SA1939 2SA1939 SYMBOL VÇBO VCEO ic JB PC vebo SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm l&^MAX^ 03.2 ±0.2 · · Complementary to 2SC5196 Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. RATING -8 0 -8 0 -5 -6 - M A XIM U M RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage , Service CopyRight 2003 TOSHIBA 2SA1939 IC - VCE IC - VRE COLLECTOR-EMITTER VOLTAGE V cE (V
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Abstract: TOSHIBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SA1939 Unit in mm 15.9 MAX. 03.2 ± 0.2 PO W ER AM PLIFIER APPLICATIONS Complementary to 2SC5196 Recommend for 40W High Fidelity Audio Frequency Amplifier O n fc rm t S fa c rp É0 M A X IM U M RATINGS (Ta = 25°C) JEDEC EIAJ TOSHIBA 2-16C1A Weight : 4.7g(Typ.) ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL TEST CONDITION , TOSHIBA 2SA1939 lC - VCE IC - VßE C O LLEC T O R - EM IT T ER V O LT A G E V ç ;E (V -
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2SA1939

Abstract: 2SC5196 2SA1939 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! High Current Capability ! High Power Dissipation ! Complementary to 2SC5196 ABSOLUTE MAXIMUM RATING (Ta=25°c) c Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg -120 -80 -6 -6 60 150 -55~150
Wing Shing Computer Components
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Abstract: 2SA1939 T O SH IB A 2 S A 1 939 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 M A X ^ . â'¢ â'¢ 03.2 ± 0 .2 Complementary to 2SC5196 Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage , e w i t h o u t n o tic e . 1997-02-03 1/2 2SA1939 T O SH IB A IC - VCE IC - -
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Abstract: SILICON NPN TRIPLE DIFFUSED TYPE 2SC5196 U nit in mm 15.9MftX. 03.2 t 0.2 PO W ER A M PLIFIER APPLIC ATIO N S. · · Complementary to 2SA1939 Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. SYMBOL VCBO VCEO Ve b o !C Iß PC Tj Tstg M A X IM U M RATINGS -
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2SC5196

Abstract: Audio Output Transistor Amplifier isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5196 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 2.0V(Min) @IC= 5A ·Good Linearity of hFE ·Complement to Type 2SA1939 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage applications .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER scs .i VALUE ww w VCBO Collector-Base Voltage VCEO
INCHANGE Semiconductor
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Audio Output Transistor Amplifier

2SC5196

Abstract: 2SA1939 SavantIC Semiconductor Product Specification 2SC5196 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SA1939 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3P(I) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT
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2SA1939

Abstract: 2SC5196 TOSHIBA TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS 2SC5196 2SC5196 SYMBOL v CBO VCEO RATING 80 80 5 6 0.6 60 150 -5 5 -1 5 0 SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 M A X. '- 03.2 ±0.2 · Complementary to 2SA1939 · Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS (Ta = 25°C) % UNIT V V V vebo A ic A lB 1. BASE W PC 2. COLLECTOR (HEAT SINK) 3. EMITTER °C Tj °C JEDEC Tstg EIAJ TOSHIBA 2-16C1A Weight : 4.7g(Typ.) ELECTRICAL
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961001EAA2
Abstract: TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5196 2 POWER AMPLIFIER APPLICATIONS S C 5 1 9 6 15.9 MAX. Unit in mm 03.2 ± 0.2 Complementary to 2SA1939 Recommend for 40W High Fidelity Audio Frequency Amplifier O n fc rm t S fa c rp É0 MAXIMUM RATINGS (Ta = 25°C) UNIT 1 .0 +-00.3 .2 5 V 5.45+0.2 5.45+0.2 V V -3 A A w" 2. COLLECTOR (HEAT SINK) 3. EMITTER °C °C JEDEC EIAJ TOSHIBA 2-16C1A Weight : 4.7g(Typ.) ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL -
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2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2SA1934 2SA1939 2SA1940 2SA1941 2SA1942 2SA1943 2SA1962 2SB553 2SB595 2SB596 2SB673 2SB674 2SB675 2SB677
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2SA1803 2SD2088 S2055N GT10G102 GTI5Q101 GT60M104 2sC5200, 2SA1943, 2sc5198 2sc5039 2SC4532 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012

2SC5196

Abstract: 2SA1939 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5196 2SC5196 POWER AMPLIFIER APPLICATIONS Unit in mm · · Complementary to 2SA1939 Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. SYMBOL v CBO VCEO Ve b o ic Ib Pc Tj Tstg RATING 80 80 5 6 0.6 60 150 -5 5 -1 5 0 UNIT V V V A A W °C °C MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector
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