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Part : 2SA1302 Supplier : Toshiba Manufacturer : basicEparts Stock : 38 Best Price : - Price Each : -
Part : 2SA1302-O Supplier : Toshiba Manufacturer : Chip1Stop Stock : 721 Best Price : $24.50 Price Each : $33.3000
Part : 2SA1302-R Supplier : Toshiba Manufacturer : Chip1Stop Stock : 148 Best Price : $24.50 Price Each : $33.3000
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2SA1302 Datasheet

Part Manufacturer Description PDF Type
2SA1302 Various Russian Datasheets PNP Transistor Original
2SA1302 Wing Shing Computer Components PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) Original
2SA1302 Mospec POWER TRANSISTORS(15A,200V,150W) Scan
2SA1302 Motorola Bipolar Power Transistor Scan
2SA1302 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SA1302 N/A The Transistor Manual (Japanese) 1993 Scan
2SA1302 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SA1302 N/A PNP Transistor Scan
2SA1302 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SA1302 N/A Transistor Shortform Datasheet & Cross References Scan
2SA1302 N/A Japanese Transistor Cross References (2S) Scan
2SA1302 N/A Catalog Scans - Shortform Datasheet Scan
2SA1302 N/A Catalog Scans - Shortform Datasheet Scan
2SA1302F Continental Device India TO-3P Fully Isolated Plastic Package Transistors Scan
2SA1302F Continental Device India Semiconductor Device Data Book 1996 Scan
2SA1302-O N/A Transistor Shortform Datasheet & Cross References Scan
2SA1302O Toshiba TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 15A I(C) | TO-247VAR Scan
2SA1302-R N/A Transistor Shortform Datasheet & Cross References Scan
2SA1302R Toshiba TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 15A I(C) | TO-247VAR Scan

2SA1302

Catalog Datasheet MFG & Type PDF Document Tags

2SA1302

Abstract: 2SC3281 2SA1302 JMnic Product Specification 2SA1302 Silicon PNP Power Transistors DESCRIPTION With TO-3PL package Complement to type 2SC3281 APPLICATIONS Power amplifier applications Recommended for 100W high , Specification 2SA1302 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified , Product Specification 2SA1302 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3 JMnic Product Specification 2SA1302 Silicon PNP
JMnic
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2SC3281 2SA1302

Toshiba 2SA1302

Abstract: 2sa1302 SEMICONDUCTOR TO SHIBA TRANSISTOR TOSHIBA 2SA1302 SILICON PNP TRIPLE DIFFUSED TYPE TECHNICAL DATA (2SA1302) POWER AMPLIFIER APPLICATIONS. Unit in mm 2 0.5 MAX. . 0 3 . 3 ± 0 .2 , used in such equipm ent or applications w ithout prior consultation w ith TOSHIBA. 2SA1302 - 1 1 9 9 , (2SA1302) IC -V C E IC - V b e & H & fd a i c¿ o OS o B 0 -2 -4 -6 -8 , VOLTAGE Vc e 2SA1302 - 2* 1 9 9 4 -5 -1 4 TOSH IBA CORPORATION
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OCR Scan
Toshiba 2SA1302 2SA1302 data 2SA1302 TOSHIBA 2SA1302 transistor Toshiba 2SC3281 power amplifier 2sc3281 2sa1302 TRANSISTOR 2-21F1A

Toshiba 2Sa1302

Abstract: 2SA1302 TOSHIBA DIFFUSED TYPE (2SA1302) POWER AMPLIFIER APPLICATIONS. Unit in mm Complementary to 2SC3281 â'¢ Recommend , applications without prior consultation with TOSHIBA 2SA1302 - 1 1994- 5 - 14 TOSHIBA CORPORATION SEMICONDUCTOR TOSHIBA TECHNICAL DATA 2 S A 1 3 0 2 (2SA1302) IC -VCE -20 -16 -12 0 -2 -4 -6 -8 -10 -12 , VCE
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OCR Scan
toshiba audio power amplifier 2sa1302 2sc3281 toshiba 2SA13 2sc3281 transistor toshiba 2SA13 transistor

2SA1302 TOSHIBA

Abstract: 2SA1302 © T 2SA1302 2SB 1155' fâ T 2SB1371 2SB 1156 ' fé T 2SBÃ372 2SB 1157 fé T , 2SB817 2SB1361 2SB 1161 fé T 2SB817 2SB1373 2SB 1162 - fé T 2SB817 2SA1302 2SB1347 2SB 1163 "" fé T 2SA1302 2 SB1317 2SB 1164 B « 2SB892 2SA1020 2SB946 2SB 1165 / H
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OCR Scan
2SB1267 2SB937A 2SB1165 2SB933 2SB863 2SA1227A SB 1156 mitsubishi 1183 2SB1407 2SB1201 B 1184

2SA1302

Abstract: 3EMN Amplifier Output stage * Complementary to 2SC3281 MAXIMUM RATINGS Characteristic Symbol 2SA1302 Unit , _%h 25 50 75 100 Tc , TEMPERATURE(°C) 125 150 PNP 2SA1302 15 AMPERE POWER TRANASISTOR 200 VOLTS , 3.25 3.65 P 0.55 0.70 2SA1302 PNP ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted , us, Duty Cycle ^ 2.0% * hFE(2) Classification :_ 80 160 55 110 2SA1302 PNP ACTIVE REGION SAFE
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OCR Scan
3EMN 2SC328 175-I 150-S

2SA1302

Abstract: 2SC3281 2SA1302 SavantIC Semiconductor Product Specification 2SA1302 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SC3281 APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 , Semiconductor Product Specification 2SA1302 Silicon PNP Power Transistors CHARACTERISTICS Tj , ) 3 2SA1302 SavantIC Semiconductor Product Specification 2SA1302 Silicon PNP Power
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2sa1302

Abstract: 2SA1302 transistor isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1302 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min) ·Complement to Type 2SC3281 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM , INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1302 ELECTRICAL CHARACTERISTICS TC
INCHANGE Semiconductor
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2SC3281 data sheet 2sc3281 transistor power transistor audio amplifier 100w 2SC32 100W AUDIO AMPLIFIER Audio Output Transistor Amplifier

mg75n2ys40

Abstract: MG15N6ES42 ) 2SA1408 2SA1326 2SA1050 2SA1301 2SA1333 2SA597 2SA1302 2SA656 2SB688 , 2SB688 2SA1051 2SA1302 2SA1378 2SA562TM 2SA657A 2SB688 2SA1051A 2SA1302 2SA1389 2SA1301 2SA658 2SB688 2SA1051B 2SA1302 2SA1427 2SA1428 2SA658A 2SB688 , 2SA817 2SA1094/A 2SA1301 2SA1712 2SA663 2SB686 2SA1095/A 2SA1302 2SA1799 , 2SA1015 2SB321 2SB56 2SB686 2SB756 2SA1302 2SB322 2SB833
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1S1658 mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055

2SA1302

Abstract: 2SC3281 AÃK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA1302 DESCRIPTION â'¢ With TO-3PL package â'¢ Complement to type 2SC3281 APPLICATIONS â'¢ Power amplifier applications â'¢ Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter o , Power Transistors 2SA1302 PACKAGE OUTLINE E-mail: aoksemic@msn.com 3/4 «40 070 'S 00 y â'¢MM 900 ISN1 3 , Semiconductor Product Specification Silicon PNP Power Transistors 2SA1302 -20 -16 -12 £ -8 a j 8 -4
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2SA817A

Abstract: 2SA934 - 30 - g â'¬ Type No. tt « Manuf. SANYO l; S TOSHIBA B m, NEC 0 iL HITACHI a ± « FUJITSU fé T MATSUSHITA H « MITSUBISHI â¡ - A ROHM 2SA 1384 Ã" S 2SA1740 2SA 1385 * a a 2SB1203 2SA1244 2SA 1385Z 5 a 2SB1203 2SA1244ÃLB) 2SA 1386 _ y-y?-y 2SB817 2SA1302 2SB1163 2SA Ã386A â y-y-rv 2SA1302 2SB1163 ¡SA 1387 ^ * 2 2SA1469 2SAH41 2SB94S 2SB1292 2SA 1388 » S 2 2SA1293 2SA1650 2SB945 2SB1294 2SA 1389."' It s 2SB817 2SBU61 2SA 1390 B ÏI
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OCR Scan
2SA817A 2SA1127 2SA934 2SA1498 2SA1164 2SB774 2sa1306 2SA999 2SA1339 2SA1150 2SB1030 2SA854S 2SA1190

b1375

Abstract: 2sk270a 2SA1408 2SA1301 2SA1301 2SA1301 2SA1302 2SA1302 2SA1302 2SA1265N 2SA1301 2SA1302 2SA1357 2SA1360 2SA1265N , 2SA1358 2SB596 2SB1015 2SA1321 2SA1321 _ 2SA1302 2SA1049 2SA562TM 2SA1301 2SA1048 2SB834, B1375 2SB834 , 2SB686 2SA1357 2SB863, A1265N 2SB863, A1265N 2SB688 2SB688 2SB863 2SA1302 2SB679 1133 Type No , -TM 2SC367K 2SC368 2SC368A 2SC369 2SC369G 2SC370 2SC370G 2SC370K 2SB863 2SA1302 2SB1018 2SB753 2SB 1019
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OCR Scan
MG15G1AL2 S-AU15 MG50G2CL1 mg100g1al2 MG100G1AL1 D1052A MG30G1BL1 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790

2SA1302 TOSHIBA

Abstract: 2SA1302 transistor TOSHIBA Discrete Semiconductors 2SA1302 Transistor Unit in mm Silicon PNP Epitaxial Type (PCT Process) For General Purpose Switching and Amplifier Applications Features · Complementary to 2SC3281 · Recommended for 100W High Fidelity Audio Frequency - Amplifier Output Stage Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -200 , ~ 160 TOSHIBA CORPORATION 1/2 2SA1302 The information contained here is subject to change
Toshiba
Original
amplifier 100W TOSHIBA Transistor Silicon PNP Epitaxial Type toshiba audio power amplifier

2sa1302

Abstract: hf amplifier 100w =-1A DC Current Gain R : 55 - 110, 151 2SA1302' Ic - v CE !C - V BE COLLKCTOR CURRENT , SILICON PNP EPITAXIAL TYPE 2SA1302 Unit in mm POWER AMPLIFIER APPLICATIONS. FEATURES: . Complementary to 2SC3281 . Recommmend for 100W High Fiderity Audio Frequency Amplifier Output Stage. 20.5MAX. JZ>3.3±0.2 1 2.5 ao MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc
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hf amplifier 100w 6Cp 30

2SB737

Abstract: 2SA1038 - 22 - m s Type No. tt S Manuf. = if SANYO X S TOSHIBA 0 a NEC B ïr HITACHI » ± a FUJITSU fé T MATSUSHITA H m MITSUBISHI â¡ â'" A BÃHM 2SA 1077 - *±a 2SB922 2SA1302 2SB946 2SA 1 078 ^ *±a 2SB920 2SA968 2SA985 2SB940 2SB1085 2SA 1079 «±a 2SA985A 2SB1085A 2SA 1080 . *±a 2SB511 2SA562TM 2SB536 2SB1085 2SA 1081 _ a ïr 2SA1207 2SA970 2SA988 2SB726 2SA904A 2SA1038 2SA , 2SA 1094 â" S: s 2SB816 2SA1301 2SA1232 2SA 1 095 . * £ 2SA1302 2SA _ _ fé T
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2SA991 2SA1016 2SA1018 2SA1177 2SB849 2SB737 2SB873 2SA1104 2SA847 2SA1015 ba 2SA921 2SA1783 2SB725 2SA992

2SA1302 transistor

Abstract: 2SA1302 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1302 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min) ·Complement to Type 2SC3281 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications .cn mi e , isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1302
INCHANGE Semiconductor
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Transistor 2SA1302 100W AUDIO ic AMPLIFIER pnp 200v

2SB817

Abstract: 2sa1115 2SA1302 2SB1372 2SA 1073 ' 2SB817 2SA1302 2SB1372
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OCR Scan
2SA1016K 2SA1123 2SA847A 2SA1142 2SA1175 2SA1782 2sa1115 sanyo 1042 2SB917 2SB915 2SA949

2SA1302 TOSHIBA

Abstract: 2sa1302 T O S H IB A T R A N SIST O R SEMICONDUCTOR TO SHIBA T E C H N IC A L 2 SA 1302 SILICO N PNP TRIPLE DIFFUSED TYPE DATA (2SA1302) U n it in mm POWER AMPLIFIER APPLICATIONS. 2 0.5M A X . « â'¢ 3 .3 ± 0 .2 C om plem entary to 2S C 3281 Recommend for 100W H igh F , prior consultation with TOSHIBA, 2SA1302 - 1 1994-5-14 TOSHIBA CORPORATION SEMICONDUCTOR TO , COLLECTOR-EMITTER VOLTAGE -30 0 Vc e (V) 2SA1302 - 2* 1 9 9 4 - 5 - 14 TOSHIBA CORPORATION
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motorola AN1308

Abstract: 300 watts audio amplifier schematics complementary Motorola bipolar power output transistors, the 2SC3281 and 2SA1302. These devices have better , three 2SC3281 NPN devices and three 2SA1302 PNP devices connected in parallel. These are driven by the , rapidly. The output devices that were selected are the 2SC3281 and 2SA1302 NPN and PNP transistors. These , CHARACTERISTICS FOR OUTPUT DEVICES 2SA1302 - PNP 1000 500 h FE , DC CURRENT GAIN 300 TC = 100°C 25°C 100 50 , R2 D4 1N4148 C8 0.1 µF Q13 MPS750 Q23 MJF15031 Q24 2SA1302 Q25 2SA1302 Q26 2SA1302 R16 2.2 k R6 2.21
Motorola
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motorola AN1308 300 watts audio amplifier schematics 1000 watts audio amplifier schematics power transistor audio amplifier 500 watts circuit diagram an1308 Elmwood Sensors AN1308/D AN1308

ELMWOOD SENSORS

Abstract: AN1308 INC., 1992 the 2SC3281 and 2SA1302. These devices have better linearity than devices previously , complementary darlington configuration. This stage utilizes three 2SC3281 NPN devices and three 2SA1302 PNP , output devices that were selected are the 2SC3281 and 2SA1302 NPN and PNP transistors. These , CHARACTERISTICS FOR OUTPUT DEVICES 2SA1302 - PNP 2SC3281 - NPN 1000 1000 COMMON EMITTER VCE = ­ 5 , 2SA1306B R7 10 k 0.1 µF Q13 MPS750 Q23 MJF15031 Q24 2SA1302 Q25 2SA1302 Q26
Motorola
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500 watts 12 VOLTS audio amplifier schematics 500 watts audio amplifier schematics elmwood sensors ltd Motorola design of audio amplifier an1308 300 watts amplifier schematics 12 volt audio amplifier class D schematic

2SA933S

Abstract: 2SB737 2SA1328 2SA1328 2SB320L 2SA1302 2SB926 2SA644 2SA1069 2SA1069 ¿SB70» 2SA1646 % n % n % 2SB867 , 2SB1197K 2SA933S 2SB1426 2SB1295 2SA1782 2SA1048 2SA1174 2SB1068 2SA1302 2SB1037 2SA1258 2SA1011 2SA1606
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OCR Scan
2SA1285 2SA1124 2SA1310 2SA1299 2SB1186B 2SA1757 2sb1425 2SA1286H 2SA114 2SA1285A 2SA1286 2SA1287J 2SA1288 2SA1289

2SK 150A

Abstract: mg100g1al2 ! 2SA1302 2SA1302 2SA1302 2SA 1265N 2SA1301 2SA1302 2SA1357 2 SA 1360 2SA1265N 2SA970 2SA1358 2SA1358 , 435/G 2SB439 2SB440 2SB461 2SB462 2SB463 2SB464 2SA1302 2SA1049 2SA 562T M 2SA1301 2SA1048 2SB834 , 2SC199 2SB8/53 2SA1302 2SB 1018 2S B 753 2 S B 1019 2S B 553 2 S B 1015 2 S B 834 2SB 1016 2 S B 595
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OCR Scan
2SA28 2SK 150A 2SC2461 B 2SD1365 2sk30 C366G 2SC102 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1302 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min) ·Complement to Type 2SC3281 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM , INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1302 ELECTRICAL CHARACTERISTICS TC
Toshiba
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TOSHIBA MG150N2YS40 toshiba s2530a mg75j2ys40 3SK35 MG30G1BL2 TOSHIBA MG15G1AL3 050106DAA1 YTF230

mg75n2ys40

Abstract: 2N3055 TOSHIBA - 22 - m s Type No. tt S Manuf. = if SANYO X S TOSHIBA 0 a NEC B ïr HITACHI » ± a FUJITSU fé T MATSUSHITA H m MITSUBISHI â¡ â'" A BÃHM 2SA 1077 - *±a 2SB922 2SA1302 2SB946 2SA 1 078 ^ *±a 2SB920 2SA968 2SA985 2SB940 2SB1085 2SA 1079 «±a 2SA985A 2SB1085A 2SA 1080 . *±a 2SB511 2SA562TM 2SB536 2SB1085 2SA 1081 _ a ïr 2SA1207 2SA970 2SA988 2SB726 2SA904A 2SA1038 2SA , 2SA 1094 â" S: s 2SB816 2SA1301 2SA1232 2SA 1 095 . * £ 2SA1302 2SA _ _ fé T
Toshiba
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2N3055 TOSHIBA TLR103 TOSHIBA 2N3055 S2530A MG15G1AL3 iss193 S2540 TIP29B S2543 TIP29C YTF231 S2582
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