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Part : 2SA1300-BL(F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 300 Best Price : $2.40 Price Each : $2.58
Part : 2SA1300-GR(F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 300 Best Price : $2.40 Price Each : $2.58
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2SA1300 Datasheet

Part Manufacturer Description PDF Type
2SA1300 Transys Electronics Plastic-Encapsulated Transistors Original
2SA1300 Unisonic Technologies PNP EPITAXIAL SILICON TRANSISTOR Original
2SA1300 Various Russian Datasheets Transistor Original
2SA1300 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SA1300 N/A The Transistor Manual (Japanese) 1993 Scan
2SA1300 N/A Transistor Substitution Data Book 1993 Scan
2SA1300 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SA1300 N/A Transistor Shortform Datasheet & Cross References Scan
2SA1300 N/A Japanese Transistor Cross References (2S) Scan
2SA1300 N/A Cross Reference Datasheet Scan
2SA1300 Toshiba PNP transistor Scan
2SA1300 Toshiba TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS) Scan
2SA1300 Toshiba TO-92 Transistors Scan
2SA1300 Toshiba TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Scan
2SA1300-BL N/A Transistor Shortform Datasheet & Cross References Scan
2SA1300BL Toshiba Silicon PNP Epitaxial Type Transistor Scan
2SA1300-G N/A Transistor Shortform Datasheet & Cross References Scan
2SA1300GR Toshiba Silicon PNP Epitaxial Type Transistor Scan
2SA1300-Y N/A Transistor Shortform Datasheet & Cross References Scan
2SA1300Y Toshiba Silicon PNP Epitaxial Type Transistor Scan

2SA1300

Catalog Datasheet MFG & Type PDF Document Tags

2SA1300

Abstract: 2SA1300GR Current gain and excellent hFE linearity Low Saturation Voltage G 2SA1300-Y 140~280 Range Emitter Collector Base J CLASSIFICATION OF hFE(1) Product-Rank H A 2SA1300-GR D 2SA1300-BL 200~400 REF. B 300~600 A B C D E F G H J K K E C F , 2SA1300 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS , informed individually. Page 1 of 2 2SA1300 Elektronische Bauelemente -2 A, -20 V PNP Plastic
SeCoS
Original
2sA1300 transistor

2SA1300

Abstract: QW-R208-012 UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES 1 *High DC Current Gain and Excellent hFE Linearity. *hFE(1)=140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC , 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR RANGE 140-280 200-400 300-600 - continued CHARACTERITICS CURVE UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R208-012,A UTC 2SA1300 PNP EPITAXIAL
Unisonic Technologies
Original

2SA1300

Abstract: 2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications · Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = -1 V, IC = -0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = -1 V, IC = -4 A) · Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -2 A, IB = -50 mA) Maximum , 2SA1300 2 2003-03-24 2SA1300 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is
Toshiba
Original
SC-43

2SA1300

Abstract: 25F1B 2SA1300 PNP (PCT) 2SA1300 · : mm hFE : hFE (1) = 140~600 (VCE = -1 V, IC = -0.5 A) : hFE (2) = 60 (), 120 () (VCE = -1 V, IC = -4 A) · : VCE (sat) = -0.5 V () (IC = -2 A, IB = -50 mA) (Ta = 25°C) -20 VCEO -10 VEBO -6 IC -2 ICP -5 IB -0.2 A PC 750 mW DC ( 1) VCES , ~600 1 2007-11-01 2SA1300 2 2007-11-01 2SA1300 · · ·
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Original
25F1B

2SA1300

Abstract: ST 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO , , Stock Code: 724) R Dated : 07/12/2002 ST 2SA1300 Characteristics at Tamb=25 OC Symbol Min , ) R Dated : 07/12/2002 ST 2SA1300 I C - VBE -100 -50 -30 -4 -3 COMMON EMITTER Ta
Semtech Electronics
Original
NONREP100

TO92 LOW VCE PNP

Abstract: 2SA1300(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC Current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction , Capacitance Cob pF CLASSIFICATION OF Rank Range hFE Y 140-280 GR 200-400 BL 300-600 2SA1300
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Original
TO92 LOW VCE PNP

2SA1300

Abstract: 2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications · Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = -1 V, IC = -0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = -1 V, IC = , : hFE (1) classification Y: 140~280, GR: 200~400, BL: 300~600 1 2007-11-01 2SA1300 2 2007-11-01 2SA1300 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and
Toshiba
Original

2SA1300

Abstract: ST 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO , : 07/12/2002 ST 2SA1300 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Y , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 2SA1300 I C - VBE -100
Semtech Electronics
Original

2SA1300

Abstract: 2sA1300 transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR (PNP) TO-92 FEATURES High DC Current gain and excellent hFE linearity Low saturation voltage 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter 3. BASE Value Units VCBO Collector-Base Voltage -20 V VCEO , Characteristics 2SA1300 Jiangsu Changjiang Electronics Technology
Jiangsu Changjiang Electronics Technology
Original

A1300 transistor

Abstract: A1300 GR TOSHIBA T O SH IB A T R A N SISTO R 2SA1300 ST R O BO FLASH A PP LIC A TIO N S 2SA1300 SILICO N PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm . 5.1 M A X . M E D IU M P O W ER A M P LIF IER A PP LIC A T IO N S High DC Current Gain and Excellent hpE Linearity : hF E m = 140-600 (Vc e = , h a n g e w it h o u t notice. such T O 2000 - 11-28 1/3 TOSHIBA 2SA1300 , O O < O r H > o o < o < 2SA1300
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OCR Scan
A1300 transistor A1300 GR A1300 transistor A1300 br A1300 GR br A1300 000707EAA1

2SA1300

Abstract: 2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications · Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = -1 V, IC = -0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = -1 V, IC = -4 A) · Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -2 A, IB = -50 mA) Absolute , 2007-11-01 2SA1300 2 2007-11-01 2SA1300 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL
Toshiba
Original

2SA1300

Abstract: 2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications · Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = -1 V, IC = -0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = -1 V, IC = -4 A) · Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -2 A, IB = -50 mA) Maximum , 2003-03-24 2SA1300 2 2003-03-24 2SA1300 RESTRICTIONS ON PRODUCT USE 000707EAA ·
Toshiba
Original
Abstract: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and Excellent hFE Linearity. *hFE(1)=140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC , CO. LTD V V MHz pF 1 QW-R201-045,A UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR , UNISONIC TECHNOLOGIES CO. LTD 2 QW-R201-045,A UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR Unisonic Technologies
Original

2SA1300

Abstract: ST 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO , : 07/12/2002 ST 2SA1300 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Y , Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SA1300 I C - VBE -100 -50 -30
Semtech Electronics
Original

2SA1300

Abstract: ST 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO , Code: 724) Dated : 07/12/2002 ST 2SA1300 Characteristics at Tamb=25 OC Symbol Min. Typ , Code: 724) Dated : 07/12/2002 ST 2SA1300 I C - VBE -100 -50 -30 -4 -3 COMMON EMITTER
Semtech Electronics
Original
Abstract: = -2A,IE= -50mA)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SA1300L-xx-AB3-R 2SA1300G-xx-AB3-R 2SA1300L-xx-T92-B 2SA1300G-xx-T92-B 2SA1300L-xx-T92-K 2SA1300G-xx-T92-K Note: Pin , UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL , TECHNOLOGIES CO., LTD 2SA1300  PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA , Co., LTD GR 200-400 BL 300-600 2 of 3 QW-R208-012.C 2SA1300 PNP EPITAXIAL SILICON Unisonic Technologies
Original
2SA1300L- 2SA1300G- QW-R201-004

2SA1300

Abstract: 2sA1300 transistor UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and , CO. LTD V V MHz pF 1 QW-R201-045,A UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR , UNISONIC TECHNOLOGIES CO. LTD 2 QW-R201-045,A UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR CHARACTERITICS CURVE UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R201-045,A UTC 2SA1300 PNP EPITAXIAL
Unisonic Technologies
Original
transistor 2A pnp
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER MAXIMUM RATINGS* TA=25â"ƒ unless otherwise noted Symbol Parameter 2. COLLECTOR Value Units 3. BASE VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -10 V VEBO Emitter-Base , GR BL 140-280 200-400 300-600 Typical Characteristics 2SA1300 Jiangsu Jiangsu Changjiang Electronics Technology
Original
Abstract: TOSHIBA TOSHIBA TRANSISTOR 2SA1300 STROBO FLASH APPLICATIONS 2SA1300 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm .5.1 M AX. M EDIUM PO W ER AM PLIFIER APPLICATIONS · High DC C urrent Gain and Excellent h p g Linearity : hpE (i) = 140-600 (V ç e = -IV, I ç = -0.5A) · : hFE (2)= 60 (Min.), 120 (Typ.) (VCE= - I V , IC = -4 A ) Low Saturation Voltage : VCE (sat) = , TOSHIBA 2SA1300 ic - vce ic - vbe C O L L E C T O R - E M IT T E R V O L T A G E VCE (V -
OCR Scan
L/U11CCIUI 961001EAA2

2sA1300 transistor

Abstract: 2SA1300 2SA1300 2SA1300 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM : 0.75 W (Tamb=25) Collector current A ICM : -2 Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 TJ : 150 Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-1mA , IE=0 -20
WEJ Electronic
Original

2SA1300

Abstract: TOSHIBA TOSHIBA TRANSISTOR STROBO FLASH APPLICATIONS 2SA1300 2SA1300 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm 5.1 M AX. M EDIUM PO W ER AM PLIFIER APPLICATIONS · · High DC Current Gain and Excellent hEE Linearity : hFE (1) = 140-600 (Vqe = - IV, Iq = -0.5A) :hFE(2) = 60(Min.), 120 (Typ.) (VCE = - IV, IC= -4 A ) Low Saturation Voltage : VCE (sat) = -0 .5 V (Max.) (IC , TOSHIBA 2SA1300 IC - VCE < o < o Ic - Vb e C O LLEC T O R - EM IT T ER V O LT A G E VcE
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OCR Scan
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