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Part : 2SA1179N6-TB-E Supplier : ON Semiconductor Manufacturer : Allied Electronics & Automation Stock : - Best Price : $0.12 Price Each : $0.1240
Part : 2SA1179-6-TB-E Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 30,000 Best Price : $0.07 Price Each : $0.07
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2SA1179 Datasheet

Part Manufacturer Description PDF Type
2SA1179 Galaxy Semi-Conductor Holdings Silicon Epitaxial Planar Transistor Original
2SA1179 Jiangsu Changjiang Electronics Technology TRANSISTOR (PNP) Original
2SA1179 Kexin PNP Epitaxial Planar Silicon Transistors Original
2SA1179 TY Semiconductor PNP Epitaxial Planar Silicon Transistors - SOT-23 Original
2SA1179 N/A Transistor Substitution Data Book 1993 Scan
2SA1179 N/A The Japanese Transistor Manual 1981 Scan
2SA1179 N/A PNP / NPN Transistor Scan
2SA1179 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SA1179 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SA1179 N/A Transistor Shortform Datasheet & Cross References Scan
2SA1179 N/A Shortform Transistor PDF Datasheet Scan
2SA1179 N/A Japanese Transistor Cross References (2S) Scan
2SA1179 N/A The Transistor Manual (Japanese) 1993 Scan
2SA1179 N/A Semiconductor Master Cross Reference Guide Scan
2SA1179 Sanyo Semiconductor PNP/NPN Epitaxial Planar Silicon Transistors Scan
2SA1179 Sanyo Semiconductor Transistor Scan
2SA1179 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan
2SA1179M4 N/A Transistor Shortform Datasheet & Cross References Scan
2SA1179M5 N/A Transistor Shortform Datasheet & Cross References Scan
2SA1179M6 N/A Transistor Shortform Datasheet & Cross References Scan
Showing first 20 results.

2SA1179

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SA1179 / 2SC2812 Ordering number : EN3218B SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1179 / 2SC2812 Low-Frequency General-Purpose Amplifier , breakdown voltage. Specifications ( ) : 2SA1179 Absolute Maximum Ratings at Ta=25°C Parameter , )6V, IC=(-)1mA 2SC2812 : VCE=6V, IC=1mA 2SA1179 : VCE=-6V, IC=-10mA Marking: 2SA1179: M / 2SC2812: L *: The 2SA1179 / 2SC2812 are classified by 1mA hFE as follws: Rank 5 6 7 hFE 135 to 270 SANYO Electric
Original

2SA1179

Abstract: 2SC2812 2SA1179 / 2SC2812 No. N 3 2 1 8 B No.N3218 2SA1179 / 2SC2812 PNP / NPN 2SA1179 Absolute Maximum Ratings / Ta=25 VCBO VCEO VEBO IC ICP IB PC Tj , Cob VCB=(-)35V, IE=0A VEB=(-)4V, IC=0A VCE=(-)6V, IC=(-)1mA 2SC2812 : VCE=6V, IC=1mA 2SA1179 : VCE= - 6V, IC= - 10mA VCB=(-)6V, f=1MHz 2SA1179 : M / 2SC2812 : L min typ 135 max (-)0.1 (-)0.1 600 unit A A 100 MHz (180) (4.0)3.0 MHz pF 2SA1179
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Original
IT12013 2SA1179M 20608CA TC-00001200 6199KN X-2476

2SC2812

Abstract: 2SA1179 2SA1179 / 2SC2812 Ordering number : EN3218B SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1179 / 2SC2812 Low-Frequency General-Purpose Amplifier , breakdown voltage. Specifications ( ) : 2SA1179 Absolute Maximum Ratings at Ta=25°C Parameter , Gain-Bandwidth Product fT VCE=(-)6V, IC=(-)1mA 2SC2812 : VCE=6V, IC=1mA 2SA1179 : VCE=-6V, IC=-10mA Marking: 2SA1179: M / 2SC2812: L *: The 2SA1179 / 2SC2812 are classified by 1mA hFE as follws: Rank 5
SANYO Electric
Original
IT12010

2SA1179

Abstract: 2SA1179 Pb Lead-free High breakdown voltage. APPLICATIONS General purpose application. SOT-23 ORDERING INFORMATION Type No. Marking Package Code M SOT-23 2SA1179 MAXIMUM RATING @ Ta , 2SA1179 ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Parameter Symbol Test , 2SA1179 SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping 2SA1179 SOT-23 3000/Tape&Reel Document number: BL/SSSTC093 Rev.A www.galaxycn.com 3 BL
BL Galaxy Electrical
Original
3000/T
Abstract: 2SA1179 Pb High forward current transfer ratio hFE Lead-free which has satisfactory linearity , . SOT-23 ORDERING INFORMATION Type No. Marking Package Code M SOT-23 2SA1179 , Epitaxial Planar Transistor 2SA1179 ELECTRICAL CHARACTERISTICS @ Ta=25â"ƒ unless otherwise specified , 2SA1179 www.galaxycn.com 3 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SA1179 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 Dim BL Galaxy Electrical
Original
2SD1749

2SC2812

Abstract: k 2057 SANYO SEMICONDUCTOR CORP SBE D 2SA1179, 2SC2812 2018A imQl^ DDD73it 1 T-29-/S PNP/NPN , '¢ Small-sized package permitting the 2SA1179/2SC2812-applied sets to be made small and slim â'¢ High breakdown voltage ( ) : 2SA1179 Absolute Maximum Ratings atTa=25°C Collector to Base Voltage Vcbo Collector to , =0 VcE=(-)6V,Ic=(-)lmA 2SC2812 : VCe = 6V,IC = 1mA 2SA1179 : VCe= -6V,IC = -10mA Vcb = (â'")6V,f = 1MHz , 2SA1179/2SC2812 are classified by 1mA hFE as follows : 90 4 180 135 5 270 200 6 400 300 7 600 Marking
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OCR Scan
600S8 k 2057 3v61 T29 marking AJR MARKING 2SC28 DDD73 2SA1179/2SC2812- 2SA1179/2SC2812

2018a

Abstract: 2SC2812 SA I YO r Bi^mm^-^L-x - * NO.C90C, 691D ('87-88 v'- 9 y 9 h 9 > No.6901» t * 2SA1179/2SC2812 «jstt-jKJN«ffl X) tf £ â'¢ 'MU ï - VO) ti iò -\z y h «O'bSHt, MZMtWïJiï. V h * c : ' ^ .X, jp / ,-"' { )í*J ti 2SA11790 í> i' 'J 0 ' ' ' '. ifeWÃ"^vSlrtS Absoluto Maximum HatingsyTu ;=25°C , = t-iíníÁ 90& 600» *IJ W^iífe'l'S« fr .// 2SC2812 : VCE = GV;ImA 100 MHz 2SA1179 , 90 // 180 135 5 270/ 200 6 400 300 7 fiOO 2SA1179 : M Mm 2018A (unit : mm) ¿FT »"iTTïT Tt
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OCR Scan
2018a A1179 T370-05 A1179/2SC2812

2SA1179

Abstract: 10u 35v JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1179 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 (PNP) FEATURES . High breakdown voltage 1. BASE 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -55 V VCEO Collector-Emitter Voltage -50 V , Cob VCB=-6V,IE=0,f=1MHz 180 MHz 4 pF Typical Characteristics 2SA1179
Jiangsu Changjiang Electronics Technology
Original
10u 35v
Abstract: 2SA1179 SOT-23 Transistor(PNP) 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features High breakdown voltage MARKING: M MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC Pc TJ Tstg Parameter Value -55 -50 -5 -150 200 150 -55-150 Units V V V mA mW Dimensions in inches and (millimeters) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current , =-50mA,IB=-5mA VCE=-6V,IC=-10mA VCB=-6V,IE=0,f=1MHz 2SA1179 SOT-23 Transistor(PNP) Typical -
Original

2SA1179

Abstract: transistor marking 3k 2SA1179 -0.15A , -55V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES High breakdown voltage A L 3 3 C B Top View 1 MARKING 1 K Product E 2 Marking Code 2SA1179 2 M D F G PACKAGE INFORMATION REF. Package MPQ LeaderSize , specification will not be informed individually. Page 1 of 2 2SA1179 Elektronische Bauelemente -0.15A
SeCoS
Original
transistor marking 3k

2SA1179

Abstract: Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1179 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High breakdown voltage 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -55 V Collector-emitter voltage
Kexin
Original

DSB010

Abstract: DSD010 Implementation Date Small-signal general-purpose MCP 2SA1622 December 1995 transistors CP 2SC4211 2SA1179
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OCR Scan
2SK596 2SK1375 2SC3653 2SA1722 2SC3399 2SC4361 DSB010 DSD010 DSC010 2sa1571 CAPACITOR MICROPHONE 2SA1420 2SA1676

2SA1179

Abstract: 10u 35v JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1179 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 (PNP) FEATURES . High breakdown voltage 1. BASE 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -55 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PD
Jiangsu Changjiang Electronics Technology
Original
sot 23 PNP
Abstract: Product specification 2SA1179 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High breakdown voltage 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -55 V Collector-emitter voltage VCEO -50 V Emitter-base TY Semiconductor
Original
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1179 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 (PNP) 3 FEATURES . High breakdown voltage 1 1. BASE 2 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -55 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous Jiangsu Changjiang Electronics Technology
Original

2SA1179

Abstract: RECTRON 2SA1179 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * High breakdown voltage SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * * 1 BASE Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram Marking: M 0.055(1.40) 0.047(1.20) 2 EMITTER 0.006(0.15) 0.003(0.08) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004
Rectron Semiconductor
Original

2SA1108A

Abstract: 2SA1152 2SA1179 -55 -5 -150 2SA1180 -150 -5 -15A 2SA1180A -200 -7 -10A 2SA1182 -35
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Original
2SA1103 2SA1104 2SA1108 2SA1108A 2SA1113 2SA1115 2SA1152 2SA1103, 2SA1104, 2SA1106, 2SA1186, 2SA1187 2SA1136 2SA1126 2sa1144 2SA1102 2SA1105 2SA1106 2SA1107

2SA1161

Abstract: TO-202MOD 2.5dB f=100MHz (SPA) ECB 2SA1177 180* -6 -0.01 7* (SC-59 (CP) BCE 2SA1179 200* -6 -0.02
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OCR Scan
2SA1156 2SA1160 2SA1161 SA1162 2SA1163 2SA1173 TO-202MOD 2sa1200 2SA1186 2Sa1206 SA1175 SA1171

ci 4565

Abstract: taito - X100[%] a Note: * Input signal/output signal Sample Application Circuit A03B27 2SA1179 2SC2612 No
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OCR Scan
LC89915 LC89915M ci 4565 taito oasis EN5115 89915M 3001B-DIP8 3032B-MFP8

2SC2812NL

Abstract: 2SA1179 No. N 7 1 9 8 2SA1179N / 2SC2812N No. N7198 72602 2SA1179N / 2SC2812N PNP / NPN 2SA1179N Absolute Maximum Ratings / Ta=25 unit VCBO VCEO (-)55 , unit µA (-)0.1 400 2SC2812 : VCE=6V, IC=1mA 2SA1179 : VCE= - 6V, IC= - 10mA typ , )50 (-)5 V V 2SA1179NM 0.42 3 2 0.95 0.95 2.4 1.3 1 1.9 2.92 0.97 , 2SA1179N / 2SC2812N IC - VCE A -50µ A -45µ A -40µ -35µA -30µA -25µA -12 -8
SANYO Electric
Original
2SC2812NL TA-2636 IT04196 IT04201 IT04202 IT04204

2SA1301 TOSHIBA

Abstract: 2sa970 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1179 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 (PNP) 3 FEATURES . High breakdown voltage 1 1. BASE 2 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -55 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous
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OCR Scan
2SA1782 2SA1323 2SA1232 2SA1207 2SA988 2SA921 2SA1301 TOSHIBA 2sa970 da 1191 Toshiba 2SB754 2SA904A 2SA1038 2SA1415 2SA1048 2SA1127 SA1299 2SA933S

2SC2812N

Abstract: 2SA1179N RECTRON 2SA1179 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * High breakdown voltage SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * * 1 BASE Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram Marking: M 0.055(1.40) 0.047(1.20) 2 EMITTER 0.006(0.15) 0.003(0.08) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004
SANYO Electric
Original
2sa117 ENN7198
Showing first 20 results.