NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SA1162 | Galaxy Semi-Conductor Holdings Limited | Silicon Epitaxial Planar Transistor |
4 pages, |
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| 2SA1162 | N/A | Semiconductor Master Cross Reference Guide |
1 pages, |
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| 2SA1162 | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
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| 2SA1162 | N/A | Transistor Substitution Data Book 1993 |
1 pages, |
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| 2SA1162 | N/A | The Transistor Manual (Japanese) 1993 |
2 pages, |
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| 2SA1162 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
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| 2SA1162 | Toshiba | PNP transistor |
3 pages, |
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| 2SA1162 | Toshiba | TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
2 pages, |
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| 2SA1162 | Toshiba | Transistor Silicon PNP Epitaxial Type (PCT Process) |
2 pages, |
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| 2SA1162 | Toshiba | Super Mini Package (TO-236 / SOT-23) Transistors |
1 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SA1162 Pb Low noise:NF=1dB(Typ),10dB(Max). Lead-free Commplementary to 2SC2712 2SC2712. Small , Marking 2SA1162 Package Code SO/SY/SG SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise , Silicon Epitaxial Planar Transistor 2SA1162 Parameter Symbol Test conditions MIN , specification Silicon Epitaxial Planar Transistor 2SA1162 TYPICAL CHARACTERISTICS @ Ta=25 unless , Production specification Silicon Epitaxial Planar Transistor 2SA1162 PACKAGE OUTLINE Plastic ... | Original |
4 pages, |
SY SOT23 sy marking code sot23 sg sot23 2SC2712 2SA1162 MARKING SY SOT23 MARKING sg SOT23 2SC2712 abstract |
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| Abstract: 2SA1162 PNP (PCT) 2SA1162 : mm · · : IC = -150 mA () : VCEO = -50 V · · hFE : hFE = 70~400 : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 () · , 2-3F1A : 0.012 g () °C : (//) ( / ) () () 1 2007-11-01 2SA1162 , 2007-11-01 2SA1162 IC  VCE IB  VBE -1000 -240 -500 -300 -2.0 VCE = -6 V (A , ) 2007-11-01 2SA1162 · · · · "" · · · ... | Original |
4 pages, |
2SC2712 2SA1162 2SA1162 abstract |
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| Abstract: D CLASSIFICATION OF hFE F Product-Rank 2SA1162-O 2SA1162-Y 2SA1162-GR Range , 2SA1162 -0.15A, -50V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen and lead free FEATURES SOT-23 Low Noise: NF=1 dB(Typ.), 10 dB(Max.) Complements of the 2SC2712 2SC2712 A L 3 3 MECHANICAL DATA C B , individually. Page 1 of 2 2SA1162 Elektronische Bauelemente -0.15A, -50V PNP Silicon General Purpose ... | Original |
2 pages, |
MARKING SY SOT23 2SC2712 2SA1162Y 2SA1162-Y 2SA1162-GR 2sa116 2SA1162GR 2SA1162 2SA1162 abstract |
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| Abstract: 2SA813 2sa798 809 «±ii 2SA778 2SA778«) 2SA 810 *±a 2SA778 2SA778(K) 2SA 811 „ e m 2SA1781 2SA1781 2SA1162 2SA1122 2SA1122 2SB814 2SB814 2SA1037K 2SA1037K 2SA 811A 0 s 2SA1257 2SA1257 2SA1162 2SB814 2SB814 2SAI455K 2SAI455K 2SA 812 „ B S 2SA1781 2SA1781 2SA1162 2SA1617 2SA1617 2SB709A 2SB709A ... | OCR Scan |
1 pages, |
2SA1015 2SA1016 2SA1309A 2SA1339 2SA675 2SA699A 2SA699A matsushita 2SA743 2SA785 2SB631 2SB1064 2SA836 2sa790 2SA1207 2sa733 2SB631 abstract |
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| Abstract: 2SB1086A 2SB1086A 2SA 1022 - «5 T 2SA1256 2SA1256 2SA1162 2SA1733K 2SA1733K 2SA 1023 0 ÉÉ. 2SA921 2SA921 2SA1039 2SA1039 2SA 1 024 (Hi , 1015 2SA987 2SA987 2SA1309A 2SA1309A 2SA933 2SA933 2SA 1034 . fó T 2SA930 2SA930 2SA1162 2SA811A 2SA811A 2SA1031 2SA1031 2SA1037KLN 2SA1037KLN 2SA 1035 - «J T 2SA929 2SA929 2SA1162 2SA811A 2SA811A 2SA1032 2SA1032 2SA1037KLN 2SA1037KLN 2SA 1 036 â-¡ -A 2SA1338 2SA1338 2SA1182 2SA1182 2SB624 2SB624 2SA ... | OCR Scan |
1 pages, |
2SB946A 2SA1011 2SA1115 2SA1306B 2SA1408 0 2SA921 2SA991 2sa 1023 2SB1085 2SB1085B 2SB646 2SB817 2SB921 2SB940 2SB940A 2SA1011 abstract |
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| Abstract: MCC 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features · · · · PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation. Collector-current: 0.15A Collector-base Voltage: -50V Operating and storage junction temperature range: -55 to +150 Case Material: Molded Plastic. Classification Rating 94V-0 UL Flammability SOT-23 A D C O Electrical ... | Original |
2 pages, |
2SA1162Y 2SA1162GR 2SA1162-GR datasheet abstract |
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| Abstract: * * S! « Type No. tt € Manuf. SANYO S £ TOSHIBA a a NEC B Si HITACHI * ± a FUJITSU ® T MATSUSHITA ' * MITSUBISHI â-¡ - A ROHM 2SA 1614 fe T 2SA1772 2SA1772 2SA 1615 . a « 2SA1641 2SA1641 2SB936 2SB936 2SA 1615 Z 0 « 2SA1641 2SA1641 2SA 1616 .E $ RN2206 RN2206 UN4116 UN4116 2SA 1617 S St 2SA1781 2SA1781 2SA1162 2SA812 2SA812 2SA1022 2SA1022 2SA1235 2SA1235 2SA 1618. * £ FC103 FC103 XN1401 XN1401 2SA 1619 (2 T 2SB544 2SB544 2SA 1620 2SB1218A 2SB1218A , 2SA1153 2SA1153 2SA1309A 2SA1309A 2SA1399 2SA1399 2SA 1637 â-¡ -A 2SA1607 2SA1607 2SA1162 2SB709A 2SB709A 2SA1366 2SA1366 2SA 1638 â-¡ -A 2SA5627M 2SA5627M ... | OCR Scan |
1 pages, |
2SA1022 2SA1162 2SA1235 2SA1399 2SA1576 2SA1641 FC103 2SA1772 2SA1781 2SB936 2SA812 RN2206 2sa1175 2SA1586 2sa1015 2SA1772 abstract |
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| Abstract: 2SA 1763 2SA1586 2SA1586 2SB1218 2SB1218 2SA1602 2SA1602 2SA 1764 « Â¥ 2SA1162 2SA1461 2SA1461 2SB709 2SB709 2SA1602 2SA1602 2SA 1765 , 2SA1481 2SA1481 2SA1015 2SA1015 2SB1206 2SB1206 2SA 1780 â-¡ -A 2SA1785 2SA1785 2SB1488 2SB1488 2SA 1781 H n 2SA1162 2SA1617 2SA1617 ... | OCR Scan |
1 pages, |
2SA1121 2SA1182 2SA1365 2SA1383 2SA1452 2SA1464 2SA1535 2SA1535A 2SB970 1769 -L32E 2sa183 2SA170B 2Sa1744 2sa1115 2SB709 2SA1156 2SA1110 2SA1156 abstract |
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| Abstract: 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications · High voltage and high current: VCEO = -50 V, IC = -150 mA (max) · Unit: mm Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ. , , GR (G): 200~400, ( ) marking symbol Marking 1 2003-03-27 2SA1162 2 2003-03-27 2SA1162 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA is continually working to improve the ... | Original |
3 pages, |
2SC2712 2SA1162 2SA1162 abstract |
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| Abstract: MCC 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features · · · · PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation. Collector-current: 0.15A Collector-base Voltage: -50V Operating and storage junction temperature range: -55 to +150 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 SOT-23 A D C O ... | Original |
2 pages, |
2SA1162Y datasheet abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 (PNP) FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712 2SC2712. . Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base , Typical Characteristics 2SA1162 ... | Original |
2 pages, |
MARKING SO 2SC2712 2SA1162 MARKING SY SOT23 MARKING sg SOT23 2SA1162 abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SA1162 TRANSISTOR (PNP) FEATURES Low noise : NF= 1dB(Typ.),10dB (Max.) Complementary to 2SC2712 2SC2712. Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage , Typical Characteristics 2SA1162 ... | Original |
2 pages, |
2SC2712 2SA1162 2SA1162 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| General Purpose Amplifier Transistors 2SA1162GT1/D (45.0kB) 0 100 www.datasheetarchive.com/files/on-semiconductor/taxonomy/bipolartransistors.htm |
On Semiconductor | 28/09/2007 | 122.37 Kb | HTM | bipolartransistors.htm |
| =751.194P XTF=500.024M + VTF=9.99997 ITF=155.473P TR=10N) * PNP .MODEL 2SA1162 PNP (IS=10.1814F 1814F 1814F 1814F BF www.datasheetarchive.com/files/spicemodels/misc/models/japan.lib |
Spice Models | 01/09/2003 | 54.33 Kb | LIB | japan.lib |
| * Modification History: Sripada, Added New Model awbbsr12; Thursday, March 01, 2007 *$ model description: "awb2n2605" *b Device model created by analog_uprev for 2n2605 on Fri Feb 9 00:08:30 IST 2001 .subckt awb2n2605 C B E + params: + IC_VCE=1.10250E-36 10250E-36 10250E-36 10250E-36 + IC_VBE=1.10250E-36 10250E-36 10250E-36 10250E-36 + STATE=1 + TEMP=0 + AREA=1.0 + STATE_FACTOR=0 + IS=10E-15 10E-15 10E-15 10E-15 + BF=220 + NF=1 + VAF=100 + IKF=20E-3 20E-3 20E-3 20E-3 + ISE=1.39E-15 39E-15 39E-15 39E-15 + NE=1.2874 + BR=1.0 + NR=1 + VAR=100 + IKR=0.02 + ISC=0 + NC=1 + RB=100 + RBM=100 www.datasheetarchive.com/files/spicemodels/misc/bjp.lib |
Spice Models | 21/06/2007 | 700.88 Kb | LIB | bjp.lib |
| * * Copyright Intusoft 1988-1997 * All Rights Reserved * * *SRC=BCY70 BCY70 BCY70 BCY70;BCY70 BCY70 BCY70 BCY70;BJTs PNP;Gen. Purpose;40V 200mA .MODEL BCY70 BCY70 BCY70 BCY70 PNP (IS=2.03E-14 03E-14 03E-14 03E-14 NF=1.0 BF=321 VAF=114 + IKF=7.0E-02 0E-02 0E-02 0E-02 ISE=4.45E-13 45E-13 45E-13 45E-13 NE=2.0 BR=4 NR=1.0 VAR=20 + XTB=1.5 RE=6.8E-01 8E-01 8E-01 8E-01 RB=2.7E+00 RC=2.7E-01 7E-01 7E-01 7E-01 + CJE=9.8E-12 8E-12 8E-12 8E-12 CJC=9.3E-12 3E-12 3E-12 3E-12 TF=3.2E-10 2E-10 2E-10 2E-10 TR=1.5E-07 5E-07 5E-07 5E-07) * 40 Volt 0.20 Amp 500 MHz SiPNP Transistor 06-27-1990 * Philips * *SRC=BCY71 BCY71 BCY71 BCY71;BCY71 BCY71 BCY71 BCY71;BJTs PNP;Gen. Purpose;45V 200mA .MODEL BCY71 BCY71 BCY71 BCY71 PNP ( www.datasheetarchive.com/files/spicemodels/misc/modelos/spice_complete/bjtp.lib |
Spice Models | 18/04/2010 | 90.81 Kb | LIB | bjtp.lib |
| Sheet1 Sheet2 Sheet3 rxrf_1 Part # Model/Subckt Name Part Type SubType Description IGEN IGEN !Generators !Pulse Symmetric Current VGEN VGEN !Generators !Pulse Symmetric Voltage PSUPPLY PSUPPLY !Generators Power Power Supply PWRSPLY PWRSPLY !Generators Power Current Limited PWRSPLY2 PWRSPLY2 !Generators Power Sigmoid Current Limited AM AM !Generators Signal DCLK DClock !Generators Signal Digital oscillator DSOURCE Dsource !Generators Signal Digital source Exponential Exponential !Generato www.datasheetarchive.com/download/23131848-777573ZC/icap4rxrfliblist.zip (ICAP4RxRFlibList.xls) |
Spice Models | 29/07/2012 | 211.35 Kb | ZIP | icap4rxrfliblist.zip |
| 150 V 50MA 2SA1255 2SA1255 2SA1255 2SA1255 QSA1255 QSA1255 QSA1255 QSA1255 BJTs PNP High Voltage 200 V 50MA 2SA1162 QSA1162 QSA1162 QSA1162 QSA1162 BJTs PNP Low Noise 50 V www.datasheetarchive.com/download/46754491-777571ZC/icap4rxliblist.zip (ICAP4RxlibList.xls) |
Spice Models | 29/07/2012 | 198.91 Kb | ZIP | icap4rxliblist.zip |
| Voltage 200 V 50MA 2SA1162 QSA1162 QSA1162 QSA1162 QSA1162 BJTs PNP Low Noise 50 V .15A bc847bpdw1t1p bc847bpdw1t1p BJTs PNP ON www.datasheetarchive.com/download/31304461-777572ZC/icap4rxpwrliblist.zip (ICAP4RxPwrlibList.xls) |
Spice Models | 29/07/2012 | 215.73 Kb | ZIP | icap4rxpwrliblist.zip |
| Sheet1 Sheet2 Sheet3 standard_1 Part # Model/Subckt Name Part Type SubType Description IGEN IGEN !Generators !Pulse Symmetric Current VGEN VGEN !Generators !Pulse Symmetric Voltage DEADDRV DEADDRV !Generators Power DT Synchro. Rec. w/driver DEADSYNC DEADSYNC !Generators Power Dead Time Gene. Synchronous Rec. DEADTIME DEADTIME !Generators Power 1/2 Bridge DT Gen. NEWDT NEWDT !Generators Power 1/2 Bridge DT Gen. PSUPPLY PSUPPLY !Generators Power Power Supply PWRSPLY PWRSPLY !Generators Pow www.datasheetarchive.com/download/79967802-777574ZC/icap4winliblist.zip (ICAP4WinlibList.xls) |
Spice Models | 29/07/2012 | 388.92 Kb | ZIP | icap4winliblist.zip |
| =10) *$ .model Q2sa1162 PNP(Is=2.04f Xti=3 Eg=1.11 Vaf=100 Bf=183 Ise=2.14f Ne=1 www.datasheetarchive.com/files/spicemodels/misc/jbipolar.lib |
Spice Models | 22/09/2001 | 165.84 Kb | LIB | jbipolar.lib |
| =10) *$ .model Q2sa1162 PNP(Is=2.04f Xti=3 Eg=1.11 Vaf=100 Bf=183 Ise=2.14f Ne=1 www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/mixed part list/spice-models-collection/jbipolar.lib |
Spice Models | 29/07/2012 | 165.82 Kb | LIB | jbipolar.lib |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2SA1162 | N/A | Silicon PNP | |
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| 2SA1162 | N/A | RLG | |
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| 2SA1162BL | Toshiba | Si PNP Lo-Pwr BJT | |
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| 2SA1162GR | Toshiba | Si PNP Lo-Pwr BJT | |
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| 2SA1162O | N/A | Si PNP Lo-Pwr BJT | |
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| 2SA1162Y | N/A | Si PNP Lo-Pwr BJT | |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| BC857 | BC857BMTF Buy | 2SA1162-GRTE85L Buy | Toshiba | Close | Small Signal | PNP Epitaxial Silicon Transistor SOT-23 |
| BCX71G | BCX71G Buy | 2SA1162GR Buy | Jiangsu Changjiang Electronics Technology Co Ltd | Close | Small Signal | PNP Epitaxial Silicon Transistor |
| BCX71G | BCX71G Buy | 2SA1162O Buy | Jiangsu Changjiang Electronics Technology Co Ltd | Close | Small Signal | PNP Epitaxial Silicon Transistor |
| BCX71G | BCX71G Buy | 2SA1162Y Buy | Jiangsu Changjiang Electronics Technology Co Ltd | Close | Small Signal | PNP Epitaxial Silicon Transistor |
| Infineon (Siemens) Part | Status | Industry Part | Manufacturer | Description |
| BC857B Buy | 2SA1162 Buy | Toshiba | Single Transistors IC 100 mA | |
| BCX52 Buy | 2SA1162 Buy | Toshiba | Single Transistors IC 500 mA |
| KEC Part | Industry Part | Manufacturer | Category | Description |
| Leshan Radio Company Part | Industry Part |
| LMSD601-RT1 Buy | 2SA1162 Buy |
| NTE Electronics Part | Industry Part |
| NTE2409 Buy | 2SA1162 Buy |
| NTE2409 Buy | 2SA1162G Buy |
| NTE2409 Buy | 2SA1162-G Buy |
| NTE2409 Buy | 2SA1162O Buy |
| NTE2409 Buy | 2SA1162Y Buy |
| NTE2409 Buy | 2SA1162-Y Buy |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| MMBT2907ALT1 Buy | 2SA1162 Buy | Various | Direct |
| MMBT2907ALT1G Buy | 2SA1162Y Buy | Toshiba | Direct |
| MMBT3906LT1G Buy | 2SA1162BL Buy | Toshiba | Close |
| MMBT3906LT1G Buy | 2SA1162GR Buy | Jiangsu Changjiang Electronics Technology | Close |
| MMBT3906LT1G Buy | 2SA1162-GR(TE85L,F) Buy | Toshiba | Close |
| MMBT3906LT1G Buy | 2SA1162O Buy | Jiangsu Changjiang Electronics Technology | Close |
| MMBT3906LT1G Buy | 2SA1162Y Buy | Jiangsu Changjiang Electronics Technology | Close |
| MMBT3906LT3G Buy | 2SA1162BL Buy | Toshiba | Close |
| MMBT3906LT3G Buy | 2SA1162GR Buy | Jiangsu Changjiang Electronics Technology | Close |
| MMBT3906LT3G Buy | 2SA1162-GR(TE85L,F) Buy | Toshiba | Close |
| Toshiba Part | Industry Part | Manufacturer | Description | Category |
| 2SA1162 Buy | 2N3906S Buy | KEC | Transistor for Low-Frequency Small-Signal Amplification - S-Mini - SOT-346 | Transistors |
| 2SA1162 Buy | 2SA1037AK Buy | Rohm | Transistor for Low-Frequency Small-Signal Amplification - S-Mini - SOT-346 | Transistors |
| 2SA1162 Buy | 2SA1179 Buy | Sanyo Semiconductor | Transistor for Low-Frequency Small-Signal Amplification - S-Mini - SOT-346 | Transistors |
| 2SA1162 Buy | 2SA1252 Buy | Sanyo Semiconductor | Transistor for Low-Frequency Small-Signal Amplification - S-Mini - SOT-346 | Transistors |
| 2SA1162 Buy | 2SA1331 Buy | Sanyo Semiconductor | Transistor for Low-Frequency Small-Signal Amplification - S-Mini - SOT-346 | Transistors |
| 2SA1162 Buy | 2SA2077 Buy | Panasonic (Matsushita) | Transistor for Low-Frequency Small-Signal Amplification - S-Mini - SOT-346 | Transistors |
| 2SA1162 Buy | 2SA812 Buy | NEC Electronics | Transistor for Low-Frequency Small-Signal Amplification - S-Mini - SOT-346 | Transistors |
| 2SA1162 Buy | 2SA812A Buy | NEC Electronics | Transistor for Low-Frequency Small-Signal Amplification - S-Mini - SOT-346 | Transistors |
| 2SA1162 Buy | 2SB0709A Buy | Panasonic (Matsushita) | Transistor for Low-Frequency Small-Signal Amplification - S-Mini - SOT-346 | Transistors |
| 2SA1162 Buy | BC856 Buy | KEC | Transistor for Low-Frequency Small-Signal Amplification - S-Mini - SOT-346 | Transistors |
| Part | Similar Part | Notes |
| 2SA1162 Buy | 2N3494 Buy | |
| 2SA1162 Buy | 2SA1022 Buy | |
| 2SA1162 Buy | 2SA1034 Buy | |
| 2SA1162 Buy | 2SA1035 Buy | |
| 2SA1162 Buy | 2SA1122 Buy | |
| 2SA1162 Buy | 2SA1235 Buy | |
| 2SA1162 Buy | 2SA1254 Buy | |
| 2SA1162 Buy | 2SA1311 Buy | |
| 2SA1162 Buy | 2SA1411 Buy | |
| 2SA1162 Buy | 2SA1504 Buy |