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1 - 50 of about 65 for 2SA1015 |
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First line: Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR Silicon Plastic-Encapsulate Abstract: .. 2SA1015-O. PNP Silicon Plastic-Encapsulate Transistor. Features • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 50V • Operating and storage .. datasheet abstract.. |
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First line: 2SA1015 L TOSHIBA Transistor Silicon Epitaxial Type PCT process 2SA1015 L Audio Frequency Amplifier Abstract: .. 2SA1015 L 2003-03-27 1. TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1015 L Audio Frequency Amplifier Applications Low Noise Amplifier Applications. High voltage and .. datasheet abstract.. |
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First line: 2SA1015 L TOSHIBA Transistor Silicon Epitaxial Type PCT process 2SA1015 L Audio Frequency Amplifier Abstract: .. 2SA1015 L 2003-03-27 1. TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1015 L Audio Frequency Amplifier Applications Low Noise Amplifier Applications. • High voltage and .. datasheet abstract.. |
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First line: 2SA1015 TOSHIBA Transistor Silicon Epitaxial Type PCT process 2SA1015 Audio Frequency General Abstract: .. 2SA1015. 2003-03-27 1. TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1015. Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications. • High .. datasheet abstract.. |
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First line: UNISONIC TECHNOLOGIES 2SA1015 FREQUENCY AMPLIFIER TRANSISTOR FEATURES Collector-Emitter Voltage BVCEO=-50V Collector Current Abstract: .. UNISONIC TECHNOLOGIES CO., LTD. 2SA1015 PNP SILICON TRANSISTOR. www.unisonic.com.tw 1of 4. Copyright © 2009 Unisonic Technologies Co., LTD QW-R201-004.C. LOW FREQUENCY PNP AMPLIFIER TRANSISTOR .. datasheet abstract.. |
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First line: SEMICONDUCTOR Shandong Yiguang Electronic Joint stock 2SA1015LT1 EPITAXIAL SILICON TRANSISTOR Package SOT-23 TECHNICAL Abstract: .. 2SA1015. –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1.6. T A = 100°C 25°C – 40°C. –50. –20. –10. –50. –2. –1. –0.5. –0.2. –0.1. 0 –0.4 –0.8 –1.2 –1.6 –2.0. T A = 25°C. –10. –8. –6. –4. –2. 0. I. C. , COLLECTOR CURRENT. mA Fig.1 Grounded emitter .. datasheet abstract.. |
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First line: 2SA1015 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into three Abstract: .. ST 2SA1015. PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain .. datasheet abstract.. |
250.07 Kb |
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First line: 2SA1015 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into three Abstract: .. ST 2SA1015. PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain .. datasheet abstract.. |
230.43 Kb |
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First line: 2SA1015 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into three Abstract: .. ST 2SA1015. PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain .. datasheet abstract.. |
199.3 Kb |
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First line: 2SA1015 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into three Abstract: .. ST 2SA1015. PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain .. datasheet abstract.. |
143.18 Kb |
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First line: Features omponents Marilla Street Chatsworth 2SA1015 Capable 0.4Watts Power Dissipation. Collector-current 0.15A Abstract: .. 2SA1015. PNP Silicon Plastic-Encapsulate Transistor. Features • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 50V • Operating and storage junction .. datasheet abstract.. |
342.33 Kb |
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First line: Type Transistor 2SA1015 Transistors SOT-23 2.9-0.1 0.4-0.1 Unit 2.4-0.1 High voltage high Abstract: .. 2SA1015 .. datasheet abstract.. |
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First line: BL9148 General infrared Remote Control Transmitter Description BL9148 CMOS developed general infrared Abstract: .. 2SA1015. 10K. 2SC1815. 10. TLN105 .. datasheet abstract.. |
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First line: 2SA1015 EPITAXIAL SILICON TRANSISTOR FREQUENCY AMPLIFIER TRANSISTOR FEATURES Collector-Emitter Voltage BVCEO=-50V Collector Abstract: .. UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-004,B LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V .. datasheet abstract.. |
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First line: 2SA1015 EPITAXIAL SILICON TRANSISTOR FREQUENCY AMPLIFIER TRANSISTOR FEATURES Collector-Emitter Voltage BVCEO=-50V Collector Abstract: .. UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-004,A LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V .. datasheet abstract.. |
60.34 Kb |
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First line: COMPONENTS LTD. 2SA1015 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS EPITAXIAL PLANAR TRANSISTOR Description Designed Abstract: .. 2SA1015. DISCRETE SEMICONDUCTORS. R. DC COMPONENTS CO., LTD.. TECHNICAL SPECIFICATIONS OF PNP .. datasheet abstract.. |
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First line: 2SC1815 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into four Abstract: .. complementary type the PNP transistor ST 2SA1015 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx .. datasheet abstract.. |
248.28 Kb |
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First line: 2SC1815 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into four Abstract: .. complementary type the PNP transistor ST 2SA1015 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx .. datasheet abstract.. |
229.17 Kb |
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First line: 2SC1815 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into four Abstract: .. transistor ST 2SA1015 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g. Absolute Maximum .. datasheet abstract.. |
234.23 Kb |
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First line: 2SC1815 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into four Abstract: .. transistor ST 2SA1015 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g. Absolute Maximum .. datasheet abstract.. |
179.67 Kb |
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First line: 2SC1815 EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY TRANSISTOR FEATURES Collector-Emitter Abstract: .. =50V *Collector current up to 150mA * High hFE linearity *complimentary to 2SA1015 TO-92 1 1:EMITTER 2:COLLECTOR 3. BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified .. datasheet abstract.. |
59.92 Kb |
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First line: MDT80P10 USB / UART Features This document specifies RS232C communication protocol Advance-Intelligent UPS. Special Abstract: .. Q4 2SA1015. 1 2 3 4. CN2. 1 2 3 4. CN1 USB-F. R3 510. R1 7.5K. R2 2K. C1 104 50V. C2 104 C3 1uF 25V. Q1. PC817. Q2. PC817. X1 .. datasheet abstract.. |
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First line: HONEY TO-92 Transistors Japan Type Equivalent Table Silicon Epitaxial Planar Transistor To-92 Abstract: .. 2SA871 HN / BC 559 / 9015 2SA1015 HN / BC 557 / 9015 2SA1367 HN / BC 557 / 9015. 2SA873 HN / BC 556 / 9015 2SA1025 HN / BC 556 / 9015 2SA1373 HN / BC 556 / 9015. 2SA874 HN / BC 327 / 8550 2SA1026 HN / BC 556 / 9015 2SA1374 .. datasheet abstract.. |
58.73 Kb |
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First line: UNISONIC TECHNOLOGIES 2SC1815 AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY TRANSISTOR FEATURES Collector-Emitter voltage Abstract: .. * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015. Lead-free: 2SC1815L Halogen-free: 2SC1815G. Ñ ORDERING INFORMATION. Ordering Number Pin Assignment. Normal .. datasheet abstract.. |
205.32 Kb |
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First line: SEMICONDUCTOR Shandong Yiguang Electronic Joint stock 2SC1815LT1 EPITAXIAL SILICON TRANSISTOR Package SOT-23 TECHNICAL Abstract: .. * Complement to 2SA1015 * Collector Current :Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25°C Characteristic Symbol Rating Unit. Collector-Base Voltage Vcbo 60 V. Collector-Emitter Voltage Vceo .. datasheet abstract.. |
178.4 Kb |
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First line: 2SC1815 TOSHIBA Transistor Silicon Epitaxial Type PCT process 2SC1815 Audio Frequency General Abstract: .. Complementary to 2SA1015 O, Y, GR class Maximum Ratings Ta 25°C Characteristics Symbol Rating Unit. Collector-base voltage VCBO 60 V. Collector-emitter voltage VCEO 50 V. Emitter-base voltage .. datasheet abstract.. |
137.9 Kb |
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First line: Micro Commercial Components Small Signal Transistor Cross Reference Group Package SOT-23 PACKAGE Abstract: .. 2SA1015 400 -150 -50 -50 -0.1 -60 70 400 -2 -6 -0.3 -100 -10 80 2SA1015 2SC1815 400 150 60 50 0.1 60 70 700 2 6 0.25 100 10 80 2SC1815 2SC945 400 150 60 50 0.1 60 70 700 1 6 0.3 100 10 150 2SC945 MMBT3904 200 .. datasheet abstract.. |
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First line: UNISONIC TECHNOLOGIES 2SC1815 EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY TRANSISTOR Abstract: .. * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015. TO-92. 1. *Pb-free plating product number: 2SC1815L. ORDERING INFORMATION. Order Number Pin Assignment. Normal .. datasheet abstract.. |
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First line: SC9148 CMOS SC9148A SOP-16 Vcc=2.2 ~5.0V DIP-16 CMOS SC9148A SC9148S SC9148 DIP-16 Abstract: .. 2SA1015. 2SC1815. 10k. 10. 100pF. 100pF. 100pF. 100pF. 100pF. 100pF. 100pF. 100pF. K1~K6. T1~T3. 47μF. TLN105 .. datasheet abstract.. |
269.49 Kb |
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First line: Abstract: .. 2SA1015 -50 -5 -150 400 125 70-240 -6 -2 >80* 4 2SC1815. 2SA1016 -120 -5 -50 400 125. 160-960. -6 -1 110* 2.2 2SC2362. 2SA1017 -120 -5 -50 500 125. 100-560. -6 -1 110* 2.2 2SC2363. 2SA1018 -250 -5 -70 750 150 30 .. datasheet abstract.. |
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First line: Abstract: .. 2SC1815 60 5 150 400 125 70-700 6 2 >80* 2 2SA1015. 2SC1816 100 6 4A 16W Tc=25oC 150 100 2 100 140* 45. 2SC1817 45 4 5A 25W Tc=25oC 150 60 2 100 250* 80. 2SC1818 130 5 7A. 100W. Tc=25oC 150 150 5 7A 7* 400. 2SC1819 .. datasheet abstract.. |
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First line: Silan Semiconductors INFRARED REMOTE CONTROL TRANSMITTER DESCRIPTION SC9148B CMOS developed infrared remote Abstract: .. 2SA1015. 2SC1815. 10k. 10. 100pF. 100pF. 100pF. 100pF. 100pF. 100pF. 100pF. 100pF. KEY MATRIX. K1~K6. T1~T3. 47 .. datasheet abstract.. |
80.42 Kb |
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First line: Small Signal Transistors Reference Guide response continuous market demand enlarging product portfolio Abstract: .. 2SA1015 2N3906 1 2SA1037 BC857B 2 2SA1767 BF421. 2SA1774 BC857BW 2 2SA673 PN2907A 1 2SA733 BC557B 1 2SB1132 STF2907A. 2SB647 STX817 3 2SB709AR BC857B 2 2SC1213 BC337-25 1 2SC1573A .. datasheet abstract.. |
183.27 Kb |
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First line: CXA3176N Amplifier Receiver AFC Supported Description CXA3176N current consumption amplifier which employs Abstract: .. 2SA1015. TOSHIBA CORPORATION Vceo Ic Pc Hfe fc. ‐50 V ‐150 m 400 m 70 to 400 80 M. 21.245 MHz XTAL. NR-18BN. NIHON DEMPA KOGYO CO., LTD. CERAFIL. CFWS450D. MURATA PRODUCTS 450 kHz 1.5 kTM. DISC. CDBC450CX50 .. datasheet abstract.. |
373.75 Kb |
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First line: Silan Semiconductors REMOTE CONTROL DESCRIPTION SC2128C high performance electronic controller Speed control Abstract: .. 2SA1015. 0.1f. -5V. 13 12 NC LORD. 1k. Supply Circuit. Silan Semiconductors SC2128C. HANGZHOU SILAN .. datasheet abstract.. |
519.18 Kb |
13 Pages |
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First line: CXA3176N Amplifier Receiver AFC Supported availability this product please contact sales office. Abstract: .. 2SA1015. TOSHIBA CORPORATION Vceo Ic Pc Hfe fc. ‐50 V ‐150 m 400 m 70 to 400 80 M. 21.245 MHz XTAL. NR-18BN. NIHON DEMPA KOGYO CO., LTD. CERAFIL. CFWS450D. MURATA PRODUCTS 450 kHz 1.5 kTM. DISC. CDBC450CX50 .. datasheet abstract.. |
311.11 Kb |
21 Pages 
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First line: CXA3176N Amplifier Receiver AFC Supported Description CXA3176N current consumption amplifier which employs Abstract: .. 2SA1015. TOSHIBA CORPORATION Vceo Ic Pc Hfe fc. ‐50 V ‐150 m 400 m 70 to 400 80 M. 21.245 MHz XTAL. NR-18BN. NIHON DEMPA KOGYO CO., LTD. CERAFIL. CFWS450D. MURATA PRODUCTS 450 kHz 1.5 kTM. DISC. CDBC450CX50 .. datasheet abstract.. |
313.9 Kb |
21 Pages 
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First line: Silan Semiconductors REMOTE CONTROL DESCRIPTION SC2128A high performance electronic controller Speed control Abstract: .. 2SA1015. 0.1μf. -5V. Supply Circuit. Silan Semiconductors SC2128A. HANGZHOU SILAN .. datasheet abstract.. |
217.07 Kb |
15 Pages |
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First line: Design Example Report Title Specification Application Author Document Number Date Revision Power Abstract: .. 20 1 Q1 PNP Transistor 2SA1015 PNP 21 1 Q3 NPN Transistor 2SC1815 NPN 22 3 R1,R27,R28 47R / 0805. 23 1 R3 200R / 0.5W. 24 1 R4 68K / 0.5W. 25 2 R6,R7 1K / 1206. 26 2 R8,R19 100K / 0805. 27 2 R9,R11 10K / 0805. 28 1 .. datasheet abstract.. |
621.74 Kb |
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First line: Preliminary W62410 CONTROLLER GENERAL DESCRIPTION W62410 chip digital speech signal processor. W62410 Abstract: .. 2SA1015. Real Time Clock Oscillator Circuit 32768 Hz 1000 Ohm. 32768 Hz 10P 10p. OSCIN 25 OSCOP 26 Preliminary W62410. Publication Release Date: April 2000. - 19 - Revision A1. ABSOLUTE MAXIMUM .. datasheet abstract.. |
152.1 Kb |
21 Pages |
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First line: Preliminary W62410 CONTROLLER GENERAL DESCRIPTION W62410 chip digital speech signal processor. W62410 Abstract: .. 2SA1015. Real Time Clock Oscillator Circuit 32768 Hz 1000 Ohm. 32768 Hz 10P 10p. OSCIN 25 OSCOP 26 Preliminary W62410. Publication Release Date: April 2000. - 19 - Revision A1. ABSOLUTE MAXIMUM .. datasheet abstract.. |
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First line: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 Abstract: .. 2SA561 2SA1015 2SA733 2SA562 2SA1027 2SA564A 2SA661 2SA1015 2SA733 2SA566 2SA483 2SA572 2SA673A 2SA841 2SA603 2N3799 2N3251 ECG106 2SA607 2SA547A 2SA620 2SA603 2SA624 2SA703 D41D7 .. datasheet abstract.. |
272.52 Kb |
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First line: CXA3117AN Amplifier M-ary Pagers Description CXA3117AN current consumption amplifier which employs newest Abstract: .. 2SA1015. TOSHIBA CORPORATION Crystal. 21.245MHz XTAL. KSS 2B. KINSEKI, LTD. Resistor. 220. 8 .. datasheet abstract.. |
389.32 Kb |
30 Pages 
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First line: CXA3117AN Amplifier M-ary Pagers Description CXA3117AN current consumption amplifier which employs newest Abstract: .. 2SA1015. TOSHIBA CORPORATION Crystal. 21.245MHz XTAL. KSS 2B. KINSEKI, LTD. Resistor. 220. 8 .. datasheet abstract.. |
324.73 Kb |
30 Pages 
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First line: CXA3179N Amplifier M-ary Pagers AFC Supported Description CXA3179N current consumption amplifier which Abstract: .. 2SA1015. TOSHIBA CORPORATION 21.245 MHz XTAL. NR-18BN. NIHON DEMPA KOGYO CO., LTD. 6.8 P to 45 .. datasheet abstract.. |
441.26 Kb |
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First line: CXA3117N Amplifier M-ary Pagers Description CXA3117N current consumption amplifier which employs newest Abstract: .. 2SA1015. TOSHIBA CORPORATION Crystal. 21.245MHz XTAL. KSS 2B. KINSEKI, LTD. Resistor. 220. 8 .. datasheet abstract.. |
492.79 Kb |
30 Pages 
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First line: CXA3179N Amplifier M-ary Pagers AFC Supported availability this product please contact sales Abstract: .. 2SA1015. TOSHIBA CORPORATION 21.245 MHz XTAL. NR-18BN. NIHON DEMPA KOGYO CO., LTD. 6.8 P to 45 .. datasheet abstract.. |
367.11 Kb |
27 Pages 
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First line: CXA3117N Amplifier M-ary Pagers availability this product please contact sales office. Description Abstract: .. 2SA1015. TOSHIBA CORPORATION Crystal. 21.245MHz XTAL. KSS 2B. KINSEKI, LTD. Resistor. 220. 8 .. datasheet abstract.. |
384.92 Kb |
30 Pages 
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First line: CXA3117AN Amplifier M-ary Pagers availability this product please contact sales office. Description Abstract: .. 2SA1015. TOSHIBA CORPORATION Crystal. 21.245MHz XTAL. KSS 2B. KINSEKI, LTD. Resistor. 220. 8 .. datasheet abstract.. |
384.25 Kb |
30 Pages 
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First line: CXA3179N Amplifier M-ary Pagers AFC Supported Description CXA3179N current consumption amplifier which Abstract: .. 2SA1015. TOSHIBA CORPORATION 21.245 MHz XTAL. NR-18BN. NIHON DEMPA KOGYO CO., LTD. 6.8 P to 45 .. datasheet abstract.. |
370.06 Kb |
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