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Part : 2N930A Supplier : Motorola Manufacturer : Bristol Electronics Stock : 20 Best Price : $1.2188 Price Each : $1.8750
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2N930A Datasheet

Part Manufacturer Description PDF Type
2N930A Central Semiconductor NPN Silicon Transistor Original
2N930A Continental Device India NPN SILICON PLANAR TRANSISTORS, Low Noise, TO-18 Original
2N930A Semelab Bipolar NPN Silicon Amplifier Transistors - Pol=NPN / Pkg=TO18 / Vceo=45 / Ic=30m / Hfe=150m / fT(Hz)=45M / Pwr(W)= Original
2N930A Boca Semiconductor Amplifier Transistor NPN Scan
2N930A Central Semiconductor BJT: NPN: Amplifier Transistor: IC 0.03A Scan
2N930A Central Semiconductor NPN METAL-CAN SATURATED SWITCH / LOW NOISE LEVEL AMPLIFIER Scan
2N930A Crimson Semiconductor Transistor Selection Guide Scan
2N930A General Diode Transistor Selection Guide Scan
2N930A Micro Electronics Semiconductor Device Data Book Scan
2N930A Micro Electronics Semiconductor Devices Scan
2N930A Motorola Motorola Semiconductor Datasheet Library Scan
2N930A Motorola Low Level and General Purpose Amplifiers Scan
2N930A N/A Transistor Shortform Datasheet & Cross References Scan
2N930A N/A Basic Transistor and Cross Reference Specification Scan
2N930A N/A Shortform Transistor PDF Datasheet Scan
2N930A N/A Catalog Scans - Shortform Datasheet Scan
2N930A N/A Shortform Data and Cross References (Misc Datasheets) Scan
2N930A N/A Shortform Transistor Datasheet Guide Scan
2N930A N/A Vintage Transistor Datasheets Scan
2N930A N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
Showing first 20 results.

2N930A

Catalog Datasheet MFG & Type PDF Document Tags

2N930

Abstract: Symbol VCEO VCBO vebo 2N930 45 45 5.0 30 2N930A 45 60 6.0 Unit Vdc Vdc Vdc m A dc W m W /T W , = 0) C o lle ctor C u to ff C urrent (V c b = 45 Vdc, V b e = 0) 2N930 2N930A 2N930 2N930A 2N930 2N930A 2N930 2N930A 2N930 2N930A v {BR)CEO v (BR)CBO v (BR)EBO 45 45 60 5.0 6.0 - - Vdc Vdc , IV e b = 5 0 Vdc, lc - 0) O N CHARACTERISTICS DC C u rrent Gain 2N930 2N930A hFE 2N930A 60 , = 5-0 Vdc, T a 55X ) 300 2N930 2N930A 2N930 2N930A 2N930 2N930A 20 30 150 - - -
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2N930

Abstract: 2N930A SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO 2N930 45 2N930A 60 UNIT , SYMBOL TEST CONDITION *VCEO IC=10mA, IB=0 Collector Emitter Voltage 2N930 >45 2N930A >60 , Limited Data Sheet Page 1 of 4 NPN SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can , Cob hib hrb hfe hob NF TEST CONDITION IC=500µA,VCE=5V, f=30MHz 2N930 2N930A VCB=5V, IE
Continental Device India
Original
C-120 281102E

2N930

Abstract: 2N930A PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO 2N930 45 2N930A 60 UNIT V , CONDITION *VCEO IC=10mA, IB=0 Collector Emitter Voltage 2N930 >45 2N930A >60 UNIT V V , Sheet Page 1 of 4 NPN SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can Package , hrb hfe hob NF TEST CONDITION IC=500µA,VCE=5V, f=30MHz 2N930 2N930A VCB=5V, IE=0, f
Continental Device India
Original
ISO/TS16949

2n930

Abstract: 2N930 Motorola 2N930, A 2N930 45 45 5.0 30 0.5 3.33 1.2 6.9 - 65 to 175 2N930A 45 60 6.0 Unit Vdc Vdc Vdc m Adc W , C u to ff C urrent IVCB " 45 Vdc, V be = 0) 2N930 2N930A TA = 170"CI 2N930 2N930A ebo 2N930 2N930A - - 10 2.0 2N930 2N930A 'CES - - - - 10 2.0 /tA d c (Vc e = 45 Vdc, V be = E m itter C utoff C , = 1.0/itAdc, V ce ~ 5.0 Vdcl d c = 10 ¿íAdc, V ce = 5.0 Vdc, TA - 55'C) 2N930 2N930A 2N930 2N930A 2N930 2N930A 20 30 150 - - | Symbol | M in | M ax | Unit v |BR|CEO 2N930
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2N930 Motorola
Abstract: 2N930A Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. class="hl">2N930A HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N930A at our online store! 2N930A Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N930A Information Did you Know , Parts Request a Quote Test Houses 2N930A Specifications Military/High-Rel : N V(BR)CEO (V) : 45 V(BR American Microsemiconductor
Original
STV3208 LM3909N LM3909 1N4510 2N1711

2N930

Abstract: 2N930A Boca Semiconductor Corp. (BSC) Rating Symbol 2N930 2N930A Unit Collector-Emitter Voltage VCEO , Breakdown Voltage (lc = 10 jiAdc, l£ = 0) 2N930 2N930A V(br)cbo 45 60 â'" Vdc Emitter-Base Breakdown Voltage (lE = 10 /tAdc, lc = 0) 2N930 2N930A V(BR)EBO 5.0 6.0 - Vdc Collector Cutoff Current IVrc = 5.0 Vdc. Ir = 0) 'ceo â'" 2.0 nAdc Collector Cutoff Current (VCB = 45 vdc- >E = 2N930 2N930A icbo - 10 2.0 nAdc Collector Cutoff Current (VCB = 45 Vdc- VBE ~ 0) 2N930 2N930A ices - 10 2.0 nAdc Ade (Vce =
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Abstract: SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO 2N930 45 2N930A 60 UNIT , SYMBOL TEST CONDITION *VCEO IC=10mA, IB=0 Collector Emitter Voltage 2N930 >45 2N930A >60 , Limited Data Sheet Page 1 of 4 NPN SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can , Cob hib hrb hfe hob NF TEST CONDITION IC=500µA,VCE=5V, f=30MHz 2N930 2N930A VCB=5V, IE Continental Device India
Original

2N930

Abstract: transistor 45 f 122 Datasheet 2N930 wVliiill 2N930A Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA NPN SILICON TRANSISTOR Tel: (631) 435-1110 â'¢ Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N930,2N930A types are , applications. MAXIMUM RATINGS: (TA=25eC) SYMBOL 2N930 2N930A UNITS Collector-Base Voltage vCBO 45 , noted) 2N930 2N930A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS 'CBO VCB=45V 10 2.0 nA
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transistor 45 f 122 TQ-18

2N930A

Abstract: 2N930A ^IP NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL NPN TRANSISTORS â'¢ LOW LEAKAGE â'¢ HIGH CURRENT GAIN â'¢ LOW SATURATION VOLTAGE NPN AMPLIFIER TRANSISTOR MAXIMUM RATINGS RATINGS SYMBOL 2N930A UNITS Collector-Emitter Voltage VCEO 45 Vdc Collector-Base Voltage VcBO 60 Vdc Emitter-Base Voltage Vebo 6.0 Vdc Collector Current â'" Continuous k 30 mAdc Total Power Dissipation @ Tc = , 01841 FAX: (978)689-0803 T4-4.8-860-347 REV: - 2N930A ^MW ^NEW ENGLAND SEMICONDUCTOR ELECTRICAL
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2N930A

Abstract: 2N930A BIPOLAR NPN SILICON AMPLIFIER TRANSISTORS MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) FEATURES 5.33 (0.210) 4.32 (0.170) · SILICON PLANAR EPITAXIAL NPN TRANSISTOR 12.7 (0.500) min. · HERMETICALLY SEALED METAL PACKAGE , AVAILABLE 2.54 (0.100) Nom. 3 1 2 APPLICATIONS: TO18 (TO-206AA) PACKAGE The 2N930A is , ://www.semelab.co.uk Document Number 5470 Issue 1 2N930A ELECTRICAL CHARACTERISTICS (TA = 25°C unless
Semelab
Original
Abstract: ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL 2N930 2N930A , mW mW/ºC W mW/ºC ºC 2N930A MIN MAX 60 UNIT V 45 60 V 5.0 6.0 V , =-55ºC 2N930 MIN MAX 2N930A MIN MAX 100 20 60 100 30 300 UNIT 300 DYNAMIC , . Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com 2N930_ARev280701 Continental Device India
Original

D 1398 Transistor

Abstract: k 1398 Transistor SIZE DWG. NO. ELECTRONIC FILE REV A SCALE: NTS 2N930A U.O.M.: Millimeters 35C 0743.D W G , SIZE D W G . N O . E LE C TR O N IC FILE R E V A DOC. NO. S P C -F0 05 2N930A N TS U.O
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D 1398 Transistor k 1398 Transistor LB 121 NPN TRANSISTOR transistor AS 431 PC-F005 35C0743 SPC--F005

2n706 transistor

Abstract: transistor 2n706 NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 PACKAGE DEVICE TYPE VcEO (sus) VOLTS Ic (max) AMPS h FE @ Ic/ VCE min/max @ mA/V VcE(iat) @IC/IB V@ mA/mA P fr (MHz) TO-18 T0206AA 2N706 15 0.05 20@10/1 0.6@10/1 6 200 2N708 15 - 30-120@10/l 0.4@10/1 6 300 2N718 40h 0.5 40/120@150/10 1.5@150/15 35 50 2N718AA 50 0.5 40/120@150/10 1.5@150/15 25 60 2N720A 80 - 40/120@150/10 5.0@ 150/5 15 50 2N930A 45 0.03 150@0.5/5 1.0@ 10/0.5 8 30 2N2221 30 0.8 40/120@150/10 0.4@150/15 8 250
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2N2222AA 2n706 transistor transistor 2n706 2n2222 2n2222 jan 03150 transistor 2N2221AA 2N2222 2N2368 2N2369 2N2369A
Abstract: 2N930A Transistors Si NPN Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)30m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)2.0n @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)10m @I(B) (A) (Test Condition)500u h(FE) Min. Current gain.100 h(FE) Max. Current gain.300 @I(C) (A) (Test Condition)10u @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq @I(C) (A) (Test Condition) @V(CE) (V American Microsemiconductor
Original
Abstract: 2N930A Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 ­ Emitter 2 ­ Base 3 ­ Collector Parameter VCEO* IC(CONT Semelab
Original
Abstract: 2N930A Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 ­ Emitter 2 ­ Base 3 ­ Collector Parameter VCEO* IC(CONT Semelab
Original

2n706 transistor

Abstract: 2n2222 jan \ 2N718 2N718AA 2N720A 2N930A 2N2221 2N2221AA 2N2222 2N2222AA 2N2368 2N2369 2N2369A 2N3227 2N2432A
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2N706 JAN 2N2432AA
Abstract: 2N930A Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 ­ Emitter 2 ­ Base 3 ­ Collector Parameter VCEO* IC(CONT Semelab
Original

transistor 2N929

Abstract: 2C5088 NOTOROLA SC {DIODES/OPTO* 34 ÏF|bBb7ESS 0 0 3 7 ^ 1 f 6367255 MOTOROLA SC ( D I O D E S /OPTO) ' 34C 37999 7 " D . SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) ~7 DIE NO. - NPN LINE SOURCE: DMB100 This die provides performance similar to that of the following device types: 2N929.A 2N930.A 2N5172 MMCM930 MMT930 MPS929.A MPS930.A MPS5133 MPS5172 MPS6S73 MPS6574 MPS6575 MPS6576 MPSA10 MPSA20 MPSD06 2C5088 General-purpose lownolse amplifier
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transistor 2N929 MPS-A10 SILICON SMALL-SIGNAL DICE SILICON DICE motorola

2N1025

Abstract: 2N328A 100/300 0.01 1.0 10/0.5 30 8 3 15.7* TO-18 2N930A NPN 500 60 45 6 100/300 0.01 0.5 10/0.5 45 6 4 15.7
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2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N1025 2N760

2n930

Abstract: 2N930A 2N930, A M AXIM U M RATINGS R a tin g C o lle cto r-E m itte r V o lta g e C o lle cto r-B ase V olta g e E m itte r-B a se V olta g e C o lle c to r C urrent To tal D evice D issip a tio n @ T a = 25°C D erate a b o v e 25°C To tal D e vice D issip a tio n @ T c = 25°C Derate a b o v e 25°C O p e ra ting and S to ra g e Te m pe ra tu re Te m pe ra tu re Range Sym bol v CEO v CBO v EBO > C Pd Pd T j/ T stg 2N930 45 45 5.0 30 2N930A 45 60 6.0 U n it Vdc Vdc Vdc m Adc W mW/°C W att mW/°C °C
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A-2N930 Q1Q37T3

2N65s

Abstract: 2n907 2N930A Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 ­ Emitter 2 ­ Base 3 ­ Collector Parameter VCEO* IC(CONT
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2N502A 2N554 2N555 2N936 2N511A 2N942 2N65s 2n907 2N797 2N906 2N497AI 2N539 2N696A 2N728 2N871 2N922
Showing first 20 results.