NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: NPN TO-18 BC107A BC107A 2N930 NPN TO-18 BC107B BC107B 2N930 NPN TO-18 BC108 BC108 2N2484 2N2484 NPN TO-18 BC108A BC108A 2N930 NPN TO-18 BC108B BC108B 2N930 NPN TO-18 BC108C BC108C 2N3117 2N3117 NPN TO-18 BC109 BC109 2 N2484 N2484 NPN TO-18 BC109B BC109B 2N930 NPN TO-18 , BC161-16 BC161-16 2N4032 2N4032 PNP TO-39 BC169B BC169B 2N930 NPN TO-18 BC169C BC169C 2N2484 2N2484 NPN TO-18 BC177 BC177 2N2604 2N2604* PNP TO-18 BC177A BC177A , TO-39 BCY33 BCY33 2N328A 2N328A PNP TO-39 BCY34 BCY34 2N329A 2N329A PNP TO-39 BCY56 BCY56 2N930 NPN TO-18 BCY57 BCY57 2 N 2484 NPN TO-18 BCY58 BCY58 2N930 NPN TO-18 BCY58-7 BCY58-7 2N929 2N929 NPN TO-18 BCY58-8 BCY58-8 2N930 NPN TO-18 BCY58-9 BCY58-9 2N 2484 NPN TO-18 ... | OCR Scan |
1 pages, |
BCY18 BC178B bc143 equivalent BC169B equivalent BCY59-9 equivalent bc108 equivalent 2n930 bc109 equivalent bc109b EQUIVALENT BC107 equivalent transistors bc108b equivalent BC107 pnp equivalent bcy90 BC107 2N2484 BC107 abstract |
| Abstract: Boca Semiconductor Corp. (BSC) Rating Symbol 2N930 2N930A Unit Collector-Emitter Voltage VCEO 45 , (lc = 10 jiAdc, l£ = 0) 2N930 2N930A V(br)cbo 45 60 - Vdc Emitter-Base Breakdown Voltage (lE = 10 /tAdc, lc = 0) 2N930 2N930A V(BR)EBO 5.0 6.0 - Vdc Collector Cutoff Current IVrc = 5.0 Vdc. Ir = 0) 'ceo - 2.0 nAdc Collector Cutoff Current (VCB = 45 vdc- >E = 2N930 2N930A icbo - 10 2.0 nAdc Collector Cutoff Current (VCB = 45 Vdc- VBE ~ 0) 2N930 2N930A ices - 10 2.0 nAdc Ade (Vce = 45 Vdc, Vbe = 0 ... | OCR Scan |
4 pages, |
2N930 2N930A 2N930 abstract |
| Abstract: S1' 2N930 2N3548 2N3548 COMPLEMENTARY SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS THE 2N930 (NPN) AND 2N3548 2N3548 (PNP) ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIERS AND DIRECT , RATINGS For p-n-p dev.ces. voltage and current valu« are ne,at,ve. 2N930(NPN) 2N3548 2N3548(PNP) Collector-Base , 3 0 0 3 3 0 3.-3-098483 FAX: 3-410321 - - - Continued - - - PARAMETER SYMBOL 2N930 MIN MAX 2N3548 2N3548 , COMMON BASE h - PARAMETERS (for 2N930 only) h - PARAMETER SYMBOL MIN MAX UNIT TEST_ CONDITIONS Input ... | OCR Scan |
2 pages, |
4500B 2N3548 2N930 2N930 abstract |
| Abstract: I i ) \ ! 2N930 2N3548 2N3548 COMPLEMENTARY SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS THE 2N930 (NPN) AND 2N3548 2N3548 (PNP) ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIERS AND , * 30mA in JEDEC registration. CASE TO-18 CBE 2N930(NPN) 45V 45V 5V 100mA * 300mV 175°C 2N3548 2N3548(PNP) 60V , 2N930 2N354B 2N354B MIN MAX MIN MAX 100 300 100 300 600 60 150 UNIT MHz TEST CONDITIONS Ic«10mA (Pulsed) IB^O , TELEPHONE:- 3-430181-6 FAX; 3-41Q32 3-41Q32Í PARAMETER Small Signal Current Gain Continued - - - SYMBOL hfe 2N930 ... | OCR Scan |
2 pages, |
2N950 2N930 2N3548 2000C 2N5548 2N930 abstract |
| Abstract: 15.7* TO-18 2N929A 2N929A NPN 500 60 45 6 40/120 0.01 0.5 10/0.5 45 6 4 15.7* TO-18 2N930 NPN 300 45 45 5 100/300 0.01 1.0 10/0.5 30 8 3 15.7* TO-18 2N930A NPN 500 60 45 6 100/300 0.01 0.5 10/0.5 45 6 4 15.7* TO-18 2N930B NPN 500 60 45 6 100/300 0.01 0.5 10/0.5 45 6 3 1.0 TO-18 2N1025 2N1025 PNP 250 40 35 40 - - - - , European "Pro Electron" Types Type Near Equivalent Polarity Pkg. BC107 BC107 2N2484 2N2484 NPN TO-18 BC107A BC107A 2N930 NPN TO-18 BC107B BC107B 2N930 NPN TO-18 BC108 BC108 2N2484 2N2484 NPN TO-18 BC108A BC108A 2N930 NPN TO-18 BC108B BC108B 2N930 NPN TO-18 ... | OCR Scan |
2 pages, |
BC178B BCY21 bc143 equivalent bc143 BCY56 BCY59-9 equivalent equivalent to BC177 BCY34 2N328A 2N327A bc108b equivalent BC169 bc160 equivalent 2n930 equivalent 2N327A abstract |
| Abstract: Electron" Types Type Near Equivalent Polarity Pkg. BC107 BC107 2N2484 2N2484 NPN TO-18 BC107A BC107A 2N930 NPN TO-18 BC107B BC107B 2N930 NPN TO-18 BC108 BC108 2N2484 2N2484 NPN TO-18 BC108A BC108A 2N930 NPN TO-18 BC108B BC108B 2N930 NPN TO-18 BC108C BC108C 2N3117 2N3117 NPN TO-18 BC109 BC109 2 N2484 N2484 NPN TO-18 BC109B BC109B 2N930 NPN TO-18 BC109C BC109C 2N3117 2N3117 NPN TO-18 BC140 BC140 2N3019 2N3019 NPN , TO-39 BC161-6 BC161-6 2N4030 2N4030 PNP TO-39 BC161-10 BC161-10 2N4032 2N4032 PNP TO-39 BC161-16 BC161-16 2N4032 2N4032 PNP TO-39 BC169B BC169B 2N930 NPN , 2N329A 2N329A PNP TO-39 BCY56 BCY56 2N930 NPN TO-18 BCY57 BCY57 2 N 2484 NPN TO-18 BCY58 BCY58 2N930 NPN TO-18 BCY58-7 BCY58-7 2N929 2N929 ... | OCR Scan |
2 pages, |
2N3019 2N2900 2N2899 2N2898 2N2897 2N3056A 2904a BCY56 bcy31 BC178B bc143 BC141 equivalent bc109b EQUIVALENT 2N3913 BC109C NPN 2N2897 abstract |
| Abstract: Datasheet 2N930 wVliiill 2N930A Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA NPN SILICON TRANSISTOR Tel: (631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N930,2N930A types are , applications. MAXIMUM RATINGS: (TA=25eC) SYMBOL 2N930 2N930A UNITS Collector-Base Voltage vCBO 45 , ) 2N930 2N930A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS 'CBO VCB=45V 10 2.0 nA 'CES VCE=45V ... | OCR Scan |
2 pages, |
2N930A 2N930 transistor 45 f 122 2N930 abstract |
| Abstract: 2N930_ARev_1 281102E 281102E Continental Device India Limited Data Sheet Page 4 of 4 , SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO 2N930 45 2N930A 60 UNIT , SYMBOL TEST CONDITION *VCEO IC=10mA, IB=0 Collector Emitter Voltage 2N930 >45 2N930A >60 , Sheet Page 1 of 4 NPN SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can Package ... | Original |
4 pages, |
2N930A 2N930 2N930 abstract |
| Abstract: 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com 2N930_ARev_1 281102E 281102E , PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO 2N930 45 2N930A 60 UNIT V , CONDITION *VCEO IC=10mA, IB=0 Collector Emitter Voltage 2N930 >45 2N930A >60 UNIT V V , Page 1 of 4 NPN SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can Package ELECTRICAL ... | Original |
4 pages, |
2N930A 2N930 ISO/TS16949 ISO/TS16949 abstract |
| Abstract: Pkg. BC107 BC107 2N2484 2N2484 NPN TO-18 BC107A BC107A 2N930 NPN TO-18 BC107B BC107B 2N930 NPN TO-18 BC108 BC108 2N2484 2N2484 NPN TO-18 BC108A BC108A 2N930 NPN TO-18 BC108B BC108B 2N930 NPN TO-18 BC108C BC108C 2N3117 2N3117 NPN TO-18 BC109 BC109 2 N2484 N2484 NPN TO-18 BC109B BC109B 2N930 NPN TO-18 BC109C BC109C 2N3117 2N3117 NPN TO-18 BC140 BC140 2N3019 2N3019 NPN TO-39 BC140-6 BC140-6 2N3019 2N3019 NPN TO-39 BC140-10 BC140-10 , 2N4032 2N4032 PNP TO-39 BC161-16 BC161-16 2N4032 2N4032 PNP TO-39 BC169B BC169B 2N930 NPN TO-18 BC169C BC169C 2N2484 2N2484 NPN TO-18 BC177 BC177 , TO-39 BCY32 BCY32 2N329A 2N329A PNP TO-39 BCY33 BCY33 2N328A 2N328A PNP TO-39 BCY34 BCY34 2N329A 2N329A PNP TO-39 BCY56 BCY56 2N930 NPN TO-18 ... | OCR Scan |
2 pages, |
bc143 2N2333 BCY90 BCY56 2N2708 BCY31 2N2944 BC178B BC169C 2N3217 2n3219 BCY34 BCY22 BC109C NPN 2N4260 2N943 T0-18 2N943 abstract |
| Abstract: 2N929 4 2 N 929 • 2 N 930 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: Rauscharme NF-Verstärker Applications: Low noise AF amplifiers Besondere Merkmale: • Besonders rauscharm bei kleinen Kollektorströmen • Rauschmaß < 4 dB Features: • Very low noise at small collector current • Noise figure ... | OCR Scan |
3 pages, |
datasheet abstract |
| Abstract: 929 2N 930 2N 929 2N930 Maximum power dissipation Dissipation de puissance maximale P,o. IW) 11 , 300 Vce = 5V lc = 10 mA h21E* 300 600 Vce = 5V lc =10/uA Tamb = -55°C h21E 2N 929 2N930 10 20 , Ij. =1 mA f = 1 kHz h21e 2N929 2N929 2N930 60 350 150 600 Input impedance Impédance d'entrée Vcb = 5v lE = ... | OCR Scan |
5 pages, |
2N930 2N929 datasheet abstract |
| Abstract: Data Sheet No. 2C2484 2C2484 Generic Packaged Part: Chip Type 2C2484 2C2484 Geometry 0307 Polarity NPN 2N2483 2N2483, 2N2484 2N2484, 2N2920 2N2920, 2N930 Chip type 2C2484 2C2484 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high speed switching applications. Part Numbers: Features: · High speed switching capabilities 2N930, 2N2483 2N2483, 2N2484 2N2484, 2N2920 2N2920 Mechanical Specifications Metallization Bonding Pad Size Top Backside Emitter Base ... | Original |
1 pages, |
2N2484 2C2484 2N2920 2N930 2N2483 2C2484 abstract |
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| No abstract text available www.datasheetarchive.com/download/93075245-673054ZC/2n930.jpg |
User Photos | 23/05/2012 | 5.71 Kb | JPG | 2n930.jpg |
| No abstract text available www.datasheetarchive.com/download/13173497-673055ZC/2n930b.jpg |
User Photos | 23/05/2012 | 5.73 Kb | JPG | 2n930b.jpg |
| 2N930 2N930A CHANGE FROM CLASS 3 MAC210-008 MAC210-008 MAC210-008 MAC210-008 MJD112-001 MJD112-001 MJD112-001 MJD112-001 MJD31C1 MJD31C1 MJD31C1 MJD31C1 www.datasheetarchive.com/files/motorola/design-n/price/pricequi/pric_106.htm |
Motorola | 25/11/1996 | 4.22 Kb | HTM | pric_106.htm |
| ,2,3 .PARAM QMPSA16 QMPSA16 QMPSA16 QMPSA16 File:Mcebjt.lib *Si 1.2W 45V 30mA 60MHz Amp pkg:TO-18 3,2,1 .PARAM Q2N930 File:Mcebjt.lib *Si 1.2W 45V 30mA 90MHz Amp pkg:TO-18 3,2,1 .PARAM Q2N930A File:Mcebjt.lib *Si 1.2W 80V 500mA 90 www.datasheetarchive.com/files/spicemodels/misc/models/npn.mod |
Spice Models | 17/09/2010 | 4.65 Kb | MOD | npn.mod |
| ,2,1 .PARAM Q2N930 File:Mcebjt.lib *Si 1.2W 45V 30mA 90MHz Amp pkg:TO-18 3,2,1 .PARAM Q2N930A File:Mcebjt.lib *Si 1.2W 80V 500mA 90MHz GenPurp pkg:TO-39 3 www.datasheetarchive.com/files/spicemodels/misc/models/npn2.mod |
Spice Models | 17/09/2010 | 5.11 Kb | MOD | npn2.mod |
| .3 MJC=0.3 TF=1.06N TR=737N) *2N930 MCE 5-20-97 *Ref: Motorola Small-Signal Device Databook, Q4/94 Q4/94 Q4/94 Q4/94 *Si 1.2W 45V 30mA 60MHz Amp pkg:TO-18 3,2,1 .MODEL 2N930 NPN (IS=3.05F NF=1 BF=390 VAF=121 IKF=18M .5 CJC=3.36P VJC=0.3 MJC=0.3 TF=2.65N TR=1.84U) *2N930A MCE 5-20-97 *Ref: Motorola Small-Signal Device Databook, Q4/94 Q4/94 Q4/94 Q4/94 *Si 1.2W 45V 30mA 90MHz Amp pkg:TO-18 3,2,1 .MODEL 2N930A NPN (IS=3.05F NF=1 BF www.datasheetarchive.com/files/spicemodels/misc/models/mcebjt.lib |
Spice Models | 17/09/2010 | 51.12 Kb | LIB | mcebjt.lib |
| *= *Copyright (c) 1997 MicroCode Engineering, Inc. *All Rights Reserved *= *= *NPN Trans Pinout: C,B,E *= *NPN *Default NPN BJT pkg:TO-92B 1,2,3 .MODEL NPN~ NPN() *QNPN *pkg:TO-92B 1,2,3 .MODEL QNPN NPN(IS=3.2E-16 2E-16 2E-16 2E-16 BF=141 VAF=35 ISE=2.6 NE=1.46 CJE=1E-13 1E-13 1E-13 1E-13 + MJE=0.333 TF=6E-11 6E-11 6E-11 6E-11 CJC=1E-13 1E-13 1E-13 1E-13 CJS=2.2E-13 2E-13 2E-13 2E-13 MJS www.datasheetarchive.com/files/spicemodels/misc/modelos/mcebjt.lib |
Spice Models | 21/02/2008 | 197.99 Kb | LIB | mcebjt.lib |
| ,1,3 .PARAM QPZT651T1 QPZT651T1 QPZT651T1 QPZT651T1 File:Mcebjt.lib *Si 1.2W 45V 30mA 60MHz Amp pkg:TO-18 3,2,1 .PARAM Q2N930 File:Mcebjt.lib *Si 1.2W 45V 30mA 90MHz Amp pkg:TO-18 3,2,1 .PARAM Q2N930A File:Mcebjt.lib *Si 1.2W 80V 500mA 90 www.datasheetarchive.com/files/spicemodels/misc/modelos/npn.mod |
Spice Models | 21/02/2008 | 40.8 Kb | MOD | npn.mod |
| *$ model description: "awb2n1613" *b Device model created by analog_uprev for 2n1613 on Fri Feb 2 18:03:16 IST 2001 .subckt awb2n1613 C B E + params: + IC_VBE=1.10250E-36 10250E-36 10250E-36 10250E-36 + IC_VCE=1.10250E-36 10250E-36 10250E-36 10250E-36 + STATE=1 + TEMP=0 + AREA=1 + STATE_FACTOR=0 + IS=3.567E-14 567E-14 567E-14 567E-14 + BF=9.684E+01 + NF=1.000E+00 + VAF=2.150E+02 + IKF=1.000E+01 + ISE=5.191E-15 191E-15 191E-15 191E-15 + NE=1.160E+00 + BR=1.236E+01 + NR=1.000E+00 + VAR=3.923E+01 + IKR=1.474E-01 474E-01 474E-01 474E-01 + ISC=6.614E-13 614E-13 614E-13 614E-13 + NC=1.256E+00 + RB=0.000E+00 + IRB=9.463E-04 463E-04 463E-04 463E-04 + RE= www.datasheetarchive.com/files/spicemodels/misc/bjn.lib |
Spice Models | 18/06/2008 | 1165.77 Kb | LIB | bjn.lib |
| 2 3 VALUE=0.033 A 1475 1010 13 0 2 3 REFDES=C39 C 930 1 1 1 C 929 4 2 2 N 930 J 1450 1040 2 J www.datasheetarchive.com/download/9477717-9295ZC/970c2vl.zip (LCOSTP2.1) |
AMD | 21/07/1998 | 86.35 Kb | ZIP | 970c2vl.zip |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2N930 | N/A | Silicon NPN | ||
| 2N930 | N/A | Low Power, Low Noise, General Purpose | ||
| 2N930-46 | N/A | Low Power, Low Noise, General Purpose | ||
| 2N930/51 | N/A | Si NPN Lo-Pwr BJT | ||
| 2N930-51 | N/A | Low Power, Low Noise, General Purpose | ||
| 2N930A | N/A | Low Power, Low Noise, General Purpose | ||
| 2N930A-46 | N/A | Low Power, Low Noise, General Purpose | ||
| 2N930A/51 | Transitron Electronic Corp. | Si NPN Lo-Pwr BJT | ||
| 2N930A-51 | N/A | Low Power, Low Noise, General Purpose | ||
| 2N930(A,B) | N/A | Silicon NPN |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| PN2484 | PN2484 Buy | 2N930 Buy | ON Semiconductor | Close | Small Signal | NPN General Purpose Amplifier |
| PN2484 | PN2484 Buy | 2N930A Buy | ON Semiconductor | Close | Small Signal | NPN General Purpose Amplifier |
| PN2484 | PN2484 Buy | 2N930B Buy | ON Semiconductor | Close | Small Signal | NPN General Purpose Amplifier |
| NTE Electronics Part | Industry Part |
| NTE123A Buy | 2N930 Buy |
| NTE123A Buy | 2N930A Buy |
| NTE123AP Buy | 2N930/46 Buy |
| NTE123AP Buy | 2N930/TNT Buy |
| NTE123AP Buy | 2N930A/46 Buy |
| NTE123AP Buy | 2N930B Buy |
| NTE287 Buy | 2N930/KVT Buy |
| Part | Similar Part | Notes |
| 2N930 Buy | 2N1247 Buy | |
| 2N930 Buy | 2N1248 Buy | |
| 2N930 Buy | 2N1249 Buy | |
| 2N930 Buy | 2N1586 Buy | |
| 2N930 Buy | 2N1587 Buy | |
| 2N930 Buy | 2N1588 Buy | |
| 2N930 Buy | 2N1589 Buy | |
| 2N930 Buy | 2N1590 Buy | |
| 2N930 Buy | 2N1591 Buy | |
| 2N930 Buy | 2N1592 Buy |