Datasheet Search Results			1 - 50 of about 113 for 2N930
	2N930	Advanced Semiconductor, Inc.	Silicon Transistor Selection Guide	384.32 Kb,  5 Pages.
	2N930	Bharat Electronics Ltd	Transistor Selection Guide	56.27 Kb,  1 Pages.
	2N930	Boca Semiconductor	Amplifier Transistor NPN	142.25 Kb,  4 Pages.
	2N930	Central Semiconductor	NPN METAL-CAN SATURATED SWITCH / LOW NOISE LEVEL AMPLIFIER	324.01 Kb,  3 Pages.
	2N930	Central Semiconductor	BJT: NPN: Amplifier Transistor: IC 0.03A	85.13 Kb,  2 Pages.
	2N930	Continental Device India Limited	Semiconductor Device Data Book 1996	97.02 Kb,  1 Pages.
	2N930	Crimson Semiconductor	Transistor Selection Guide	41.53 Kb,  1 Pages.
	2N930	Dionics, Inc.	Transistor Chips	64.58 Kb,  1 Pages.
	2N930	Fairchild Semiconductor	Misc. Data Book Scans 1975/76	68.17 Kb,  2 Pages.
	2N930	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	48.4 Kb,  1 Pages.
	2N930	Ferranti Semiconductors	Quick Reference Guide 1985	148.31 Kb,  4 Pages.
	2N930	Ferranti Semiconductors	Metal Can Transistors (Short Form)	123.69 Kb,  4 Pages.
	2N930	Ferranti Semiconductors	Shortform Data Book 1971	94.46 Kb,  2 Pages.
	2N930	General Diode	Transistor Selection Guide	594.42 Kb,  10 Pages.
	2N930	General Electric	Semiconductor Data Book 1971	274.87 Kb,  1 Pages.
	2N930	General Transistor Corp.	Small Signal Transistor Selection Guide	351.91 Kb,  4 Pages.
	2N930	ITT Semiconductors	Semiconductor Summary 1969	67.85 Kb,  1 Pages.
	2N930	Micro Electronics	Semiconductor Devices	87.95 Kb,  1 Pages.
	2N930	Micro Electronics	Semiconductor Device Data Book	58.31 Kb,  1 Pages.
	2N930	Micro Electronics	SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS - Pol=NPN / Pkg=TO18 / Vceo=45 / Ic=30m / Hfe=100-300 / fT(Hz)=30M / Pwr(W)=0.3	148.33 Kb,  2 Pages.
	2N930	Microsemi Corporation	NPN Low Power Silicon Transistor	51.63 Kb,  2 Pages.
	2N930	Motorola	European Master Selection Guide 1986	39.56 Kb,  1 Pages.
	2N930	Motorola	The European Selection Data Book 1976	64.97 Kb,  2 Pages.
	2N930	Motorola / Freescale Semiconductor	Power Transistor Selection Guide	317.49 Kb,  6 Pages.
	2N930	Motorola / Freescale Semiconductor	Low Level and General Purpose Amplifiers	112.71 Kb,  1 Pages.
	2N930	National Semiconductor	Low Level Amplifiers	137.53 Kb,  4 Pages.
	2N930	National Semiconductor	General Purpose Amplifiers and Switches	49.42 Kb,  1 Pages.
	2N930	National Semiconductor	NPN General Purpose Transistors	53.55 Kb,  1 Pages.
	2N930	National Semiconductor	NPN Transistors	666.62 Kb,  17 Pages.
	2N930	National Semiconductor	Low Noise Amplifiers	261 Kb,  4 Pages.
	2N930	New England Semiconductor	SMALL SIGNAL NPN TRANSISTOR TO-18	28.13 Kb,  1 Pages.
	2N930	Newmarket Transistors Ltd (NKT)	Product Portfolio 1972/73	37.85 Kb,  1 Pages.
	2N930	Philips Semiconductors / NXP Semiconductors	N-P-N SILICON PLANAR TRANSISTOR	55.86 Kb,  3 Pages.
	2N930	Philips Semiconductors / NXP Semiconductors	NPN Silicon Planar Transistor	56.72 Kb,  3 Pages.
	2N930	Raytheon Company	Selection Guide 1977	132.78 Kb,  3 Pages.
	2N930	Semelab	Bipolar Transistors (CECC and High Rel) & High Energy	82.8 Kb,  1 Pages.
	2N930	Semelab	Transistor Selection Guide	214.08 Kb,  2 Pages.
	2N930	Semelab	Low Frequency Silicon Power NPN Transistor	49.88 Kb,  1 Pages.
	2N930	Semelab	Bipolar NPN Silicon Amplifier Transistors - Pol=NPN / Pkg=TO18 / Vceo=45 / Ic=30m / Hfe=100-300 / fT(Hz)=30M / Pwr(W)=0.3	17.02 Kb,  2 Pages.
	2N930	Semicoa Semiconductor	PNP Silicon Power Transistors / Low Level Amplifiers	194.73 Kb,  1 Pages.
	2N930	Semicoa Semiconductor	Chip Type 2C2484 Geometry 0307 Polarity NPN - Pol=NPN / Pkg=TO18 / Vceo=45 / Ic=30m / Hfe=100-300 / fT(Hz)=30M / Pwr(W)=0.3	29.74 Kb,  1 Pages.
	2N930	Semiconductors, Inc.	Audio Frequency Small Signal Transistors	646.86 Kb,  7 Pages.
	2N930	Semitronics Corp.	Metal Can Transistors - Silicon Small Signal Transistors	329.43 Kb,  4 Pages.
	2N930	SGS-Ates	Small Signal Transistors 3rd Edition 1978	227.22 Kb,  2 Pages.
	2N930	SGS-Ates	Shortform Data Book 1977/78	28.16 Kb,  1 Pages.
	2N930	STMicroelectronics	Shortform Data Book 1988	36.58 Kb,  1 Pages.
	2N930	STMicroelectronics	LOW-LEVEL, LOW-NOISE AMPLFIERS - Pol=NPN / Pkg=TO18 / Vceo=45 / Ic=30m / Hfe=100-300 / fT(Hz)=30M / Pwr(W)=0.3	41.25 Kb,  2 Pages.
	2N930	Telefunken Electronic	Electronic Component Data Book 1976	71.72 Kb,  1 Pages.
	2N930	Telefunken Electronic	Low Power Transistor Data Book 1977	54.35 Kb,  3 Pages.
	2N930	Texas Instruments	Discrete Devices 1978	140.08 Kb,  2 Pages.
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Fulltext Datasheet Results		1 - 50 of about 290 for 2N930
	First line: 2n930 equivalent� BC169C equivalent BCY18 2n3019 equivalent bcy90 Discrete Devices European "Pro Electron" Types Type Near Equivalent Polarity Pkg. BC107 2N2484 TO-18 BC107A 2N930 TO-18 BC107B 2N930 TO-18 BC108 2N2484 TO-18 BC108A 2N930 TO-18 BC108B 2N930 TO-18 Abstract: .. BC107 BC107 2N2484 2N2484 NPN TO-18 TO-18 BC107A BC107A 2N930 NPN TO-18 TO-18 BC107B BC107B 2N930 NPN TO-18 TO-18 BC108 BC108 2N2484 2N2484 NPN TO-18 TO-18 BC108A BC108A 2N930 NPN TO-18 TO-18 BC108B BC108B 2N930 NPN TO-18 TO-18 BC108C BC108C 2N3117 2N3117 NPN TO-18 TO-18 BC109 BC109 2 N2484 N2484 NPN TO-18 TO-18 BC109B BC109B 2N930 ..  Tags: bcy90 2n3019 equivalent BCY18 BC169C equivalent 2n930 equivalent   datasheet abstract..	67.9 Kb	1 Pages	OCR Scan
	First line: Boca Semiconductor Corp. (BSC) Rating Symbol 2N930 2N930A Unit Collector-Emitter Voltage VCEO Collector-Base Voltage VCBO Emitter-Base Voltage Vebo Collector Current mAdc Total Device Dissipation Derate above 3.33 Total Device Dissipation 25"C Derate above Watt Operating Storage Temperature Tem Abstract: .. Boca Semiconductor Corp. BSC Rating Symbol 2N930 2N930A Unit Collector-Emitter Voltage VCEO 45 45 Vdc Collector-Base Voltage VCBO 45 60 Vdc Emitter-Base Voltage Vebo 5.0 6.0 Vdc Collector ..  Tags:   datasheet abstract..	160.83 Kb	4 Pages	OCR Scan
	First line: Data Sheet 2C2484 Chip Type 2C2484 Geometry 0307 Polarity Generic Packaged Part: 2N2483, 2N2484, 2N2920, 2N930 Chip type 2C2484 Semicoa Semiconductors provides performance similar these devices. Abstract: .. 2N2483 2N2483 , 2N2484 2N2484 , 2N2920 2N2920 , 2N930. Chip type 2C2484 2C2484 by Semicoa Semi-conductors provides performance similar to these devices. Product Summary: Part Numbers: 2N930, 2N2483 2N2483 , 2N2484 2N2484 , 2N2920 2N2920 . APPLICATIONS ..  Tags: lexan 244r  2n930 equivalent  2n2484*  2n2483   2N2483 2N2484 2N2920 2N930	29.73 Kb	1 Pages	Original
	First line: BC141 equivalent 2N3913 Discrete Devices Transistors (Cont.) Level Amplifiers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts HFE<s VCE<Sat) lC/lB NF@f Min/Max Volts mA/mA 2N327A 9/22 2N327B 9/22 TO-39 2N328A 18/44 TO-39 Abstract: .. .5 30 8 4 15.7* TO-18 TO-18 2N929A 2N929A NPN 500 60 45 6 40/120 0.01 0.5 10/0.5 45 6 4 15.7* TO-18 TO-18 2N930 NPN 300 45 45 5 100/300 0.01 1.0 10/0.5 30 8 3 15.7* TO-18 TO-18 2N930A NPN 500 60 45 6 100/300 0.01 0.5 10/0.5 45 6 4 15.7 ..  Tags: 2N3913 BC141 equivalent   datasheet abstract..	105.56 Kb	2 Pages	OCR Scan
	First line: 2N3910 2N2708 2N915 2N2004* BCY22* Discrete Devices Transistors (Cont.) Choppers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts HFE@ VcEtSat) Ic/lB @>IB rrf@ Min/Max Volts mA/mA Ohms 2N943 10/- T0-18 2N2004 TO-39 2N2333 2.75 TO-18 Abstract: .. BC107 BC107 2N2484 2N2484 NPN TO-18 TO-18 BC107A BC107A 2N930 NPN TO-18 TO-18 BC107B BC107B 2N930 NPN TO-18 TO-18 BC108 BC108 2N2484 2N2484 NPN TO-18 TO-18 BC108A BC108A 2N930 NPN TO-18 TO-18 BC108B BC108B 2N930 NPN TO-18 TO-18 BC108C BC108C 2N3117 2N3117 NPN TO-18 TO-18 BC109 BC109 2 N2484 N2484 NPN TO-18 TO-18 BC109B BC109B 2N930 ..  Tags: BCY22* 2N2004* 2N915 2N2708 2N3910   datasheet abstract..	114.22 Kb	2 Pages	OCR Scan
	First line: Transistors (Cont.) Discrete Devices General Purpose Amplifiers (Cont.) Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts VcE<Sat)@lc/lB Min/Max Volts mA/mA 2N2897 50/200 500/50 TO-18 2N2898 40/120 500/50 T046 2N2899 60/200 500/50 Abstract: .. BC107 BC107 2N2484 2N2484 NPN TO-18 TO-18 BC107A BC107A 2N930 NPN TO-18 TO-18 BC107B BC107B 2N930 NPN TO-18 TO-18 BC108 BC108 2N2484 2N2484 NPN TO-18 TO-18 BC108A BC108A 2N930 NPN TO-18 TO-18 BC108B BC108B 2N930 NPN TO-18 TO-18 BC108C BC108C 2N3117 2N3117 NPN TO-18 TO-18 BC109 BC109 2 N2484 N2484 NPN TO-18 TO-18 BC109B BC109B 2N930 ..  Tags:   datasheet abstract..	113.1 Kb	2 Pages	OCR Scan
	First line: SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Package Abstract: .. NPN SILICON PLANAR TRANSISTORS 2N930. 2N930A. TO-18 TO-18 Metal Can Package. Low Noise Transistors. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N930 UNIT. Collector Emitter Voltage VCEO 45 V. Collector ..  Tags: 2n930 equivalent   2N930 2N930A	178.95 Kb	4 Pages	Original
	First line: 2N930 wVliiill 2N930A Semiconductor Corp. Adams Avenue, Hauppauge, 11788 SILICON TRANSISTOR Tel: (631) 435-1110 Fax: (631) 435-1824 Manufacturers World Class Discrete Semiconductors JEDEC TO-18 CASE CENTRAL SEMICONDUCTOR 2N930,2N930A types Silicon Planar Epitaxial Transistors designed small signal g Abstract: .. Datasheet 2N930 wVliiill 2N930A Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA NPN SILICON TRANSISTOR Tel: 631 435-1110 †� Fax: 631 435-1824 Manufacturers of World Class ..  Tags:   datasheet abstract..	103.63 Kb	2 Pages	OCR Scan
	First line: SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Package Abstract: .. NPN SILICON PLANAR TRANSISTORS 2N930. 2N930A. TO-18 TO-18 Metal Can Package. Low Noise Transistors. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N930 UNIT. Collector Emitter Voltage VCEO 45 V. Collector ..  Tags: 2n930 equivalent   2N930 2N930A	117.5 Kb	4 Pages	Original
	First line: S1' 2N930 2N3548 COMPLEMENTRY SILICON NOISE SMLL SIGNL TRNSISTORS 2N930 (NPN) 2N3548 (PNP) SILICON PLNR EPITXIL TRNSISTORS SMLL SIGNL MPLIFIERS DIRECT COUPLED CIRCUITS. JEDEC registration. TO-18 Abstract: .. S1' 2N930 2N3548 2N3548 COMPLEMENTARY SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS THE 2N930 NPN AND 2N3548 2N3548 PNP ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIERS AND ..  Tags:   datasheet abstract..	166.84 Kb	2 Pages	OCR Scan
	First line: 2N3725 BCY91 2N1026 TRANSISTOR pnp BC140 TRANSISTOR BC140 Discrete Devices Transistors (Cont.) Level Amplifiers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts HFE<s VCE<Sat) lC/lB NF@f Min/Max Volts mA/mA 2N327A 9/22 2N327B 9/22 TO-39 2N328A 18/44 TO Abstract: .. .5 30 8 4 15.7* TO-18 TO-18 2N929A 2N929A NPN 500 60 45 6 40/120 0.01 0.5 10/0.5 45 6 4 15.7* TO-18 TO-18 2N930 NPN 300 45 45 5 100/300 0.01 1.0 10/0.5 30 8 3 15.7* TO-18 TO-18 2N930A NPN 500 60 45 6 100/300 0.01 0.5 10/0.5 45 6 4 15.7 ..  Tags: TRANSISTOR BC140 TRANSISTOR pnp BC140 2N1026 BCY91 2N3725   datasheet abstract..	151.29 Kb	3 Pages	OCR Scan
	First line: bfy76 bc261b BCY91 2N3133 MOTOROLA 2N2237 Discrete Devices Transistors (Cont.) Medium Current, High-Speed Amplifiers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts VcE(Sat)<s>lc/lB tOFF Min/Max Volts mA/mA 2N721A 20/45 150/15 TO-18 2N722A PIMP 30/90 Abstract: .. BC107 BC107 2N2484 2N2484 NPN TO-18 TO-18 BC107A BC107A 2N930 NPN TO-18 TO-18 BC107B BC107B 2N930 NPN TO-18 TO-18 BC108 BC108 2N2484 2N2484 NPN TO-18 TO-18 BC108A BC108A 2N930 NPN TO-18 TO-18 BC108B BC108B 2N930 NPN TO-18 TO-18 BC108C BC108C 2N3117 2N3117 NPN TO-18 TO-18 BC109 BC109 2 N2484 N2484 NPN TO-18 TO-18 BC109B BC109B 2N930 ..  Tags: 2N2237 2N3133 MOTOROLA BCY91 bc261b bfy76   datasheet abstract..	167.86 Kb	3 Pages	OCR Scan
	First line: TRANSISTOR pnp BC140 TRANSISTOR BC140 bc143 BCY91 BCY19 Discrete Devices Transistors (Cont.) Level Amplifiers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts HFE<s VCE<Sat) lC/lB NF@f Min/Max Volts mA/mA 2N327A 9/22 2N327B 9/22 TO-39 2N328A 18/44 TO-3 Abstract: .. .5 30 8 4 15.7* TO-18 TO-18 2N929A 2N929A NPN 500 60 45 6 40/120 0.01 0.5 10/0.5 45 6 4 15.7* TO-18 TO-18 2N930 NPN 300 45 45 5 100/300 0.01 1.0 10/0.5 30 8 3 15.7* TO-18 TO-18 2N930A NPN 500 60 45 6 100/300 0.01 0.5 10/0.5 45 6 4 15.7 ..  Tags: BCY19 BCY91 bc143 TRANSISTOR BC140 TRANSISTOR pnp BC140   datasheet abstract..	193.89 Kb	4 Pages	OCR Scan
	First line: 0031101 SCS-THOMSON 2N930 S-THOMSON _LOW-LEVEL, LOW-NOISE AMPLIFIERS 2N930 silicon planar epitaxial transistor Jedec TO-18 metal case, designed high performance, low-level, low-noise amplifier applications. INTERNAL SCHEMATIC DIAGRAM Abstract: .. 3QE ]> m 7e 2cà �S37 0031101 3 m. SCS-THOMSON 2N930 S Q S-THOMSON _LOW-LEVEL, LOW-NOISE AMPLIFIERS DESCRIPTION The 2N930 is a silicon planar epitaxial NPN transistor in Jedec TO-18 TO-18 metal case, designed ..  Tags:   datasheet abstract..	59.78 Kb	2 Pages	OCR Scan
	First line: 2n930 equivalent 2N930 MECHANICAL DATA Dimensions (inches) BIPOLAR SILICON AMPLIFIER TRANSISTORS Abstract: .. 2N930. BIPOLAR NPN SILICON AMPLIFIER TRANSISTORS. APPLICATIONS: The 2N930 is designed for small general purpose and amplifier applications. VCBO Collector – Base Voltage. VCEO Collector – Emitter ..  Tags: 2n930 equivalent   2N930	17.03 Kb	2 Pages	Original
	First line: PHILIPS INTERNATIONAL 2N930 7^27- 7110flSb 00425^2 N-P-N SILICON PLANAR TRANSISTOR N-P-N transistors TO-18 metal envelopes with collector connected case. These devices primarily intended high performance, low-level, low-noise amplifier applications both direct current frequencies MHz. Abstract: .. PHILIPS INTERNATIONAL V 2N930 7^27- n 5LE D 7110flSb 7110flSb 00425^2 GST Â �PHIN N-P-N SILICON PLANAR TRANSISTOR N-P-N transistors in TO-18 TO-18 metal envelopes with the collector connected to the case. ..  Tags:   datasheet abstract..	74.43 Kb	3 Pages	OCR Scan
	First line: PHILIPS/DISCRETE bbSaiai GGEfiDbS 2N930 N-P-N SILICON PLNR TRNSISTOR N-P-N transistors TO-18 metal envelopes with collector connected case. These devices primarily intended high performance, low-level, low-noise amplifier applications both direct current frequencies MHz. QUICK REFERENCE Collector-ba Abstract: .. N AMER PHILIPS/DISCRETE b �ÃŒE D â– bbSaiai GGEfiDbS â– APX 2N930 A N-P-N SILICON PLANAR TRANSISTOR N-P-N transistors in TO-18 TO-18 metal envelopes with the collector connected to the case. These ..  Tags:   datasheet abstract..	75.28 Kb	3 Pages	OCR Scan
	First line: POWER SILICON TRANSISTOR Qualified MIL-PRF-19500/253 Devices 2N930 Qualified Level JANTX JANTXV Abstract: .. 2N930. JAN JANTX JANTXV. MAXIMUM RATINGS Ratings Symbol Value Units. Collector-Emitter Voltage VCEO 45 Vdc. Collector-Base Voltage VCBO 60 Vdc. Emitter-Base Voltage VEBO 6.0 Vdc. Collector Current ..  Tags:   2N930	45.95 Kb	2 Pages	Original
	First line: POWER SILICON TRANSISTOR Qualified MIL-PRF-19500/253 Devices 2N930 Qualified Level JANTX JANTXV Abstract: .. 2N930. JAN JANTX JANTXV. MAXIMUM RATINGS Ratings Symbol Value Units. Collector-Emitter Voltage VCEO 45 Vdc. Collector-Base Voltage VCBO 60 Vdc. Emitter-Base Voltage VEBO 6.0 Vdc. Collector Current ..  Tags: 2n930 equivalent   2N930	51.63 Kb	2 Pages	Original
	First line: BC107 equivalent transistors bc107 transistor bf241 replacement BC107 2n3019 equivalent Replacement list REPLACEMENT/WITHDRAWAL TYPES following type numbers were previous issue this data handbook, current version: TYPE NUMBER 2N2297 2N2483 2N2904; 2N2904A 2N3020 2N3053 2N3439; 2N3440 2N4030 2N4032 2 Abstract: .. 2N930 Replaced by BC107B BC107B . 2PB1219 2PB1219 Replaced by 2PB1219A 2PB1219A . 2PB709 2PB709 Replaced by 2PB709A 2PB709A . 2PB710 2PB710 Replaced by 2PB710A 2PB710A . 2PC1815L 2PC1815L Replaced by 2PC1815 2PC1815 . 2PD601 2PD601 Replaced by 2PD601A 2PD601A . 2PD602 2PD602 Replaced by 2PD602A 2PD602A ..  Tags: 2n3019 equivalent bf241 bc107 transistor BC107 equivalent transistors transistor BF451  Transistor BC109C*  transistor bc107b  Transistor BC107  transistor 2n4403 datasheet  transistor 2N4033  transistor 2n3053  Transistor 2N2222A  to126  replacement BC107  MPSA44, TO92   2N2297 2N2483 2N2904 2N2904A 2N3020 2N3053 2N3439 2N3440 2N4030 2N4032 2N4123 2N4125 2N4400 2N4402 2N930 2N3019 2N2484 2N2905A 2N4031 2N4033 2N4124 2N4126 2N4401 2N4403 2N2222A	4.03 Kb	1 Pages	Original
	First line: 2N5088 SIMILAR low noise jfet n channel ultra low noise jfet n channel ultra low noise N CHANNEL jfet Low Noise Audio Amplifier AN106 Low-Noise JFETs Superior Performance Bipolars Junction field effect transistors continue outperform best bipolar transistors low-frequency noise source impedances Wit Abstract: .. TA = 25C Bipolar 2N5088 2N5088 /2N930 ‐ VCE = 5 V FET ‐ VDG = 10 V. 10 Hz 100 Hz 1 kHz. J/SST201 SST201 ‐4. 10 Hz. 1 kHz. 100 Hz 2N930. 2N5088 2N5088 . 1 0. 5. 2. 1. 100. 50. 20. 0.01 0.02 0.050.1 0.2 0.5 1 2. AN106 AN106 . 4 Siliconix. 10-Mar-97 10-Mar-97 . The optimum lowest ..  Tags: 2N5088 SIMILAR transistor jfet  power Junction FET  POWER JFET  p jfet  N CHANNEL jfet Low Noise Audio Amplifier  jfet transistor  jfet n channel ultra low noise  JFET application note  J201 equivalent  J201  hearing aid   AN106	50.37 Kb	5 Pages	Original
	First line: SST404* AN106 Low-Noise JFETs Superior Performance Bipolars Junction field effect transistors continue outperform best bipolar transistors low-frequency noise source impedances With higher source impedances, common sensitive transducers, JFET amplifiers exhibit dramatically lower noise figures. Abstract: .. TA = 25C Bipolar 2N5088 2N5088 /2N930 ‐ VCE = 5 V FET ‐ VDG = 10 V. 10 Hz 100 Hz 1 kHz. J/SST201 SST201 ‐4. 10 Hz. 1 kHz. 100 Hz 2N930. 2N508 2N508 8. 1 0. 5. 2. 1. 100. 50. 20. 0.01 0.02 0.050.1 0.2 0.5 1 2. AN106 AN106 . 4 Siliconix. 26-Jul-94 26-Jul-94 . The optimum lowest ..  Tags: SST404* transistor jfet  SST404  power Junction FET  POWER JFET  p jfet  N CHANNEL jfet Low Noise Audio Amplifier  JFET Transistor  jfet n channel ultra low noise  JFET application note  J/SST201  hearing aid   AN106	70.71 Kb	5 Pages	Original
	First line: SST404* AN106 Low-Noise JFETs Superior Performance Bipolars Junction field effect transistors continue outperform best bipolar transistors low-frequency noise source impedances With higher source impedances, common sensitive transducers, JFET amplifiers exhibit dramatically lower noise figures. Abstract: .. TA = 25C Bipolar 2N5088 2N5088 /2N930 ‐ VCE = 5 V FET ‐ VDG = 10 V. 10 Hz 100 Hz 1 kHz. J/SST201 SST201 ‐4. 10 Hz. 1 kHz. 100 Hz 2N930. 2N5088 2N5088 . 1 0. 5. 2. 1. 100. 50. 20. 0.01 0.02 0.050.1 0.2 0.5 1 2. AN106 AN106 . 4 Siliconix. 10-Mar-97 10-Mar-97 . The optimum lowest ..  Tags: SST404* transistor jfet  SST4393*  power Junction FET  POWER JFET  p jfet  N CHANNEL jfet Low Noise Audio Amplifier  JFET Transistor  jfet n channel ultra low noise  hearing aid  datasheet for jfet  2N4339   AN106	71.21 Kb	5 Pages	Original
	First line: TRANSISTR CHIPS Abstract: .. O HIGH GAIN - SMALL SIGNAL NPN 100% Probe Tested to These Parameters @ 25 �C 2N2483 2N2483 2N2484 2N2484 2N930 DN2484 DN2484 hFE @VCE= 5V @lc= 10/iA 40-120 100-500 100-300 150-500 @là � 100/ ImA 75 Min 175 Min 200 Min. @lc ..  Tags:   datasheet abstract..	83.09 Kb	1 Pages	OCR Scan
	First line: 2N65s* 2N967 2N797 TRANSISTOR 2n906 2n907 DIGITRON ELECTRONIC CORP 204EbD7 aOGOOGS DIQITRON CORE T-J.y-01 Page Hillside Avenue Springfield. Jersey 07081 201-379-9016 201-379-9019 201-467-8065 JOHN SCHWARTZ ENGINEERING Abstract: .. 2N876 2N876 2N929 2N929 2N499 2N499 2N540 2N540 2N697A 2N697A 2N730 2N730 2N877 2N877 2N929A 2N929A 2N499A 2N499A 2N540A 2N540A 2N698 2N698 2N731 2N731 2N8 78 2N930 2N501A 2N501A 2NS52 2NS52 2N699 2N699 2N735 2N735 2N879 2N879 2N9 3 0A 2N502 2N502 2N553 2N553 2N699A 2N699A 2N73SA 2N73SA 2N880 2N880 2N930B 2N502A 2N502A 2N554 2N554 2N699B 2N699B 2N736 2N736 ..  Tags: 2n907 TRANSISTOR 2n906 2N797 2N967 2N65s*   datasheet abstract..	69.85 Kb	1 Pages	OCR Scan
	First line: MMCF929, MMCF930 (SILICON) MMCF2484 Flip-Chip silicon Annular transistor family low-level amplifier applications similar 2N929, 2N930 2N2484. Primary Electrical Features: High Current Gain mAdc, (Min) MMCF2484 (Min) MMCF929 Collector-Emitter Saturation Voltage VCE(sat) 0-25 (Max) mAdc FLIP-CHIP SMAL Abstract: .. transistor family for low-level amplifier applications similar to the 2N929 2N929 , 2N930 and 2N2484 2N2484 . Primary Electrical Features: †� High DC Current Gain < �> lc = 1.0 mAdc, VcE = 5-0 vdc - hFE = 200 ..  Tags:   datasheet abstract..	64.74 Kb	2 Pages	OCR Scan
	First line: 2N2475 MICRO-E CHARACTERISTICS MEDIUM CURRENT GENERAL PURPOSE TRANSISTORS p-n- Units BFS38A BFS38 BFS39 BFS40A BFS40 BFS41 Parameter Test Conditions Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. vCBO Rated Max. vCEO(sus) 5mA, vEBCi Rated Max. 'CBO vCB=vCBO Rated Max, 'ebo VEBO Abstract: .. and nearest metal can equivalents n-p-n p-n-p LOW LEVEL AMPLIFICATION BFS36 BFS36 2N930 BFS37 BFS37 2N2605 2N2605 BFS36A BFS36A 2N929 2N929 BFS37A BFS37A 2 N2604 N2604 MEDIUM CURRENT BFS38A BFS38A ZT80 ZT80 BFS40A BFS40A ZT180 ZT180 BFS38 BFS38 ZT82 ZT82 BFS40 BFS40 ZT182 ZT182 BFS39 BFS39 ..  Tags: 2N2475   datasheet abstract..	52.27 Kb	1 Pages	OCR Scan
	First line: MARKING w5 BFS46A* c5v6 2N2475 BS9302 MICRO-E MICRO-E PRODUCT LIST Where approval military been obtained appropriate British Standards number indicated under B.S. number. Transistors Diodes Nearest metal Device E-line Device Type marking equivalent B.S. number* Page Type marking BS/CECC number Page Abstract: .. number* Page Type marking BS/CECC number Page BFS36 BFS36 L1 2N930 BS9365 BS9365 F014 F014 13 BAW63 BAW63 D1 BS9302 BS9302 F001 F001 * 15 BFS36A BFS36A L2 2N929 2N929 BS9365 BS9365 F013 F013 13 BAW63A BAW63A D2 BS9302 BS9302 F002 F002 * 15 BFS37 BFS37 L3 2N2605 2N2605 BS9365 BS9365 F026 F026 13 BAW63B BAW63B ..  Tags: BS9302 2N2475 c5v6 BFS46A* MARKING w5   datasheet abstract..	52.06 Kb	1 Pages	OCR Scan
	First line: 2N930 Description Semicoa Semiconductors offers: Screening processing MIL-PRF-19500 Appendix level (2N930J) JANTX level (2N930JX) JANTXV level (2N930JV) applicable level 100% visual inspection MIL-STD-750 method 2072 JANTXV Radiation testing (total dose) upon request Abstract: .. 2N930. Silicon NPN Transistor. D a t a S h e e t. Description. Semicoa Semiconductors offers .. 2N930. Silicon NPN Transistor. D a t a S h e e t. ELECTRICAL CHARACTERISTICS characteristics ..  Tags:   2N930 2N930J 2N930JX 2N930JV	211.71 Kb	2 Pages	Original
	First line: SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS SILICIUM, PLANAR EPIT.AXIAUX small signal amplif ication (low noise) Amplification petits signaux (faible bruit) Preferred device Dispositif 'CEO "21E Abstract: .. recommandà � 'CEO 45 V "21E 10 nA 40-120 100 - 300 4 dB max 3 dB max 2N 929 2N 930 2N 929 2N930 Maximum power dissipation Dissipation de puissance maximale P,o. IW 11 2 Tambt �> '1> T I" 2 ..  Tags:   datasheet abstract..	110.97 Kb	5 Pages	OCR Scan
	First line: MICRO-E MICRO-E PRODUCT LIST Where approval military been obtained appropriate British Standards number indicated under B.S. number. Transistors Diodes Nearest metal Device E-line Device Type marking equivalent B.S. number* Page Type marking BS/CECC number Page BFS36 2N930 BS9365 F014 BAW63 BS9302 F Abstract: .. Type marking equivalent B.S. number* Page Type marking BS/CECC number Page BFS36 BFS36 L1 2N930 BS9365 BS9365 F014 F014 13 BAW63 BAW63 D1 BS9302 BS9302 F001 F001 * 15 BFS36A BFS36A L2 2N929 2N929 BS9365 BS9365 F013 F013 13 BAW63A BAW63A D2 BS9302 BS9302 F002 F002 * 15 BFS37 BFS37 L3 ..  Tags:   datasheet abstract..	120.26 Kb	3 Pages	OCR Scan
	First line: Silicon Epitaxial Planar Transistors Anwendungen: Rauscharme Applications: noise amplifiers Besondere Merkmale: Besonders rauscharm kleinen Very noise small collector current Abstract: .. hoi> 1,0 jS Open circuit output conductance 457 :2N929 2N929 �2N930 Silizium-NPN-Epitaxial-Planar-NIF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: Rauscharme NF ..  Tags:   datasheet abstract..	72.85 Kb	3 Pages	OCR Scan
	First line: MECHANICAL DATA Dimensions (inches) 2N930CSM Abstract: .. Hermetically sealed surface mount version of the popular 2N930 for high reliability applications requiring small size and low weight devices. VCBO Collector ‐ Base Voltage. VCEO Collector ..  Tags: npn general purpose medium speed   2N930CSM	19.66 Kb	2 Pages	Original
	First line: GENERAL PURPOSE Continued Type VCEO VcE(sat) fiat Ptot Tamb Packaga Complement N3053 1000 TO-39 2N4037 2N696 2N1131 2N697 TO-39 2N1132 BFY51 1000 0-35 TO-39 BC107 TO-18 BC177 BCY59 0-35 1000t TO-18 BCY79 Abstract: .. 10 0 -25 120 630 2 125 10 1000t 1000t TO-18 TO-18 BCY79 BCY79 2N929 2N929 45 45 30 1 10 0-5 40 120 0 01 — — 300 TO-18 TO-18 — 2N930 45 45 30 1 10 0 5 100 300 0 01 — — 300 TO-18 TO-18 — ZT81 ZT81 45 35 500 0 -2 10 2 38 162 10 200 10 300 TO-18 TO-18 ZT181 ZT181 ZT82 ZT82 ..  Tags:   datasheet abstract..	72.26 Kb	2 Pages	OCR Scan
	First line: transistor BC118 BC118 BFR37 SGS 2N706 Fairchild Silicon Small Signal Transistors General Purpose Amplifier Switching Transistors Plastic Package 105, 106) REFERENCE TABLE also level high voltage section. RATINGS CHARACTERISTICS VCEO VcE, tof, Stock Outline volts 25"C VoltS Drawing Abstract: .. 2N930 45 300 100 300 0.01 600 — 10 _ — 3.0 f't wideband 35287D 35287D 65 2N2484 2N2484 60 300 100 500 0.0! 250 — 1.0 2.0 10 3.0 <a wideband 35288B 35288B 65 PLEASE QUOTE STOCK NO. AND MANUFACTURER'S CODE WHEN ORDERING ..  Tags: 2N706 BFR37 SGS BC118 transistor BC118   datasheet abstract..	86.67 Kb	2 Pages	OCR Scan
	First line: BC237 NATIONAL SEMICONDUCTOR BC182 BC547 BC337/BC327* BC337/BC327 bflE bS0113D General Purpse Amplifiers Switches (cntinued) VcEO(sust) (Vlts) Devices (mA) hre@lc lT@lC (dB) Package (Amli) (mW) (Hz) 2N4032 1000 TO-39 2N6554 1500 T0-202(55) 1333 Abstract: .. 97 625 45 2N2270 2N2270 1000 50 200 150 100 50 TO-39 TO-39 1000 2N5962 2N5962 50 600 1400 10 100 10 3.0 TO-18 TO-18 400 2N930 200 100 300 0.01 150 5 TO-18 TO-18 300 BC237 BC237 BC307 BC307 100 120 460 2.0 150 10 10 T0-92 T0-92 97 625 BC337 BC337 BC327 BC327 1000 100 ..  Tags: BC337/BC327 BC337/BC327* BC182 BC547 BC237 NATIONAL SEMICONDUCTOR   datasheet abstract..	67.92 Kb	1 Pages	OCR Scan
	First line: GENERAL PURPOSE Continued Type VCEO VcE(sat) fiat Ptot Tamb Packaga Complement N3053 1000 TO-39 2N4037 2N696 2N1131 2N697 TO-39 2N1132 BFY51 1000 0-35 TO-39 BC107 TO-18 BC177 BCY59 0-35 1000t TO-18 BCY79 Abstract: .. 10 0 -25 120 630 2 125 10 1000t 1000t TO-18 TO-18 BCY79 BCY79 2N929 2N929 45 45 30 1 10 0-5 40 120 0 01 — — 300 TO-18 TO-18 — 2N930 45 45 30 1 10 0 5 100 300 0 01 — — 300 TO-18 TO-18 — ZT81 ZT81 45 35 500 0 -2 10 2 38 162 10 200 10 300 TO-18 TO-18 ZT181 ZT181 ZT82 ZT82 ..  Tags:   datasheet abstract..	45.79 Kb	1 Pages	OCR Scan
	First line: 2n2484 complementary BC109 MOTOROLA 2N2219 MOTOROLA 2N3019 motorola METAL SMALL-SIGNAL TRANSISTORS (continued) General-Purpose Amplifiers These transistors designed amplifier applications, general-purpose switching applications, complementary circuitry. Devices listed decreasing order V(br)CEO withi Abstract: .. 2N3700 2N3700 # 80 80 1.0 1000 50 500 2N2484 2N2484 # 60 15 0.05 50 100 500 0.01 Exists under CECC 2N930 45 30 0.5 30 100 300 0.01 BCY59 BCY59 45 125 10 200 120 630 2 Exists in VII, Vili, IX, X HFE groups BC107 BC107 45 150 10 100 110 800 ..  Tags: 2N3019 motorola 2N2219 MOTOROLA BC109 MOTOROLA 2n2484 complementary   datasheet abstract..	58.04 Kb	1 Pages	OCR Scan
	First line: 2N2475 Semiconductors Hybrid Micro-Electronics IFerranti have wide range silicon semiconductors, wholly U.K. made, available slice dice form, encapsulated microminiature packages multiple assemblies, with thick thin film circuits. Silicon Planar Devices Slice Dice Form Transistor diode slices suppli Abstract: .. mA Low Level Amplification STS930 STS930 n-p-n 45 30 6 75 0-5 2N930 /Useful current range \ 0 01mA 01mA to 20mA 20mA General Purpose Amplifiers and Switches STS80 STS80 STS180 STS180 n-p-n p-n-p 50 50 40 40 6 6 40 40 10 10 ZT80 ZT80 ZT180 ZT180 ..  Tags: 2N2475   datasheet abstract..	54.55 Kb	1 Pages	OCR Scan
	First line: LEVEL Type VceO VcE(sat) Pto, Tamb Package Complement 'C: Min. Max. 2N3053 1000 TO-39 2N4037 2N696 TO-39 2N1131 2N697 TO-39 2N1132 BFY51 1000 0.35 TO-39 BC107 TO-18 BC177 BCY59 0.35 0.25 1000* TO-18 BCY79 Abstract: .. .25 120 630 2 125 10 1000* TO-18 TO-18 BCY79 BCY79 2N929 2N929 45 45 30 1 10 0.5 40 120 0.01 - - 300 TO-18 TO-18 - 2N930 45 45 30 1 10 0.5 100 300 0.01 - - 300 TO-18 TO-18 - ZT81 ZT81 45 35 500 0.2 10 2 38 162 10 200 10 300 TO-18 TO-18 ZT181 ZT181 ZT82 ZT82 45 35 500 0.2 ..  Tags:   datasheet abstract..	48.77 Kb	1 Pages	OCR Scan
	First line: GENERAL PURPOSE Continued Type VCEO VcE(sat) fiat Ptot Tamb Packaga Complement N3053 1000 TO-39 2N4037 2N696 2N1131 2N697 TO-39 2N1132 BFY51 1000 0-35 TO-39 BC107 TO-18 BC177 BCY59 0-35 1000t TO-18 BCY79 Abstract: .. 0 -25 120 630 2 125 10 1000t 1000t TO-18 TO-18 BCY79 BCY79 2N929 2N929 45 45 30 1 10 0-5 40 120 0 01 — — 300 TO-18 TO-18 — 2N930 45 45 30 1 10 0 5 100 300 0 01 — — 300 TO-18 TO-18 — ZT81 ZT81 45 35 500 0 -2 10 2 38 162 10 200 10 300 TO-18 TO-18 ZT181 ZT181 ZT82 ZT82 ..  Tags:   datasheet abstract..	142.22 Kb	4 Pages	OCR Scan
	First line: BCY56 LEVEL Type Vceo VCE(sat, =T25*C Package Complement 2N3053 1000 TO-39 2N4037 2N696 TO-39 2N1131 2N697 TO-39 2N1132 BFY51 1000 0.35 TO-39 BSY51 100+ TO-39 BSY52 100+ TO-39 Abstract: .. 120 630 2 125 10 1000* TO-18 TO-18 BCY79 BCY79 BCY56 BCY56 45 45 100 0.2+ 100 10 100 450 2 250+ 10 300 TO-18 TO-18 - 2N930 45 45 30 1 10 0.5 100 300 0.01 - - 300 TO-18 TO-18 - ZT81 ZT81 45 35 500 0.2 10 2 38 162 10 200 10 300 TO-18 TO-18 ZT181 ZT181 ZT82 ZT82 45 35 500 ..  Tags: BCY56   datasheet abstract..	50.98 Kb	1 Pages	OCR Scan
	First line: zt87 equivalents MICRO-E MICRO-E PRODUCT LIST Where approval military been obtained appropriate British Standards number indicated under B.S. number. Transistors Diodes Nearest metal Device E-line Device Type marking equivalent B.S. number* Page Type marking BS/CECC number Page BFS36 2N930 BS9365 F0 Abstract: .. Type marking equivalent B.S. number* Page Type marking BS/CECC number Page BFS36 BFS36 L1 2N930 BS9365 BS9365 F014 F014 13 BAW63 BAW63 D1 BS9302 BS9302 F001 F001 * 15 BFS36A BFS36A L2 2N929 2N929 BS9365 BS9365 F013 F013 13 BAW63A BAW63A D2 BS9302 BS9302 F002 F002 * 15 BFS37 BFS37 L3 ..  Tags: zt87 equivalents   datasheet abstract..	166.85 Kb	4 Pages	OCR Scan
	First line: BC538 BC537 BC118 Fairchild Silicon Small Signal Transistors General Purpose Amplifier Switching Transistors Plastic Package 105, 106) REFERENCE TABLE also level high voltage section. RATINGS CHARACTERISTICS VCEO VcE, tof, Stock Outline volts 25"C VoltS Drawing Abstract: .. 2N930 45 300 100 300 0.01 600 — 10 _ — 3.0 f't wideband 35287D 35287D 65 2N2484 2N2484 60 300 100 500 0.0! 250 — 1.0 2.0 10 3.0 <a wideband 35288B 35288B 65 PLEASE QUOTE STOCK NO. AND MANUFACTURER'S CODE WHEN ORDERING ..  Tags: BC118 BC537 BC538   datasheet abstract..	51.68 Kb	1 Pages	OCR Scan
	First line: BFR37 transistor C740 BFR37 SGS SGS-ATES Transistors Small Signal REFERENCE TABLE Ptot Outline Tamb=25'C LVceo Range Stock Drawino Code (mA) (mA) (dB) (MHz) BFR37 0.25 0.5-50 80-250 Abstract: .. 65 2N914 2N914 0.36 15 0.01r500 01r500 30-120 10 — — 19142E 19142E 65 2N918 2N918 0.2 15 0.01-50 >20 3 6 600 19143C 19143C 70 2N930 0.3 45 — -60 0.5 3 30 19144A 19144A 65 2N2218 2N2218 0.8 30 0.1-500 40-120 150 — 250 19148D 19148D 67 2N2218A 2N2218A 0.8 40 0.1-500 40-120 ..  Tags: BFR37 SGS transistor C740 BFR37   datasheet abstract..	54.42 Kb	1 Pages	OCR Scan
	First line: transistor 2N2222 2n2222 ENGLAND SEMICONDUCTOR SMALL SIGNAL TRANSISTOR TO-18 PACKAGE DEVICE TYPE VcEO (sus) VOLTS (max) AMPS min/max mA/V VcE(iat) @IC/IB mA/mA (MHz) TO-18 T0206AA 2N706 0.05 20@10/1 0.6@10/1 2N708 30-120@10/l 0.4@10/1 2N718 40/120@150/10 1.5@150/15 2N718AA 40/120@150/10 1.5@150/15 2 Abstract: .. 2N718 2N718 2N718A 2N718A A 2N720A 2N720A 2N930 A 2N2221 2N2221 2N2221AA 2N2221AA 2N2222 2N2222 2N2222AA 2N2222AA 2N2368 2N2368 2N2369 2N2369 2N2369A 2N2369A 2N3227 2N3227 2N2432 2N2432 A 2N2432A 2N2432A A. l.S@ISO/IS I.S@lSO/IS S.0@lS0/S. 401120@IS0/W 401l20 401l20 @150/1O IS0@0.5/S 40/120 ..  Tags: 2n2222 transistor 2N2222   datasheet abstract..	46.64 Kb	1 Pages	OCR Scan
	First line: NOISE TABLE SILICON PLANAR NOISE TRANSISTORS transistors shown this table characterised noise, level amplification particularly suitable audio pre-amplifiers well universal applications. devices listed orderof decreasing Breakdown Voltage (Vceo). decreasing Collector Current (lc). Power Dissipation Abstract: .. 2 125 10 <6 200 1 K TO-18 TO-18 BCY79 BCY79 2N929 2N929 45 30 1 10 0 -5 40 120 0 01 — — <4 10 1K TO-18 TO-18 — 2N930 45 30 1 10 0 -5 100 300 0 01 — — <4 10 1 K TO-18 TO-18 — 2N2219A 2N2219A 40 800 0 -3 150 15 100 300 150 300 20 <4 100 1 K TO-39 TO-39 2N2905A 2N2905A ..  Tags:   datasheet abstract..	89.39 Kb	2 Pages	OCR Scan
	First line: BCY56 LEVEL Type Vceo VCE(sat, =T25*C Package Complement 2N3053 1000 TO-39 2N4037 2N696 TO-39 2N1131 2N697 TO-39 2N1132 BFY51 1000 0.35 TO-39 BSY51 100+ TO-39 BSY52 100+ TO-39 Abstract: .. 630 2 125 10 1000* TO-18 TO-18 BCY79 BCY79 BCY56 BCY56 45 45 100 0.2+ 100 10 100 450 2 250+ 10 300 TO-18 TO-18 - 2N930 45 45 30 1 10 0.5 100 300 0.01 - - 300 TO-18 TO-18 - ZT81 ZT81 45 35 500 0.2 10 2 38 162 10 200 10 300 TO-18 TO-18 ZT181 ZT181 ZT82 ZT82 45 35 500 0.2 ..  Tags: BCY56   datasheet abstract..	92.84 Kb	2 Pages	OCR Scan
	First line: 2N2210 transistor 2N2210 NATL SEMICOND (DISCRETE) bS01130 D037774 T-2~7~QI General Purpose Transistors Ascending Vceo (continued) Part Type Vceo(V) Vcbo Ic/Vce (MHz) Package (mA/V) PN5816 2/2.0 TO-92 TIS90 50/2.0 TO-92 TIS92 50/2.0 TO-92 TIS97 0.1/5.0 TO-92 TN2218A 150/10 TO-237 Abstract: .. 0 100 TO-92 TO-92 2N930 45 45 100 300 0.01.5.0 30 TO-18 TO-18 2N930A 45 60 100 300 0.01.5.0 45 TO-18 TO-18 BCF81 BCF81 45 50 420 800 2/5.0 TO-236 TO-236 BCW66F BCW66F 45 75 100 250 100/1.0 100 TO-236 TO-236 BCW72 BCW72 45 50 200 450 2/5.0 TO-236 TO-236 BCW81 BCW81 45 ..  Tags: transistor 2N2210 2N2210   datasheet abstract..	72.05 Kb	1 Pages	OCR Scan
	First line: f021* BSS56 ic marking z7 f007 AMPLIFIERS 2N2475 MICRO-E MICRO-E PRODUCT LIST Where approval military been obtained appropriate British Standards number indicated under B.S. number. Transistors Diodes Nearest metal Device E-line Device Type marking equivalent B.S. number* Page Type marking BS/CECC n Abstract: .. Type marking equivalent B.S. number* Page Type marking BS/CECC number Page BFS36 BFS36 L1 2N930 BS9365 BS9365 F014 F014 13 BAW63 BAW63 D1 BS9302 BS9302 F001 F001 * 15 BFS36A BFS36A L2 2N929 2N929 BS9365 BS9365 F013 F013 13 BAW63A BAW63A D2 BS9302 BS9302 F002 F002 * 15 BFS37 BFS37 L3 ..  Tags: 2N2475 f007 AMPLIFIERS ic marking z7 BSS56 f021*   datasheet abstract..	74.2 Kb	2 Pages	OCR Scan
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Specsheet Results
	2N930	N/A	Silicon NPN	Specification
	2N930	N/A	Low Power, Low Noise, General Purpose	Specification
	2N930-46	N/A	Low Power, Low Noise, General Purpose	Specification
	2N930/51	N/A	Si NPN Lo-Pwr BJT	Specification
	2N930-51	N/A	Low Power, Low Noise, General Purpose	Specification
	2N930A	N/A	Low Power, Low Noise, General Purpose	Specification
	2N930A-46	N/A	Low Power, Low Noise, General Purpose	Specification
	2N930A/51	Transitron Electronic Corp.	Si NPN Lo-Pwr BJT	Specification
	2N930A-51	N/A	Low Power, Low Noise, General Purpose	Specification
	2N930(A,B)	N/A	Silicon NPN	Specification
	2N930B	N/A	Low Power, Low Noise, General Purpose	Specification
	2N930CHIP	Dionics, Inc.	Si NPN Lo-Pwr BJT	Specification
	2N930CSM	N/A	Low Power, Low Noise, General Purpose	Specification
	2N930D	N/A	Si NPN Lo-Pwr BJT	Specification
	2N930DA(CHIP)	Zetex Semiconductors	Si NPN Lo-Pwr BJT	Specification
	2N930DB(CHIP)	Zetex Semiconductors	Si NPN Lo-Pwr BJT	Specification
	2N930DC(CHIP)	Zetex Semiconductors	Si NPN Lo-Pwr BJT	Specification
	2N930+JAN	Defense Supply Center Columbus	Si NPN Lo-Pwr BJT	Specification
	2N930+JANTX	Defense Supply Center Columbus	Si NPN Lo-Pwr BJT	Specification
	2N930/TNT	Transitron Electronic Corp.	Si NPN Lo-Pwr BJT	Specification

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