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Part Manufacturer Description Datasheet BUY
JANTX2N718A Microsemi Corporation Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN visit Digikey Buy
JAN2N718A Microsemi Corporation Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN visit Digikey Buy

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Part : 2N718A Supplier : Central Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.6979 Price Each : $0.7629
Part : 2N718A Supplier : Fairchild Semiconductor Manufacturer : Bristol Electronics Stock : 2 Best Price : - Price Each : -
Part : 2N718A Supplier : Microsemi Manufacturer : basicEparts Stock : 21 Best Price : - Price Each : -
Part : JANTX2N718AMSC Supplier : Microsemi Manufacturer : NexGen Digital Stock : 468 Best Price : - Price Each : -
Part : 2N718A Supplier : Texas Instruments Manufacturer : Chip1Stop Stock : 230 Best Price : $29.2200 Price Each : $33.98
Part : 2N718A Supplier : Microsemi Manufacturer : Chip1Stop Stock : 54 Best Price : $38.59 Price Each : $44.3500
Part : 2N718AJANTX Supplier : Microsemi Manufacturer : Chip1Stop Stock : 386 Best Price : $57.23 Price Each : $68.0100
Part : JAN2N718A Supplier : Microsemi Manufacturer : Chip1Stop Stock : 360 Best Price : $124.1000 Price Each : $124.1000
Part : JANTX2N718A Supplier : Microsemi Manufacturer : Chip1Stop Stock : 394 Best Price : $60.9900 Price Each : $70.1500
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2N718A Datasheet

Part Manufacturer Description PDF Type
2N718A Central Semiconductor Leaded Small Signal Transistor General Purpose Original
2N718A Microsemi NPN Low Power Silicon Transistor Original
2N718A Semelab Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package Original
2N718A Boca Semiconductor GENERAL PURPOSE TRANSISTOR (NPN SILICON) Scan
2N718A Central Semiconductor Various Transistors Scan
2N718A Central Semiconductor Transistor Selection Guide Scan
2N718A Continental Device India Semiconductor Device Data Book 1996 Scan
2N718A Diode Transistor SMALL SIGNAL TRANSISTORS Scan
2N718A Fairchild Semiconductor NPN Small Signal General Purpose Amplifiers Scan
2N718A Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N718A General Diode Transistor Selection Guide Scan
2N718A General Transistor Small Signal Transistor Selection Guide Scan
2N718A Micro Electronics Medium Power Amplifiers and Switches Scan
2N718A Micro Electronics Semiconductor Device Data Book Scan
2N718A Motorola Motorola Semiconductor Datasheet Library Scan
2N718A Motorola The European Selection Data Book 1976 Scan
2N718A Motorola Power Transistor Selection Guide Scan
2N718A N/A Transistor Shortform Datasheet & Cross References Scan
2N718A N/A Basic Transistor and Cross Reference Specification Scan
2N718A N/A GE Transistor Specifications Scan
Showing first 20 results.

2N718A

Catalog Datasheet MFG & Type PDF Document Tags

2N1711

Abstract: 2N956 MAXIMUM RATINGS Rating Symbol 2N718A 2N956 2N1711 Unit Collector-Emitter Voltage VCER 50 Vdc , +200 THERMAL CHARACTERISTICS Characteristic Symbol 2N718A 2N956 2N1711 Unit Thermal Resistance, Junction to Ambient R0JA 350 58 °C/W Thermal Resistance, Junction to Case R0JC 97 219 x/w 2N718A 2N956 , = 0, TA = 150°C) 'CBO - 0.001 0.01 10 iiAdc Emitter Cutoff Current (Veb = 5.0 Vdc, lc = 0) 2N718A , 10 Vdc) 2N956, 2N1711 hFE 20 _ _ - (lc = 0.1 mAdc, Vce = 10 Vdc) 2N718A, 2N956, 2N1711 20 35 - -
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X10-4 2N1711N 2IM3019

2N1711 MOTOROLA

Abstract: 2n1711 °C (d 2N718A 2N956 Symbol VCER VCBO v EBO PD 2N718A 2N956 2N1711 50 75 Unit Vdc CASE , TRANSISTORS NPN SIUCON Refer to 2N3019 fo r graphs. Symbol r 0JA 2N718A 2N956 350 97 2N1711 58 219 , , Vce = 10 Vdc} hFE 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 v CE(sat) v BE(satl 2.0%. 20 20 35 35 75 20 35 40 100 20 40 , (BR)E80 fCBO 50 75 7.0 - - - - - - Vdc Vdc Vdc /¿Ade 'EBO 2N718A, 2N956, 2N1711 -
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2N1711 MOTOROLA 2N956 MOTOROLA T0-205AD

2N1711

Abstract: 2N1711 MOTOROLA '" 0c = 10 mAdc, Vce = 1° Vdc. Ta = -55»C) 2N718Ã', 2N956, 2N1711 20 35 â'" _ (iC = 150 mAdc, Vqe = 10 Vdc)(1) 2N718A, 2N956, 2N1711 40 100 _ 120 300 dC = 500 mAdc, Vce = 10 Vdc)(1) 2N718Ã', 2N956 , MAXIMUM RATINGS Rating Symbol 2N718A 2N956 2N1711 Unit Collector-Emitter Voltage VCER 50 Vdc , -65 to +200 °C THERMAL CHARACTERISTICS Characteristic Symbol 2N718A 2N956 2N1711 Unit , 219 "C/W 2N718A 2N956 CASE 22-03, STYLE 1 TO-18 (TO-206AA) 3 Collector 1 Emitter 2N1711 CASE 79-04
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2N1711

Abstract: 2N1711 M - Tstg 500 2.86 1.8 10.3 2N718A 2N956 50 75 7.0 800 4.57 3.0 17.15 1 ; I 2N1711 Unit Vdc Vdc Vdc mW m W :C W atts m W :C C 2N718A 2N956 CASE 22-03, STYLE 1 TO-18 (TO-206AA) - 6 5 to +200 2N1711 , bient Therm al Resistance, Junctio n to Case Symbol R«j a R0JC 2N718A 2N956 350 97 2N1711 58 219 Unit , 0.01 m Adc, V c e = 10 Vdc) (lc = 0.1 m Adc, V c e = 10 Vdc) h FE 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 2N718A, 2N956, 2N1711 VcE lsatl v BE
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2N1711 M

2N1613

Abstract: 2N718A TECHNICAL DATA 2N718A JAN, JTX, JTXV 2N1613 JAN, JTX, JTXV 2N1613L JAN, JTX, JTXV MIL-PRF , Power Dissipation @ TA = +250C (1) 2N718A 2N1613, L @ TC = +250C(2) 2N718A 2N1613, L Operating & , 500 Vdc Vdc Vdc mAdc TJ, Tstg 0.5 0.8 1.8 3.0 -55 to +175 2N718A TO- 18 (TO206AA , . Unit Thermal Resistance, Junction-to-Case RJC 0 2N718A 97 C/W 2N1613, L 58 1) Derate linearly 4.57 mW/0C for 2N1613, L and 2.85 mW/0C for 2N718A for TA > +250C 2) Derate linearly 17.2 mW/0C for
New England Semiconductor
Original
MIL-PRF-19500/181

2n1613

Abstract: MIL-PRF-19500/181 DEVICES LEVELS 2N718A 2N1613 2N1613L JAN JANTX JANTXV ABSOLUTE , @ TA = +25°C 2N718A 2N1613, L PT 0.5 0.8 W Total Power Dissipation @ TC = +25°C 2N718A 2N1613, L PT 1.8 3.0 W TJ, Tstg -65 to +200 °C RθJC 97 58 TO-18 (TO-206AA) 2N718A °C/W Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to-Case 2N718A 2N1613, L (1) Derate linearly at 4.57 mW/°C for 2N1613, L and 2.85mW/°C for 2N718A
Microsemi
Original
T4-LDS-0200

2n1613

Abstract: 2N718A Qualified Level JAN JANTX JANTXV 2N1613 2N1613L 2N718A MAXIMUM RATINGS Ratings Symbol , +250C (1) 2N718A 2N1613, L @ TC = +250C (2) 2N718A 2N1613, L Operating & Storage Junction , TO-18 (TO-206AA)* 2N718A Unit 0 2N718A 97 C/W RJC 2N1613, L 58 1) Derate linearly 4.57 mW/0C for 2N1613, L and 2.85 mW/0C for 2N718A for TA > +250C 2) Derate linearly 17.2 mW/0C for 2N1613, L and 10.3 mW/0C for 2N718A for TC > +250C TO-5* 2N1613L *See appendix A for package
Microsemi
Original
2N1613 JANTX

2N956

Abstract: 2N718A 2N718A 2N 956 SILICON PLANAR NPN AMPLIFIERS AND SWITCHES The 2N718A and 2N 956 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case, intended for high-speed switching and , /76 200 2N718A 2N956 THERMAL DATA Mh j-amb Thermal resistance junction-case Thermal resistance , lc = 150 mA lB = 15 mA 1 1.3 V hFE DC current gain * # for 2N718A lc= 0.1mA VCE=10V lc= 10 mA VCE , =10V lc= 0.1mA VCE=10V 20 35 40 120 20 20 20 35 - 201 2N718A 2N956 ELECTRICAL CHARACTERISTICS
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2n1613 equivalent

Abstract: 2n1613 -19500/181 DEVICES LEVELS 2N718A 2N1613 2N1613L JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS , Dissipation @ TC = +25°C 2N718A 2N1613, L 2N718A 2N1613, L Symbol VCEO VCBO VEBO IC PT PT TJ, Tstg RJC Min. 30 , -206AA) 2N718A Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to-Case 2N718A 2N1613, L (1) Derate linearly at 4.57 mW/°C for 2N1613, L and 2.85mW/°C for 2N718A for TA > +25°C (2) Derate linearly at 17.2 mW/°C for 2N1613, L and 10.3mW/°C for 2N718A for TC > +25°C ELECTRICAL
Microsemi
Original
2n1613 equivalent 2N718A equivalent

2N1613

Abstract: 2N718A Qualified Level JAN JANTX JANTXV 2N1613 2N1613L 2N718A MAXIMUM RATINGS Ratings Symbol 2N718A 2N1613, L 2N718A 2N1613, L @ T C = +250C (2) Operating & Storage Junction Temperature , , Junction-to-Case 2N718A 97 RJC 2N1613, L 58 0 0 1) Derate linearly 4.57 mW/ C for 2N1613, L and 2.85 mW/ C for 2N718A for T A > +250C 2) Derate linearly 17.2 mW/0C for 2N1613, L and 10.3 mW/0C for 2N718A for T C > +250C TO-18 (TO-206AA)* 2N718A Unit 0 C/W TO-5* 2N1613L *See appendix A for
Microsemi
Original
transistor 2N1613 2N1613 Data Sheet
Abstract: ,6#18;,62 #28;#19;#19;#21; /LF 46/#16; #19;#19;#19;#19;#20;#28;#17;#21; Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N718A TO-18 Metal Can Package General , < 2% Continental Device India Limited Data Sheet Page 1 of 3 2N718A TO-18 Metal Can , " x 13.5" 80K Page 2 of 3 Notes 2N718A TO-18 Metal Can Package Disclaimer The product , www.cdil.com 2N718ARev200701 Continental Device India Limited Data Sheet Page 3 of 3 Continental Continental Device India
Original
C-120 2N718AR

2N956

Abstract: 718a 2N718A 2N956 SILICON PLANAR NPN AMPLIFIERS AND SWITCHES The 2N 718A and 2N 956 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case, intended for high-speed switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS VcBO Collector-base voltage (lE = 0) 75 V VcER , /76 228 2N718A 2N956 THERMAL DATA max 97 °C/W max 350 °C/W Rth j-case Thermal resistance , =10V Tamb=-55°C for 2N 956 lc= 0.01mA VCE=10V lc= 0.1mA VCE=10V 20 35 40 120 20 20 20 35 - 229 2N718A
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718a
Abstract: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N718A TO-18 Metal Can Package General Purpose Transistor. ABSOLUTE , India Limited Data Sheet Page 1 of 3 2N718A TO-18 Metal Can Package TO-18 Metal Can Package , Page 2 of 3 Notes 2N718A TO-18 Metal Can Package Disclaimer The product information and the , 2N718ARev200701 Continental Device India Limited Data Sheet Page 3 of 3 Continental Device India Continental Device India
Original

2N718A

Abstract: TRANSISTOR 2n718a Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N718A TO-18 Metal Can Package General Purpose Transistor. ABSOLUTE MAXIMUM , of 3 2N718A TO-18 Metal Can Package TO-18 Metal Can Package A E G K 2 F 1 3 , CARTON BOX Size Qty Gr Wt 34 kgs 17" x 15" x 13.5" 80K Page 2 of 3 Notes 2N718A TO , 2N718ARev200701 Continental Device India Limited Data Sheet Page 3 of 3 Continental Device India
Continental Device India
Original
TRANSISTOR 2n718a

2N718A

Abstract: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N718A TO-18 Metal Can Package General Purpose Transistor. ABSOLUTE , Data Sheet Page 1 of 3 2N718A TO-18 Metal Can Package TO-18 Metal Can Package A E G , 2N718A TO-18 Metal Can Package Disclaimer The product information and the selection guides , 2N718ARev200701 Continental Device India Limited Data Sheet Page 3 of 3 Continental Device India
Continental Device India
Original

2N718

Abstract: SA37T 2 2 2 TYPES 2N717, 2N718, 2N718A. "Î : N-P-N SILICON TRANSISTORS 'electrical , TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N , Range * mechanical data Device types 2N717, 2N718, 2N718A, 2N730, 2N731, and 2N956 are in JEDEC TO , O X 5012 · D A L L A S . T E X A S 75 2 2 2 4-27 TYPES fri 2N717. 2N718, 2N718A , 5 0 1 2 ents 4-29 DALLAS. TEXAS 7 5 2 2 2 TYPES 2N717. 2N718, 2N718A, 20& Ni N-P-N
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2NI613 SA37T 2n1711 Texas 2N1420 2N1507

2K1420

Abstract: 2n1420 data Device types 2N717, 2N718, 2N718A, 2N730, 2N731, and 2N956 are in JEDEC TO-18 packages. Device , baso-em itter resistance (R |g ) is equal to or less than 2N717 2N718 60 40 5 0.4 2N718A 75 50 32 7 , s IN CORPORATED TYPES 2N718A, 2N956. 2 N1420, 2N1507, 2N1613. 2N1711 N-P-N SILICON TRANSISTORS , pi See switching characteristics for typos 2N718A and2N 1613 on pages 4-30 or 4-72. * operating
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OCR Scan
2K1420

2n1613 equivalent

Abstract: 2N1613 , NPN, SILICON, LOW-POWER, TYPES 2N718A, 2N1613, AND 2N1613L, JAN, JANTX, AND JANTXV This , -39 and TO-5). * 1.3. Maximum ratings. Unless otherwise specified, TC = +25°C. 2N718A 2N1613 , 2N1613 and 2N1613L and at 10.3 mW/°C for type 2N718A for TC > +25°C. (2) See figures 3 and 4 , . 12 MIL-PRF-19500/181H Temperature-Power Derating Curve 2N718A DC Operation Maximum Rating , to limit TJ in their application. * FIGURE 3. Temperature-power derating for 2N718A (TO-18 package
DEPARTMENT OF DEFENSE
Original
MIL-PRF-19500/181G MIL-PRF-19500

N1711

Abstract: 2n1420 type* 2N717, 2N718, 2N718A, 2N730, 2N731, and 2N956 are in JEDEC TO-18 packages. Device types 2N696 , rate of 10.0 temperature at the rate of 10.3 B UNIT V V V V 2N717 2N718A 2N730 2N 7 3 I 2N718
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OCR Scan
N1711 N1613 2N17TI

2n731

Abstract: 2N718 Useful hFE Over Wide Current Range * mechanical data Device types 2N717, 2N718, 2N718A, 2N730, 2N731 , Ttmperature Operating Coiltctor Junction Temperature Storage Temperature Rang* 2N717 2N718A 2N730 2N718
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2n1413 2NT711 3N696

2N1420

Abstract: 2N731 types 2N717, 2N718, 2N718A, 2N730, 2N731, and 2N956 are in JEDEC TO-18 packages. Device types 2N696 , temperature (unless otherwise noted) 2N 696 2N 697 60 40 5 0.4 2N 717 2N 7 1 8 60 40 5 0.4 2N718A 75 50 32 7
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2n161 2N956 TEXAS INSTRUMENTS 2N1S07 100CC

2N73A

Abstract: 2N696 TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 7MI 31. ?tW58. 2N1420. 2N1507, 2W1613, 2NI71I N-P-N SILICON TRANSISTORS B U L L E T I N N O. D L - S 6 9 3 4 7 1 , M A Y 1 9 6 3 - B E V I S 6 D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications from 150 ma, dc to 30 me · High Voltage · Low Leakage · Useful hFE Over Wide Current Range * mechanical data Device types 2N717, 2N718, 2N718A, 2N730, 2N731, and 2N956 are in
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OCR Scan
2N73A TW58 2W17 ml907
Showing first 20 results.