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2N7000BU Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN visit Digikey Buy
2N7000-G Microchip Technology Inc 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 visit Digikey Buy
2N7000TA Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN visit Digikey Buy

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2N7000 Datasheet

Part Manufacturer Description PDF Type
2N7000 Calogic N-Channel Enhancement-Mode MOS Transistor Original
2N7000 Diodes TRANS MOSFET N-CH 60V 0.115A 3TO-92 Original
2N7000 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original
2N7000 Fairchild Semiconductor TRANS MOSFET N-CH 60V 0.2A 3TO-92 BULK Original
2N7000 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original
2N7000 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original
2N7000 General Semiconductor DMOS Transistors (N-Channel) Original
2N7000 Kexin N-Channel Enhancement Mode MOSFET Original
2N7000 Micro Commercial Components TRANS MOSFET N-CH 60V 0.3A 3TO-92 Original
2N7000 Motorola TMOS FET Transistor Original
2N7000 Motorola FET Transistor, Small Signal Field Effect Transistor, N Channel Enhancement Mode Silicon Gate TMOS, TO-226AA Original
2N7000 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original
2N7000 On Semiconductor Small Signal MOSFET 200 mAmps, 60 Volts Original
2N7000 Philips Semiconductors N-channel enhancement mode field-effect transistor Original
2N7000 Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor Original
2N7000 Philips Semiconductors NPN general purpose transistor Original
2N7000 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original
2N7000 Semelab FET, Enhancement, N Channel, 0.8 VThreshold, ID 0.2 A Original
2N7000 SemiWell Semiconductor Logic N-Channel MOSFET Original
2N7000 Siliconix N-Channel Enhancement-Mode MOSFET Transistors Original
Showing first 20 results.

2N7000

Catalog Datasheet MFG & Type PDF Document Tags

2N7000

Abstract: 2N7002 November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor , . D G S Absolute Maximum Ratings T A = 25°C unless otherwise noted 2N7000 2N7002 , Semiconductor Corporation 312.5 625 417 °C/W 2N7000 Rev. C1 / 2N7002 Rev. C2 / 2N7002A Rev. F2 , Min VGS = 0 V, ID = 10 µA All 60 VDS = 48 V, VGS = 0 V Typ 2N7000 Max Units , 0.5 mA Gate - Body Leakage, Reverse 2N7000 10 nA 2N7002 NDS7002 100 nA VGS
Fairchild Semiconductor
Original
nds7000 2N700 fairchild 2n7000 2n7000 equivalent FAIRCHILD 2N7002 Fairchild SOT-23 2N7002 NDS7000A

2N7002

Abstract: 2N7000 417 °C/W 2N7000.SAM Rev. A1 Electrical Characteristics T Symbol A = 25°C unless , TJ =125°C VDS(ON) 7.5 2.4 TJ =100C â"¦ 1.5 0.6 1 0.09 0.15 2N7000.SAM , 1.2 Note: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. 2N7000.SAM Rev. A1 Typical , 150 Figure 6. Gate Threshold Variation with Temperature 2N7000.SAM Rev. A1 Typical , Waveforms 2N7000.SAM Rev. A1 Typical Electrical Characteristics (continued) 3 2 1 1 I D
Fairchild Semiconductor
Original
2N7002/NDS7002A

2N7000

Abstract: fairchild 2n7000 2N7000.SAM Rev. A1 Electrical Characteristics T Symbol A = 25°C unless otherwise noted , =100C 1.5 0.6 1 0.09 0.15 2N7000.SAM Rev. A1 Electrical Characteristics T , < 2.0%. 2N7000.SAM Rev. A1 Typical Electrical Characteristics 2N7000 / 2N7002 / NDS7002A 2 3 , Temperature 2N7000.SAM Rev. A1 Typical Electrical Characteristics (continued) 2N7000 / 2N7002 , % 10% Pulse Width Figure 12. Switching Waveforms 2N7000.SAM Rev. A1 Typical Electrical
Fairchild Semiconductor
Original
100C 2N7000/BS170L 2N700 mosfet

2n7000+complement

Abstract: 2N7000 DMOS Transistors (N-Channel) _ FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ , °C Vf 850 mV 4/98 G eneral \ ) S e m ic o n ] 2N7000 _ , from case. G eneral \ ) SEMICON] RATINGS AND CHARACTERISTIC CURVES 2N7000 Output , 0.6 2N7000 1 N \ f 17V 5 = 25 C 0.8 O) < ^tot A 0) II 0.8 2N7000 D(ON) \ 0.6 \ V \ 5V 0.4 0.4 \ 0.2 N \ 0.2 \ r 4V
-
OCR Scan
2n7000+complement

2n7000+complement

Abstract: 2N7000 Vo ltale Type Min. T yp . 2N7000 60 Max. 80 Unita V Tee* Conditions VG g - 0 I0 - 1 0 * j A as m A V QS(th) Gate-Threshofd Voltage 2N7000 1.8 3 V IQ S S F Gate-Body leakage Forward 2N7000 1 10 nA V Q S -+ 1 5 V ^GSSR Gate*8ody Leakage R a w s « 2N7000 -1 -1 0 nA V G S â'" 16V 2N7000 0.1 1 MA V D S -4 8 V .V q s - 0 2N7000 ai 1 mA V d s â' 48V T q - 125"C *V q s â' 0
-
OCR Scan
GG0321 00QD322 N7000

2N7000

Abstract: 2N7000/2N7000 v G en era l S e m ic o n d u c t o r * 2N7000 DMOS Transistor (N-Channel) DMOS Transistors , a l v7 S e m ic o n i _ 2N7000 DMOS Transistors (N-Channel) Electrical , characteristics Piiae teat wMth 80 ms; pulae duty factor 1 %. W 2N7000 2N7000 1 /7 V ., 5 , voltage mA 2N7000 mA 2N7000 rasao) 159 DMOS Transistors - O s G en eral v S e m i c o n d u c t o r * _ 2N7000 DMOS Transistors
-
OCR Scan
2N7000/2N7000

2n7000

Abstract: 2N7002 , Junction-to-Ambient 312.5 625 417 °C/W © 1997 Fairchild Semiconductor Corporation 2N7000.SAM Rev. A1 Electrical , nds7002a 0.6 1 VGS = 5.0 V, lD = 50 mA 0.09 0.15 2N7000.SAM Rev. A1 Electrical , %. 2N7000.SAM Rev. A1 Typical Electrical Characteristics 2N7000 / 2N7002 / NDS7002A VDS , DRAIN-SOURCE , Temperature 25 50 75 100 , JUNCTION TEM PERATURE (°C) 2N7000.SAM Rev. A1 Typical Electrical , Waveforms 2N7000.SAM Rev. A1 Typical Electrical Characteristics (continued) VDS , DRAIN-SOURCE VOLTAGE
-
OCR Scan
2N7000 MOSFET 2n7002 12 2N7002 60V SOT-23 1075Q

2N7000

Abstract: 2N700 PAIRCHII-D M ICDNDUCTQ R ! November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement , ^DSS ^DGR ^GSS Parameter Drain-Source Voltage = 2 5 °C unless otherw ise noted 2N7000 2N7002 , Corporation < 2N7000 Rev. C1 / 2N7002 Rev. C2 / 2N7002A Rev. F2 Electrical Characteristics t a = , VQ S = 0 V, lD= 10 |iA VD s = 48 V, VGS= 0 V Tj=125°C V ds = 6 0 V , Vgs= 0 V Tj=125°C All 2N7000 60 1 1 V HA mA HA mA nA nA nA nA 2N7002 NDS7002 2N7000 2N7002 NDS7002 2N7000 2N7002 NDS7002
-
OCR Scan
7002A FE -2N7002

2N7000

Abstract: 2N7000TA C£ L ) G e n e r a l v S e m ic o n d u c t o r _ 2N7000 DMOS Transistor (N-Channel , ] 2N7000 DMOS Transistors (N-Channel) Electrical Characteristics (Tj = 25°C unless otherwise noted , t o r * Ratings and Characteristic Curves (T _ 2N7000 DMOS Transistors (N-Channel) a , ; puéee duty factor 1 % . 2N7000 2N7000 1 7V 0.8 5 = 25*C =\ 0.8 '¡V»9 0.6 K 5 S , gate threshold voltage mA 2N7000 mA 103 2N7000 *i>s- Kss T a =25-C 10 ' 10 / / f
-
OCR Scan
lfe10 2N7000T

2n7002

Abstract: 2N7000 PACKAGE PACKAGING 2N7000 2N7000G TO-92 BULK 2N7002 ST2N SOT23-3L TAPE & REEL Rev. 3 April 2005 1/11 2N7000 - 2N7002 Table 3: Absolute Maximum ratings Symbol Parameter , 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFETâ"¢II MOSFET Table 1: General Features TYPE Figure 1: Package RDS(on) Id 60 V 60 V 2N7000 2N7002 VDSS < 5 , 5.3 Ω Ω 2N7000 - 2N7002 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic Symbol
STMicroelectronics
Original
mosfet 2N7000 7110469/A

2N7002

Abstract: 2N7000 FAIRCHILD MICDNDUCTOR November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode , otherwise noted Symbol Parameter 2N7000 2N7002 NDS7002A Units ^dss Drain-Source Voltage 60 V ^dgr , Resistance, Junction-to-Ambient 312.5 625 417 °C/W ©1 997 Fairchild Semiconductor Corporation 2N7000 Rev , All 60 V 'dss Zero Gate Voltage Drain Current Vds = 48 V, VGS = 0 V 2n7000 1 HA Tj , Leakage, Forward VGS=15V, Vds = 0 V 2n7000 10 nA VGS = 20 V, VDS = 0 V 2n7002 nds7002 100 nA
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OCR Scan
2N7002 FAIRCHILD

2N7000 021

Abstract: 2N7000 MOSFET 2N7000.SAM Rev. A1 Electrical Characteristics T Symbol A = 25°C unless otherwise noted , =100C 1.5 0.6 1 0.09 0.15 2N7000.SAM Rev. A1 Electrical Characteristics T , < 2.0%. 2N7000.SAM Rev. A1 Typical Electrical Characteristics 2N7000 / 2N7002 / NDS7002A 2 3 , Temperature 2N7000.SAM Rev. A1 Typical Electrical Characteristics (continued) 2N7000 / 2N7002 , % 10% Pulse Width Figure 12. Switching Waveforms 2N7000.SAM Rev. A1 Typical Electrical
Fairchild Semiconductor
Original
2N7000 021 D3000 2n7000 data sheet CBVK741B019 PN2222N low vgs mosfet to-92

VQ1000J

Abstract: VQ1000P 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 , View Top View 2N7000 2N7002 (72)* *Marking Code for TO-236 Dual-In-Line D1 D4 S1 2 , request FaxBack document #70226. Siliconix S-52429-Rev. E, 28-Apr-97 1 2N7000/7002, VQ1000J/P , Symbol 2N7000 2N7002 VQ1000J VQ1000P VDS 60 60 60 60 VGSM "40 "40
Temic Semiconductors
Original
S-52429 TO-92-18R 2N7000/7002 S-52429--R

2N700

Abstract: 100C , Junction-to-Ambient © 1997 Fairchild Semiconductor Corporation 312.5 625 417 °C/W 2N7000.SAM Rev. A1 , 0.09 0.15 2N7000.SAM Rev. A1 Electrical Characteristics T Symbol A = 25oC unless , %. 2N7000.SAM Rev. A1 Typical Electrical Characteristics 2N7000 / 2N7002 / NDS7002A 3 9.0 8.0 , TEM PERATURE (°C) 125 150 Figure 6. Gate Threshold Variation with Temperature 2N7000.SAM , % 50% 10% Pulse Width Figure 12. Switching Waveforms 2N7000.SAM Rev. A1 Typical
Fairchild Semiconductor
Original

2N7002

Abstract: 2N7002 MARKING PACKAGING 2N7000 2N7000G TO-92 BULK 2N7002 ST2N SOT23-3L TAPE & REEL Rev. 3 April 2005 1/11 2N7000 - 2N7002 Table 3: Absolute Maximum ratings Symbol Parameter Value , 2N7000 2N7002 N-CHANNEL 60V - 1.8 - 0.35A SOT23-3L - TO-92 STripFETTMII MOSFET Table 1: General Features TYPE Figure 1: Package RDS(on) Id 60 V 60 V 2N7000 2N7002 VDSS < 5 (@ 10V , , TC = 125°C µA 10 1 µA ±100 nA 2.1 3 V 1.8 2 5 5.3 2N7000
STMicroelectronics
Original
2N7002 MARKING ST2N 2N7002 SOT23 codes marking st2n ST2N transistor 2n7000 equivalents

BS170

Abstract: VQ1000J 2N7000/7002, VQ1000J/P, BS170 Siliconix NChannel EnhancementMode MOS Transistors Product Summary Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N7000 5 @ VGS , D 3 Top View Top View 2N7002 (72)* 2N7000 *Marking Code for TO236 DualInLine D1 D4 , Top View BS170 1 2N7000/7002, VQ1000J/P, BS170 Siliconix Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Single Parameter Symbol 2N7000 2N7002 VQ1000J Total
Temic Semiconductors
Original
2N7000 7002 BS170 siliconix 7002 2n7002 P-37993--R

2N7000

Abstract: 2N700 2N7000.SAM Rev. A1 Electrical Characteristics T Symbol A = 25°C unless otherwise noted , =100C 1.5 0.6 1 0.09 0.15 2N7000.SAM Rev. A1 Electrical Characteristics T , < 2.0%. 2N7000.SAM Rev. A1 Typical Electrical Characteristics 2N7000 / 2N7002 / NDS7002A 2 3 , Temperature 2N7000.SAM Rev. A1 Typical Electrical Characteristics (continued) 2N7000 / 2N7002 , % 10% Pulse Width Figure 12. Switching Waveforms 2N7000.SAM Rev. A1 Typical Electrical
Fairchild Semiconductor
Original
17VGS

MOSFET S170

Abstract: s170 mosfet 2N7000/7002, VQIOOOJ/P, BS170 S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number 2N7000 2N7002 VQIOOOJ VQIOOOP BS170 60 V(BR)DSS M i n (V ) *t>S(on , TO -226A A (TO-92) Top View Top View 2N7000 2N7002 (72)* *M arking Code for TO -236 Di N < Si G , Siliconix S-52429- Rev. E, 28-Apr-97 2N7000/7002, VQIOOOJ/P, BS170 Absolute Maximum Ratings (Ta = 25 , Symbol V ds V g sm V GS 2N7000 60 ±40 ±20 0.2 0.13 0.5 0.4 0.16 312.5 2N7002 60 ±40 ±20 0.115
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OCR Scan
MOSFET S170 s170 mosfet s170 s170 to92 1000J S-52429--

2n7000 equivalent

Abstract: VQ1000J 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 , View Top View 2N7002 (72)* 2N7000 *Marking Code for TO-236 Dual-In-Line D1 D4 S1 2 , request FaxBack document #70226. Siliconix S-52429-Rev. E, 28-Apr-97 1 2N7000/7002, VQ1000J/P , Symbol 2N7000 2N7002 VQ1000J VQ1000P VDS 60 60 60 60 VGSM "40 "40
Siliconix
Original
2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 mosfet bs170 marking v80 S-52429-Rev

100C

Abstract: 2N700 2N7000.SAM Rev. A1 Electrical Characteristics T Symbol A = 25°C unless otherwise noted , =100C 1.5 0.6 1 0.09 0.15 2N7000.SAM Rev. A1 Electrical Characteristics T , < 2.0%. 2N7000.SAM Rev. A1 Typical Electrical Characteristics 2N7000 / 2N7002 / NDS7002A 2 3 , Temperature 2N7000.SAM Rev. A1 Typical Electrical Characteristics (continued) 2N7000 / 2N7002 , % 10% Pulse Width Figure 12. Switching Waveforms 2N7000.SAM Rev. A1 Typical Electrical
Fairchild Semiconductor
Original

2n7000

Abstract: 2N700 November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor , 2N7000 2N7002 NDS7002A Symbol Parameter VDSS Drain-Source Voltage 60 V VDGR , , Junction-to-Ambient © 1997 Fairchild Semiconductor Corporation 312.5 625 417 °C/W 2N7000.SAM Rev. A1 , 2N7000 V 1 VDS = 60 V, VGS = 0 V TJ=125°C 2N7002 NDS7002A µA 1 TJ=125°C mA 1 µA 0.5 mA Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V 2N7000 10 nA VGS
Fairchild Semiconductor
Original

07153

Abstract: 03aa02 2N7000 N-channel enhancement mode field-effect transistor Rev. 03 - 19 May 2000 Product , TrenchMOSTM1 technology. Product availability: 2N7000 in SOT54 (TO-92 variant). 2. Features s TrenchMOSTM , . TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors 2N7000 N-channel , 2 of 13 Philips Semiconductors 2N7000 N-channel enhancement mode field-effect transistor , 3 of 13 Philips Semiconductors 2N7000 N-channel enhancement mode field-effect transistor
Philips Semiconductors
Original
07153 03aa02 771-2N7000AMO

marking BS SOT23

Abstract: 2N7000 circuits 2N7000 2N7002 N-channel 60 V, 1.8 â"¦, 0.35 A, SOT23-3L, TO-92 STripFETâ"¢ Power MOSFET Features Type VDSS RDS(on) max ID 2N7000 60 V < 5 â"¦(@10V) 0.35 A 2N7002 60 V , Packaging 2N7000 2N7000G TO-92 Bulk 2N7002 ST2N SOT23-3L Tape and reel November 2008 Rev 9 1/14 www.st.com 14 Contents 2N7000, 2N7002 Contents 1 Electrical , let o bs O 2/14 bs O 2N7000, 2N7002 1 Electrical ratings Electrical ratings
STMicroelectronics
Original
marking BS SOT23 2N7000 circuits
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