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Part : 2N6800 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $6.09 Price Each : $8.09
Part : 2N6800JANTX Supplier : Infineon Technologies Manufacturer : Avnet Stock : 1,385 Best Price : $10.09 Price Each : $11.49
Part : JANTX2N6800U Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $33.99 Price Each : $38.59
Part : JANTXV2N6800 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $22.09 Price Each : $24.99
Part : JANTXV2N6800U Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $72.39 Price Each : $82.09
Part : JANTX2N6800U Supplier : International Rectifier Manufacturer : Future Electronics Stock : - Best Price : $36.66 Price Each : $49.49
Part : JANTX2N6800 Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 120 Best Price : $15.7750 Price Each : $15.7750
Part : JANTXV2N6800 Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 52 Best Price : $32.7000 Price Each : $32.7000
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2N6800 Datasheet

Part Manufacturer Description PDF Type
2N6800 Defense Supply Center Columbus N-Channel FET Original
2N6800 International Rectifier TRANS MOSFET N-CH 400V 3A 3TO-205 Original
2N6800 International Rectifier HEXFET TRANSISTORS Original
2N6800 Microsemi N Channel MOSFET; Original
2N6800 Microsemi FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V TO-205AF TO-39 Original
2N6800 Semelab FET, 2 VThreshold, ID 3 A Original
2N6800 Semelab N-CHANNEL ENHANCEMENT POWER MOSFET Original
2N6800 Harris Semiconductor Power MOSFET Data Book 1990 Scan
2N6800 International Rectifier TO-39 Package N-Channel HEXFET Scan
2N6800 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan
2N6800 Motorola European Master Selection Guide 1986 Scan
2N6800 N/A Shortform Datasheet & Cross References Data Scan
2N6800 N/A Semiconductor Master Cross Reference Guide Scan
2N6800 N/A FET Data Book Scan
2N6800 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N6800 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N6800 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N6800 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N6800 Semelab MOS Transistors Scan
2N6800 Vishay Siliconix Shortform Siliconix Datasheet Scan
Showing first 20 results.

2N6800

Catalog Datasheet MFG & Type PDF Document Tags

2N6798 JANTXV

Abstract: 2N6880 2N6796, 2N6798, 2N6800, 2N6802 Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL , ://www.microsemi.com. FEATURES â'¢ JEDEC registered 2N6796, 2N6798, 2N6800 and 2N6802 number series. â , , 2N6798U, 2N6800U & 2N6802U MAXIMUM RATINGS @ TA = +25 ºC unless otherwise stated Parameters / Test , 2N6800 2N6802 Gate-Source Voltage, dc (2) Drain Current, dc @ TC = +25 ºC 2N6796 2N6798 2N6800 2N6802 (2) Drain Current, dc @ TC = +100 ºC 2N6796 2N6798 2N6800 2N6802 (3) Off-State Current
Microsemi
Original
2N6798 JANTXV 2N6880 MIL-PRF-19500/557 2N6796U T4-LDS-0047

MOSFET cross-reference

Abstract: 2N6796 JANTXV EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802 , 2N6800, 2N6800U 2N6802, 2N6802U 100 200 400 500 Gate to source voltage (threshold) 3403 , 2N6796, 2N6796U 2N6798, 2N6798U 2N6800, 2N6800U 2N6802, 2N6802U Static drain to source on-state , , 2N6798U 2N6800, 2N6800U 2N6802, 2N6802U See footnotes at end of table. 13 2.0 V dc V dc V , VSD 2N6796, 2N6796U 2N6798, 2N6798U 2N6800, 2N6800U 2N6802, 2N6802U 1.5 1.4 1.4 1.4 V
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Original
MOSFET cross-reference 2N6796 JANTXV 557h IRFE130 MIL-PRF-19500/557H MIL-PRF-19500/557G MIL-PRF-19500 JANHCB2N6796 JANHCA2N6796

DD 127 D TRANSISTOR

Abstract: transistor DD 127 D 2N6796, 2N6798, 2N6800, 2N6802 Qualified Levels: JAN, JANTX, JANTXV and JANS* Available on , . FEATURES · · JEDEC registered 2N6796, 2N6798, 2N6800 and 2N6802 number series. JAN, JANTX, and JANTXV , available in: U-18 LCC package (surface mount) 2N6796U, 2N6798U, 2N6800U & 2N6802U MAXIMUM RATINGS @ T A , °C Drain-Source Voltage, dc 2N6796 2N6798 2N6800 2N6802 Gate-Source Voltage, dc (2) Drain Current, dc @ T C = +25 ºC 2N6796 2N6798 2N6800 2N6802 (2) Drain Current, dc @ T C = +100 ºC 2N6796 2N6798
Microsemi
Original
DD 127 D TRANSISTOR transistor DD 127 D 2n6796 jantx 2N6798 JANTX U18 529

2N6796

Abstract: 2N6796U , N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX , 2/ TC = +100C IS IDM TJ and TSTG W 2N6796 2N6798 2N6800 2N6802 W V dc V , 2N6800 and 2N6802 Inch .116 .148 .180 .181 mm 2.95 3.76 4.57 4.60 NOTES , VDS V dc 2N6796 2N6798 2N6800 2N6802 100 200 400 500 V dc Min Max 2.0 4.0 2.0 4.0 , impedance 2/ Breakdown voltage, drain to source 2N6796 2N6798 2N6800 2N6802 Gate
DEPARTMENT OF DEFENSE
Original
c 2811 transistor irff130 marking MIL-PRF-19500/557F MIL-S-19500/557E

2N6799

Abstract: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel 2N6799 JTX, JTXV 2N6800 FEATURES · Fast , amplifiers. PRODUCT SUMMARY Part Number Vos RoSfen) Id 2N6799 2N6800 350V 400V io n 1.00 3.0A 3.0A MECHANICAL SPECIFICATIONS 11/83 2-130 UNITRODE 2N6799 2N6800 ABSOLUTE MAXIMUM , and Storage Tem perature Range Lead Temperature 14 2N6799 35 0* 35 0* 3 .0 * 14 2N6800 40 0* 40 0 , P R IN T E D IN U .S A . 2N6799 2N6800 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
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OCR Scan
Abstract: D â  0133107 SEM ELAB 2N6800 ELECTRICAL CHARACTERISTICS (T CASE = 25 , 2N6800 400* V 2.0* BVOSS Voltage Test Conditions Units Vq s » 0 Iq = 1 .0 m A , 2N6800 iQlon) 3.0 A V d s > 2 V d s (ON)/ v GS â' 10V On-State Drain Current! Static , Resistance* 2N6799 3.0* V 2N6800 3.0* V V q s = 10V , | D â  .V q s * 10V , I D * 3.0A 3.0A 2N6799 1.0* n v Gs 3 10 V - ' d 3 2.oa 2N6800 1.0* n V q s â -
OCR Scan
GDG31

transistor 65 C 3549

Abstract: 2N6800 File Number 1904 . Standard Power MOSFETs 2N6800 Power MOS Field-Effect Transistors N-Channel , carrier device N-CHANNEL ENHANCEMENT MODE TERMINAL DIAGRAM The 2N6800 is an n-channel enhancement-mode , . The 2N6800 is supplied in the JEDEC TO-205AF metal package. JEDEC TO-205AF MAXIMUM RATINGS , data. 3-549 Standard Power MOSFETs 2N6800 Electrical Characteristics @ Te = 25°C (Unless Otherwise , Typical saturation characteristics. 2N6800 10 2 5 10 20 SO 100 200 500 VDS. ORAIN TO SOURCE VOLTAGE
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OCR Scan
2N6756 transistor 65 C 3549 LH0063 QPL-19500 ICI 555 MIL-S-19500/ T0-204AA 2N6758 2N6760 2N6762

2n6800

Abstract: saft rectifier Volt, 1.0 Ohm N-Channel POWER MOSFET TRANSISTORS J X' JTXV 2N6800 T '3 9 -ô ? 1T 2N 6 79 9 , 2N6800 400* 400* 3.0* 14 ±20* 25* (See Fig. 14) 0.20* (See Fig. 14) (See Fig. 15 and 16) I * 100/iH 1 14 , Type 2N6799 2N6800 ALL ALL ALL Min. 350* 400* 2.0* 3.0 2.0* 350* 50* 20* - 18 11 7 5.0 Typ. Max. 4.0 , Doi os ai a 9347963 UNlTRODE CORP 92D 10581 t D 2N6799 2N6800 - 2)1 - 0 9 Fig , 92D 10582 D 2N 6799 2N6800 T ' 3 ? - O«? Fig. 10 - Typical Capacitance Vs. Drain-to-Source
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OCR Scan
saft rectifier

transistor c 557

Abstract: JANTX2N6796 2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800 , ° C PART NUMBER 2N6796 2N6798 2N6800 2N6802 S C H E M ATIC V DS, Vo t ls 100 200 400 , 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802 , JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802 ABSOLUTE MAXIMUM , JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802 ABSOLUTE MAXIMUM
Omnirel
Original
transistor c 557 MIL-S-19500/557
Abstract: Number 3097 Issue 1 Search Results Part number search for devices beginning "2N6800" Semelab Home Datasheets are downloaded as Acrobat PDF files. Fet Products PRODUCT 2N6800 2N6800LCC4 2N6800LCC4-JQR-B 2N6800SMD 2N6800SMD-JQR-B Polarity N-Channel N-Channel N-Channel N-Channel N-Channel Package , 2N6800 MECHANICAL DATA Dimensions in mm (inches) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 , 2N6800 ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter BVDSS TJ RDS(on Semelab
Original

FIT4 diode

Abstract: â'¢ Majority Carrier Device D escription The 2N6800 Is an n-channel enhancement-mode , integrated circuit. Term inai Diagram N -CH A NN E L ENHANCEM ENT MODE The 2N6800 is supplied in the , source-drain diode forward voltage. 4-86 4302271 â¡DS37C 14 fiT4 â  HAS 2N6800 0 40
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OCR Scan
FIT4 diode 00S37TS

2N6800

Abstract: {£) HARRIS A ug ust 1 9 9 1 2N6800 N -Channel Enhancem ent-M ode Power MOS Field-Effect Transistor P a ckage T O -2 0 5 A F Features · 3 A, 4 0 0 V BOTTOM VIEW * rD S ( o n ) = m , transfer characteristics. 4-85 N-CHANNEL POWER MOSFETs °C/W 2N6800 V o s , D R A IN T O S O , transconductance versus drain current. Fig. 7 - Typical source-drain diode forward voltage. 4-86 2N6800 , 2N6800 0 20 *0 60 80 100 120 1*0 T q, c a s e T E M P E R A T U R E S ) F/g
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OCR Scan
Abstract: LAB MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) SEME 2N6800 N­CHANNEL POWER MOSFET BVDSS ID RDS(on) 400V 3.0A 1.0W 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 0.41 (0.016) 0.53 (0.021) d ia . 5 .0 8 (0 .2 0 0 ) ty p . 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 , BVDSS STATIC ELECTRICAL RATINGS Drain ­ Source Breakdown Voltage SEME 2N6800 Test Conditions Semelab
Original

2N6800

Abstract: 2N6800 MECHANICAL DATA Dimensions in mm (inches) N­CHANNEL ENHANCEMENT POWER MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. BVDSS ID RDS(on) 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 400V 3.0A 1.0 5.08 (0.200) typ. FEATURES 2.54 (0.100) 2 1 · AVALANCHE ENERGY RATED 3 0.74 (0.029) 1.14 , Document Number 3097 Issue 1 2N6800 ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated
Semelab
Original

2N6800

Abstract: SEME 2N6800 LAB MECHANICAL DATA Dimensions in mm (inches) N­CHANNEL POWER MOSFET 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . BVDSS ID RDS(on) 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . 400V 3.0A 1.0W 5 .0 8 (0 .2 0 0 ) ty p . , )1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 9/00 SEME 2N6800
Semelab
Original
Abstract: 2N6800 Dimensions in mm (inches). 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET. 5.08 (0.200) typ. VDSS = 400V 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) ID = 3A RDS(ON) = 1 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and Semelab
Original

THOMSON DISTRIBUTOR 58e d

Abstract: 9026873 20 IRFF332 1.5 3.0 12 25 2N6800 1.0 3.0 14 25 (3) IRFF330 1.0 3.5 14 25
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OCR Scan
IRFF014 IRFF034 IRFF113 IRFF111 IRFF123 IRFF121 THOMSON DISTRIBUTOR 58e d 9026873 THOMSON 58E THOMSON 58E CASE OUTLINE THOMSON DISTRIBUTOR T0-205AF
Abstract: JANTXV2N6798 IRFF310 2N6786 JANTX2N6786 JANTXV2N6786 IRFF320 2N6792 JANTX2N6792 JANTXV2N6792 IRFF330 2N6800 -
OCR Scan
IRFF024 IRFF110 2N6782 JANTX2N6782 JANTXV2N6782 IRFF120
Abstract: HEXFET Power MOSFETs Hermetic Package TO-39 N-Channel Part Number IRFF014 IRFF034 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 IRFF112 2N6782 IRFF110 IRFF122 2N6788 IRFF120 IRFF132 IRFF130 2N6796 IRFF213 IRFF211 IRFF223 IRFF221 IRFF233 IRFF231 IRFF212 2N6784 IRFF210 IRFF222 2N6790 IRFF220 IRFF232 IRFF230 IRFF6798 IRFF313 IRFF311 IRFF323 IRFF321 IRFF333 IRFF331 IRFF312 2N6786 IRFF310 IRFF322 2N6792 IRFF320 IRFF332 2N6800 IRFF330 IRFF423 IRFF421 IRFF433 IRFF431 IRFF422 IRFF420 2N6794 IRFF432 IRFF430 -
OCR Scan
FF332

smd 662

Abstract: 2N7422 2N6794, IRFF420 2N6794U, IRFE420 2N6760, IRF330 2N6800, IRFF330 2N6800U, IRFE330 2N6762, IRF430
International Rectifier
Original
2N6845U 2N7389 2N7422 2N7422U 2N7383 2N7219U smd 662 2n7425 2N7426 MO036 2N6782U IRFE110 2N7334 IRFG110 2N7336
Abstract: mount equivalent of JEDEC registered 2N6796, 2N6798, 2N6800 and 2N6802 number series. â'¢ JAN , high-reliability applications. (Leaded Top Hat) 2N6796, 2N6798, 2N6800 & 2N6802 MAXIMUM RATINGS @ TA = +25 Microsemi
Original
T4-LDS-0047-1

DD 127 D transistor

Abstract: 2n6798u registered 2N6796, 2N6798, 2N6800 and 2N6802 number series. JAN, JANTX, and JANTXV qualifications are , -205AF (TO-39) package (Leaded Top Hat) 2N6796, 2N6798, 2N6800 & 2N6802 · APPLICATIONS / BENEFITS · ·
Microsemi
Original
Showing first 20 results.