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Part : 2N6758 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $8.39 Price Each : $10.69
Part : 2N6758JANTX Supplier : Infineon Technologies Manufacturer : Avnet Stock : 60 Best Price : $17.59 Price Each : $19.89
Part : JANTXV2N6758 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $25.39 Price Each : $28.79
Part : 2N6758 Supplier : Infineon Technologies Manufacturer : Newark element14 Stock : - Best Price : $9.80 Price Each : $16.73
Part : JANTX2N6758 Supplier : International Rectifier Manufacturer : Future Electronics Stock : - Best Price : $17.68 Price Each : $18.78
Part : 2N6758 Supplier : Harris Semiconductor Manufacturer : Bristol Electronics Stock : 304 Best Price : $3.2144 Price Each : $7.84
Part : JANTX2N6758 Supplier : Harris Semiconductor Manufacturer : basicEparts Stock : 7 Best Price : - Price Each : -
Part : JANTX2N6758 Supplier : International Rectifier Manufacturer : basicEparts Stock : 26 Best Price : - Price Each : -
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2N6758 Datasheet

Part Manufacturer Description PDF Type
2N6758 International Rectifier TRANS MOSFET N-CH 200V 9A 2TO-204AA Original
2N6758 Microsemi FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V TO-3 Original
2N6758 Microsemi N Channel MOSFET; Package: TO-204AA; Original
2N6758 Fairchild Semiconductor N-Channel Power MOSFETs, 9A, 150V/200V Scan
2N6758 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. Scan
2N6758 Harris Semiconductor Power MOSFET Data Book 1990 Scan
2N6758 International Rectifier TO-3 N-Channel Hexfet Power MOSFETS Scan
2N6758 IXYS High Voltage Power MOSFETs Scan
2N6758 Motorola Switchmode Datasheet Scan
2N6758 Motorola European Master Selection Guide 1986 Scan
2N6758 Motorola Power Transistor Selection Guide Scan
2N6758 N/A Shortform Datasheet & Cross References Data Scan
2N6758 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N6758 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N6758 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N6758 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N6758 N/A Semiconductor Master Cross Reference Guide Scan
2N6758 N/A FET Data Book Scan
2N6758 National Semiconductor N-Channel Power MOSFETs Scan
2N6758 Semelab MOS Transistors Scan
Showing first 20 results.

2N6758

Catalog Datasheet MFG & Type PDF Document Tags

2N6758

Abstract: UPS RELAY CIRCUIT " 2N6757/2N6758 F/\[RCHit-D N-Channel Power MOSFETs, A Schlumberger Company 9 A, 150 V/200 V ' T , Characteristic Rating 2N6758 Rating 2N6757 Unit Vdss Drain to Source Voltage 200 150 V Vdgr Drain to Gate , 3469674 FAIRCHILD SEMICONDUCTOR 84D 27796 D 2N6757/2N6758 T-39-11 Electrical Characteristics (Tc = 25 , (BR)DSS Drain Source Breakdown Voltage 2N6758 2N6757 V VGS = 0 V, lD = 1 mA 2002 1502 , On-Resistance 2N6758 2N6757 2N6758 2N6757 n VGS=10 V lD = 6 A lD = 5 A lD = 6 A, Tc=125°C lD = 5 A, Tc= 125Â
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OCR Scan
DDE7715 UPS RELAY CIRCUIT 2N6757/2N6758 2N67SS

DD 127 D TRANSISTOR

Abstract: transistor DD 127 D 2N6756, 2N6758, 2N6760 and 2N6762 Qualified Levels: JAN, JANTX, and JANTXV Available on , 2N6756, 2N6758, 2N6760 and 2N6762 switching transistors are military qualified up to the JANTXV level for , registered 2N6756, 2N6758, 2N6760 and 2N6762 number series. JAN, JANTX, and JANTXV qualifications are , Voltage, dc 2N6756 2N6758 2N6760 2N6762 Gate-Source Voltage, dc (2) Drain Current, dc @ T C = +25 ºC 2N6756 2N6758 2N6760 2N6762 (2) Drain Current, dc @ T C = +100 ºC 2N6756 2N6758 2N6760 2N6762 (3
Microsemi
Original
DD 127 D TRANSISTOR transistor DD 127 D 2N6758 JANTXV 2N6762 JANTX 121465 2N6760 JANTX MIL-PRF-19500/542 T4-LDS-0111

2N6758

Abstract: 2n677 Standard Power MOSFETs_ 2N6757, 2N6758 Power MOS Field-Effect Transistors File Number 1587 , DIAGRAM The 2N6757 and 2N6758 are n-channel enhancement-mode silicon-gate power field-effect transistors , MOSFETs 2N6757, 2N6758 Electrical Characteristic* @ Tc = 25°C (Unlese OtharwiM Specified) Parameter , VGS ~® N0= 1.0 mA 2N6758 200 - - V vGS(th> Gate Threshold Voltage ALL 2.0* 4.0* V VDS " VGS , On-6tata Voltage Q 2N67S.7 - - 4.8* V VGS=10V,lp = 8A 2N6758 - - 3.6* V VGS" 10v- 'D * 9A RDS(on
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OCR Scan
2n677 2N67 zn675 30saa T0-204AA 92CS- ZN6758

1SV50

Abstract: 2N6151 Field-Effect Transistors _ 1 T-39-11 Standard Power MOSFÃ'Ts 2N6757, 2N6758 N-Channei Enhancement-Mode Power , characteristics â  High input impedance â  Majority carrier device The 2N6757 and 2N6758 are n-channel , =] fi r T-39-11 2N6757, 2N6758 Electrical Characteristic« I ! Tc = 25°C (Unlets Otherwise , 2N6757 150 - - V VGS "" 0 â  1 0 mA 2N6758 200 - - V vCS(lh) CatathrHhold Volt««! ALL 2.0* - 4.0 , Sou»e» On-StaU RtliltKK« 0 2N6757 - 0.4 0 6* n VGS« 10V. ID. 5A 2N6758 - 0 25 0 4* n V0S â'¢ 10V
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OCR Scan
1SV50 2N6151 92C5-J760I V01TS 2N67S8 2NI754 2NS757 2N6751

2N6756

Abstract: 2N6758 , N-CHANNEL, SILICON TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC This , 75 75 75 75 4 4 4 4 100 200 400 500 100 200 400 500 2N6756 2N6758 2N6760 , TJ = 150qC A dc 2N6756 2N6758 2N6760 2N6762 A (pk) qC ohms ohms qC/W 14.0 , ID = ID2 VDS = 80 percent TJ = +25qC of rated VDS V dc 2N6756 2N6758 2N6760 2N6762 , and JANKCB (B-version) die dimensions for 2N6756, 2N6758, 2N6760, and 2N6762. 5 MIL-PRF
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Original
JANHCA6756 MOSFET IRF230 MIL-PRF-19500/542F MIL-S-19500/542E MIL-PRF-19500

2N6757

Abstract: JANTXV-, JANTX-, 2N6758 and 2N6757 Devices Absolute Maximum Rating* Parameter V DS V DGR l0 9 T c -2 5 , 2N6758 Min. 150 200 2 .0 * - Typ. 0.1 0.2 Max. 4 .0 * 100* 100* 1.0* 4.0* 4 .8 * 3 .6 * 0 .6 * 0 , ALL ALL 2N6757 2N6758 2N6757 2N6758 v DS(on) S tatic Drain-Source On-State Voltage Q R DS(on , * 0.4 0.25 5.0 600 250 80 2N6757 2N6758 -1 0 V ,Id - 5 A ,T c = 1 2 5 °C V GS 10V, l 0 = , Forward Voltage ^ 2N6757 2N6758 2N6757 2N6758 2N6757 2N6758 >rr °R R Reverse Recovery Tim e Reverse
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OCR Scan
00GT3G MIL-S-19500/542 SN6758 SIVI6757 G-284 G-285

2N6760 equivalent

Abstract: 2N6758 equivalent dimensions for 2N6756, 2N6758. 6 MIL-PRF-19500/542H 3.6 Electrostatic discharge protection. The , EFFECT, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND , 2N6758 2N6760 2N6762 IS IDM TJ and TSTG Type (4) VISO 100,000 feet altitude Max rDS(on) (1) VGS = 10 V dc, ID = ID2 RJC max TJ = +25°C TJ = +150°C A dc 2N6756 2N6758 , rated VDS V dc 2N6756 2N6758 2N6760 2N6762 100 200 400 500 V dc Min Max 2.0 4.0 2.0
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Original
2N6760 equivalent 2N6758 equivalent Transistor irf230 104-2 substitution IRF130 IRF230 MIL-PRF-19500/542G JANTX2N6756 JAN2N6756 JANHCA2N6756 JANKCA6756 JANHCC2N6756

2N677

Abstract: 2N6758 Standard Power MOSFETs_ 2N6757, 2N6758 Power MOS Field-Effect Transistors File Number 1587 , DIAGRAM The 2N6757 and 2N6758 are n-channel enhancement-mode silicon-gate power field-effect transistors , MOSFETs 2N6757, 2N6758 Electrical Characteristic* @ Tc = 25°C (Unlese OtharwiM Specified) Parameter , VGS ~® N0= 1.0 mA 2N6758 200 - - V vGS(th> Gate Threshold Voltage ALL 2.0* 4.0* V VDS " VGS , On-6tata Voltage Q 2N67S.7 - - 4.8* V VGS=10V,lp = 8A 2N6758 - - 3.6* V VGS" 10v- 'D * 9A RDS(on
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OCR Scan
2N6758 JANTX 2N6766 JANTX mosfet 2n6788 qpl-19500 MIL-S-19500/ 2N6764 2N6766 T0-204AE 2N6768 2N6770

2N675B

Abstract: 2N6757 +25°C ) Unless Otherwise Specified 2N6757 2N6758 U N IT S D rain-Source V o lta ge , 2N6757 2N6758 v GS(th) 'g s s f 'g s s r 'o s s Gata Threthold Voltaga Gata - Body Leakage Forward Gata - 8ody Leakage Ravarta Zaro Gala Voltaga Drain Currant ALL 2N6757 2N675B 2N6757 2N6758 R DS(on , Diode) Diode Forward Voltage ( ? ) 2N6757 2N6758 2N6757 2N6758 2N67S7 2N6758 trr °RR Reverse Recovery , Saturation Characteristics (2N6757) Fig. 6 - Typical Saturation Characteristics (2N6758)
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OCR Scan

sy 710 diode

Abstract: IC 6757 POWER MOSFET TRANSISTORS , JTX 200 Volt, 0.4 Ohm N-Channel 2N6757 J' JTX' JTXV 2N6758 , SUMMARY Part Number 2N6757 2N6758 Vds RoS(on) ·d 150 V 200V o.6n o.4n 8A 9A FN-3 MECHANICAL SPECIFICATIONS 2N6757 JAN, JANTX, & JANTXV 2N6758 2 2 ]! «1175, MAX DIA 1)43 10450) < 0 >361 , ) 11/83 2-48 h U N IT R O D E 2N6757 JAN, JANTX, & JANTXV 2N6758 ABSOLUTE MAXIMUM RATINGS , n) 150* 8.0* 5.0* 12 ¿20* 75* (See Fig. 11) 30* (See Fig. 11) 2N6758 200* 200* 9.0* 6.0* IS
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OCR Scan
sy 710 diode IC 6757 diode sy 710 IL-S-19500/542A

2N6758

Abstract: S ource-to-D rain D iode Characterized fo r Use W ith Inductive Loads · 2N6758 is Q u a lifie d to M , TMOS POWER MOSFET DATA 3-10 2N6758, JTX, JTXV ELECTRICAL CHARACTERISTICS (Tc = 25C C unless otherw , / / / / / / / / ? 3 o o > Z ~ I 2N6758, JTX, JTXV OPERATING AREA INFORMATION FIGURE 8 - MAXIMUM RATED SWITCHING SAFE OPERATING AREA FIGURE 9 - MAXIMUM RATED FORWARD BIAS SAFE OPERATING AREA, 2N6758
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OCR Scan
19500/542A
Abstract: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6758 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain â'" Source Voltage VDS , to Source On State Resistance Operating & Storage Temperature TO-204AA (TO-3) 2N6758 Note Microsemi
Original
T4-LDS-0112

2N6758

Abstract: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6758 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain ­ Source Voltage VDS 200 , > +25°C (2) VGS = 10Vdc, ID = 6A TO-204AA (TO-3) 2N6758 ELECTRICAL CHARACTERISTICS (TA = +25°C
Microsemi
Original

2N6758 equivalent

Abstract: 2N6758 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6758 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain ­ Source Voltage VDS 200 , State Resistance Operating & Storage Temperature TO-204AA (TO-3) 2N6758 Note: (1) Derated
Microsemi
Original

irf3203

Abstract: MTM12N20 IRF232 75 0.4 IRF230 9 2N6758 4 MTM8N20 8 0.35 6 MTM12N20 12 100 0.22 10 IRF242« 16
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OCR Scan
MTM4N45 IRF443 IRF441 IRF453 IRF451 MTM15N45 irf3203 MTM15N35 DJ05AH mtm5n35 MTM10N25 MTM15 MTM7N45

6757

Abstract: 2N6758 UNITRODE CORP t s o o i c mt , 9347963 UNITRODE CORP ~~~ 92D 1 04 96 D POWER MOSFET TRANSISTORS 2 0 0 V o lt, 0 .4 O h m N -C h a n n e l j ; j t x , j t x v 2N6758 T - ' b l - i i " FEATURES · Fast Switching · Low Drive Current » Ease of Paralleling · No Second Breakdown · Excellent Temperature Stability · Qualified to M 1L-S-19500/542A DESCRIPTION The , ) Pulsed Source Current (8 o d y Diode) Oiode Forw ard Voltage ^ 2N 6757 2N 6758 2 N 6757 2N6758 2N 6757 2N
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OCR Scan
6757
Abstract: International ïO R lR e c t if ie r Government and Space HEXFET Power MOSFETs Hermetic Package N-Channel Part Number IRF034 IRF044 IRF054 IRF130 2N6756 JANTX2N6756 JANTXV2N6756 IRF140 IRF150 2N6764 JANTX2N6764 JANTXV2N6764 IRF230 2N6758 JANTX2N6758 JANTXV2N6758 IRF240 IRF250 2N6766 JANTX2N6766 JANTXV2N6766 IRF330 2N6760 JANTX2N6760 JANTXV2N6760 IRF340 IRF350 2N6768 JANTX2N6768 JANTXV2N6768 IRF360 IRF430 2N6762 JANTX2N6762 JANTXV2N6762 IRF440 IRF450 2N6770 JANTX2N6770 JANTXV2N6770 IRF460 IRFAC30 IRFAC40 -
OCR Scan
IRFAE30 IRFAE40 IRFAE50 IRFAF30 IRFAF40 IRFAF50

TO-254

Abstract: IRF450 equivalent .X J P CT'Sificonix in c o r p o r a te d Industry Standard Military MOSFETs Part Number 2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 2 N6962 2N6963 2N6964 2N6965 2N7071 2N7072 2N7073 2N7074 2N7075 2N7076 2N7077 2N7078 2N7079 2N7080 2N7081 2N7082 2N7085 2N7086 2N7089 2N7090 2N7091 2N7092 V(BRJDSS *0 ÏDS(ON) (A) 100 200 400 500 100 200 400 500 100 200 400 500 100 200 400 500 100 200 400 500 100 200 400 500 100 200 400 500
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OCR Scan
T0-204 TO-254 IRF450 equivalent T0-205 T0-210 RF450 IRFF120 IRFF220

smd 662

Abstract: 2N7422 , IRHM7054 2N7394U, IRHN7054 2N6790, IRFF220 2N6790U, IRFE220 2N6847, IRFF9220 2N6847U, IRFE9220 2N6758
International Rectifier
Original
2N6845U 2N7389 2N7422 2N7422U 2N7383 2N7219U smd 662 2n7425 2N7426 MO036 2N6782 IRFF110 2N6782U IRFE110 2N7334

idm 73

Abstract: IRF244 H EXFET Power MOSFETs Hermetic Package TO-3 N-Channel Vos Drafn Part Number IRF223 IRF221 IRF233 IRF231 IRF243 IRF241 IRF253 IRF251 IRF222 IRF220 IRF232 2N6758 IRF230 IRF242 IRF240 IRF252 IRF250 2N6766 IRF225 IRF224 IRF235 IRF234 IRF245 IRF244 IRF255 IRF254 IRF323 IRF321 IRF333 IRF331 IRF343 IRF341 IRF353 IRF351 IRF322 IRF320 IRF332 IRF330 2N6760 IRF342 IRF340 IRF352 2N6768 IRF350 IRF362 IRF360 IRF423 IRF421 IRF433 IRF431 IRF443 1RF441 IRF453 IRF451 International S
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OCR Scan
idm 73
Abstract: and 2N6758 are n-channel enhancement-mode silicon-gate power field-effect transistors designed for -
OCR Scan
Abstract: â  Ã1331Ã7 OODDSÃb SEMELAB 2N6758 - - Â -
OCR Scan

2n6152

Abstract: 2N6757 800 450 150 25 TO-204AA 2N6758 I» n 200 ±20 9.0 75 ±100 ±20 1000 200 2.0 4.0 0.4 10 6 3.0 6 , ±100 ±20 1000 150 2 4 0.6 10 5 3.0 6.0 800 450 150 25 TO-204AA 2N6758 MOT N 200 ±20 9.0 75  , 25 TO-204AA 2N6758 SILI CON IX N 200 ±20 9.0 75 ±100 ±20 1000 200 2.0 4.0 0.4 10 6.0 9.0 10 3.0
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OCR Scan
2N6755 2N6759 2N676 2N6761 2N6763 2n6152 1N7000 2N61B 2N6765

T0220H

Abstract: 2N3824 0.25 12 75 2H6756 REQ N-CH T03 100 0.45 14 75 2N6757 REQ N-CH T03 150 0.6 8 75 2N6758 8EQ N-CH T03
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OCR Scan
2N3824 2N3824LP 2N4391 2N4393 2N4416 2N6659 T0220H 2H4392

1N7001

Abstract: 2N6155 800 450 150 25 TO-204AA 2N6758 I» n 200 ±20 9.0 75 ±100 ±20 1000 200 2.0 4.0 0.4 10 6 3.0 6 , ±100 ±20 1000 150 2 4 0.6 10 5 3.0 6.0 800 450 150 25 TO-204AA 2N6758 MOT N 200 ±20 9.0 75 Â
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OCR Scan
2N6155 1N7001 4900 SIEMENS BUZ54 2N6823 BUZ211 BUZ64 BUZ71 T0-220AB BUZ72A BUZ73A 8UZ21
Showing first 20 results.