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2N6674 Datasheet, Circuit, PDF, & Application Note Results
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| Datasheet Search Results |
1 - 17 of about 17 for 2N6674 |
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2N6674 |
Advanced Semiconductor, Inc. |
Silicon Transistor Selection Guide |
395.11 Kb, 5 Pages. |
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2N6674 |
Allen-Bradley Co. |
Electronic Component Data Book 1985 |
147.18 Kb, 2 Pages. |
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2N6674 |
Central Semiconductor |
TO-3 Case Power Transistors |
43.12 Kb, 1 Pages. |
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2N6674 |
Central Semiconductor |
Power Transistors |
51.59 Kb, 1 Pages. |
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2N6674 |
Ferranti Semiconductors |
Quick Reference Guide 1985 |
70.52 Kb, 2 Pages. |
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2N6674 |
General Electric Solid State |
High Voltage Bipolar Power Transistors |
49.14 Kb, 1 Pages. |
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2N6674 |
Harris Semiconductor |
10 Amp, SwitchMax Power Transistors |
285.09 Kb, 6 Pages. |
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2N6674 |
Microsemi Corporation |
NPN Power Silicon Transistor |
59.34 Kb, 2 Pages. |
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2N6674 |
RCA Solid State |
Product Guide 1979 |
73.8 Kb, 1 Pages. |
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2N6674 |
Semelab |
Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=300 / Ic=15 / Hfe=8-20 / fT(Hz)=15M / Pwr(W)=175 |
10.72 Kb, 1 Pages. |
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2N6674 |
Semiconductor Technology, Inc. |
NPN & PNP High Voltage Silicon High Power Transistors |
153.91 Kb, 1 Pages. |
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2N6674 |
SGS-Thomson |
NPN HIGH VOLTAGE POWER TRANSISTOR |
64.8 Kb, 3 Pages. |
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2N6674 |
ST Microelectronics |
Shortform Data Book 1988 |
47.66 Kb, 1 Pages. |
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2N6674 |
Thomson-CSF |
Shortform Semiconductor Catalogue 1982 |
37.76 Kb, 1 Pages. |
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2N6674JAN |
New England Semiconductor |
NPN POWER SILICON TRANSISTOR |
52.74 Kb, 2 Pages. |
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2N6674JANTX |
New England Semiconductor |
NPN POWER SILICON TRANSISTOR |
52.74 Kb, 2 Pages. |
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2N6674JANTXV |
Microsemi Corporation |
NPN POWER SILICON TRANSISTOR |
45.81 Kb, 2 Pages. |
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| Contextual Datasheet Results |
1 - 11 of about 11 for 2N6674 |
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First line: SavantIC Semiconductor Product Specification Silicon Power Transistors DESCRIPTION TO-3 package voltagehigh speed Abstract: .. SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6674 2N6675 DESCRIPTION ·With TO-3 package ·High voltage,high speed APPLICATIONS ·Switching regulators .. datasheet abstract.. |
107.64 Kb |
3 Pages |
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First line: INCHANGE Semiconductor Product Specification Silicon Power Transistors DESCRIPTION Power Dissipation Switching Speed Abstract: .. isc Silicon NPN Power Transistors 2N6674/6675. DESCRIPTION. ·High Power Dissipation ·High Switching Speed ·Collector-Emitter Breakdown Voltage- : V BR CEO= 300V Min - 2N6674. = 400V Min .. datasheet abstract.. |
159.81 Kb |
2 Pages |
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First line: JMnic Product Specification Silicon Power Transistors DESCRIPTION With TO-3 package High voltagehigh Abstract: .. JMnic Product Specification Silicon NPN Power Transistors 2N6674 2N6675 DESCRIPTION ·With TO-3 package ·High voltage,high speed APPLICATIONS ·Switching regulators ·Inverters ·Solenoid .. datasheet abstract.. |
36.26 Kb |
3 Pages |
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First line: TECHNICAL DATA POWER SILICON TRANSISTOR Qualified MIL-PRF-19500 / 537 Devices 2N6674 2N6675 2N6689 2N6690 Abstract: .. 2N6674 2N6675 2N6689 2N6690. JAN JANTX JANTXV. MAXIMUM RATINGS. Ratings Symbol 2N6674. 2N6689 2N6675 2N6690 Unit. Collector-Emitter Voltage VCEO 300 400 Vdc. Collector-Base Voltage VCBO 450 650 .. datasheet abstract.. |
52.74 Kb |
2 Pages |
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First line: TECHNICAL DATA POWER SILICON TRANSISTOR Qualified MIL-PRF-19500 / 537 Devices 2N6674 2N6675 2N6689 2N6690 Abstract: .. 2N6674 2N6675 2N6689 2N6690. JAN JANTX JANTXV. MAXIMUM RATINGS Ratings Symbol 2N6674. 2N6689 2N6675 2N6690 Unit. Collector-Emitter Voltage VCEO 300 400 Vdc. Collector-Base Voltage VCBO 450 650 .. datasheet abstract.. |
59.34 Kb |
2 Pages |
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First line: TECHNICAL DATA POWER SILICON TRANSISTOR Qualified MIL-PRF-19500 / 537 Devices 2N6674 2N6675 2N6689 2N6690 Abstract: .. 2N6674 2N6675 2N6689 2N6690. JAN JANTX JANTXV. MAXIMUM RATINGS Ratings Symbol 2N6674. 2N6689 2N6675 2N6690 Unit. Collector-Emitter Voltage VCEO 300 400 Vdc. Collector-Base Voltage VCBO 450 650 .. datasheet abstract.. |
45.81 Kb |
2 Pages |
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First line: 2N6674 Dimensions inches . Bipolar Device Hermetically sealed Metal Package. max. Bipolar Device. Abstract: .. 2N6674. Bipolar NPN Device. VCEO = 300V IC = 15A All Semelab hermetically sealed products. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications .. datasheet abstract.. |
10.72 Kb |
1 Pages |
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First line: Power Transistors TO-3 Case Continued TYPE BVCBO BVCEO TYP --20 --30 --60 Abstract: .. 2N6674 15 175 350 300 8.0 20 - - 5.0 15 15. 2N6675 15 175 450 400 8.0 20 - - 5.0 15 15. BDW51 BDW52 15 125 45 45 20 150 5.0 3.0 10 3.0. BDW51A BDW52A 15 125 60 60 20 150 5.0 3.0 10 3.0. BDW51B BDW52B 15 125 80 80 20 150 5 .. datasheet abstract.. |
51.59 Kb |
1 Pages |
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First line: Power Transistors TO-3 Case TYPE BVCBO BVCEO --60 --60 --100 VCE SAT MHz Abstract: .. 2N6674 15 175 350 300 8.0 20 - - 5.0 15 15. 2N6675 15 175 450 400 8.0 20 - - 5.0 15 15. BDW51 BDW52 15 125 45 45 20 150 5.0 3.0 10 3.0. BDW51A BDW52A 15 125 60 60 20 150 5.0 3.0 10 3.0. BDW51B BDW52B 15 125 80 80 20 150 5 .. datasheet abstract.. |
49.45 Kb |
4 Pages |
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First line: QML-9500-19 TABLE CONTENTS PART NUMBER 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 Abstract: .. 2N6674 - 2N6675 537 X X X X. 2N6676, 2N6678 538 X X X X. 2N6689 - 2N6690 537 X X X X. 2N6691, 2N6693 538 X X X X. 2N6764, 2N6766, 2N6768, 2N6770 543 X X X X. 2N682, 2N683, 2N685 - 2N692 108 X X X. 2N696 - 2N697 & S 99 X X. 2N6987 .. datasheet abstract.. |
255.27 Kb |
1 Pages |
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First line: 2N3054 2N3055 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 Abstract: .. 2N6262 TO-3 2N6357 TO-3 2N6489 TO-220 2N6674 TO-3. 2N6263 TO-66 2N6358 TO-3 2N6490 TO-220 2N6675 TO-3. 2N6264 TO-66 2N6359 TO-3 2N6491 TO-220 2N676 TO-3. 2N6270 TO-3 2N6360 TO-3 2N6492 TO-3 2N6677 .. datasheet abstract.. |
148.38 Kb |
26 Pages |
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