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1 - 36 of about 36 for 2N6674 |
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First line: 2N6675 Silicon Power Transistors DESCRIPTION TO-3 package voltage,high speed APPLICATIONS regulators relay drivers circuits Abstract: .. SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6674 2N6675 2N6675 DESCRIPTION With TO-3 package High voltage,high speed APPLICATIONS Switching regulators .. Tags: 2N6675 datasheet abstract.. |
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First line: NPN Transistor 10A 400V Silicon Power Transistors DESCRIPTION Power Dissipation Switching Speed Breakdown Voltage: V(BR)CEO= 300V(Min)- 2N6674 400V(Min)- 2N6675 APPLICATIONS Designed high voltage switching applications such regulators relay drivers circuits ABSOLUTE MAXIMUM RATINGS(Ta=25) Abstract: .. isc Silicon NPN Power Transistors 2N6674/6675. DESCRIPTION. High Power Dissipation High Switching Speed Collector-Emitter Breakdown Voltage- : V BR CEO= 300V 300V Min - 2N6674. = 400V 400V Min .. Tags: NPN Transistor 10A 400V Solenoid Driver 2a 2N6674 2N6675 |
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First line: 2N6675 Silicon Power Transistors DESCRIPTION With TO-3 package High voltage,high speed APPLICATIONS Switching regulators Inverters Solenoid relay drivers Deflection circuits Abstract: .. JMnic Product Specification Silicon NPN Power Transistors 2N6674 2N6675 2N6675 DESCRIPTION With TO-3 package High voltage,high speed APPLICATIONS Switching regulators Inverters Solenoid .. Tags: 2N6675 datasheet abstract.. |
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First line: Qualified MIL-PRF-19500/537 Devices 2N6674 2N6675 2N6689 2N6690 Qualified Level JANTX JANTXV Abstract: .. 2N6674 2N6675 2N6675 2N6689 2N6689 2N6690 2N6690 . JAN JANTX JANTXV. MAXIMUM RATINGS Ratings Symbol 2N6674. 2N6689 2N6689 2N6675 2N6675 2N6690 2N6690 Unit. Collector-Emitter Voltage VCEO 300 400 Vdc. Collector-Base Voltage VCBO 450 650 .. Tags: 2n6675 2N6674 2N6675 2N6689 2N6690 |
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First line: Qualified MIL-PRF-19500/537 Devices 2N6674 2N6675 2N6689 2N6690 Qualified Level JANTX JANTXV Abstract: .. 2N6674 2N6675 2N6675 2N6689 2N6689 2N6690 2N6690 . JAN JANTX JANTXV. MAXIMUM RATINGS Ratings Symbol 2N6674. 2N6689 2N6689 2N6675 2N6675 2N6690 2N6690 Unit. Collector-Emitter Voltage VCEO 300 400 Vdc. Collector-Base Voltage VCBO 450 650 .. Tags: Ts 537 2N6690 2N6674 2N6675 2N6689 2N6690 |
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First line: Qualified MIL-PRF-19500/537 Devices 2N6674 2N6675 2N6689 2N6690 Qualified Level JANTX JANTXV Abstract: .. 2N6674 2N6675 2N6675 2N6689 2N6689 2N6690 2N6690 . JAN JANTX JANTXV. MAXIMUM RATINGS. Ratings Symbol 2N6674. 2N6689 2N6689 2N6675 2N6675 2N6690 2N6690 Unit. Collector-Emitter Voltage VCEO 300 400 Vdc. Collector-Base Voltage VCBO 450 650 .. Tags: 2N6674 2N6675 2N6689 2N6690 |
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First line: 7^237 002^417 SCS-THOMSON 2N6674 S-TH0MS0N HIGH VOLTAGE POWER TRANSISTORS SWITCHING REGULATORS INVERTERS SOLENOID RELAY DRIVERS MOTOR CONTROLS Abstract: .. 7^237 002^417 â– S SCS-THOMSON 2N6674 ^Â iLlieraWÃ Oi__2N6675 2N6675 S G S-TH0MS0N 30E D NPN HIGH VOLTAGE POWER TRANSISTORS â– SWITCHING REGULATORS â– INVERTERS â– SOLENOID AND RELAY DRIVERS â .. Tags: datasheet abstract.. |
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First line: RJH6674 2N6674, 2N6675, RJH6674, RJH6675 HARRIS SEMICOND SECTOR 10-A SwitehMaX High-Voltage N-P-N Types Off-Line Power Supplies Other High-Voltage Switching Applications File Number 1164 4302271 002DG54 Fast switching speed Abstract: .. Power Transistors - LB 2N6674, 2N6675 2N6675 , RJH6674 RJH6674 , RJH6675 RJH6675 HARRIS SEMICOND SECTOR 27E 10-A 10-A SwitehMaX Power Transistors High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage .. Tags: RJH6674 datasheet abstract.. |
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First line: transformerless* transformerless* 2N6674 2N6675 series transistors high-voltage, high-gain, NPN, ampere switching transistors Industrial Military Service. series particularly well suited off-line (transformerless) switching power supplies operating high KHz. Other applications include Inverters, Mo Abstract: .. SPECIFICATIONS General The 2N6674 and 2N6675 2N6675 series transistors are high-voltage, high-gain, NPN, 10 ampere switching transistors for Industrial and Military Service. The series is particularly .. Tags: transformerless*Â transformerless* datasheet abstract.. |
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First line: 15950 PORP/POWER 00506 T'33'/3 ItllSISG QDOOSDb .265" (6.7mm) .265" (6.7mm) BASE BONDING AREA: Appro*. .020" .050" (0.5 13mm) EMITTER BONDING AREA: Appro*. .050" .050"(13 1.3mm) CCC6675 Power Transistor Chip Epitaxial Diffused, Glass Passivateci Abstract: .. – Chip thickness-18 thickness-18 Â 2 mil 460 Â 50 microns â– Reference device types: 2N6674 2N6675 2N6675 Electrical Characteristics At 25Â C The chip is 100% probed to the conditions and limits specified. CHARACTERISTIC .. Tags: 5609 transistor 5609 5609 t transistor datasheet abstract.. |
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First line: 2N6674 Dimensions (inches). Abstract: .. 2N6674. Bipolar NPN Device. VCEO = 300V 300V IC = 15A All Semelab hermetically sealed products. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications .. Tags: 2N6674 |
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First line: 2N3472 2N2228 2N1514* 2N4211 2n3054 Table 2N2015 163-04 1748-0630 1768-0610 2N1015 2N2739 2N3743 2N4002 2N6046 2N2740 2N3771 2N4003 2N6047 2N2741 2N3772 2N4210 2N6048 2N2742 2N3773 2N4211 2N6060 2N2745 2N3846 2N4347 2N6062 2N2746 2N3847 2N4348 2N6125 2N2747 2N3848 2N4865 2N6226 2N2748 2N3849 2N4866 Abstract: .. 29 1756-1840 1776-1240 2N2338 2N2338 2N2815 2N2815 2N3474 2N3474 2N5634 2N5634 2N6674. 30 1756-1860 1776-1260 2N2528 2N2528 2N2816 2N2816 2N3475 2N3475 2N5733 2N5733 . 31 1776-1440 2N2580 2N2580 2N2817 2N2817 2N3476 2N3476 2N5758 2N5758 . 32 1776-1460 2N2580M 2N2580M 2N2818 2N2818 2N3477 2N3477 2N5759 2N5759 .. Tags: 2n3054 2N4211 2N1514* 2N2228 2N3472 2N2015 2N1015 2N2739 2N3743 2N4002 2N6046 2N2740 2N3771 2N4003 2N6047 2N2741 2N3772 2N4210 2N6048 2N2742 2N3773 2N4211 2N6060 2N2745 2N3846 2N4347 2N6062 2N2746 2N3847 2N4348 2N6125 2N2747 2N3848 2N4865 2N6226 2N2748 2N3849 2N4866 2N6227 2N2751 2N3902 |
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First line: switching performance high voltage current Vcev. lc(sat) 100% testing switching parameters, including turn-off time saturation voltage, provide limit values worst-case design Controlied-lifetime production process provide higher gain given base width assure stable current gain during operation eleva Abstract: .. € Other high-voltage switching applications lc sat 5 A 10 A 15 A 450 V 2N6671 2N6671 2N6674 2N6676 2N6676 VCEV 550 V 2 N6672 N6672 2N6677 2N6677 650 V 2N6673 2N6673 2N6675 2N6675 2 N 6678 CHARACTERISTIC TC Â C LIMITS UNITS 'CEVa 25 0.1 0.1 .. Tags: datasheet abstract.. |
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First line: BDW51 buw34 Power Ttanslstors TO-3 Case (Continued) TYPE bvcbo bvceo VCE(SAT) @'C "TYP (MHZ) 2N6674 2N6675 BDW51 BDW52 Abstract: .. VCE SAT @'C *r "TYP A <W V V A V A MHZ NPN PNP MAX MIN MIN MIN MAX MAX MIN 2N6674 15 175 350 300 8.0 20 .. 5.0 15 15 2N6675 2N6675 15 175 450 400 8.0 20 .. 5.0 15 15 BDW51 BDW51 BDW52 BDW52 15 125 45 45 20 150 5.0 .. Tags: buw34 BDW51 datasheet abstract.. |
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First line: buw34 BUW35 BU208A TO-3 Case (Continued) type bvcbo bvceo vce(sat) @'c (mhz) 2N6674 2N6675 BDW51 BDW52 BDW51A BDW52A Abstract: .. @'c *r  typ A <W v v A v A mhz NPN PNP max min min min max max min 2N6674 15 175 350 300 8.0 20 .. 5.0 15 15 2N6675 2N6675 15 175 450 400 8.0 20 .. 5.0 15 15 BDW51 BDW51 BDW52 BDW52 15 125 45 45 20 150 5.0 3.0 10 3 .. Tags: BU208A BUW35 buw34 datasheet abstract.. |
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First line: BUX31B 2N6771 BUW41B BUW41 BUw41b* MAXIVOLT SERIES HIGH VOLTAGE/HIGH CURRENT SWITCHING TRANSISTORS MAXIVOLT-A series power transistors fully designed high voltage switching application. MAXIVOLT SELECTOR CHART 'C(sat) vCEV 260V 2N6686 280V 2N6687 300V 2N6688 2N6771* 2N6671 2N6674 2N6676 Abstract: .. 20A 25A vCEV 260V 260V - - - - - - 2N6686 2N6686 280V 280V - - - - - - 2N6687 2N6687 300V 300V - - - - - 2N6688 2N6688 - 2N6771 2N6771 * 2N6671 2N6671 _ 2N6674 2N6676 2N6676 _ _ 450V 450V BUW40 BUW40 * 2N6738 2N6738 * — — — — — - BUW41 BUW41 * - - - - — 2N6772 2N6772 * 2N6672 2N6672 _ 2N6675 2N6675 2N6677 2N6677 _ — 560V 560V .. Tags: BUw41b* BUW41 BUW41B 2N6771 BUX31B datasheet abstract.. |
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First line: ST-550 TLP 527 fll3b4Sfl DDOOBgM T-53--0/ HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS IMIIlllllOi Type Industry Power Dissipation VCEV VCEO VCE(SAT.) Vbe(SAT.)@Ic CASE Type (volts) (volts) (volts) (Min.) (volts) (volts) (MHz) STYLE (watts) 2N6672 2N6672 TO-3 2N6673 2N6673 TO-3 2N6674 2N6674 TO-3 Abstract: .. 1.5 1.6 5.0 300 15 TO-3 2N6673 2N6673 2N6673 2N6673 150 650 400 650 .10 10 5.0 1.5 1.6 5.0 300 15 TO-3 2N6674 2N6674 175 450 300 450 .10 10 8.0 1.0 1.5 10 500 15 TO-3 2N6675 2N6675 2N6675 2N6675 175 650 400 650 .10 10 8.0 1.0 1.5 10 500 15 .. Tags: TLP 527 ST-550 datasheet abstract.. |
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First line: Power Transistors TO-3 Case (Continued) TYPE Abstract: .. 2N6674 15 175 350 300 8.0 20 - - 5.0 15 15. 2N6675 2N6675 15 175 450 400 8.0 20 - - 5.0 15 15. BDW51 BDW51 BDW52 BDW52 15 125 45 45 20 150 5.0 3.0 10 3.0. BDW51A BDW51A BDW52A BDW52A 15 125 60 60 20 150 5.0 3.0 10 3.0. BDW51B BDW51B BDW52B BDW52B 15 125 80 80 20 150 5 .. Tags: datasheet abstract.. |
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First line: BUW35 Power Transistors TO-3 Case (Continued) TYPE Abstract: .. 2N6674 15 175 350 300 8.0 20 - - 5.0 15 15. 2N6675 2N6675 15 175 450 400 8.0 20 - - 5.0 15 15. BDW51 BDW51 BDW52 BDW52 15 125 45 45 20 150 5.0 3.0 10 3.0. BDW51A BDW51A BDW52A BDW52A 15 125 60 60 20 150 5.0 3.0 10 3.0. BDW51B BDW51B BDW52B BDW52B 15 125 80 80 20 150 5 .. Tags: BUW35 BUX48 BUX11 BDW51 2N6675 datasheet abstract.. |
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First line: 2N6673 PRODUCTS CORPORATIO SEMICODUCTOR SPECIALIST DEVICE CASE EAKDOV OLTAGE Min. Max. VOLTA ax.) 26512 TO-3 26513 TO-3 26514 TO-3 26542 TO-3 26543 TO-3 26544 TO-3 Abstract: .. 7 3 5 10 40 5 1 1.5 2 2N6672 2N6672 TO-3 550 350 7 3 5 10 40 5 1 1.5 2 2N6673 2N6673 TO-3 650 400 7 3 5 10 40 5 1 1.5 2 2N6674 TO-3 450 300 7 2 10 8 20 10 2 1 2 2N6675 2N6675 TO-3 650 400 7 2 10 8 20 10 2 1 2 2N6676 2N6676 TO-3 450 300 8 3 15 8 15 3 1 2 2N6677 2N6677 TO .. Tags: 2N6673 datasheet abstract.. |
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First line: 2N6583 2N6562* DEVICE CASE EAKDOV OLTAGE Min. Max. VOLTA ax.) 2N6512 TO-3 2N6513 TO-3 2N6514 TO-3 2N6542 TO-3 2N6543 TO-3 2N6544 TO-3 2N6546 TO-3 2N6547 TO-3 Abstract: .. 7 3 5 10 40 5 1 1.5 2 2N6672 2N6672 TO-3 550 350 7 3 5 10 40 5 1 1.5 2 2N6673 2N6673 TO-3 650 400 7 3 5 10 40 5 1 1.5 2 2N6674 TO-3 450 300 7 2 10 8 20 10 2 1 2 2N6675 2N6675 TO-3 650 400 7 2 10 8 20 10 2 1 2 2N6676 2N6676 TO-3 450 300 8 3 15 8 15 3 1 2 2N6677 2N6677 TO .. Tags: 2N6562* 2N6583 datasheet abstract.. |
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First line: BUX31B THOMSON/ DISTRIBUTOR SflE =J0ata73 [][][]S73D TCSK Bipolar Power Transistors High-Voltage (Continued) VcE(sat)-V vCEO(sus) VcEV(sus) ft(Typ) JEOEC Typo Package 2N6673 SwitchMax FAMILY (n-p-n) 150W BUX42 15-45 2N6542 12-60 Abstract: .. 1.5 10 1.25 BUX17B BUX17B 300 400 □ 150 7 min. 8 3 3 8 1.5 2N6546 2N6546 300 650 175 12-60 5 2 1.5 10 2 2N6674"* 300 450 175 8-20 10 2 1 10 2 2N6676 2N6676 "* 300 450 175 8 min. 15 3 1 15 3 TIP562 TIP562 300 - 100 20 min. 1 4 2 15 5 20 TO-204AA TO-204AA / BUX13 BUX13 .. Tags: BUX31B datasheet abstract.. |
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First line: MflE 0000MH5 MSMLB, sehelab LTDT^'t BI-POLAR TRANSISTORS (CECC HIGH REL) HIGH ENERGY Type Number Code Package Vceo (conti Vce/Ic 2N6589 T061 7-35 2N6590 T061 7-35 2N6594 15-200 2.5M 2N6609 5min 4/16 2N6653 10min 5/15 Abstract: .. 150 2N6672 2N6672 HR NPN T03 350 8 10-40 3/5 15M 150 2N6673 2N6673 HR NPN T03 400 8 10-40 3/5 15H 150 2N6674 HR NPN T03 300 15 8-200 2/10 15M 175 2N6675 2N6675 HR NPN T03 400 15 8-200 2/10 15M 175 2N6676 2N6676 HR NPN T03 300 15 8min 3/15 .. Tags: datasheet abstract.. |
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First line: switching performance high voltage current Vcev. lc(sat) 100% testing switching parameters, including turn-off time saturation voltage, provide limit values worst-case design Controlied-lifetime production process provide higher gain given base width assure stable current gain during operation eleva Abstract: .. € Other high-voltage switching applications lc sat 5 A 10 A 15 A 450 V 2N6671 2N6671 2N6674 2N6676 2N6676 VCEV 550 V 2 N6672 N6672 2N6677 2N6677 650 V 2N6673 2N6673 2N6675 2N6675 2 N 6678 CHARACTERISTIC TC Â C LIMITS UNITS 'CEVa 25 0.1 0.1 .. Tags: datasheet abstract.. |
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First line: 2N6575 Type* Compi meni (Volto) (Min-Max VCE(SAT) ale/vet A/V) llGEV TC-2S" (Watts) ll/b @VCE 1*ec (A@V) (Mz) S@A/A) IOFF s@A/A) 2N5804 2N5805 40853 375(VCER) 10-10005/4 10-10005/4 >10@5/4 2@5/4 @300 10450 2.2@50 @5/.5 @5/.5 @5/,5 2N6249 2N6250 2N6251 40854 2N6542 2N6543 2N6544 2NS545 2N6546 Abstract: .. 4 2.9 05/1 2,9 В 5/1 1.9 В 5/1 2N6653 2N6653 2N6654 2N6654 2N6655 2N6655 2N6674 2N6675 2N6675 2N6676 2N6676 2N6677 2N6677 2N6678 2N6678 MJ13330 MJ13330 MJ13331 MJ13331 300 350 400 300 400 300 350 400 200 250 20 20 20 15 15 15 15 15 20 20 >10В 15/5 >10В 15/5 >10В 15 .. Tags: 2N6575 datasheet abstract.. |
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First line: 2N6580 2N6575 ENGLAND SEMICONDUCTOR bSb4n3 OQQQQSb TO-3 Case Case VCE0 (SAT) (SAT) ls/b Comple- (SUS) (MAX) IC/VCE IC/lB IC/VCE ICEV IC/lB tOFF IC/lB Type ment (min-max A/V) A/A) @A/V) @A/A) (Watts) (MHz) A/A) (pis A/A) 2N5933d 2@20/1 5@110 6@23 20/1 9@20/1 2N5934d 2@20/1 5@150 7.6@23 6@20/1 9@30/1 Abstract: .. 2.9@5/1 2N6673 2N6673 400 8 10-40В 5/3 2@8/4 1 6В 5/1 1@650 150 6В 25 15 6В 5/1 2 9@5/1 2N6674 300 15 8-20@10/2 5В 15/5 1 5В 10/2 1В 450 175 5 9@30 15 7В 10/2 3В 10/2 2N6675 2N6675 400 15 8-20@10/2 5В 15/5 1.5В .. Tags: 2N6575 2N6580 datasheet abstract.. |
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First line: ptc 205 ptc b TRANSISTOR 431p ptc 500 PTC886* MICROSEMI CORP/POWER bllSTSG 00003b2 Darlington Transistors TQ-204MA (TO-3) tw^- Part Number Amps VCEO(SUS) (8AT) Volts (Typical) Switch Time Watts Circuit Diagram Technical Publication 10002 10003 30-300 10002/03 10006 10007 30-300 10006/07 6251 6252 62 Abstract: .. 10 800 2.0 7.5 2.0 4.0 2.0 175 — * 2 N6674 N6674 10 300 1.0 8-20 0.6 2.5 0.5 175 — 2N6674/75 2N6675 2N6675 10 400 1,0 8-20 0.6 2.5 0.5 175 — 2N6674/75 2N6676 2N6676 15 300 1.5 8-20 0.6 2.5 0.5 175 — 2N6676 2N6676 /78 2N6677 2N6677 15 .. Tags: PTC886* ptc 500 TRANSISTOR 431p ptc b ptc 205 datasheet abstract.. |
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First line: BDW52 PMD17K100 BU208A 2n6545 pmd10K80 Power Transistors TO-3 Case TYPE 87.5 87.5 87.5 87.5 87.5 87.5 Abstract: .. 2N6674 15 175 350 300 8.0 20 - - 5.0 15 15. 2N6675 2N6675 15 175 450 400 8.0 20 - - 5.0 15 15. BDW51 BDW51 BDW52 BDW52 15 125 45 45 20 150 5.0 3.0 10 3.0. BDW51A BDW51A BDW52A BDW52A 15 125 60 60 20 150 5.0 3.0 10 3.0. BDW51B BDW51B BDW52B BDW52B 15 125 80 80 20 150 5 .. Tags: pmd10K80 2n6545 BU208A BDW52 PNP 2N3791 pmd17k60* PMD17K100* PMD16K60 PMD16K100 PMD1603K PMD13K80 PMD13K60* PMD12K40* PMD11K80 PMD10K100 datasheet abstract.. |
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First line: 1N1742A 1N649-1 microsemi 1n6642 1n4938 1N1614 Diodes transistor 2N4033 QML-9500-19 2/2004 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 2N2432 2N2481 2N3902 2N3996 2N6193 2N9193U3 M19500/483-02 Abstract: .. 2N6674 - 2N6675 2N6675 537 X X X X. 2N6676 2N6676 , 2N6678 2N6678 538 X X X X. 2N6689 2N6689 - 2N6690 2N6690 537 X X X X. 2N6691 2N6691 , 2N6693 2N6693 538 X X X X. 2N6764 2N6764 , 2N6766 2N6766 , 2N6768 2N6768 , 2N6770 2N6770 543 X X X X. 2N682 2N682 , 2N683 2N683 , 2N685 2N685 - 2N692 2N692 108 X X X. 2N696 2N696 - 2N697 2N697 & S 99 X X. 2N6987 2N6987 .. Tags: transistor 2N4033 1N1614 Diodes 1N649-1 1N1742A PPS 10-3900 System Power-One PLS36r MICROSEMI 2N2920 MICROSEMI 2N2222A microsemi 1n6642 1n4938 M19500/483 J 2N918 J 2N706 J 2N5581 2N6990 2N6989 2N2432 2N2481 2N3902 2N3996 2N6193 2N9193U3 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 |
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First line: INCH-POUND documentation process conversion measures necessary comply with this document shall completed November 2008. MIL-PRF-19500/710A August 2008 SUPERSEDING MIL-PRF-19500/710 2003 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6674T1, 2N6674T3, 2 Abstract: .. 2N6674, T1, T3, 300 V dc Max 2N6675 2N6675 , T1, T3, 400 V dc Max. MIL-PRF-19500 MIL-PRF-19500 /710A 710A . 19. 5. PACKAGING. 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract .. Tags: 2N6674T1 2N6674T3 2N6675T1 2N6675T3 |
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First line: 2N5675 2N2611 2N2611* GENERAL fiSESSOfi 00020^4 3918590 GENERAL SEMICONDUCTOR 02094 _T-ZS-V AMPS 33-/J? leso/ DATA Mcev BVil0 DFE@ VcEiut: >@lc ICEV avc. SHEET VOLTS VOLTS tuns Min. Max. AMPS VOLTS VOLTS AMPS AMPS HAMP VOLTS Abstract: .. TO-3 2N8560 2N8560 450 TO-3 300 2N8561 2N8561 T0-61 T0-61 /1so 450 2N8562 2N8562 TQ~1!lso 300 2N8563 2N8563 TO-3 2N6674 300 400 TO-3 2N5675 2N5675 2N6689 2N6689 T0-61 T0-61 /1so 300 TO-61 TO-61 /1so' 400 2N6690 2N6690 OSOB10008 OSOB10008 TO-5 80 050U7530 050U7530 TO-3 300 050U7535 050U7535 .. Tags: 2N2611* 2N2611 2N5675 datasheet abstract.. |
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First line: 58354 ADVANCED SEMICONDUCTOR ADVANCED SEMICONDUCTOR 0250354 00046 SILICON TRANSISTORS MAXIMUM RATINGS ELECTRICAL ARACTERISTICS DEVICE TYPE POLARITY WATTS AMPS BVcbo BVCE BVebo IIfe MIN. AMPS *KHZ CASE 2N4900 2N4901 2N4902 2N4903 PNP* 25.0 87.0 87.0 87.0 1.00 5.00 5.00 5.00 .500 1.00 1.00 1.00 T066 T Abstract: .. 1000 1000 10 3.00 5.00 5.00 5.00 3 3 3 3 20 20 20 15 T0220 T0220 T0220 T0220 T0220 T0220 T03 2N6672 2N6672 2N6673 2N6673 '2N6674 2N6675 2N6675 NPN NPN NPN NPN 150 150 175 175 8.00 8.00 15.0 15.0 550 650 450 650 350 400 300 400 8 8 7 7 10 10 8 8 5.00 5.00 .. Tags: 2N6258 2N5129 datasheet abstract.. |
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First line: 0258354 ADVANCED SEMICONDUCTOR ADVANCED SEMICONDUCTOR SILI 00046 TISANSfiSTORS MAXIMUM RATINGS ELECTRICAL ARACTERISTICS DEVICE TYPE POLARITY WATTS AMPS BVcso BVCE BVEBO MIN. AMPS *KHZ CASE 2N4900 2N4901 2N4902 2N4903 PNP* 25.0 87.0 87.0 87.0 1.00 5.00 5.00 5.00 .500 1.00 1.00 1.00 T066 T066 T066 T06 Abstract: .. 1000 1000 10 3.00 5.00 5.00 5.00 3 3 3 3 20 20 20 15 T0220 T0220 T0220 T0220 T0220 T0220 T03 2N6672 2N6672 2N6673 2N6673 '2N6674 2N6675 2N6675 NPN NPN NPN NPN 150 150 175 175 8.00 8.00 15.0 15.0 550 650 450 650 350 400 300 400 8 8 7 7 10 10 8 8 5.00 5.00 .. Tags: 2N5133 2N4922 npn 2N5136* 2N5042* datasheet abstract.. |
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First line: 2N769* 2sa1091 2N7126 2N7058 VNP006A Type: VNL005A Notes: Breakdown Voltage: Continuous Current: RDS(on) Ohm: Trans Conductance Mhos: Trans Conductance Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching Case Style: TO-204AA/TO-3 Polarity Abstract: .. STI Type: 2N6674 Notes: Polarity: NPN Power Dissipation: 175 VCEV: 450 VCEO: 300 ICEV: 450 ICEV A: .10 hFE: 10 hFE A: 8.0 VCE: 1.0 VBE: 1.5 IC: 10 COB: 500 fT: 15 Case Style: TO-204AA TO-204AA /TO-3: Industry .. Tags: VNP006A 2N7058 2N7126 2sa1091 2N769* 2N6609M |
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First line: strs6309 S2000A3 2N3055 TO-220 STR5412 STRS6307 2N3054 2N3055 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3197 2N3198 2N3226 2N3232 2N3233 2N3234 2N3235 2N3236 2N3237 2N3238 2N3239 2N3240 2N3441 2N3442 2N3445 2N5301 2N5302 2N5303 2N5495 2N5496 2N5497 2N5498 2N5559 TO-66 T Abstract: .. 2N6262 2N6262 TO-3 2N6357 2N6357 TO-3 2N6489 2N6489 TO-220 TO-220 2N6674 TO-3. 2N6263 2N6263 TO-66 TO-66 2N6358 2N6358 TO-3 2N6490 2N6490 TO-220 TO-220 2N6675 2N6675 TO-3. 2N6264 2N6264 TO-66 TO-66 2N6359 2N6359 TO-3 2N6491 2N6491 TO-220 TO-220 2N676 2N676 TO-3. 2N6270 2N6270 TO-3 2N6360 2N6360 TO-3 2N6492 2N6492 TO-3 2N6677 2N6677 .. Tags: STRS6307 STR5412 2N3055 TO-220 S2000A3 strs6309 to-66 TO-3PN TO-220 TIP55 tip41c tip42c TIP36B tip35c equivalent tip35 TIP34 tip160 TIP150 2N3054 2N3055 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3197 2N3198 2N3226 2N3232 2N3233 2N3234 2N3235 2N3236 2N3237 2N3238 2N3239 2N3240 2N3441 2N3442 2N3445 2N5301 2N5302 2N5303 2N5495 2N5496 2N5497 2N5498 2N5559 2N32741 |
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First line: BB139 BT13G BT808 1N5004 BT1690 AMER PHILIPS/DISCRETE bbS3131 aOlbSbH T-Ol-oX INDUSTRY PART NUMBER NEAREST EQUIV. EQUIV. PKG. INDUSTRY PART NUMBER NEAREST EQUIV. EQUIV. PKG. 0105-50 BLU52 1N321 BYW56 0204-50 BLU52 1N321A BYW56 0510-25 BLV97 1N322 BYW56 12F5 BYX99-300 1N322A BYW56 Abstract: .. 43 2N6672 2N6672 BUS22A BUS22A 43 2N6342 2N6342 BT138-500 BT138-500 32 2N6673 2N6673 BUS22B BUS22B 43 2N6342A 2N6342A BT138-500 BT138-500 32 2N6674 BUS23A BUS23A 43 2N6343 2N6343 BT138-500 BT138-500 32 2N6675 2N6675 BUS23B BUS23B 43 2N6343A 2N6343A BT138-500 BT138-500 32 2N6676 2N6676 BUS23A BUS23A 43 2N6344 2N6344 BT138-600 BT138-600 32 2N6677 2N6677 .. Tags: BT1690 1N5004 BT808 BT13G BB139 datasheet abstract.. |
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